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FDMS2572 FDMS2572 onsemi fdms2572-d.pdf Description: MOSFET N-CH 150V 4.5A/27A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+77.08 грн
6000+ 71.43 грн
Мінімальне замовлення: 3000
FPF2116 FPF2116 onsemi fpf2116-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+61.17 грн
Мінімальне замовлення: 3000
FPF2100 FPF2100 onsemi ONSM-S-A0003590100-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
3000+58.58 грн
Мінімальне замовлення: 3000
FPF2123 FPF2123 onsemi ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
FPF1005 FPF1005 onsemi fpf1006-d.pdf Description: IC PWR SWITCH P-CH 1:1 6MICROFET
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+31.99 грн
6000+ 29.26 грн
15000+ 28.16 грн
Мінімальне замовлення: 3000
FDMS2572 FDMS2572 onsemi fdms2572-d.pdf Description: MOSFET N-CH 150V 4.5A/27A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2+171.13 грн
10+ 136.77 грн
100+ 108.82 грн
500+ 86.41 грн
1000+ 73.32 грн
Мінімальне замовлення: 2
FPF2116 FPF2116 onsemi fpf2116-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 3493 шт:
термін постачання 21-31 дні (днів)
3+131.93 грн
10+ 114.12 грн
25+ 107.67 грн
100+ 86.08 грн
250+ 80.83 грн
500+ 70.72 грн
1000+ 57.64 грн
Мінімальне замовлення: 3
FPF2100 FPF2100 onsemi ONSM-S-A0003590100-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
3+126.65 грн
10+ 109.26 грн
25+ 103.09 грн
100+ 82.43 грн
250+ 77.4 грн
500+ 67.72 грн
1000+ 55.19 грн
Мінімальне замовлення: 3
FPF2123 FPF2123 onsemi ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 6408 шт:
термін постачання 21-31 дні (днів)
FPF1005 FPF1005 onsemi fpf1006-d.pdf Description: IC PWR SWITCH P-CH 1:1 6MICROFET
на замовлення 19123 шт:
термін постачання 21-31 дні (днів)
4+75.39 грн
10+ 64.9 грн
25+ 61.59 грн
100+ 47.49 грн
250+ 44.39 грн
500+ 39.23 грн
1000+ 30.46 грн
Мінімальне замовлення: 4
ADP3110AKRZ-RL ADP3110AKRZ-RL onsemi adp3110a-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
2500+13.9 грн
5000+ 12.46 грн
12500+ 11.81 грн
25000+ 10.83 грн
Мінімальне замовлення: 2500
ADT7462ACPZ-REEL ADT7462ACPZ-REEL onsemi adt7462-d.pdf Description: IC TEMP/VOLT MONITOR 32-LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad, CSP
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±4°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: -40°C ~ 125°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 32-LFCSP-VQ (5x5)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+348.94 грн
Мінімальне замовлення: 5000
FQA11N90C FQA11N90C onsemi FQA11N90C.pdf Description: MOSFET N-CH 900V 11A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
товар відсутній
KSK596PAWD KSK596PAWD onsemi KSK596.pdf Description: JFET N-CH 20V 1MA TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: TO-92S
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
товар відсутній
KSK596PBWD KSK596PBWD onsemi KSK596.pdf Description: JFET N-CH 20V 1MA TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: TO-92S
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
товар відсутній
KSK596PCWD KSK596PCWD onsemi KSK596.pdf Description: JFET N-CH 20V 1MA TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: TO-92S
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
товар відсутній
KSA1298PYWD KSA1298PYWD onsemi ksa1298-d.pdf Description: TRANS PNP 25V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
товар відсутній
MMBT3904K MMBT3904K onsemi MMBT3904K.pdf Description: TRANS NPN 40V 0.2A SOT23
товар відсутній
MMBT2222AK MMBT2222AK onsemi MMBT2222AK.pdf Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
KSC945COTA KSC945COTA onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945CLTA KSC945CLTA onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
SS9014BBU SS9014BBU onsemi SS9014.pdf Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
SS9014DTA SS9014DTA onsemi SS9014.pdf Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
SS9014ABU SS9014ABU onsemi ss9014-d.pdf Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
KSC945LBU KSC945LBU onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945OBU KSC945OBU onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
SS9014BTA SS9014BTA onsemi SS9014.pdf Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
KSC945YBU KSC945YBU onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 4987 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
16+ 18.29 грн
100+ 8.9 грн
500+ 6.97 грн
1000+ 4.84 грн
2000+ 4.2 грн
Мінімальне замовлення: 12
SS9014CTA SS9014CTA onsemi SS9014.pdf Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
KSP10BU KSP10BU onsemi ksp10-d.pdf Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92-3
Part Status: Active
на замовлення 69536 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
14+ 21.42 грн
100+ 11.38 грн
1000+ 4.78 грн
5000+ 3.75 грн
10000+ 3.19 грн
Мінімальне замовлення: 12
KSP10TA KSP10TA onsemi ksp10-d.pdf Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92-3
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+4.77 грн
6000+ 3.99 грн
Мінімальне замовлення: 2000
KSC945CYTA KSC945CYTA onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
2000+2.97 грн
6000+ 2.65 грн
10000+ 2.28 грн
Мінімальне замовлення: 2000
KSC945OTA KSC945OTA onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945GTA KSC945GTA onsemi KSC945.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945YTA KSC945YTA onsemi ksc945-d.pdf Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 62000 шт:
термін постачання 21-31 дні (днів)
2000+4.52 грн
6000+ 4.04 грн
10000+ 3.35 грн
50000+ 2.77 грн
Мінімальне замовлення: 2000
FJN3314RBU FJN3314RBU onsemi FJN3314R.pdf Description: TRANS PREBIAS NPN 300MW TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
FJN3303RBU FJN3303RBU onsemi FJN3303R.pdf Description: TRANS PREBIAS NPN 300MW TO92-3
товар відсутній
FJN3303RTA FJN3303RTA onsemi fjn3303r-d.pdf Description: TRANS PREBIAS NPN 300MW TO92-3
товар відсутній
SS8050CBU SS8050CBU onsemi ss8050-d.pdf Description: TRANS NPN 25V 1.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 51305 шт:
термін постачання 21-31 дні (днів)
11+28.65 грн
14+ 21.78 грн
100+ 13.07 грн
500+ 11.36 грн
1000+ 7.72 грн
2000+ 7.11 грн
5000+ 6.7 грн
10000+ 6.03 грн
50000+ 5.59 грн
Мінімальне замовлення: 11
FJN3305RBU FJN3305RBU onsemi FJN3305R.pdf Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
FJN3314RTA FJN3314RTA onsemi fjn3314r-d.pdf Description: TRANS PREBIAS NPN 300MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
SS8550DTA SS8550DTA onsemi ss8550-d.pdf Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
2000+3.96 грн
6000+ 3.65 грн
10000+ 3.47 грн
Мінімальне замовлення: 2000
FJN4306RTA FJN4306RTA onsemi Description: TRANS PREBIAS PNP 300MW TO92-3
товар відсутній
SS8550CTA SS8550CTA onsemi ss8550-d.pdf Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
2000+3.96 грн
6000+ 3.65 грн
10000+ 3.47 грн
Мінімальне замовлення: 2000
SS8550DBU SS8550DBU onsemi ss8550-d.pdf Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 13260 шт:
термін постачання 21-31 дні (днів)
14+21.86 грн
20+ 14.52 грн
100+ 7.32 грн
500+ 5.61 грн
1000+ 4.16 грн
2000+ 3.5 грн
5000+ 3.29 грн
10000+ 3.13 грн
Мінімальне замовлення: 14
FJN4306RBU FJN4306RBU onsemi Description: TRANS PREBIAS PNP 300MW TO92-3
товар відсутній
SS8550CBU SS8550CBU onsemi ss8550-d.pdf Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 58269 шт:
термін постачання 21-31 дні (днів)
14+21.86 грн
20+ 14.88 грн
100+ 7.53 грн
500+ 5.76 грн
1000+ 4.27 грн
2000+ 3.6 грн
5000+ 3.38 грн
10000+ 3.22 грн
Мінімальне замовлення: 14
FJN4305RBU FJN4305RBU onsemi FJN4305R.pdf Description: TRANS PREBIAS PNP 300MW TO92-3
товар відсутній
KSC1008COTA KSC1008COTA onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008CYBU KSC1008CYBU onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
SS9012HTA SS9012HTA onsemi SS9012.pdf Description: TRANS PNP 20V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
KSC1008COBU KSC1008COBU onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008GTA KSC1008GTA onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008YTF KSC1008YTF onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008YTA KSC1008YTA onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+5.52 грн
Мінімальне замовлення: 2000
KSC1008OBU KSC1008OBU onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008RBU KSC1008RBU onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008RTA KSC1008RTA onsemi ksc1008-d.pdf Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
MMBTH11 MMBTH11 onsemi MPSH11%2CMMBTH11.pdf Description: RF TRANS NPN 25V 650MHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3
товар відсутній
SS9015BBU SS9015BBU onsemi SS9015.pdf Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
FDMS2572 fdms2572-d.pdf
FDMS2572
Виробник: onsemi
Description: MOSFET N-CH 150V 4.5A/27A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+77.08 грн
6000+ 71.43 грн
Мінімальне замовлення: 3000
FPF2116 fpf2116-d.pdf
FPF2116
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+61.17 грн
Мінімальне замовлення: 3000
FPF2100 ONSM-S-A0003590100-1.pdf?t.download=true&u=5oefqw
FPF2100
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+58.58 грн
Мінімальне замовлення: 3000
FPF2123 ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw
FPF2123
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
FPF1005 fpf1006-d.pdf
FPF1005
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+31.99 грн
6000+ 29.26 грн
15000+ 28.16 грн
Мінімальне замовлення: 3000
FDMS2572 fdms2572-d.pdf
FDMS2572
Виробник: onsemi
Description: MOSFET N-CH 150V 4.5A/27A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+171.13 грн
10+ 136.77 грн
100+ 108.82 грн
500+ 86.41 грн
1000+ 73.32 грн
Мінімальне замовлення: 2
FPF2116 fpf2116-d.pdf
FPF2116
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 3493 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+131.93 грн
10+ 114.12 грн
25+ 107.67 грн
100+ 86.08 грн
250+ 80.83 грн
500+ 70.72 грн
1000+ 57.64 грн
Мінімальне замовлення: 3
FPF2100 ONSM-S-A0003590100-1.pdf?t.download=true&u=5oefqw
FPF2100
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+126.65 грн
10+ 109.26 грн
25+ 103.09 грн
100+ 82.43 грн
250+ 77.4 грн
500+ 67.72 грн
1000+ 55.19 грн
Мінімальне замовлення: 3
FPF2123 ONSM-S-A0003590112-1.pdf?t.download=true&u=5oefqw
FPF2123
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 6408 шт:
термін постачання 21-31 дні (днів)
FPF1005 fpf1006-d.pdf
FPF1005
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
на замовлення 19123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+75.39 грн
10+ 64.9 грн
25+ 61.59 грн
100+ 47.49 грн
250+ 44.39 грн
500+ 39.23 грн
1000+ 30.46 грн
Мінімальне замовлення: 4
ADP3110AKRZ-RL adp3110a-d.pdf
ADP3110AKRZ-RL
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+13.9 грн
5000+ 12.46 грн
12500+ 11.81 грн
25000+ 10.83 грн
Мінімальне замовлення: 2500
ADT7462ACPZ-REEL adt7462-d.pdf
ADT7462ACPZ-REEL
Виробник: onsemi
Description: IC TEMP/VOLT MONITOR 32-LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad, CSP
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±4°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: -40°C ~ 125°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 32-LFCSP-VQ (5x5)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+348.94 грн
Мінімальне замовлення: 5000
FQA11N90C FQA11N90C.pdf
FQA11N90C
Виробник: onsemi
Description: MOSFET N-CH 900V 11A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
товар відсутній
KSK596PAWD KSK596.pdf
KSK596PAWD
Виробник: onsemi
Description: JFET N-CH 20V 1MA TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: TO-92S
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
товар відсутній
KSK596PBWD KSK596.pdf
KSK596PBWD
Виробник: onsemi
Description: JFET N-CH 20V 1MA TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: TO-92S
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
товар відсутній
KSK596PCWD KSK596.pdf
KSK596PCWD
Виробник: onsemi
Description: JFET N-CH 20V 1MA TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Voltage - Breakdown (V(BR)GSS): 20 V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: TO-92S
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
товар відсутній
KSA1298PYWD ksa1298-d.pdf
KSA1298PYWD
Виробник: onsemi
Description: TRANS PNP 25V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 200 mW
товар відсутній
MMBT3904K MMBT3904K.pdf
MMBT3904K
Виробник: onsemi
Description: TRANS NPN 40V 0.2A SOT23
товар відсутній
MMBT2222AK MMBT2222AK.pdf
MMBT2222AK
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
KSC945COTA ksc945-d.pdf
KSC945COTA
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945CLTA ksc945-d.pdf
KSC945CLTA
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
SS9014BBU SS9014.pdf
SS9014BBU
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
SS9014DTA SS9014.pdf
SS9014DTA
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
SS9014ABU ss9014-d.pdf
SS9014ABU
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
KSC945LBU ksc945-d.pdf
KSC945LBU
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945OBU ksc945-d.pdf
KSC945OBU
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
SS9014BTA SS9014.pdf
SS9014BTA
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
KSC945YBU ksc945-d.pdf
KSC945YBU
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 4987 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
16+ 18.29 грн
100+ 8.9 грн
500+ 6.97 грн
1000+ 4.84 грн
2000+ 4.2 грн
Мінімальне замовлення: 12
SS9014CTA SS9014.pdf
SS9014CTA
Виробник: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Frequency - Transition: 270MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
KSP10BU ksp10-d.pdf
KSP10BU
Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92-3
Part Status: Active
на замовлення 69536 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
14+ 21.42 грн
100+ 11.38 грн
1000+ 4.78 грн
5000+ 3.75 грн
10000+ 3.19 грн
Мінімальне замовлення: 12
KSP10TA ksp10-d.pdf
KSP10TA
Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: TO-92-3
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+4.77 грн
6000+ 3.99 грн
Мінімальне замовлення: 2000
KSC945CYTA ksc945-d.pdf
KSC945CYTA
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+2.97 грн
6000+ 2.65 грн
10000+ 2.28 грн
Мінімальне замовлення: 2000
KSC945OTA ksc945-d.pdf
KSC945OTA
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945GTA KSC945.pdf
KSC945GTA
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
KSC945YTA ksc945-d.pdf
KSC945YTA
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
на замовлення 62000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+4.52 грн
6000+ 4.04 грн
10000+ 3.35 грн
50000+ 2.77 грн
Мінімальне замовлення: 2000
FJN3314RBU FJN3314R.pdf
FJN3314RBU
Виробник: onsemi
Description: TRANS PREBIAS NPN 300MW TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
FJN3303RBU FJN3303R.pdf
FJN3303RBU
Виробник: onsemi
Description: TRANS PREBIAS NPN 300MW TO92-3
товар відсутній
FJN3303RTA fjn3303r-d.pdf
FJN3303RTA
Виробник: onsemi
Description: TRANS PREBIAS NPN 300MW TO92-3
товар відсутній
SS8050CBU ss8050-d.pdf
SS8050CBU
Виробник: onsemi
Description: TRANS NPN 25V 1.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 51305 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.65 грн
14+ 21.78 грн
100+ 13.07 грн
500+ 11.36 грн
1000+ 7.72 грн
2000+ 7.11 грн
5000+ 6.7 грн
10000+ 6.03 грн
50000+ 5.59 грн
Мінімальне замовлення: 11
FJN3305RBU FJN3305R.pdf
FJN3305RBU
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
FJN3314RTA fjn3314r-d.pdf
FJN3314RTA
Виробник: onsemi
Description: TRANS PREBIAS NPN 300MW TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
SS8550DTA ss8550-d.pdf
SS8550DTA
Виробник: onsemi
Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+3.96 грн
6000+ 3.65 грн
10000+ 3.47 грн
Мінімальне замовлення: 2000
FJN4306RTA
FJN4306RTA
Виробник: onsemi
Description: TRANS PREBIAS PNP 300MW TO92-3
товар відсутній
SS8550CTA ss8550-d.pdf
SS8550CTA
Виробник: onsemi
Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+3.96 грн
6000+ 3.65 грн
10000+ 3.47 грн
Мінімальне замовлення: 2000
SS8550DBU ss8550-d.pdf
SS8550DBU
Виробник: onsemi
Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 13260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.86 грн
20+ 14.52 грн
100+ 7.32 грн
500+ 5.61 грн
1000+ 4.16 грн
2000+ 3.5 грн
5000+ 3.29 грн
10000+ 3.13 грн
Мінімальне замовлення: 14
FJN4306RBU
FJN4306RBU
Виробник: onsemi
Description: TRANS PREBIAS PNP 300MW TO92-3
товар відсутній
SS8550CBU ss8550-d.pdf
SS8550CBU
Виробник: onsemi
Description: TRANS PNP 25V 1.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 58269 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.86 грн
20+ 14.88 грн
100+ 7.53 грн
500+ 5.76 грн
1000+ 4.27 грн
2000+ 3.6 грн
5000+ 3.38 грн
10000+ 3.22 грн
Мінімальне замовлення: 14
FJN4305RBU FJN4305R.pdf
FJN4305RBU
Виробник: onsemi
Description: TRANS PREBIAS PNP 300MW TO92-3
товар відсутній
KSC1008COTA ksc1008-d.pdf
KSC1008COTA
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008CYBU ksc1008-d.pdf
KSC1008CYBU
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
SS9012HTA SS9012.pdf
SS9012HTA
Виробник: onsemi
Description: TRANS PNP 20V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
KSC1008COBU ksc1008-d.pdf
KSC1008COBU
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008GTA ksc1008-d.pdf
KSC1008GTA
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008YTF ksc1008-d.pdf
KSC1008YTF
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008YTA ksc1008-d.pdf
KSC1008YTA
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+5.52 грн
Мінімальне замовлення: 2000
KSC1008OBU ksc1008-d.pdf
KSC1008OBU
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008RBU ksc1008-d.pdf
KSC1008RBU
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
KSC1008RTA ksc1008-d.pdf
KSC1008RTA
Виробник: onsemi
Description: TRANS NPN 60V 0.7A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товар відсутній
MMBTH11 MPSH11%2CMMBTH11.pdf
MMBTH11
Виробник: onsemi
Description: RF TRANS NPN 25V 650MHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 225mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: SOT-23-3
товар відсутній
SS9015BBU SS9015.pdf
SS9015BBU
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 190MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 450 mW
товар відсутній
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