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NXH450N65L4Q2F2PG NXH450N65L4Q2F2PG onsemi nxh450n65l4q2f2sg-d.pdf Description: 650V 450A 3-LEVEL NPC INVERTER M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 36-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+8756.73 грн
10+ 7805.55 грн
NXH450N65L4Q2F2S1G onsemi nxh450n65l4q2f2s1g-d.pdf Description: 120KW 1100V Q2PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 40-PIM/Q2PACK (107.2x47)
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+9224.5 грн
12+ 8222.88 грн
NCV317BD2TR4G NCV317BD2TR4G onsemi lm317-d.pdf Description: IC REG LIN POS ADJ 1.5A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
829+25.35 грн
Мінімальне замовлення: 829
NRVSRD620VCTT4G NRVSRD620VCTT4G onsemi msrd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
2500+30.55 грн
5000+ 28.02 грн
12500+ 26.72 грн
25000+ 25.03 грн
Мінімальне замовлення: 2500
NRVSRD620VCTT4G NRVSRD620VCTT4G onsemi msrd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 39456 шт:
термін постачання 21-31 дні (днів)
5+73.7 грн
10+ 58.15 грн
100+ 45.26 грн
500+ 36 грн
1000+ 29.33 грн
Мінімальне замовлення: 5
MPS2907ARLRM MPS2907ARLRM onsemi MPS2907%20SERIES.pdf Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
6662+3.47 грн
Мінімальне замовлення: 6662
MMSZ5245B MMSZ5245B onsemi MMSZ5227B.pdf Description: DIODE ZENER 15V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
MMSZ5245B MMSZ5245B onsemi MMSZ5227B.pdf Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
2SA2039-E 2SA2039-E onsemi en6912-d.pdf Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 322265 шт:
термін постачання 21-31 дні (днів)
705+30.28 грн
Мінімальне замовлення: 705
2SA2040-E 2SA2040-E onsemi en6913-d.pdf Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 11718 шт:
термін постачання 21-31 дні (днів)
857+24.3 грн
Мінімальне замовлення: 857
LA5735M-TE-L-E LA5735M-TE-L-E onsemi LA5735M.pdf Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
392+53.47 грн
Мінімальне замовлення: 392
LV8013T-A-TLM-E LV8013T-A-TLM-E onsemi LV8013T.pdf Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
товар відсутній
LV8013T-A-TLM-E LV8013T-A-TLM-E onsemi LV8013T.pdf Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
на замовлення 60854 шт:
термін постачання 21-31 дні (днів)
137+152.08 грн
Мінімальне замовлення: 137
FLZ12VC FLZ12VC onsemi FAIRS44737-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
товар відсутній
FLZ12VC FLZ12VC onsemi FAIRS44737-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
товар відсутній
FAN3227CMX FAN3227CMX onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 12483 шт:
термін постачання 21-31 дні (днів)
2500+63.92 грн
5000+ 59.18 грн
Мінімальне замовлення: 2500
FAN3227CMX FAN3227CMX onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 14908 шт:
термін постачання 21-31 дні (днів)
3+145.14 грн
10+ 125.43 грн
25+ 118.36 грн
100+ 88.86 грн
250+ 77.75 грн
500+ 75.53 грн
1000+ 59 грн
Мінімальне замовлення: 3
FAN3223TMX-F085 FAN3223TMX-F085 onsemi ONSM-S-A0004903499-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
FAN3228TMX-F085 FAN3228TMX-F085 onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+86.26 грн
Мінімальне замовлення: 2500
FAN3228TMX-F085 FAN3228TMX-F085 onsemi ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
NE5532D NE5532D onsemi NE5532.pdf Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
товар відсутній
1SMF16BT3 1SMF16BT3 onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1SMF16BT3G 1SMF16BT3G onsemi Description: TVS ZENER 175W 16V SOD123FL
Packaging: Tape & Reel (TR)
товар відсутній
1SMF16BT1 1SMF16BT1 onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1SMF16BT1G 1SMF16BT1G onsemi Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
NRTS6100TFSTWG NRTS6100TFSTWG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTWG NRTS6100TFSTWG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTAG NRTS6100TFSTAG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTAG NRTS6100TFSTAG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 1470 шт:
термін постачання 21-31 дні (днів)
MBR8170TFSTWG MBR8170TFSTWG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTWG MBR8170TFSTWG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTXG MBR8170TFSTXG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTXG MBR8170TFSTXG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTBG MBR8170TFSTBG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTBG MBR8170TFSTBG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTAG MBR8170TFSTAG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTAG MBR8170TFSTAG onsemi mbr8170tfs-d.pdf Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
NTTD4401FR2 NTTD4401FR2 onsemi nttd4401f-d.pdf Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
на замовлення 5853 шт:
термін постачання 21-31 дні (днів)
NRVTS5100ETFSTAG NRVTS5100ETFSTAG onsemi nrvts5100etfs-d.pdf Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
NRVTS360ETFSTAG NRVTS360ETFSTAG onsemi NRVTS360TFS-D.pdf Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+11.53 грн
3000+ 9.93 грн
Мінімальне замовлення: 1500
NRVTS360ETFSTAG NRVTS360ETFSTAG onsemi NRVTS360TFS-D.pdf Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
10+30.08 грн
12+ 25.2 грн
100+ 17.5 грн
500+ 12.82 грн
Мінімальне замовлення: 10
NRTS6100TFSTXG NRTS6100TFSTXG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTXG NRTS6100TFSTXG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTBG NRTS6100TFSTBG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTBG NRTS6100TFSTBG onsemi nrts6100tfs-d.pdf Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRVTS360ETFSWFTAG NRVTS360ETFSWFTAG onsemi NRVTS360ETFS-D.PDF Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS360ETFSWFTAG NRVTS360ETFSWFTAG onsemi NRVTS360ETFS-D.PDF Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
8+39.86 грн
10+ 32.95 грн
100+ 22.94 грн
500+ 16.81 грн
Мінімальне замовлення: 8
NRVTS560ETFSWFTWG NRVTS560ETFSWFTWG onsemi nrvts560etfs-d.pdf Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS560ETFSWFTWG NRVTS560ETFSWFTWG onsemi nrvts560etfs-d.pdf Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS560ETFSWFTAG NRVTS560ETFSWFTAG onsemi Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS560ETFSWFTAG NRVTS560ETFSWFTAG onsemi Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
FFSH30120ADN-F155 FFSH30120ADN-F155 onsemi ffsh30120adn-d.pdf Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
1+1158.14 грн
30+ 902.74 грн
120+ 849.63 грн
510+ 722.59 грн
BZX55C22 BZX55C22 onsemi BZX55C2V4 - BZX55C56.pdf Description: DIODE ZENER 22V 500MW DO35
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
MMBF5461 MMBF5461 onsemi MMBF5460-62.pdf Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товар відсутній
P6KE33ARL P6KE33ARL onsemi P6KE6.8A_Series.pdf Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
P6KE33ARL P6KE33ARL onsemi P6KE6.8A_Series.pdf Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
BZX85C4V7 BZX85C4V7 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 4.7V 1W DO204AL
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1.5 V
товар відсутній
SI3457DV SI3457DV onsemi si3457dv-d.pdf Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товар відсутній
SI3457DV SI3457DV onsemi si3457dv-d.pdf Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товар відсутній
SZESD7571N2T5G SZESD7571N2T5G onsemi ESD7571-D.PDF Description: ESD7MicPackagDiodfEProtection
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 3500pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111442 шт:
термін постачання 21-31 дні (днів)
2766+7.64 грн
Мінімальне замовлення: 2766
NXH450N65L4Q2F2PG nxh450n65l4q2f2sg-d.pdf
NXH450N65L4Q2F2PG
Виробник: onsemi
Description: 650V 450A 3-LEVEL NPC INVERTER M
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 36-PIM/Q2PACK (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8756.73 грн
10+ 7805.55 грн
NXH450N65L4Q2F2S1G nxh450n65l4q2f2s1g-d.pdf
Виробник: onsemi
Description: 120KW 1100V Q2PACK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 225A
NTC Thermistor: No
Supplier Device Package: 40-PIM/Q2PACK (107.2x47)
IGBT Type: Field Stop
Current - Collector (Ic) (Max): 167 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 365 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 14630 pF @ 20 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+9224.5 грн
12+ 8222.88 грн
NCV317BD2TR4G lm317-d.pdf
NCV317BD2TR4G
Виробник: onsemi
Description: IC REG LIN POS ADJ 1.5A D2PAK-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -55°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Grade: Automotive
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
829+25.35 грн
Мінімальне замовлення: 829
NRVSRD620VCTT4G msrd620ct-d.pdf
NRVSRD620VCTT4G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+30.55 грн
5000+ 28.02 грн
12500+ 26.72 грн
25000+ 25.03 грн
Мінімальне замовлення: 2500
NRVSRD620VCTT4G msrd620ct-d.pdf
NRVSRD620VCTT4G
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 39456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+73.7 грн
10+ 58.15 грн
100+ 45.26 грн
500+ 36 грн
1000+ 29.33 грн
Мінімальне замовлення: 5
MPS2907ARLRM MPS2907%20SERIES.pdf
MPS2907ARLRM
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6662+3.47 грн
Мінімальне замовлення: 6662
MMSZ5245B MMSZ5227B.pdf
MMSZ5245B
Виробник: onsemi
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
MMSZ5245B MMSZ5227B.pdf
MMSZ5245B
Виробник: onsemi
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
2SA2039-E en6912-d.pdf
2SA2039-E
Виробник: onsemi
Description: TRANS PNP 50V 5A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 322265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
705+30.28 грн
Мінімальне замовлення: 705
2SA2040-E en6913-d.pdf
2SA2040-E
Виробник: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 11718 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
857+24.3 грн
Мінімальне замовлення: 857
LA5735M-TE-L-E LA5735M.pdf
LA5735M-TE-L-E
Виробник: onsemi
Description: IC REG BUCK ADJ 700MA 8MFP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 700mA (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 32V
Topology: Buck
Supplier Device Package: 8-MFP
Synchronous Rectifier: No
Voltage - Output (Max): 32V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
на замовлення 1575 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
392+53.47 грн
Мінімальне замовлення: 392
LV8013T-A-TLM-E LV8013T.pdf
LV8013T-A-TLM-E
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
товар відсутній
LV8013T-A-TLM-E LV8013T.pdf
LV8013T-A-TLM-E
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.2A 24TSSOP
Packaging: Bulk
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Rds On (Typ): 300mOhm
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.2A
Current - Peak Output: 2A, 3.8A
Technology: DMOS
Voltage - Load: 2V ~ 15V
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature
Load Type: Inductive
на замовлення 60854 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
137+152.08 грн
Мінімальне замовлення: 137
FLZ12VC FAIRS44737-1.pdf?t.download=true&u=5oefqw
FLZ12VC
Виробник: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
товар відсутній
FLZ12VC FAIRS44737-1.pdf?t.download=true&u=5oefqw
FLZ12VC
Виробник: onsemi
Description: DIODE ZENER 12.1V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±3%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12.1 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: SOD-80
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 133 nA @ 9 V
товар відсутній
FAN3227CMX ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3227CMX
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 12483 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+63.92 грн
5000+ 59.18 грн
Мінімальне замовлення: 2500
FAN3227CMX ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3227CMX
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
DigiKey Programmable: Not Verified
на замовлення 14908 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+145.14 грн
10+ 125.43 грн
25+ 118.36 грн
100+ 88.86 грн
250+ 77.75 грн
500+ 75.53 грн
1000+ 59 грн
Мінімальне замовлення: 3
FAN3223TMX-F085 ONSM-S-A0004903499-1.pdf?t.download=true&u=5oefqw
FAN3223TMX-F085
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
FAN3228TMX-F085 ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3228TMX-F085
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+86.26 грн
Мінімальне замовлення: 2500
FAN3228TMX-F085 ONSM-S-A0003539099-1.pdf?t.download=true&u=5oefqw
FAN3228TMX-F085
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
NE5532D NE5532.pdf
NE5532D
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 8mA
Slew Rate: 9V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 200 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 16-SOIC
Number of Circuits: 2
Current - Output / Channel: 38 mA
Voltage - Supply Span (Min): 6 V
Voltage - Supply Span (Max): 40 V
товар відсутній
1SMF16BT3
1SMF16BT3
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1SMF16BT3G
1SMF16BT3G
Виробник: onsemi
Description: TVS ZENER 175W 16V SOD123FL
Packaging: Tape & Reel (TR)
товар відсутній
1SMF16BT1
1SMF16BT1
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
1SMF16BT1G
1SMF16BT1G
Виробник: onsemi
Description: TVS DIODE 16VWM 26VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: SOD-123FL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
товар відсутній
NRTS6100TFSTWG nrts6100tfs-d.pdf
NRTS6100TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTWG nrts6100tfs-d.pdf
NRTS6100TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTAG nrts6100tfs-d.pdf
NRTS6100TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTAG nrts6100tfs-d.pdf
NRTS6100TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 1470 шт:
термін постачання 21-31 дні (днів)
MBR8170TFSTWG mbr8170tfs-d.pdf
MBR8170TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTWG mbr8170tfs-d.pdf
MBR8170TFSTWG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTXG mbr8170tfs-d.pdf
MBR8170TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTXG mbr8170tfs-d.pdf
MBR8170TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTBG mbr8170tfs-d.pdf
MBR8170TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTBG mbr8170tfs-d.pdf
MBR8170TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTAG mbr8170tfs-d.pdf
MBR8170TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
товар відсутній
MBR8170TFSTAG mbr8170tfs-d.pdf
MBR8170TFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 170V 8A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 237pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 170 V
на замовлення 1390 шт:
термін постачання 21-31 дні (днів)
NTTD4401FR2 nttd4401f-d.pdf
NTTD4401FR2
Виробник: onsemi
Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
на замовлення 5853 шт:
термін постачання 21-31 дні (днів)
NRVTS5100ETFSTAG nrvts5100etfs-d.pdf
NRVTS5100ETFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 5A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26.5pF @ 100V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
NRVTS360ETFSTAG NRVTS360TFS-D.pdf
NRVTS360ETFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+11.53 грн
3000+ 9.93 грн
Мінімальне замовлення: 1500
NRVTS360ETFSTAG NRVTS360TFS-D.pdf
NRVTS360ETFSTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.08 грн
12+ 25.2 грн
100+ 17.5 грн
500+ 12.82 грн
Мінімальне замовлення: 10
NRTS6100TFSTXG nrts6100tfs-d.pdf
NRTS6100TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTXG nrts6100tfs-d.pdf
NRTS6100TFSTXG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTBG nrts6100tfs-d.pdf
NRTS6100TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRTS6100TFSTBG nrts6100tfs-d.pdf
NRTS6100TFSTBG
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 782pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
товар відсутній
NRVTS360ETFSWFTAG NRVTS360ETFS-D.PDF
NRVTS360ETFSWFTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS360ETFSWFTAG NRVTS360ETFS-D.PDF
NRVTS360ETFSWFTAG
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 12 µA @ 60 V
Qualification: AEC-Q101
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+39.86 грн
10+ 32.95 грн
100+ 22.94 грн
500+ 16.81 грн
Мінімальне замовлення: 8
NRVTS560ETFSWFTWG nrvts560etfs-d.pdf
NRVTS560ETFSWFTWG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS560ETFSWFTWG nrvts560etfs-d.pdf
NRVTS560ETFSWFTWG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS560ETFSWFTAG
NRVTS560ETFSWFTAG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
NRVTS560ETFSWFTAG
NRVTS560ETFSWFTAG
Виробник: onsemi
Description: 60V LOW LEAKAGE TRENCH RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: 8-WDFN (3.3x3.3)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
FFSH30120ADN-F155 ffsh30120adn-d.pdf
FFSH30120ADN-F155
Виробник: onsemi
Description: DIODE ARR SIC 1200V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1158.14 грн
30+ 902.74 грн
120+ 849.63 грн
510+ 722.59 грн
BZX55C22 BZX55C2V4 - BZX55C56.pdf
BZX55C22
Виробник: onsemi
Description: DIODE ZENER 22V 500MW DO35
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
MMBF5461 MMBF5460-62.pdf
MMBF5461
Виробник: onsemi
Description: JFET P-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
товар відсутній
P6KE33ARL P6KE6.8A_Series.pdf
P6KE33ARL
Виробник: onsemi
Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
P6KE33ARL P6KE6.8A_Series.pdf
P6KE33ARL
Виробник: onsemi
Description: TVS DIODE 28.2VWM 45.7VC AXIAL
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
товар відсутній
BZX85C4V7 BZX85C3V3-C56.pdf
BZX85C4V7
Виробник: onsemi
Description: DIODE ZENER 4.7V 1W DO204AL
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1.5 V
товар відсутній
SI3457DV si3457dv-d.pdf
SI3457DV
Виробник: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товар відсутній
SI3457DV si3457dv-d.pdf
SI3457DV
Виробник: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товар відсутній
SZESD7571N2T5G ESD7571-D.PDF
SZESD7571N2T5G
Виробник: onsemi
Description: ESD7MicPackagDiodfEProtection
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 3500pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 111442 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2766+7.64 грн
Мінімальне замовлення: 2766
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