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MMBT4403K MMBT4403K onsemi MMBT4403K.pdf Description: TRANS PNP 40V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
FSBB15CH60 FSBB15CH60 onsemi FSBB15CH60.pdf Description: SMART POWER MODULE 15A SPM27-CA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товар відсутній
FSBB15CH60F FSBB15CH60F onsemi fsbb15ch60f-d.pdf Description: MODULE SPM 600V SPM27-CA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товар відсутній
BZX85C4V7 BZX85C4V7 onsemi FAIRS45281-1.pdf?t.download=true&u=5oefqw Description: ZENER DIODE, 4.7V, 5%, 1W, UNIDI
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 48117 шт:
термін постачання 21-31 дні (днів)
8876+2.11 грн
Мінімальне замовлення: 8876
MMBZ5234BLT1G MMBZ5234BLT1G onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 6.2V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 49693 шт:
термін постачання 21-31 дні (днів)
31+9.92 грн
45+ 6.61 грн
100+ 3.54 грн
500+ 2.61 грн
1000+ 1.81 грн
Мінімальне замовлення: 31
NXH160T120L2Q1SG NXH160T120L2Q1SG onsemi nxh160t120l2q1-d.pdf Description: PIM Q1 SPLIT T-TYPE NPC 160A 120
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 160A
NTC Thermistor: Yes
Supplier Device Package: 30-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 38164 pF @ 25 V
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
1+6489.68 грн
21+ 5705.38 грн
42+ 5443.29 грн
84+ 4843.44 грн
BAS16LT1 BAS16LT1 onsemi bas16lt1-d.pdf description Description: DIODE SWITCH 200MA 75V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
SMSZ1010T1G onsemi VjnoTaA3sPnQitdFze0QlQ Description: SMSZ1010 - TRANSIENT VOLTAGE SUP
Packaging: Bulk
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
11539+2.09 грн
Мінімальне замовлення: 11539
LM78L12ACZ LM78L12ACZ onsemi MC78LxxAx%2CLM78LXXA.pdf Description: IC REG LINEAR 12V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 12V
PSRR: 65dB (120Hz)
Protection Features: Over Temperature, Short Circuit
товар відсутній
NSVG3109SG6T1G NSVG3109SG6T1G onsemi NSVG3109SG6-D.PDF Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3.6GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3V
Gain: 27dB
Current - Supply: 16mA
Noise Figure: 4.3dB
P1dB: 6.4dBm
Test Frequency: 1GHz
Supplier Device Package: SC-88FL/MCPH6
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4608 шт:
термін постачання 21-31 дні (днів)
8+43.49 грн
10+ 36.67 грн
25+ 34.45 грн
100+ 24.52 грн
250+ 20.87 грн
500+ 19.82 грн
1000+ 14.88 грн
Мінімальне замовлення: 8
NTBL045N065SC1 onsemi ntbl045n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
на замовлення 1964 шт:
термін постачання 21-31 дні (днів)
NTBL045N065SC1 onsemi ntbl045n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
на замовлення 1964 шт:
термін постачання 21-31 дні (днів)
1+938.54 грн
10+ 796.21 грн
100+ 688.59 грн
500+ 585.64 грн
1000+ 537.17 грн
NTMT045N065SC1 onsemi ntmt045n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
товар відсутній
NTMT045N065SC1 onsemi ntmt045n065sc1-d.pdf Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+1173.56 грн
10+ 995.56 грн
100+ 861.07 грн
500+ 732.32 грн
NVH4L045N065SC1 NVH4L045N065SC1 onsemi nvh4l045n065sc1-d.pdf Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
товар відсутній
NLV74HC259ADTR2G NLV74HC259ADTR2G onsemi mc74hc259a-d.pdf Description: IC MULTIPLEXER 8INPUT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NLV74HC259ADTR2G NLV74HC259ADTR2G onsemi mc74hc259a-d.pdf Description: IC MULTIPLEXER 8INPUT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
FPF1321UCX FPF1321UCX onsemi fpf1321-d.pdf Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+41.81 грн
6000+ 38.75 грн
Мінімальне замовлення: 3000
FPF1321UCX FPF1321UCX onsemi fpf1321-d.pdf Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
на замовлення 14036 шт:
термін постачання 21-31 дні (днів)
3+103.77 грн
10+ 89.28 грн
25+ 84.74 грн
100+ 61.07 грн
250+ 53.97 грн
500+ 51.13 грн
1000+ 39.12 грн
Мінімальне замовлення: 3
SNSS30201MR6T1G SNSS30201MR6T1G onsemi NSS30201MR6T1G-D.PDF Description: TRANS NPN 30V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
3000+4.96 грн
6000+ 4.7 грн
Мінімальне замовлення: 3000
SNSS30201MR6T1G SNSS30201MR6T1G onsemi NSS30201MR6T1G-D.PDF Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 98990 шт:
термін постачання 21-31 дні (днів)
10+32.05 грн
14+ 21.82 грн
100+ 11.01 грн
500+ 9.15 грн
1000+ 7.12 грн
Мінімальне замовлення: 10
NSS20201MR6T1G NSS20201MR6T1G onsemi nss20201mr6t1g.pdf Description: TRANS NPN 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
8+41.2 грн
10+ 34.61 грн
100+ 23.95 грн
500+ 18.78 грн
1000+ 15.98 грн
Мінімальне замовлення: 8
FQPF9N25C FQPF9N25C onsemi fqpf9n25c-d.pdf Description: MOSFET N-CH 250V 8.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товар відсутній
FQPF9N25C FQPF9N25C onsemi FAIRS46329-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товар відсутній
NTMFS020N06CT1G NTMFS020N06CT1G onsemi ntmfs020n06c-d.pdf Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
товар відсутній
NTMFS020N06CT1G NTMFS020N06CT1G onsemi ntmfs020n06c-d.pdf Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
7+47.31 грн
10+ 39.02 грн
100+ 26.97 грн
500+ 21.15 грн
Мінімальне замовлення: 7
NVTYS010N06CLTWG NVTYS010N06CLTWG onsemi nvtys010n06cl-d.pdf Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
5+68.67 грн
10+ 54.23 грн
100+ 42.14 грн
500+ 33.52 грн
1000+ 27.31 грн
Мінімальне замовлення: 5
NTNS4CS69NTCG NTNS4CS69NTCG onsemi Description: NTNS4CS69NTCG - TRENCH 6 30V NFE
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 3457078 шт:
термін постачання 21-31 дні (днів)
3957+5.79 грн
Мінімальне замовлення: 3957
4MN10CH-TL-E 4MN10CH-TL-E onsemi Description: BIP NPN 0.1A 200V
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 600mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 200V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: 3-CPH
на замовлення 38970 шт:
термін постачання 21-31 дні (днів)
2049+10.86 грн
Мінімальне замовлення: 2049
SZESD7104MTWTAG SZESD7104MTWTAG onsemi esd7104-d.pdf Description: BI-DIRECTIONAL 4 LINE TVS
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WDFNW (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
10+31.28 грн
13+ 23.15 грн
100+ 13.89 грн
500+ 12.07 грн
1000+ 8.21 грн
Мінімальне замовлення: 10
NSBC123JPDP6T5G NSBC123JPDP6T5G onsemi dtc123jp-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
8000+4.63 грн
16000+ 3.86 грн
24000+ 3.79 грн
56000+ 2.94 грн
Мінімальне замовлення: 8000
NSBC123JPDP6T5G NSBC123JPDP6T5G onsemi dtc123jp-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
12+26.71 грн
17+ 18.15 грн
100+ 9.16 грн
500+ 7.02 грн
1000+ 5.21 грн
2000+ 4.38 грн
Мінімальне замовлення: 12
LA6339ML-TE-L-E onsemi Description: COMPARATORS
Packaging: Bulk
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2049+10.86 грн
Мінімальне замовлення: 2049
NSBC144EDP6T5G NSBC144EDP6T5G onsemi dtc144ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
товар відсутній
NSBC144EDP6T5G NSBC144EDP6T5G onsemi dtc144ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 6762 шт:
термін постачання 21-31 дні (днів)
12+26.71 грн
17+ 18.15 грн
100+ 9.16 грн
500+ 7.02 грн
1000+ 5.21 грн
2000+ 4.38 грн
Мінімальне замовлення: 12
1N5238B 1N5238B onsemi 1n5221b-d.pdf Description: DIODE ZENER 8.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
на замовлення 2780 шт:
термін постачання 21-31 дні (днів)
25+12.21 грн
37+ 8.01 грн
100+ 4.34 грн
500+ 3.19 грн
1000+ 2.22 грн
2000+ 1.84 грн
Мінімальне замовлення: 25
MT9M114EBLSTCZ-CR1 MT9M114EBLSTCZ-CR1 onsemi mt9m114-d.pdf Description: SENSOR IMAGE 1MP CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 3.1V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
1+592.12 грн
10+ 456.15 грн
25+ 421.91 грн
80+ 342.43 грн
MT9M114EBLSTCZH3-GEVB MT9M114EBLSTCZH3-GEVB onsemi mt9m114-d.pdf Description: BOARD EVAL 1 MP 1/6 SOC CIS COLO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
товар відсутній
MT9M114EBLSTCZDH-GEVB MT9M114EBLSTCZDH-GEVB onsemi mt9m114-d.pdf Description: BOARD EVAL HIGH-SPEED CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
товар відсутній
1N4933GP 1N4933GP onsemi 1N4933GP - 37GP.pdf Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N4933 1N4933 onsemi 1N4933-4937.pdf Description: DIODE FAST DO41 50V 200NS 150C
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
NVMFS5C442NWFET1G NVMFS5C442NWFET1G onsemi nvmfs5c442n-d.pdf Description: T6-40V N 2.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMFS5C442NWFET1G NVMFS5C442NWFET1G onsemi nvmfs5c442n-d.pdf Description: T6-40V N 2.3 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1488 шт:
термін постачання 21-31 дні (днів)
3+140.4 грн
10+ 112.79 грн
100+ 89.75 грн
500+ 71.27 грн
Мінімальне замовлення: 3
NVMFS5C442NWFAFT3G NVMFS5C442NWFAFT3G onsemi nvmfs5c442n-d.pdf Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
товар відсутній
2SD1668R 2SD1668R onsemi Description: Power Bipolar Transistor, 7A, 50
Packaging: Bulk
на замовлення 1182 шт:
термін постачання 21-31 дні (днів)
533+39.45 грн
Мінімальне замовлення: 533
MC10181L MC10181L onsemi ONSMD00001-393.pdf?t.download=true&u=5oefqw Description: ARITHMETIC LOGIC UNIT, 10K SERIE
Packaging: Bulk
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
19+1141.67 грн
Мінімальне замовлення: 19
74F381PC 74F381PC onsemi 74F381.pdf Description: IC ARITHMETIC LOGIC 4BIT 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Arithmetic Logic Unit
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 4.5V ~ 5.5V
Supplier Device Package: 20-PDIP
товар відсутній
MMBT2222AT MMBT2222AT onsemi mmbt2222att1-d.pdf Description: TRANS NPN 40V 0.6A SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
товар відсутній
MMBT2222AT MMBT2222AT onsemi mmbt2222att1-d.pdf Description: TRANS NPN 40V 0.6A SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
товар відсутній
NTTFS080N10GTAG NTTFS080N10GTAG onsemi nttfs080n10g-d.pdf Description: 100V MVSOA IN U8FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
на замовлення 10460 шт:
термін постачання 21-31 дні (днів)
6+57.23 грн
10+ 47.76 грн
100+ 33.04 грн
500+ 25.91 грн
Мінімальне замовлення: 6
MC14528BCPG MC14528BCPG onsemi MC14528B-Rev7.pdf Description: IC MULTIVIBRATOR 90NS 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 90 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Voltage - Supply: 3 V ~ 18 V
на замовлення 2414 шт:
термін постачання 21-31 дні (днів)
26+859.8 грн
Мінімальне замовлення: 26
KA3842BDTF KA3842BDTF onsemi KA3842B-45B.pdf Description: IC OFFLINE SWITCH 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 97%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 14-SOIC
Voltage - Start Up: 16 V
Control Features: Frequency Control
товар відсутній
CAT1025LI-25-A2 CAT1025LI-25-A2 onsemi CATSS00774-1.pdf?t.download=true&u=5oefqw Description: CAT1025 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V, 2.7V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
на замовлення 1553 шт:
термін постачання 21-31 дні (днів)
606+35.23 грн
Мінімальне замовлення: 606
FGH40N60SMDF-F085 FGH40N60SMDF-F085 onsemi Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 1.3mJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 122 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
EMI8141MUTAG EMI8141MUTAG onsemi emi8141-d.pdf Description: CMC 100MA 2LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
на замовлення 30307 шт:
термін постачання 21-31 дні (днів)
5+65.62 грн
10+ 56.06 грн
25+ 53.23 грн
100+ 38.35 грн
250+ 33.9 грн
500+ 32.11 грн
1000+ 24.57 грн
Мінімальне замовлення: 5
6N136TSR2VM 6N136TSR2VM onsemi hcpl2530m-d.pdf Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товар відсутній
6N136TSR2VM 6N136TSR2VM onsemi hcpl2530m-d.pdf Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товар відсутній
6N136VM 6N136VM onsemi hcpl2530m-d.pdf Description: OPTOISO 5KV TRANS W/BASE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товар відсутній
MC78M08CDTXM MC78M08CDTXM onsemi MC78Mxx.pdf Description: IC REG LINEAR 8V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D-Pak
Voltage - Output (Min/Fixed): 8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
товар відсутній
HGTG40N60A4 HGTG40N60A4 onsemi hgtg40n60a4-d.pdf Description: IGBT 600V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/145ns
Switching Energy: 400µJ (on), 370µJ (off)
Test Condition: 390V, 40A, 2.2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 625 W
товар відсутній
MMBT4403K MMBT4403K.pdf
MMBT4403K
Виробник: onsemi
Description: TRANS PNP 40V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
товар відсутній
FSBB15CH60 FSBB15CH60.pdf
FSBB15CH60
Виробник: onsemi
Description: SMART POWER MODULE 15A SPM27-CA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товар відсутній
FSBB15CH60F fsbb15ch60f-d.pdf
FSBB15CH60F
Виробник: onsemi
Description: MODULE SPM 600V SPM27-CA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
товар відсутній
BZX85C4V7 FAIRS45281-1.pdf?t.download=true&u=5oefqw
BZX85C4V7
Виробник: onsemi
Description: ZENER DIODE, 4.7V, 5%, 1W, UNIDI
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 48117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8876+2.11 грн
Мінімальне замовлення: 8876
MMBZ5234BLT1G mmbz5221blt1-d.pdf
MMBZ5234BLT1G
Виробник: onsemi
Description: DIODE ZENER 6.2V 225MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
на замовлення 49693 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
31+9.92 грн
45+ 6.61 грн
100+ 3.54 грн
500+ 2.61 грн
1000+ 1.81 грн
Мінімальне замовлення: 31
NXH160T120L2Q1SG nxh160t120l2q1-d.pdf
NXH160T120L2Q1SG
Виробник: onsemi
Description: PIM Q1 SPLIT T-TYPE NPC 160A 120
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 160A
NTC Thermistor: Yes
Supplier Device Package: 30-PIM (71x37.4)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 280 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 38164 pF @ 25 V
на замовлення 372 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6489.68 грн
21+ 5705.38 грн
42+ 5443.29 грн
84+ 4843.44 грн
BAS16LT1 description bas16lt1-d.pdf
BAS16LT1
Виробник: onsemi
Description: DIODE SWITCH 200MA 75V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
SMSZ1010T1G VjnoTaA3sPnQitdFze0QlQ
Виробник: onsemi
Description: SMSZ1010 - TRANSIENT VOLTAGE SUP
Packaging: Bulk
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11539+2.09 грн
Мінімальне замовлення: 11539
LM78L12ACZ MC78LxxAx%2CLM78LXXA.pdf
LM78L12ACZ
Виробник: onsemi
Description: IC REG LINEAR 12V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 12V
PSRR: 65dB (120Hz)
Protection Features: Over Temperature, Short Circuit
товар відсутній
NSVG3109SG6T1G NSVG3109SG6-D.PDF
NSVG3109SG6T1G
Виробник: onsemi
Description: IC AMP GPS 100MHZ-3.6GHZ SC88FL
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3.6GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3V
Gain: 27dB
Current - Supply: 16mA
Noise Figure: 4.3dB
P1dB: 6.4dBm
Test Frequency: 1GHz
Supplier Device Package: SC-88FL/MCPH6
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4608 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+43.49 грн
10+ 36.67 грн
25+ 34.45 грн
100+ 24.52 грн
250+ 20.87 грн
500+ 19.82 грн
1000+ 14.88 грн
Мінімальне замовлення: 8
NTBL045N065SC1 ntbl045n065sc1-d.pdf
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
на замовлення 1964 шт:
термін постачання 21-31 дні (днів)
NTBL045N065SC1 ntbl045n065sc1-d.pdf
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
на замовлення 1964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+938.54 грн
10+ 796.21 грн
100+ 688.59 грн
500+ 585.64 грн
1000+ 537.17 грн
NTMT045N065SC1 ntmt045n065sc1-d.pdf
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
товар відсутній
NTMT045N065SC1 ntmt045n065sc1-d.pdf
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - 3
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1173.56 грн
10+ 995.56 грн
100+ 861.07 грн
500+ 732.32 грн
NVH4L045N065SC1 nvh4l045n065sc1-d.pdf
NVH4L045N065SC1
Виробник: onsemi
Description: SIC MOS TO247-4L 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
товар відсутній
NLV74HC259ADTR2G mc74hc259a-d.pdf
NLV74HC259ADTR2G
Виробник: onsemi
Description: IC MULTIPLEXER 8INPUT 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NLV74HC259ADTR2G mc74hc259a-d.pdf
NLV74HC259ADTR2G
Виробник: onsemi
Description: IC MULTIPLEXER 8INPUT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Delay Time - Propagation: 25ns
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
FPF1321UCX fpf1321-d.pdf
FPF1321UCX
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+41.81 грн
6000+ 38.75 грн
Мінімальне замовлення: 3000
FPF1321UCX fpf1321-d.pdf
FPF1321UCX
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 2:1 6WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 42mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 2:1
Supplier Device Package: 6-WLCSP (0.96x1.66)
Fault Protection: Reverse Current
на замовлення 14036 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+103.77 грн
10+ 89.28 грн
25+ 84.74 грн
100+ 61.07 грн
250+ 53.97 грн
500+ 51.13 грн
1000+ 39.12 грн
Мінімальне замовлення: 3
SNSS30201MR6T1G NSS30201MR6T1G-D.PDF
SNSS30201MR6T1G
Виробник: onsemi
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+4.96 грн
6000+ 4.7 грн
Мінімальне замовлення: 3000
SNSS30201MR6T1G NSS30201MR6T1G-D.PDF
SNSS30201MR6T1G
Виробник: onsemi
Description: TRANS NPN 30V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 535 mW
на замовлення 98990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.05 грн
14+ 21.82 грн
100+ 11.01 грн
500+ 9.15 грн
1000+ 7.12 грн
Мінімальне замовлення: 10
NSS20201MR6T1G nss20201mr6t1g.pdf
NSS20201MR6T1G
Виробник: onsemi
Description: TRANS NPN 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.2 грн
10+ 34.61 грн
100+ 23.95 грн
500+ 18.78 грн
1000+ 15.98 грн
Мінімальне замовлення: 8
FQPF9N25C fqpf9n25c-d.pdf
FQPF9N25C
Виробник: onsemi
Description: MOSFET N-CH 250V 8.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товар відсутній
FQPF9N25C FAIRS46329-1.pdf?t.download=true&u=5oefqw
FQPF9N25C
Виробник: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 8
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товар відсутній
NTMFS020N06CT1G ntmfs020n06c-d.pdf
NTMFS020N06CT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
товар відсутній
NTMFS020N06CT1G ntmfs020n06c-d.pdf
NTMFS020N06CT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+47.31 грн
10+ 39.02 грн
100+ 26.97 грн
500+ 21.15 грн
Мінімальне замовлення: 7
NVTYS010N06CLTWG nvtys010n06cl-d.pdf
NVTYS010N06CLTWG
Виробник: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 25A, 10V
Power Dissipation (Max): 3.1W (Ta), 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+68.67 грн
10+ 54.23 грн
100+ 42.14 грн
500+ 33.52 грн
1000+ 27.31 грн
Мінімальне замовлення: 5
NTNS4CS69NTCG
NTNS4CS69NTCG
Виробник: onsemi
Description: NTNS4CS69NTCG - TRENCH 6 30V NFE
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 3457078 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3957+5.79 грн
Мінімальне замовлення: 3957
4MN10CH-TL-E
4MN10CH-TL-E
Виробник: onsemi
Description: BIP NPN 0.1A 200V
Packaging: Bulk
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: NPN
Power - Max: 600mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 200V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 400MHz
Supplier Device Package: 3-CPH
на замовлення 38970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2049+10.86 грн
Мінімальне замовлення: 2049
SZESD7104MTWTAG esd7104-d.pdf
SZESD7104MTWTAG
Виробник: onsemi
Description: BI-DIRECTIONAL 4 LINE TVS
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WDFNW (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.28 грн
13+ 23.15 грн
100+ 13.89 грн
500+ 12.07 грн
1000+ 8.21 грн
Мінімальне замовлення: 10
NSBC123JPDP6T5G dtc123jp-d.pdf
NSBC123JPDP6T5G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+4.63 грн
16000+ 3.86 грн
24000+ 3.79 грн
56000+ 2.94 грн
Мінімальне замовлення: 8000
NSBC123JPDP6T5G dtc123jp-d.pdf
NSBC123JPDP6T5G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.71 грн
17+ 18.15 грн
100+ 9.16 грн
500+ 7.02 грн
1000+ 5.21 грн
2000+ 4.38 грн
Мінімальне замовлення: 12
LA6339ML-TE-L-E
Виробник: onsemi
Description: COMPARATORS
Packaging: Bulk
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2049+10.86 грн
Мінімальне замовлення: 2049
NSBC144EDP6T5G dtc144ed-d.pdf
NSBC144EDP6T5G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
товар відсутній
NSBC144EDP6T5G dtc144ed-d.pdf
NSBC144EDP6T5G
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-963
на замовлення 6762 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.71 грн
17+ 18.15 грн
100+ 9.16 грн
500+ 7.02 грн
1000+ 5.21 грн
2000+ 4.38 грн
Мінімальне замовлення: 12
1N5238B 1n5221b-d.pdf
1N5238B
Виробник: onsemi
Description: DIODE ZENER 8.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
на замовлення 2780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+12.21 грн
37+ 8.01 грн
100+ 4.34 грн
500+ 3.19 грн
1000+ 2.22 грн
2000+ 1.84 грн
Мінімальне замовлення: 25
MT9M114EBLSTCZ-CR1 mt9m114-d.pdf
MT9M114EBLSTCZ-CR1
Виробник: onsemi
Description: SENSOR IMAGE 1MP CMOS 55ODCSP
Packaging: Tray
Package / Case: 55-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 3.1V
Pixel Size: 1.9µm x 1.9µm
Active Pixel Array: 1296H x 976V
Supplier Device Package: 55-ODCSP (4.65x3.85)
Frames per Second: 120.0
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+592.12 грн
10+ 456.15 грн
25+ 421.91 грн
80+ 342.43 грн
MT9M114EBLSTCZH3-GEVB mt9m114-d.pdf
MT9M114EBLSTCZH3-GEVB
Виробник: onsemi
Description: BOARD EVAL 1 MP 1/6 SOC CIS COLO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
товар відсутній
MT9M114EBLSTCZDH-GEVB mt9m114-d.pdf
MT9M114EBLSTCZDH-GEVB
Виробник: onsemi
Description: BOARD EVAL HIGH-SPEED CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: MT9M114
Supplied Contents: Board(s)
товар відсутній
1N4933GP 1N4933GP - 37GP.pdf
1N4933GP
Виробник: onsemi
Description: DIODE GEN PURP 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
1N4933 1N4933-4937.pdf
1N4933
Виробник: onsemi
Description: DIODE FAST DO41 50V 200NS 150C
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товар відсутній
NVMFS5C442NWFET1G nvmfs5c442n-d.pdf
NVMFS5C442NWFET1G
Виробник: onsemi
Description: T6-40V N 2.3 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMFS5C442NWFET1G nvmfs5c442n-d.pdf
NVMFS5C442NWFET1G
Виробник: onsemi
Description: T6-40V N 2.3 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+140.4 грн
10+ 112.79 грн
100+ 89.75 грн
500+ 71.27 грн
Мінімальне замовлення: 3
NVMFS5C442NWFAFT3G nvmfs5c442n-d.pdf
NVMFS5C442NWFAFT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
товар відсутній
2SD1668R
2SD1668R
Виробник: onsemi
Description: Power Bipolar Transistor, 7A, 50
Packaging: Bulk
на замовлення 1182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
533+39.45 грн
Мінімальне замовлення: 533
MC10181L ONSMD00001-393.pdf?t.download=true&u=5oefqw
MC10181L
Виробник: onsemi
Description: ARITHMETIC LOGIC UNIT, 10K SERIE
Packaging: Bulk
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
19+1141.67 грн
Мінімальне замовлення: 19
74F381PC 74F381.pdf
74F381PC
Виробник: onsemi
Description: IC ARITHMETIC LOGIC 4BIT 20-DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Arithmetic Logic Unit
Operating Temperature: 0°C ~ 70°C
Supply Voltage: 4.5V ~ 5.5V
Supplier Device Package: 20-PDIP
товар відсутній
MMBT2222AT mmbt2222att1-d.pdf
MMBT2222AT
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
товар відсутній
MMBT2222AT mmbt2222att1-d.pdf
MMBT2222AT
Виробник: onsemi
Description: TRANS NPN 40V 0.6A SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
товар відсутній
NTTFS080N10GTAG nttfs080n10g-d.pdf
NTTFS080N10GTAG
Виробник: onsemi
Description: 100V MVSOA IN U8FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
на замовлення 10460 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+57.23 грн
10+ 47.76 грн
100+ 33.04 грн
500+ 25.91 грн
Мінімальне замовлення: 6
MC14528BCPG MC14528B-Rev7.pdf
MC14528BCPG
Виробник: onsemi
Description: IC MULTIVIBRATOR 90NS 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 90 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: No
Supplier Device Package: 16-PDIP
Voltage - Supply: 3 V ~ 18 V
на замовлення 2414 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
26+859.8 грн
Мінімальне замовлення: 26
KA3842BDTF KA3842B-45B.pdf
KA3842BDTF
Виробник: onsemi
Description: IC OFFLINE SWITCH 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 97%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 12V ~ 25V
Supplier Device Package: 14-SOIC
Voltage - Start Up: 16 V
Control Features: Frequency Control
товар відсутній
CAT1025LI-25-A2 CATSS00774-1.pdf?t.download=true&u=5oefqw
CAT1025LI-25-A2
Виробник: onsemi
Description: CAT1025 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V, 2.7V
Supplier Device Package: 8-PDIP
DigiKey Programmable: Not Verified
на замовлення 1553 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
606+35.23 грн
Мінімальне замовлення: 606
FGH40N60SMDF-F085
FGH40N60SMDF-F085
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/110ns
Switching Energy: 1.3mJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 122 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
EMI8141MUTAG emi8141-d.pdf
EMI8141MUTAG
Виробник: onsemi
Description: CMC 100MA 2LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
на замовлення 30307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+65.62 грн
10+ 56.06 грн
25+ 53.23 грн
100+ 38.35 грн
250+ 33.9 грн
500+ 32.11 грн
1000+ 24.57 грн
Мінімальне замовлення: 5
6N136TSR2VM hcpl2530m-d.pdf
6N136TSR2VM
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товар відсутній
6N136TSR2VM hcpl2530m-d.pdf
6N136TSR2VM
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8SMT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товар відсутній
6N136VM hcpl2530m-d.pdf
6N136VM
Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
товар відсутній
MC78M08CDTXM MC78Mxx.pdf
MC78M08CDTXM
Виробник: onsemi
Description: IC REG LINEAR 8V 500MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: D-Pak
Voltage - Output (Min/Fixed): 8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
товар відсутній
HGTG40N60A4 hgtg40n60a4-d.pdf
HGTG40N60A4
Виробник: onsemi
Description: IGBT 600V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/145ns
Switching Energy: 400µJ (on), 370µJ (off)
Test Condition: 390V, 40A, 2.2Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 625 W
товар відсутній
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