Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MMBZ5226BLT3G | onsemi |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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MMBZ5226ELT1 | onsemi |
![]() Packaging: Bulk Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
на замовлення 62950 шт: термін постачання 21-31 дні (днів) |
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MMBZ5226B | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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MMBZ5226B | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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MC34067DWG | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: 2.05MHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.6V ~ 20V Supplier Device Package: 16-SOIC Synchronous Rectifier: No Control Features: Enable, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 2 |
на замовлення 1133 шт: термін постачання 21-31 дні (днів) |
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MC34067PG | onsemi |
![]() Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Driver Mounting Type: Through Hole Function: Step-Up/Step-Down Operating Temperature: 0°C ~ 70°C (TA) Output Configuration: Positive, Isolation Capable Frequency - Switching: 2.05MHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.6V ~ 20V Supplier Device Package: 16-PDIP Synchronous Rectifier: No Control Features: Enable, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 2 |
на замовлення 6700 шт: термін постачання 21-31 дні (днів) |
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FMS6363CSX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 4.75V ~ 5.25V Applications: Consumer Video Supplier Device Package: 8-SOIC |
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FMS6363CS | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 4.75V ~ 5.25V Applications: Consumer Video Supplier Device Package: 8-SOIC |
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FMS6364AMTC14X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver Voltage - Supply: 3.13V ~ 5.25V Applications: Consumer Video Supplier Device Package: 14-TSSOP |
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LC898219XI-MH | onsemi |
Description: IC MOTOR DRIVER 8WLCSP Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 1.4A Interface: I2C Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 2.6V ~ 3.3V Voltage - Load: 0V ~ 3.3V Supplier Device Package: 8-WLCSP (0.97x2.25) Motor Type - Stepper: Bipolar Grade: Automotive |
товар відсутній |
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LC898219XI-MH | onsemi |
Description: IC MOTOR DRIVER 8WLCSP Packaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 1.4A Interface: I2C Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 2.6V ~ 3.3V Voltage - Load: 0V ~ 3.3V Supplier Device Package: 8-WLCSP (0.97x2.25) Motor Type - Stepper: Bipolar Grade: Automotive |
на замовлення 3999 шт: термін постачання 21-31 дні (днів) |
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MICROFJ-SMA-30035-GEVB | onsemi |
![]() Packaging: Bulk Interface: Analog Sensor Type: Light, Silicon Photomultiplier (SiPM) Utilized IC / Part: MicroFJ-30035 Supplied Contents: Board(s) |
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MC78L08ABPRA | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): 8V PSRR: 57dB (120Hz) Protection Features: Over Temperature, Short Circuit |
на замовлення 2161 шт: термін постачання 21-31 дні (днів) |
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BAS20LT1 | onsemi |
![]() Packaging: Bulk |
на замовлення 3915000 шт: термін постачання 21-31 дні (днів) |
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BAS20HT1 | onsemi |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 569000 шт: термін постачання 21-31 дні (днів) |
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BAV99LT3 | onsemi |
![]() Packaging: Tape & Reel (TR) |
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FFSD10120A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Supplier Device Package: TO-252AA Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
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FFSD10120A | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 612pF @ 1V, 100kHz Supplier Device Package: TO-252AA Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 1915 шт: термін постачання 21-31 дні (днів) |
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NTD25P03LT4 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V Power Dissipation (Max): 75W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V |
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STD25P03LT4G | onsemi |
Description: MOSFET P-CH 30V 25A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V |
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MC74VHC4053MG | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 120MHz Supplier Device Package: 16-SOEIAJ Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 50pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 |
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FQP13N06 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
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DTA144WM3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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DTA144WM3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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DTA144WM3T5G | onsemi |
![]() Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
на замовлення 149473 шт: термін постачання 21-31 дні (днів) |
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DTA144EM3T5G | onsemi |
![]() Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 849745 шт: термін постачання 21-31 дні (днів) |
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DTA144TT1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 47 kOhms |
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DTA144WET1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
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MUN5113T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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MUN5113T1G | onsemi |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 190000 шт: термін постачання 21-31 дні (днів) |
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SMUN5113T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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SMUN5113T1G | onsemi |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 83600 шт: термін постачання 21-31 дні (днів) |
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NCV8668ABD250R2G | onsemi |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 43 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: 14-SOIC Voltage - Output (Min/Fixed): 5V Control Features: Enable, Reset, Watchdog Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.6V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 44 µA Qualification: AEC-Q100 |
на замовлення 14514 шт: термін постачання 21-31 дні (днів) |
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DBD250G | onsemi |
![]() Packaging: Bulk Package / Case: 4-Square Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: 150°C (TJ) Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 5750 шт: термін постачання 21-31 дні (днів) |
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MUN5113T3G | onsemi |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 209850 шт: термін постачання 21-31 дні (днів) |
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NSVMUN5113DW1T3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
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NSVMUN5113DW1T3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
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FCA20N60 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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HGTG20N60B3 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-247-3 Switching Energy: 475µJ (on), 1.05mJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 80 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 165 W |
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FCB20N60F-F085 | onsemi |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 640 шт: термін постачання 21-31 дні (днів) |
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AR1335CSSC32SMD20-RC1 | onsemi |
Description: 13 MP 1/3 CIS SO Packaging: Tray Package / Case: 63-WFBGA, CSPBGA Type: CMOS Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 63-ODCSP (6.29x5.69) Frames per Second: 30 |
на замовлення 1344 шт: термін постачання 21-31 дні (днів) |
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NTHL017N60S5H | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 16mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V |
на замовлення 2549 шт: термін постачання 21-31 дні (днів) |
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SZESDM3551N2T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 21pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 9.9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 8.2V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SZESDM3551N2T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 21pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 9.9A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 8.2V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7091 шт: термін постачання 21-31 дні (днів) |
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MC10H165P | onsemi |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 8:4 Type: Priority Encoder Operating Temperature: 0°C ~ 75°C Voltage - Supply: -4.94V ~ -5.46V Independent Circuits: 1 Voltage Supply Source: Dual Supply Supplier Device Package: 16-PDIP |
товар відсутній |
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LC749402BG-TLM-H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Display Type: LCD Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.7V ~ 3.6V Supplier Device Package: 96-FBGA (6x6) Current - Supply: 57 mA |
товар відсутній |
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LC749402BG-TLM-H | onsemi |
![]() Packaging: Bulk Package / Case: 96-TFBGA Display Type: LCD Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.7V ~ 3.6V Supplier Device Package: 96-FBGA (6x6) Current - Supply: 57 mA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CAT1021WI-30-G | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 10300 шт: термін постачання 21-31 дні (днів) |
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CAT1021LI-30-G | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 3V Supplier Device Package: 8-PDIP DigiKey Programmable: Not Verified |
на замовлення 4450 шт: термін постачання 21-31 дні (днів) |
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CAT1021LI-30-G | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 3V Supplier Device Package: 8-PDIP DigiKey Programmable: Not Verified |
товар відсутній |
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LE25S161CA-Z1 | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 90°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH Clock Frequency: 70 MHz Memory Format: FLASH Supplier Device Package: 8-VSOIC Write Cycle Time - Word, Page: 700µs Memory Interface: SPI Access Time: 8 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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FQP10N20C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
товар відсутній |
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FQI4N90TU | onsemi |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
на замовлення 3792 шт: термін постачання 21-31 дні (днів) |
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FQI4N90TU | onsemi |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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BC213 | onsemi |
Description: TRANS PNP 30V 0.5A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товар відсутній |
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NDT01N60T1G | onsemi |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 50µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
на замовлення 138431 шт: термін постачання 21-31 дні (днів) |
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FQD1N60CTM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
товар відсутній |
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FQD1N60CTM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
товар відсутній |
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FQD1N60CTM | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
на замовлення 9264 шт: термін постачання 21-31 дні (днів) |
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NCP10670BD060R2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Duty Cycle: 66% Frequency - Switching: 60kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Either Topology: Buck, Buck-Boost, Flyback Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit Voltage - Start Up: 9 V Control Features: Soft Start Power (Watts): 2.7 W |
товар відсутній |
MMBZ5226BLT3G |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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11539+ | 2.06 грн |
MMBZ5226ELT1 |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
на замовлення 62950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6662+ | 3.44 грн |
MMBZ5226B |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
MMBZ5226B |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 350MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 350MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
MC34067DWG |
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Виробник: onsemi
Description: IC REG CTRLR FLYBACK 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 2.05MHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.6V ~ 20V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: No
Control Features: Enable, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
Description: IC REG CTRLR FLYBACK 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 2.05MHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.6V ~ 20V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: No
Control Features: Enable, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
на замовлення 1133 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
229+ | 91.87 грн |
MC34067PG |
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Виробник: onsemi
Description: IC REG CTRLR FLYBACK 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 2.05MHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.6V ~ 20V
Supplier Device Package: 16-PDIP
Synchronous Rectifier: No
Control Features: Enable, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
Description: IC REG CTRLR FLYBACK 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive, Isolation Capable
Frequency - Switching: 2.05MHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.6V ~ 20V
Supplier Device Package: 16-PDIP
Synchronous Rectifier: No
Control Features: Enable, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 2
на замовлення 6700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
198+ | 106.6 грн |
FMS6363CSX |
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Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
товар відсутній
FMS6363CS |
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Виробник: onsemi
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
Description: IC VIDEO DRIVER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 4.75V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 8-SOIC
товар відсутній
FMS6364AMTC14X |
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Виробник: onsemi
Description: IC VIDEO FILTER 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Description: IC VIDEO FILTER 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.13V ~ 5.25V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
товар відсутній
LC898219XI-MH |
Виробник: onsemi
Description: IC MOTOR DRIVER 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 1.4A
Interface: I2C
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 2.6V ~ 3.3V
Voltage - Load: 0V ~ 3.3V
Supplier Device Package: 8-WLCSP (0.97x2.25)
Motor Type - Stepper: Bipolar
Grade: Automotive
Description: IC MOTOR DRIVER 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 1.4A
Interface: I2C
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 2.6V ~ 3.3V
Voltage - Load: 0V ~ 3.3V
Supplier Device Package: 8-WLCSP (0.97x2.25)
Motor Type - Stepper: Bipolar
Grade: Automotive
товар відсутній
LC898219XI-MH |
Виробник: onsemi
Description: IC MOTOR DRIVER 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 1.4A
Interface: I2C
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 2.6V ~ 3.3V
Voltage - Load: 0V ~ 3.3V
Supplier Device Package: 8-WLCSP (0.97x2.25)
Motor Type - Stepper: Bipolar
Grade: Automotive
Description: IC MOTOR DRIVER 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 1.4A
Interface: I2C
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 2.6V ~ 3.3V
Voltage - Load: 0V ~ 3.3V
Supplier Device Package: 8-WLCSP (0.97x2.25)
Motor Type - Stepper: Bipolar
Grade: Automotive
на замовлення 3999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.54 грн |
10+ | 92.12 грн |
25+ | 87.48 грн |
100+ | 63.03 грн |
250+ | 55.7 грн |
500+ | 52.77 грн |
1000+ | 40.37 грн |
MICROFJ-SMA-30035-GEVB |
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Виробник: onsemi
Description: J-SERIES 3MM 35U SMA
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroFJ-30035
Supplied Contents: Board(s)
Description: J-SERIES 3MM 35U SMA
Packaging: Bulk
Interface: Analog
Sensor Type: Light, Silicon Photomultiplier (SiPM)
Utilized IC / Part: MicroFJ-30035
Supplied Contents: Board(s)
товар відсутній
MC78L08ABPRA |
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Виробник: onsemi
Description: IC REG LINEAR 8V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 8V
PSRR: 57dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 8V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 8V
PSRR: 57dB (120Hz)
Protection Features: Over Temperature, Short Circuit
на замовлення 2161 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2161+ | 9.82 грн |
BAS20LT1 |
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на замовлення 3915000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.1 грн |
BAS20HT1 |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 200MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 200MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 569000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.1 грн |
BAV99LT3 |
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товар відсутній
FFSD10120A |
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Виробник: onsemi
Description: DIODE SIL CARBIDE 1.2KV TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Supplier Device Package: TO-252AA
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Supplier Device Package: TO-252AA
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товар відсутній
FFSD10120A |
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Виробник: onsemi
Description: DIODE SIL CARBIDE 1.2KV TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Supplier Device Package: TO-252AA
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Supplier Device Package: TO-252AA
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 1915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 426.41 грн |
10+ | 344.93 грн |
100+ | 279.05 грн |
500+ | 232.78 грн |
1000+ | 199.32 грн |
NTD25P03LT4 |
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Виробник: onsemi
Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
товар відсутній
STD25P03LT4G |
Виробник: onsemi
Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
товар відсутній
MC74VHC4053MG |
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Виробник: onsemi
Description: IC SWITCH SPDTX3 100OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Description: IC SWITCH SPDTX3 100OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
товар відсутній
FQP13N06 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 60V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 6.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
товар відсутній
DTA144WM3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
DTA144WM3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
DTA144WM3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 149473 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8435+ | 2.82 грн |
DTA144EM3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 849745 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8987+ | 2.1 грн |
DTA144TT1 |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
товар відсутній
DTA144WET1 |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
MUN5113T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
MUN5113T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 190000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.06 грн |
SMUN5113T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
SMUN5113T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 83600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8103+ | 2.75 грн |
NCV8668ABD250R2G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 150MA 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 44 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 14-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset, Watchdog
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 44 µA
Qualification: AEC-Q100
на замовлення 14514 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
241+ | 86.78 грн |
DBD250G |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 600V 6A
Packaging: Bulk
Package / Case: 4-Square
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 6A
Packaging: Bulk
Package / Case: 4-Square
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
167+ | 123.73 грн |
MUN5113T3G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 209850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11539+ | 2.06 грн |
NSVMUN5113DW1T3G |
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Виробник: onsemi
Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
товар відсутній
NSVMUN5113DW1T3G |
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Виробник: onsemi
Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: TRANS PNP 50V DUAL BIPO SC88-3
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
товар відсутній
FCA20N60 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
на замовлення 446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 443.7 грн |
30+ | 338.68 грн |
120+ | 290.3 грн |
HGTG20N60B3 |
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Виробник: onsemi
Description: IGBT 600V 40A 165W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
Switching Energy: 475µJ (on), 1.05mJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
Description: IGBT 600V 40A 165W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247-3
Switching Energy: 475µJ (on), 1.05mJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 165 W
товар відсутній
FCB20N60F-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
на замовлення 640 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
75+ | 278.13 грн |
AR1335CSSC32SMD20-RC1 |
Виробник: onsemi
Description: 13 MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
Description: 13 MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
на замовлення 1344 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1198 грн |
10+ | 913.56 грн |
25+ | 865.49 грн |
80+ | 699.41 грн |
440+ | 654.29 грн |
945+ | 620.45 грн |
NTHL017N60S5H |
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Виробник: onsemi
Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
Description: SF5 600V FAST 17MOHM WITH TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 16mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 400 V
на замовлення 2549 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1043.83 грн |
10+ | 923.77 грн |
25+ | 885.48 грн |
100+ | 696.22 грн |
450+ | 606.39 грн |
SZESDM3551N2T5G |
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Виробник: onsemi
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SZESDM3551N2T5G |
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Виробник: onsemi
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: BIDIRECTIONAL 5V MID-CAP SURGE I
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 21pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 9.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 8.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7091 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.31 грн |
16+ | 18.68 грн |
25+ | 15.61 грн |
100+ | 8.14 грн |
250+ | 7.17 грн |
500+ | 6.11 грн |
1000+ | 4.09 грн |
2500+ | 3.68 грн |
MC10H165P |
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Виробник: onsemi
Description: IC PRIORITY ENCOD 1 X 8:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:4
Type: Priority Encoder
Operating Temperature: 0°C ~ 75°C
Voltage - Supply: -4.94V ~ -5.46V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
Description: IC PRIORITY ENCOD 1 X 8:4 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 8:4
Type: Priority Encoder
Operating Temperature: 0°C ~ 75°C
Voltage - Supply: -4.94V ~ -5.46V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
товар відсутній
LC749402BG-TLM-H |
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Виробник: onsemi
Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
товар відсутній
LC749402BG-TLM-H |
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Виробник: onsemi
Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
Description: IC DRVR PICT IMPROVEMENT 96FBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Supplier Device Package: 96-FBGA (6x6)
Current - Supply: 57 mA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
59+ | 356.95 грн |
CAT1021WI-30-G |
на замовлення 10300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
317+ | 65.73 грн |
CAT1021LI-30-G |
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Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
на замовлення 4450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
314+ | 66.42 грн |
CAT1021LI-30-G |
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Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 3V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
товар відсутній
LE25S161CA-Z1 |
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Виробник: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI 70MHZ 8VSOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-VSOIC
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
товар відсутній
FQP10N20C |
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Виробник: onsemi
Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 200V 9.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товар відсутній
FQI4N90TU |
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Виробник: onsemi
Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
на замовлення 3792 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
254+ | 82.33 грн |
FQI4N90TU |
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Виробник: onsemi
Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 900V 4.2A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
BC213 |
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
NDT01N60T1G |
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Виробник: onsemi
Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Description: MOSFET N-CH 600V 400MA SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 200mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
на замовлення 138431 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1110+ | 18.93 грн |
FQD1N60CTM |
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Виробник: onsemi
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товар відсутній
FQD1N60CTM |
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Виробник: onsemi
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товар відсутній
FQD1N60CTM |
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Виробник: onsemi
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET N-CH 600V 1A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 9264 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1110+ | 18.75 грн |
NCP10670BD060R2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Power (Watts): 2.7 W
Description: IC OFFLINE SWITCH MULT TOP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Duty Cycle: 66%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Voltage, Short Circuit
Voltage - Start Up: 9 V
Control Features: Soft Start
Power (Watts): 2.7 W
товар відсутній