| Фото | Назва | Виробник | Інформація |
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NTMYS6D2N06CLTWG | onsemi |
 Description: MOSFET N-CH 60V 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Supplier Device Package: LFPAK4 (5x6) Drain to Source Voltage (Vdss): 60 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMYS2D2N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 31A/185A LFPAK4 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V |
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NTMYS2D2N06CLTWG | onsemi |
Description: MOSFET N-CH 60V 31A/185A LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 134W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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NVMYS022N06CTWG | onsemi |
Description: T6 60V SL LFPAK4 5X6 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) |
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1N916A | onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
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NVMFS5C677NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 11A/36A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C677NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 11A/36A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 25µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2993 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H852NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 11A/42A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Qualification: AEC-Q101 |
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NVMFS6H852NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 11A/42A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1386 шт: термін постачання 21-31 дні (днів) |
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NVMFS5H610NLWFT1G | onsemi |
Description: T8 60V LOW COSS Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V Power Dissipation (Max): 3.6W (Tc), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V Qualification: AEC-Q101 |
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NVMFS5H610NLWFT1G | onsemi |
Description: T8 60V LOW COSS Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V Power Dissipation (Max): 3.6W (Tc), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V Qualification: AEC-Q101 |
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NVMFS6H852NWFT1G | onsemi |
Description: MOSFET N-CH 80V 10A/40A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H852NWFT1G | onsemi |
Description: MOSFET N-CH 80V 10A/40A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H836NWFT3G | onsemi |
Description: T8 80V SO8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H836NWFT3G | onsemi |
Description: T8 80V SO8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C680NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 8.1A/21A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.4W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C680NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 8.1A/21A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V Power Dissipation (Max): 3.4W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C468NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 37A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Qualification: AEC-Q101 |
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NVMFS5C468NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 37A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1235 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H848NWFT1G | onsemi |
Description: MOSFET N-CH 80V 13A/57A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H848NWFT1G | onsemi |
Description: MOSFET N-CH 80V 13A/57A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 70µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C466NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 16A/52A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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NVMFS5C466NLWFT1G | onsemi |
Description: MOSFET N-CH 40V 16A/52A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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NVMFS6H836NWFT1G | onsemi |
Description: MOSFET N-CH 80V 15A/74A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H836NWFT1G | onsemi |
Description: MOSFET N-CH 80V 15A/74A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V Power Dissipation (Max): 3.7W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NCP1075BBP065G | onsemi |
Description: ENHANCED OFF LINE SWITCHER FOR R Packaging: Bulk |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NCP1075BBP100G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 8-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Power (Watts): 14 W |
на замовлення 1095 шт: термін постачання 21-31 дні (днів) |
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NCP1075BBP130G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 130kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 8-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Power (Watts): 14 W |
на замовлення 12600 шт: термін постачання 21-31 дні (днів) |
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HCPL0701V | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 500% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 18V Turn On / Turn Off Time (Typ): 300ns, 1.6µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HCPL0700 | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 1µs, 7µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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HCPL0700V | onsemi |
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Current Transfer Ratio (Max): 2600% @ 1.6mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 7V Turn On / Turn Off Time (Typ): 1µs, 7µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C410NLT3G | onsemi |
Description: MOSFET N-CH 40V 46A/302A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 302A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C410NLT3G | onsemi |
Description: MOSFET N-CH 40V 46A/302A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 302A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MC3302P | onsemi |
Description: IC COMP QUAD SINGLE SUPPLY 14DIP Packaging: Tube |
товар відсутній |
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MC3302DR2 | onsemi |
Description: IC COMPARATOR QUAD SNGL 14-SOIC Packaging: Tape & Reel (TR) |
товар відсутній |
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CAT5114ZD7I00GT3 | onsemi |
Description: IC POT DIGITAL 100K 32TAP 8TDFN Packaging: Tape & Reel (TR) Resistance (Ohms): 100k Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TDFN (2.0x2.5) Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114LI-10-G | onsemi |
Description: IC DGTL POT 10KOHM 32TAP 8DIP Resistance (Ohms): 10k Tolerance: ±20% Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 29603 шт: термін постачання 21-31 дні (днів) |
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CAT5114LI-10-G | onsemi |
Description: IC DGTL POT 10KOHM 32TAP 8DIP Resistance (Ohms): 10k Tolerance: ±20% Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114VI-10-G | onsemi |
Description: IC POT DGTL 32TAP 8-SOIC Resistance (Ohms): 10k Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-SOIC Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114VI-00-GT3 | onsemi |
Description: IC DGTL POT 100KOHM 32TAP 8SOIC Resistance (Ohms): 100k Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-SOIC Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114ZI-00-GT3 | onsemi |
Description: IC DGTL POT 100KOHM 32TAP 8MSOP Resistance (Ohms): 100k Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-MSOP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114VP2I50GT3 | onsemi |
Description: IC DGTL POT 50KOHM 32TAP 8TDFN Resistance (Ohms): 50k Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TDFN (2x3) Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114VP2I00GT3 | onsemi |
Description: IC DGTL POT 100KOHM 32TAP 8TDFN Resistance (Ohms): 100k Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TDFN (2x3) Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114YI-50-G | onsemi |
Description: IC POT DPP NV 32TAP U/D 8TSSOP Resistance (Ohms): 50k Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TSSOP Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 33100 шт: термін постачання 21-31 дні (днів) |
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CAT5114YI-50-G | onsemi |
Description: IC POT DPP NV 32TAP U/D 8TSSOP Resistance (Ohms): 50k Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TSSOP Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114YI-10-G | onsemi |
Description: IC POT DPP NV 32TAP U/D 8TSSOP Resistance (Ohms): 10k Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TSSOP Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114YI-00-G | onsemi |
Description: IC POT DPP NV 32TAP U/D 8TSSOP Resistance (Ohms): 100k Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TSSOP Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114LI-00-G | onsemi |
Description: IC DGTL POT 100KOHM 32TAP 8DIP Resistance (Ohms): 100k Tolerance: ±20% Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 31400 шт: термін постачання 21-31 дні (днів) |
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CAT5114LI-00-G | onsemi |
Description: IC DGTL POT 100KOHM 32TAP 8DIP Resistance (Ohms): 100k Tolerance: ±20% Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114LI-50-G | onsemi |
Description: IC DGTL POT 50KOHM 32TAP 8DIP Resistance (Ohms): 50k Tolerance: ±20% Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 33294 шт: термін постачання 21-31 дні (днів) |
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CAT5114LI-50-G | onsemi |
Description: IC DGTL POT 50KOHM 32TAP 8DIP Resistance (Ohms): 50k Tolerance: ±20% Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-PDIP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5114VP2I10GT3 | onsemi |
Description: IC DGTL POT 10KOHM 32TAP 8TDFN Resistance (Ohms): 10k Tolerance: ±20% Packaging: Bulk Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TDFN (2x3) Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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CAT5114YI-00-GT3 | onsemi |
Description: IC DGTL POT 100KOHM 32TAP 8TSSOP Resistance (Ohms): 100k Tolerance: ±20% Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TSSOP Resistance - Wiper (Ohms) (Typ): 150 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CAT5114ZI-00-G | onsemi |
Description: IC DGTL POT INTERFACE 8MSOP Resistance (Ohms): 100k Tolerance: ±20% Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 384 шт: термін постачання 21-31 дні (днів) |
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CAT5114ZI-50-G | onsemi |
Description: IC DGTL POT INTERFACE 8MSOP Resistance (Ohms): 50k Tolerance: ±20% Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 32 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-MSOP Resistance - Wiper (Ohms) (Typ): 70 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 1275 шт: термін постачання 21-31 дні (днів) |
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| CAT5114ZI-00-MP | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товар відсутній |
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| CAT5114VI-10GTQJ | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товар відсутній |
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| CAT5114VI-10-GQJ | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товар відсутній |
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| CAT5114ZI-00-GMP | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товар відсутній |
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| CAT5114VI-50-QJ | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товар відсутній |
| NTMYS6D2N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Supplier Device Package: LFPAK4 (5x6)
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Supplier Device Package: LFPAK4 (5x6)
Drain to Source Voltage (Vdss): 60 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.98 грн |
| 10+ | 115.88 грн |
| 100+ | 92.19 грн |
| 500+ | 73.21 грн |
| 1000+ | 62.12 грн |
| NTMYS2D2N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 31A/185A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Description: MOSFET N-CH 60V 31A/185A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
товар відсутній
| NTMYS2D2N06CLTWG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 31A/185A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Description: MOSFET N-CH 60V 31A/185A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.58 грн |
| 10+ | 157.1 грн |
| 100+ | 127.07 грн |
| 500+ | 106.01 грн |
| 1000+ | 90.77 грн |
| NVMYS022N06CTWG |
Виробник: onsemi
Description: T6 60V SL LFPAK4 5X6
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
Description: T6 60V SL LFPAK4 5X6
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
товар відсутній
| 1N916A |
|
Виробник: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
| NVMFS5C677NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 11A/36A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 11A/36A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 48.46 грн |
| NVMFS5C677NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 11A/36A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 11A/36A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2993 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.88 грн |
| 10+ | 86.92 грн |
| 100+ | 67.59 грн |
| 500+ | 53.77 грн |
| NVMFS6H852NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
товар відсутній
| NVMFS6H852NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 11A/42A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1386 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.62 грн |
| 10+ | 51.51 грн |
| 100+ | 40.1 грн |
| 500+ | 31.9 грн |
| NVMFS5H610NLWFT1G |
|
Виробник: onsemi
Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Power Dissipation (Max): 3.6W (Tc), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
Qualification: AEC-Q101
Description: T8 60V LOW COSS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Power Dissipation (Max): 3.6W (Tc), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
| NVMFS5H610NLWFT1G |
|
Виробник: onsemi
Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Power Dissipation (Max): 3.6W (Tc), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
Qualification: AEC-Q101
Description: T8 60V LOW COSS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V
Power Dissipation (Max): 3.6W (Tc), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V
Qualification: AEC-Q101
товар відсутній
| NVMFS6H852NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 36.91 грн |
| NVMFS6H852NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.93 грн |
| 10+ | 66.2 грн |
| 100+ | 51.48 грн |
| 500+ | 40.95 грн |
| NVMFS6H836NWFT3G |
|
Виробник: onsemi
Description: T8 80V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 41.29 грн |
| 10000+ | 37.93 грн |
| NVMFS6H836NWFT3G |
|
Виробник: onsemi
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.3 грн |
| 10+ | 82.59 грн |
| 100+ | 64.23 грн |
| 500+ | 51.1 грн |
| 1000+ | 41.62 грн |
| 2000+ | 39.18 грн |
| NVMFS5C680NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 8.1A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8.1A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 42.29 грн |
| NVMFS5C680NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 8.1A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8.1A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.4W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.14 грн |
| 10+ | 75.83 грн |
| 100+ | 58.98 грн |
| 500+ | 46.92 грн |
| NVMFS5C468NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 37A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
| NVMFS5C468NLWFAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 37A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.59 грн |
| 10+ | 84.79 грн |
| 100+ | 65.95 грн |
| 500+ | 52.46 грн |
| NVMFS6H848NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 13A/57A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 13A/57A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 45.42 грн |
| NVMFS6H848NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 13A/57A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 13A/57A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.77 грн |
| 10+ | 81.49 грн |
| 100+ | 63.35 грн |
| 500+ | 50.39 грн |
| NVMFS5C466NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 16A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 40V 16A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
| NVMFS5C466NLWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 16A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 40V 16A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
| NVMFS6H836NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 15A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 15A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 46.06 грн |
| NVMFS6H836NWFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 15A/74A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 15A/74A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.3 грн |
| 10+ | 82.59 грн |
| 100+ | 64.23 грн |
| 500+ | 51.1 грн |
| NCP1075BBP065G |
|
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 413+ | 52.15 грн |
| NCP1075BBP100G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 14 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 14 W
на замовлення 1095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 413+ | 52.15 грн |
| NCP1075BBP130G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 14 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Power (Watts): 14 W
на замовлення 12600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 413+ | 52.15 грн |
| HCPL0701V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 18V
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.23 грн |
| 10+ | 158.57 грн |
| 100+ | 122.04 грн |
| 500+ | 103.53 грн |
| 1000+ | 88.97 грн |
| 3000+ | 84.12 грн |
| 6000+ | 80.83 грн |
| HCPL0700 |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 32 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.15 грн |
| HCPL0700V |
|
Виробник: onsemi
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOCOUPLER SGL DARL OUT 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): 2600% @ 1.6mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 1µs, 7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.15 грн |
| 10+ | 127.93 грн |
| 100+ | 98.45 грн |
| 500+ | 83.51 грн |
| 1000+ | 71.77 грн |
| 3000+ | 67.85 грн |
| NTMFS5C410NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 46A/302A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Description: MOSFET N-CH 40V 46A/302A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 279.46 грн |
| NTMFS5C410NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 46A/302A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Description: MOSFET N-CH 40V 46A/302A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 302A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 537.95 грн |
| 10+ | 443.59 грн |
| 100+ | 369.65 грн |
| 500+ | 306.09 грн |
| 1000+ | 275.48 грн |
| 2000+ | 258.13 грн |
| CAT5114ZD7I00GT3 |
|
Виробник: onsemi
Description: IC POT DIGITAL 100K 32TAP 8TDFN
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2.0x2.5)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC POT DIGITAL 100K 32TAP 8TDFN
Packaging: Tape & Reel (TR)
Resistance (Ohms): 100k
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2.0x2.5)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114LI-10-G |
|
Виробник: onsemi
Description: IC DGTL POT 10KOHM 32TAP 8DIP
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 10KOHM 32TAP 8DIP
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 29603 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 243+ | 89.56 грн |
| CAT5114LI-10-G |
|
Виробник: onsemi
Description: IC DGTL POT 10KOHM 32TAP 8DIP
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 10KOHM 32TAP 8DIP
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114VI-10-G |
Виробник: onsemi
Description: IC POT DGTL 32TAP 8-SOIC
Resistance (Ohms): 10k
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC POT DGTL 32TAP 8-SOIC
Resistance (Ohms): 10k
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114VI-00-GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 100KOHM 32TAP 8SOIC
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 100KOHM 32TAP 8SOIC
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-SOIC
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114ZI-00-GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 100KOHM 32TAP 8MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 100KOHM 32TAP 8MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114VP2I50GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 50KOHM 32TAP 8TDFN
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2x3)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 50KOHM 32TAP 8TDFN
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2x3)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114VP2I00GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 100KOHM 32TAP 8TDFN
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2x3)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 100KOHM 32TAP 8TDFN
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2x3)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114YI-50-G |
|
Виробник: onsemi
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 50k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 50k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 33100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 139+ | 156.72 грн |
| CAT5114YI-50-G |
|
Виробник: onsemi
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 50k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 50k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114YI-10-G |
|
Виробник: onsemi
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 10k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 10k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114YI-00-G |
|
Виробник: onsemi
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 100k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC POT DPP NV 32TAP U/D 8TSSOP
Resistance (Ohms): 100k
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114LI-00-G |
|
Виробник: onsemi
Description: IC DGTL POT 100KOHM 32TAP 8DIP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 100KOHM 32TAP 8DIP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 31400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 243+ | 89.56 грн |
| CAT5114LI-00-G |
|
Виробник: onsemi
Description: IC DGTL POT 100KOHM 32TAP 8DIP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 100KOHM 32TAP 8DIP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114LI-50-G |
|
Виробник: onsemi
Description: IC DGTL POT 50KOHM 32TAP 8DIP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 50KOHM 32TAP 8DIP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 33294 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 243+ | 89.56 грн |
| CAT5114LI-50-G |
|
Виробник: onsemi
Description: IC DGTL POT 50KOHM 32TAP 8DIP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 50KOHM 32TAP 8DIP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-PDIP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CAT5114VP2I10GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 10KOHM 32TAP 8TDFN
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2x3)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 10KOHM 32TAP 8TDFN
Resistance (Ohms): 10k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TDFN (2x3)
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 238+ | 91 грн |
| CAT5114YI-00-GT3 |
|
Виробник: onsemi
Description: IC DGTL POT 100KOHM 32TAP 8TSSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT 100KOHM 32TAP 8TSSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Resistance - Wiper (Ohms) (Typ): 150
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 247+ | 88.11 грн |
| CAT5114ZI-00-G |
|
Виробник: onsemi
Description: IC DGTL POT INTERFACE 8MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT INTERFACE 8MSOP
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 247+ | 88.11 грн |
| CAT5114ZI-50-G |
|
Виробник: onsemi
Description: IC DGTL POT INTERFACE 8MSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC DGTL POT INTERFACE 8MSOP
Resistance (Ohms): 50k
Tolerance: ±20%
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 32
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 70
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1275 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 238+ | 91 грн |
| CAT5114ZI-00-MP |
товар відсутній
| CAT5114VI-10GTQJ |
товар відсутній
| CAT5114VI-10-GQJ |
товар відсутній
| CAT5114ZI-00-GMP |
товар відсутній
| CAT5114VI-50-QJ |
товар відсутній