Продукція > BXT
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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BXT030N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 59A Pulsed drain current: 360A Power dissipation: 44.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT030N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 59A Pulsed drain current: 360A Power dissipation: 44.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
BXT033N03D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT040N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT040N03C | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
BXT040P04M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT047N03E | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; PDFN33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Case: PDFN33 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
BXT047N03E | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; PDFN33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Case: PDFN33 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT060N03B | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT070N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT071N04E | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 140A; 42W; PDFN33 Mounting: SMD Case: PDFN33 Kind of package: reel; tape Power dissipation: 42W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 8mΩ Drain current: 23A Drain-source voltage: 40V Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 140A | товар відсутній | |||||||||||||||||
BXT071N04E | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 140A; 42W; PDFN33 Mounting: SMD Case: PDFN33 Kind of package: reel; tape Power dissipation: 42W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 8mΩ Drain current: 23A Drain-source voltage: 40V Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 140A кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
BXT080N03E | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT090N06B | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 68A Power dissipation: 4.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
BXT090N06B | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 68A Power dissipation: 4.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT1000N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT1000N06M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Drain-source voltage: 60V Drain current: 2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET | на замовлення 2390 шт: термін постачання 21-30 дні (днів) |
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BXT1000N06M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 5.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 12A Drain-source voltage: 60V Drain current: 2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт | на замовлення 2390 шт: термін постачання 14-21 дні (днів) |
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BXT1000N06N | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT1080P06B | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT1100P02M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Mounting: SMD Kind of channel: enhanced Type of transistor: P-MOSFET Polarisation: unipolar | товар відсутній | |||||||||||||||||
BXT1150N10D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 64A Mounting: SMD Case: TO252 Drain-source voltage: 100V Drain current: 12.8A On-state resistance: 135mΩ кількість в упаковці: 1 шт | на замовлення 4970 шт: термін постачання 14-21 дні (днів) |
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BXT1150N10D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 64A Mounting: SMD Case: TO252 Drain-source voltage: 100V Drain current: 12.8A On-state resistance: 135mΩ | на замовлення 4970 шт: термін постачання 21-30 дні (днів) |
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BXT1150N10J | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Mounting: SMD Case: SOT89-3 Drain-source voltage: 100V Drain current: 5.6A On-state resistance: 135mΩ кількість в упаковці: 1 шт | на замовлення 2839 шт: термін постачання 14-21 дні (днів) |
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BXT1150N10J | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Mounting: SMD Case: SOT89-3 Drain-source voltage: 100V Drain current: 5.6A On-state resistance: 135mΩ | на замовлення 2839 шт: термін постачання 21-30 дні (днів) |
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BXT1700P06M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Mounting: SMD Polarisation: unipolar Case: SOT23-3 Power dissipation: 1.5W Gate charge: 22nC Drain current: -2.8A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.17Ω Pulsed drain current: -16A | на замовлення 6285 шт: термін постачання 21-30 дні (днів) |
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BXT1700P06M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Mounting: SMD Polarisation: unipolar Case: SOT23-3 Power dissipation: 1.5W Gate charge: 22nC Drain current: -2.8A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.17Ω Pulsed drain current: -16A кількість в упаковці: 5 шт | на замовлення 6285 шт: термін постачання 14-21 дні (днів) |
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BXT170N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 200A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
BXT170N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 200A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT2-17TF | Opto Diode Corp | Description: SENSOR PHOTODIO 4100-4300NM TO37 Packaging: Tray Package / Case: TO-37-6 Metal Can Wavelength: 4100nm ~ 4300nm Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Color - Enhanced: Infrared (NIR) Responsivity @ nm: 120 KV/W @ 4100nm Active Area: 1mm² | на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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BXT230P03B | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Mounting: SMD Type of transistor: P-MOSFET Case: SOP8 On-state resistance: 34mΩ Drain current: -7A Drain-source voltage: -30V Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: -40A Power dissipation: 3.9W Kind of package: reel; tape | на замовлення 3264 шт: термін постачання 21-30 дні (днів) |
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BXT230P03B | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Mounting: SMD Type of transistor: P-MOSFET Case: SOP8 On-state resistance: 34mΩ Drain current: -7A Drain-source voltage: -30V Gate charge: 28nC Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Pulsed drain current: -40A Power dissipation: 3.9W Kind of package: reel; tape кількість в упаковці: 1 шт | на замовлення 3264 шт: термін постачання 14-21 дні (днів) |
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BXT250N03B | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT250N03M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT270N02M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 44mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced | на замовлення 7173 шт: термін постачання 21-30 дні (днів) |
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BXT270N02M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 44mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | на замовлення 7173 шт: термін постачання 14-21 дні (днів) |
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BXT2800N10M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.4A Pulsed drain current: 8.8A Power dissipation: 2.8W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced | на замовлення 5215 шт: термін постачання 21-30 дні (днів) |
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BXT2800N10M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.4A Pulsed drain current: 8.8A Power dissipation: 2.8W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | на замовлення 5215 шт: термін постачання 14-21 дні (днів) |
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BXT280N02B | BRIDGELUX | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Pulsed drain current: 24A Power dissipation: 1.6W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 38mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced | на замовлення 3021 шт: термін постачання 21-30 дні (днів) |
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BXT280N02B | BRIDGELUX | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Pulsed drain current: 24A Power dissipation: 1.6W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 38mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | на замовлення 3021 шт: термін постачання 14-21 дні (днів) |
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BXT280N03M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT2N7002BK | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | на замовлення 16100 шт: термін постачання 14-21 дні (днів) |
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BXT2N7002BK | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced | на замовлення 16100 шт: термін постачання 21-30 дні (днів) |
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BXT2S-28T | Opto Diode Corp | Description: SENSOR PHOTODIOD 4300-4500NM TO8 Packaging: Tray Package / Case: TO-8 Style, 6 Leads Wavelength: 4300nm ~ 4500nm Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Color - Enhanced: Infrared (NIR) Responsivity @ nm: 50 KV/W @ 4300nm, 75 KV/W @ 4500nm Active Area: 4mm² | на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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BXT330N02M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT330N03M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT330N03N | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET | товар відсутній | |||||||||||||||||
BXT330N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 80A Power dissipation: 27.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||
BXT330N06D | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 80A Power dissipation: 27.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 24.5nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT330N06D Код товару: 197512 | Транзистори > Польові N-канальні | товар відсутній | ||||||||||||||||||
BXT350P02M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT3800P06M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.2W Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Case: SOT23-3 Drain-source voltage: -60V Drain current: -2.1A On-state resistance: 0.55Ω Type of transistor: P-MOSFET | товар відсутній | |||||||||||||||||
BXT3800P06M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Power dissipation: 1.2W Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Case: SOT23-3 Drain-source voltage: -60V Drain current: -2.1A On-state resistance: 0.55Ω Type of transistor: P-MOSFET кількість в упаковці: 5 шт | товар відсутній | |||||||||||||||||
BXT400N06N | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT420N03M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Type of transistor: N-MOSFET Case: SOT23-3 On-state resistance: 70mΩ Drain current: 2.6A Drain-source voltage: 30V | на замовлення 3540 шт: термін постачання 21-30 дні (днів) |
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BXT420N03M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.7nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Type of transistor: N-MOSFET Case: SOT23-3 On-state resistance: 70mΩ Drain current: 2.6A Drain-source voltage: 30V кількість в упаковці: 1 шт | на замовлення 3540 шт: термін постачання 14-21 дні (днів) |
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BXT500N02M | BRIDGELUX | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced | товар відсутній | |||||||||||||||||
BXT520P02M | BRIDGELUX | BXT520P02M SMD P channel transistors | на замовлення 2700 шт: термін постачання 14-21 дні (днів) |
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BXT55C10-GS08 | VISHAY | на замовлення 2500 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||||
BXT600P03M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: SOT23-3 Drain-source voltage: -30V Drain current: -2.7A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16.4A | на замовлення 1930 шт: термін постачання 21-30 дні (днів) |
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BXT600P03M | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: SOT23-3 Drain-source voltage: -30V Drain current: -2.7A On-state resistance: 85mΩ Type of transistor: P-MOSFET Power dissipation: 1.51W Gate charge: 6.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16.4A кількість в упаковці: 1 шт | на замовлення 1930 шт: термін постачання 14-21 дні (днів) |
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BXT848 | Omron Automation and Safety | Description: DNJ CABLE | товар відсутній | |||||||||||||||||
BXT900P06D | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: TO252 Type of transistor: P-MOSFET Kind of channel: enhanced | на замовлення 1051 шт: термін постачання 21-30 дні (днів) |
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BXT900P06D | BRIDGELUX | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: TO252 Type of transistor: P-MOSFET Kind of channel: enhanced кількість в упаковці: 1 шт | на замовлення 1051 шт: термін постачання 14-21 дні (днів) |
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BXTM-26747-D53 | Knowles | Description: MIC COND ANALOG OMNI -55.5DB | на замовлення 25 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||
BXTM-26747-D53 | Knowles | Microphones MICROPHONE | товар відсутній | |||||||||||||||||
BXTS13A | Intel | Heat Sinks | товар відсутній | |||||||||||||||||
BXTS13A 937425 | Intel | Heat Sinks BOXED THERMAL | товар відсутній | |||||||||||||||||
BXTS13A 937425 | Intel | Thermal Solution BXTS13A, Retail Box | товар відсутній | |||||||||||||||||
BXTS13X | Intel | Heat Sinks | товар відсутній | |||||||||||||||||
BXTS15A | Intel | CPU & Chip Coolers Intel Thermal Solution BXTS15A, Retail Box | на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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BXTSRS1 | Intel | Intel Intel Laminar RS1 Cooler, Bulk | товар відсутній |