| Фото | Назва | Виробник | Інформація |
Доступність |
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NB4N121KMNGEVB | onsemi |
 Description: BOARD EVAL NB4N121 FANOUT BUFFERPackaging: Box Function: Clock Distribution Type: Timing Utilized IC / Part: NB4N121K Supplied Contents: Board(s) |
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SS9012GBU | onsemi |
Description: TRANS PNP 20V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 112 @ 50mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
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| NVLJWS070N06CLTAG | onsemi |
Description: T6 60V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.4W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2V @ 6µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Qualification: AEC-Q101 |
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| SBS806M-TL-E | onsemi |
Description: DIODE Packaging: Bulk |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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NCP1010AP100 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 67% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V Supplier Device Package: 7-PDIP Fault Protection: Over Load, Over Temperature, Over Voltage Power (Watts): 19 W |
на замовлення 2964 шт: термін постачання 21-31 дні (днів) |
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HGTG30N60C3D | onsemi |
Description: IGBT 600V 63A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247-3 Switching Energy: 1.05mJ (on), 2.5mJ (off) Gate Charge: 162 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 252 A Power - Max: 208 W |
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LA4450L-E | onsemi |
Description: IC AMP CLASS AB STEREO 20W 14SIP Packaging: Tube Features: Short-Circuit and Thermal Protection, Standby Package / Case: 14-SIP Output Type: 2-Channel (Stereo) Mounting Type: Through Hole Type: Class AB Operating Temperature: -35°C ~ 80°C (TA) Voltage - Supply: 10V ~ 30V Max Output Power x Channels @ Load: 20W x 1 @ 4Ohm Supplier Device Package: 14-SIP |
на замовлення 30375 шт: термін постачання 21-31 дні (днів) |
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FDS8882 | onsemi |
Description: MOSFET N-CH 30V 9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V |
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FDS8882 | onsemi |
Description: MOSFET N-CH 30V 9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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MOC3033VM | onsemi |
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 400µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: Yes Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Voltage - Off State: 250 V Current - DC Forward (If) (Max): 60 mA |
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MOC3023 | onsemi |
Description: ISOL 5.3KVRMS 1CH TRIAC OUT 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Voltage - Isolation: 5300Vrms Current - Hold (Ih): 100µA Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 5mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 50 mA |
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1N5351B | onsemi |
Description: DIODE ZENER 14V 5W AXIAL Packaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V |
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SMF12CT1 | onsemi |
Description: TVS ARRAY 5LINE 100W 12V SC88 Packaging: Tape & Reel (TR) |
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IRF644B-FP001 | onsemi |
Description: MOSFET N-CH 250V 14A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
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FDD5680 | onsemi |
Description: MOSFET N-CH 60V 8.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V |
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FDD5680 | onsemi |
Description: MOSFET N-CH 60V 8.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Power Dissipation (Max): 2.8W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
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| KAI-16050-FXA-JD-B2 | onsemi |
Description: IMAGE SENSOR CCD 16MP 71CPGA Packaging: Bulk Package / Case: 71-BCPGA Type: CCD Operating Temperature: -50°C ~ 70°C Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 5.5µm x 5.5µm Active Pixel Array: 4896H x 3264V Supplier Device Package: 72-CPGA (47.24x45.34) Frames per Second: 2.0 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MBR2045CT | onsemi |
Description: DIODE ARR SCHOTT 45V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
на замовлення 91684 шт: термін постачання 21-31 дні (днів) |
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MBR2045CT | onsemi |
Description: DIODE ARR SCHOTT 45V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V |
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SZBZX84C68LT1G | onsemi |
Description: DIODE ZENER 68V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C68LT1G | onsemi |
Description: DIODE ZENER 68V 225MW SOT23-3 Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 75000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C62ET1G | onsemi |
Description: DIODE ZENER 62V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 215 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C62ET1G | onsemi |
Description: DIODE ZENER 62V 225MW SOT23-3 Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 215 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C68ET1G | onsemi |
Description: DIODE ZENER 68V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C68ET1G | onsemi |
Description: DIODE ZENER 68V 225MW SOT23-3 Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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KA3842B | onsemi |
Description: IC OFFLINE SWITCH 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C (TA) Duty Cycle: 97% Frequency - Switching: Up to 500kHz Internal Switch(s): No Voltage - Supply (Vcc/Vdd): 12V ~ 25V Supplier Device Package: 8-DIP Voltage - Start Up: 16 V Control Features: Frequency Control |
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FGA5065ADF | onsemi |
Description: IGBT TRENCH/FS 650V 100A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20.8ns/62.4ns Switching Energy: 1.35mJ (on), 309µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 72.2 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 268 W |
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FQPF19N20T | onsemi |
Description: MOSFET N-CH 100V 11.8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
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FAN7530N | onsemi |
Description: IC PFC CTRLR CRM/TRANSITION 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 12V ~ 22V Mode: Critical Conduction (CRM), Discontinuous (Transition) Supplier Device Package: 8-DIP Current - Startup: 40 µA |
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1SMC40AT3 | onsemi |
Description: TVS 1500W 40V UNIDIRECT SMC Packaging: Tape & Reel (TR) |
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,TO-226_straightlead.jpg "BC557B") |
BC557B | onsemi |
Description: BJT TO92 45V 100MA PNP 0.5W 150C Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
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BC557C | onsemi |
Description: TRANS PNP 45V 0.1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
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BD13616STU | onsemi |
Description: TRANS PNP 45V 1.5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
на замовлення 331 шт: термін постачання 21-31 дні (днів) |
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NV25640DTVLT3G | onsemi |
Description: 64KB SPI SER CMOS EEPROM FOR VCC Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 20 ns Memory Organization: 8K x 8 Qualification: AEC-Q100 |
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NV25640DTVLT3G | onsemi |
Description: 64KB SPI SER CMOS EEPROM FOR VCC Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Grade: Automotive Write Cycle Time - Word, Page: 4ms Memory Interface: SPI Access Time: 20 ns Memory Organization: 8K x 8 Qualification: AEC-Q100 |
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1N4004 | onsemi |
Description: DIODE DO41 400V 1A 175C Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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1N4004 | onsemi |
Description: DIODE DO41 400V 1A 175C Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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1N5359B | onsemi |
Description: DIODE ZENER 24V 5W AXIAL Packaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V |
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LM2904MX | onsemi |
 Description: LM2904-N LOW POWER DUAL OPERATIOPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 800µA (x2 Channels) Gain Bandwidth Product: 1 MHz Current - Input Bias: 45 nA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 26 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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PN2907TA | onsemi |
Description: TRANS PNP 40V 0.8A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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KSC945CGBU | onsemi |
Description: TRANS NPN 50V 0.15A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
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NLAS8252MUTAG | onsemi |
Description: IC SWITCH DP3T 12UQFN Packaging: Tape & Reel (TR) Features: USB 2.0 Package / Case: 12-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: UART, USB On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 200MHz Supplier Device Package: 12-UQFN (1.7x2) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Switch Circuit: DP3T Number of Channels: 2 |
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FDI038AN06A0 | onsemi |
Description: MOSFET N-CH 60V 17A/80A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
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BC547A | onsemi |
Description: BJT TO92 45V 100MA NPN 0.5W 150C Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
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PCA9306AMUTCG | onsemi |
Description: IC TRNSLTR BIDIRECTIONAL 8UQFN Packaging: Bulk Features: Auto-Direction Sensing Package / Case: 8-UFQFN Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: 8-UQFN (1.6x1.6) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
на замовлення 223094 шт: термін постачання 21-31 дні (днів) |
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KA431AZBU | onsemi |
Description: IC VREF SHUNT ADJ 1% TO92-3 Packaging: Bulk Tolerance: ±1% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 7060 шт: термін постачання 21-31 дні (днів) |
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TIP32CTU | onsemi |
Description: TRANS PNP 100V 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
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1N5391 | onsemi |
Description: DIODE DO15 50V 1.5A 175C Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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NVBG089N65S3F | onsemi |
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V Power Dissipation (Max): 291W (Tc) Vgs(th) (Max) @ Id: 5V @ 970µA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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SBRB2545CTG | onsemi |
Description: DIODE ARR SCHOTT 45V 15A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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1N5350B | onsemi |
Description: DIODE ZENER 13V 5W AXIAL Packaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V |
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2SC6043-AE | onsemi |
Description: TRANS NPN 50V 2A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
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BZX84C39LT3G | onsemi |
Description: DIODE ZENER 39V 250MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V |
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BZX84C39LT1 | onsemi |
Description: DIODE ZENER 39V 225MW SOT-23 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V |
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BZX79C7V5 | onsemi |
Description: DIODE ZENER 7.5V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 5 V |
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BZX84C20LT3 | onsemi |
Description: DIODE ZENER 20V 225MW SOT23-3 Packaging: Bulk Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX84C20 | onsemi |
Description: ZENER SOT23 20V 0.3W 5% Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V |
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BZX84C20 | onsemi |
Description: ZENER SOT23 20V 0.3W 5% Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V |
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BZX84C12 | onsemi |
Description: DIODE ZENER 12V 250MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
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BZX84C12 | onsemi |
Description: DIODE ZENER 12V 250MW SOT23-3 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
товар відсутній |
| NB4N121KMNGEVB |
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Виробник: onsemi
Description: BOARD EVAL NB4N121 FANOUT BUFFER
Packaging: Box
Function: Clock Distribution
Type: Timing
Utilized IC / Part: NB4N121K
Supplied Contents: Board(s)
Description: BOARD EVAL NB4N121 FANOUT BUFFER
Packaging: Box
Function: Clock Distribution
Type: Timing
Utilized IC / Part: NB4N121K
Supplied Contents: Board(s)
товар відсутній
| SS9012GBU |
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Виробник: onsemi
Description: TRANS PNP 20V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 112 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: TRANS PNP 20V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 112 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
товар відсутній
| NVLJWS070N06CLTAG |
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Виробник: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
Power Dissipation (Max): 2.4W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| SBS806M-TL-E |
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1567+ | 13.36 грн |
| NCP1010AP100 |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage
Power (Watts): 19 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Load, Over Temperature, Over Voltage
Power (Watts): 19 W
на замовлення 2964 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1110+ | 18.98 грн |
| HGTG30N60C3D |
|
Виробник: onsemi
Description: IGBT 600V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Description: IGBT 600V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
товар відсутній
| LA4450L-E |
Виробник: onsemi
Description: IC AMP CLASS AB STEREO 20W 14SIP
Packaging: Tube
Features: Short-Circuit and Thermal Protection, Standby
Package / Case: 14-SIP
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -35°C ~ 80°C (TA)
Voltage - Supply: 10V ~ 30V
Max Output Power x Channels @ Load: 20W x 1 @ 4Ohm
Supplier Device Package: 14-SIP
Description: IC AMP CLASS AB STEREO 20W 14SIP
Packaging: Tube
Features: Short-Circuit and Thermal Protection, Standby
Package / Case: 14-SIP
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -35°C ~ 80°C (TA)
Voltage - Supply: 10V ~ 30V
Max Output Power x Channels @ Load: 20W x 1 @ 4Ohm
Supplier Device Package: 14-SIP
на замовлення 30375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 91+ | 234.1 грн |
| FDS8882 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
товар відсутній
| FDS8882 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
Description: MOSFET N-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
на замовлення 81 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.28 грн |
| 10+ | 44.94 грн |
| MOC3033VM |
|
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
товар відсутній
| MOC3023 |
|
Виробник: onsemi
Description: ISOL 5.3KVRMS 1CH TRIAC OUT 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
Description: ISOL 5.3KVRMS 1CH TRIAC OUT 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Voltage - Isolation: 5300Vrms
Current - Hold (Ih): 100µA
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 50 mA
товар відсутній
| 1N5351B |
|
Виробник: onsemi
Description: DIODE ZENER 14V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V
Description: DIODE ZENER 14V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V
товар відсутній
| IRF644B-FP001 |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 250V 14A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
| FDD5680 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
товар відсутній
| FDD5680 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
Description: MOSFET N-CH 60V 8.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 30 V
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.48 грн |
| 10+ | 73.61 грн |
| 100+ | 57.21 грн |
| 500+ | 45.51 грн |
| 1000+ | 37.08 грн |
| KAI-16050-FXA-JD-B2 |
|
Виробник: onsemi
Description: IMAGE SENSOR CCD 16MP 71CPGA
Packaging: Bulk
Package / Case: 71-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 4896H x 3264V
Supplier Device Package: 72-CPGA (47.24x45.34)
Frames per Second: 2.0
Description: IMAGE SENSOR CCD 16MP 71CPGA
Packaging: Bulk
Package / Case: 71-BCPGA
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 5.5µm x 5.5µm
Active Pixel Array: 4896H x 3264V
Supplier Device Package: 72-CPGA (47.24x45.34)
Frames per Second: 2.0
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 190022.56 грн |
| MBR2045CT |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 91684 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 513+ | 41.48 грн |
| MBR2045CT |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
| SZBZX84C68LT1G |
|
Виробник: onsemi
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.12 грн |
| 6000+ | 1.93 грн |
| 9000+ | 1.64 грн |
| 30000+ | 1.42 грн |
| 75000+ | 1.23 грн |
| SZBZX84C68LT1G |
|
Виробник: onsemi
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.06 грн |
| 35+ | 8.42 грн |
| 100+ | 4.52 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.31 грн |
| SZBZX84C62ET1G |
|
Виробник: onsemi
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.65 грн |
| 6000+ | 2.37 грн |
| 9000+ | 1.96 грн |
| SZBZX84C62ET1G |
|
Виробник: onsemi
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
Description: DIODE ZENER 62V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.83 грн |
| 28+ | 10.45 грн |
| 100+ | 5.08 грн |
| 500+ | 3.98 грн |
| 1000+ | 2.77 грн |
| SZBZX84C68ET1G |
|
Виробник: onsemi
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.9 грн |
| 6000+ | 2.59 грн |
| 9000+ | 2.15 грн |
| SZBZX84C68ET1G |
|
Виробник: onsemi
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 68V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.34 грн |
| 26+ | 11.4 грн |
| 100+ | 5.57 грн |
| 500+ | 4.36 грн |
| 1000+ | 3.03 грн |
| KA3842B |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 97%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 16 V
Control Features: Frequency Control
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 97%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 8-DIP
Voltage - Start Up: 16 V
Control Features: Frequency Control
товар відсутній
| FGA5065ADF |
|
Виробник: onsemi
Description: IGBT TRENCH/FS 650V 100A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/62.4ns
Switching Energy: 1.35mJ (on), 309µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 72.2 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 268 W
Description: IGBT TRENCH/FS 650V 100A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20.8ns/62.4ns
Switching Energy: 1.35mJ (on), 309µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 72.2 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 268 W
товар відсутній
| FQPF19N20T |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 11.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 100V 11.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
| FAN7530N |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-DIP
Current - Startup: 40 µA
Description: IC PFC CTRLR CRM/TRANSITION 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 22V
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Supplier Device Package: 8-DIP
Current - Startup: 40 µA
товар відсутній
| BC557B |
|
Виробник: onsemi
Description: BJT TO92 45V 100MA PNP 0.5W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: BJT TO92 45V 100MA PNP 0.5W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товар відсутній
| BC557C |
|
Виробник: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
товар відсутній
| BD13616STU |
|
Виробник: onsemi
Description: TRANS PNP 45V 1.5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Description: TRANS PNP 45V 1.5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 331 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.23 грн |
| 60+ | 36.03 грн |
| 120+ | 26.15 грн |
| NV25640DTVLT3G |
Виробник: onsemi
Description: 64KB SPI SER CMOS EEPROM FOR VCC
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
Description: 64KB SPI SER CMOS EEPROM FOR VCC
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
товар відсутній
| NV25640DTVLT3G |
Виробник: onsemi
Description: 64KB SPI SER CMOS EEPROM FOR VCC
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
Description: 64KB SPI SER CMOS EEPROM FOR VCC
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 8K x 8
Qualification: AEC-Q100
товар відсутній
| 1N4004 |
|
Виробник: onsemi
Description: DIODE DO41 400V 1A 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE DO41 400V 1A 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| 1N4004 |
|
Виробник: onsemi
Description: DIODE DO41 400V 1A 175C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE DO41 400V 1A 175C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| 1N5359B |
|
Виробник: onsemi
Description: DIODE ZENER 24V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Description: DIODE ZENER 24V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
товар відсутній
| LM2904MX | |
|
Виробник: onsemi
Description: LM2904-N LOW POWER DUAL OPERATIO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 800µA (x2 Channels)
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
Description: LM2904-N LOW POWER DUAL OPERATIO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 800µA (x2 Channels)
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 431+ | 49.21 грн |
| PN2907TA |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
| KSC945CGBU |
|
Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.15A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
товар відсутній
| NLAS8252MUTAG |
|
Виробник: onsemi
Description: IC SWITCH DP3T 12UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: UART, USB
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DP3T
Number of Channels: 2
Description: IC SWITCH DP3T 12UQFN
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: UART, USB
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 12-UQFN (1.7x2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Switch Circuit: DP3T
Number of Channels: 2
товар відсутній
| FDI038AN06A0 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Description: MOSFET N-CH 60V 17A/80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
товар відсутній
| BC547A |
|
Виробник: onsemi
Description: BJT TO92 45V 100MA NPN 0.5W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: BJT TO92 45V 100MA NPN 0.5W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товар відсутній
| PCA9306AMUTCG |
|
Виробник: onsemi
Description: IC TRNSLTR BIDIRECTIONAL 8UQFN
Packaging: Bulk
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UQFN (1.6x1.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: IC TRNSLTR BIDIRECTIONAL 8UQFN
Packaging: Bulk
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: 8-UQFN (1.6x1.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
на замовлення 223094 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 904+ | 23.2 грн |
| KA431AZBU |
|
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Bulk
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Bulk
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 7060 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.39 грн |
| 16+ | 18.87 грн |
| 25+ | 17.05 грн |
| 100+ | 8.72 грн |
| 250+ | 8.43 грн |
| 500+ | 7.56 грн |
| 1000+ | 5.72 грн |
| 2500+ | 5.15 грн |
| 5000+ | 4.86 грн |
| TIP32CTU | |
|
Виробник: onsemi
Description: TRANS PNP 100V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
товар відсутній
| 1N5391 |
|
Виробник: onsemi
Description: DIODE DO15 50V 1.5A 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE DO15 50V 1.5A 175C
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
| NVBG089N65S3F |
|
Виробник: onsemi
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 5V @ 970µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V
Qualification: AEC-Q101
Description: SF3 FRFET AUTO, 89MOHM, D2PAK 7L
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 18.5A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 5V @ 970µA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3598 pF @ 400 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 655.12 грн |
| 10+ | 540.76 грн |
| 100+ | 450.63 грн |
| SBRB2545CTG |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 45V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 15A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 327+ | 64.67 грн |
| 1N5350B |
|
Виробник: onsemi
Description: DIODE ZENER 13V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
Description: DIODE ZENER 13V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
товар відсутній
| 2SC6043-AE |
|
Виробник: onsemi
Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 2A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
товар відсутній
| BZX84C39LT3G |
|
Виробник: onsemi
Description: DIODE ZENER 39V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Description: DIODE ZENER 39V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
товар відсутній
| BZX84C39LT1 |
|
Виробник: onsemi
Description: DIODE ZENER 39V 225MW SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Description: DIODE ZENER 39V 225MW SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
товар відсутній
| BZX79C7V5 |
|
Виробник: onsemi
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
товар відсутній
| BZX84C20LT3 |
|
Виробник: onsemi
Description: DIODE ZENER 20V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Description: DIODE ZENER 20V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 2.11 грн |
| BZX84C20 |
|
Виробник: onsemi
Description: ZENER SOT23 20V 0.3W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Description: ZENER SOT23 20V 0.3W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
товар відсутній
| BZX84C20 |
|
Виробник: onsemi
Description: ZENER SOT23 20V 0.3W 5%
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Description: ZENER SOT23 20V 0.3W 5%
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
товар відсутній
| BZX84C12 |
|
Виробник: onsemi
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
| BZX84C12 |
|
Виробник: onsemi
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 12V 250MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній