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W4693QK050 IXYS media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
товар відсутній
W4693QK080 IXYS media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
товар відсутній
MCMA160P1600YA IXYS media?resourcetype=datasheets&amp;itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+5328.33 грн
MCMA160P1800YA-MI IXYS media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
товар відсутній
DSSK10-018A DSSK10-018A IXYS DSSK10-018A.pdf Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
товар відсутній
CMA80E1400HB IXYS Description: THYRISTOR - TO247
Packaging: Tube
товар відсутній
MTC120WX55GD-SMD IXYS MTC120WX55GD_tent.pdf Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
13+1948.17 грн
Мінімальне замовлення: 13
IRFP470 IRFP470 IXYS IRFP470.pdf Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
IXFP20N60X3 IXYS Description: DISCRETE MOSFET 20A 600V X3 TO22
Packaging: Tube
товар відсутній
DGSK20-025AS-TUB DGSK20-025AS-TUB IXYS DGS,DGSK 9, 10, 20-025A,AS.pdf Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
товар відсутній
IXYH40N120B4H1 IXYS media?resourcetype=datasheets&itemid=7e1d21ef-b20d-41a8-bb73-2c403d23711e&filename=power_semiconductor_discrete_igbt_ixyh40n120b4h1_datasheet.pdf Description: IGBT TRENCH 1200V 112A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+859.95 грн
30+ 670.49 грн
120+ 631.06 грн
510+ 536.71 грн
MDD810-12N2 IXYS media?resourcetype=datasheets&itemid=96f50344-a6b2-47eb-8cd8-997806a5138c&filename=littelfuse_diode_modules_single_and_dual_md_810_1_n2_datasheet.pdf Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
товар відсутній
IXFN140N60X3 IXYS Description: DISCRETE MOSFET 140A 600V X3 SOT
Packaging: Tube
товар відсутній
IXYN110N120C4H1 IXYS media?resourcetype=datasheets&itemid=00e33426-21bf-41d1-abc1-17140ee6d18e&filename=power_semiconductor_discrete_igbt_ixyn110n120c4h1_datasheet.pdf Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+3184.94 грн
10+ 2732.58 грн
100+ 2398.49 грн
IXYN110N120B4H1 IXYS media?resourcetype=datasheets&itemid=c2694169-2660-4cb6-9dcc-45e29a6d0067&filename=power_semiconductor_discrete_igbt_ixyn110n120b4h1_datasheet.pdf Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
товар відсутній
IXYK85N120C4H1 IXYS media?resourcetype=datasheets&itemid=ac3d5d81-da9c-48f2-af26-cf9da1dfc5b4&filename=power_semiconductor_discrete_igbt_ixyk85n120c4h1_datasheet.pdf Description: IGBT TRENCH 1200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
1+1796.2 грн
25+ 1433.97 грн
IXYN85N120C4H1 IXYS media?resourcetype=datasheets&itemid=9170a0f2-ee3d-4df0-8b6f-eecd52a34f92&filename=power_semiconductor_discrete_igbt_ixyn85n120c4h1_datasheet.pdf Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+2577.56 грн
10+ 2212.28 грн
100+ 1941.8 грн
MXB12R600DPHFC IXYS Power%20Semiconductor%20Selection%20Guide.pdf Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
1+838.58 грн
10+ 691.87 грн
100+ 576.55 грн
MCNA40P2200TA MCNA40P2200TA IXYS media?resourcetype=datasheets&amp;itemid=952f8405-8f29-4611-84f1-f4fcab97bad2&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna40p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
товар відсутній
MCNA55P2200TA MCNA55P2200TA IXYS media?resourcetype=datasheets&amp;itemid=ab546c32-a62a-4bec-af59-64a87d61a795&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna55p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
товар відсутній
MCNA75P2200TA MCNA75P2200TA IXYS media?resourcetype=datasheets&amp;itemid=d097c356-09f8-4361-a33f-a42d9b166a44&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna75p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
товар відсутній
MCNA95P2200TA MCNA95P2200TA IXYS media?resourcetype=datasheets&amp;itemid=e20778ab-a8a6-4408-9585-a3df737cd156&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna95p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
товар відсутній
IXFR140N60X3 IXYS Description: DISCRETE MOSFET 140A 600V X3 ISO
Packaging: Tube
товар відсутній
IXTA230N04T4 IXTA230N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_230n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
товар відсутній
MDD56-14N1B MDD56-14N1B IXYS MDD56-14N1B.pdf Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
1+2131.18 грн
10+ 1823.07 грн
100+ 1594.52 грн
MDD56-08N1B MDD56-08N1B IXYS MDD56-08N1B.pdf Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+1936.6 грн
IXTA140N12T2 IXTA140N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
50+366.9 грн
Мінімальне замовлення: 50
IXYT12N250CV1HV IXYS media?resourcetype=datasheets&amp;itemid=13066e92-8f65-4aac-919d-ea0e27499314&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250cv1hv_datasheet.pdf Description: DISC IGBT XPT-HI VOLTAGE TO-268A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYA12N250CHV IXYA12N250CHV IXYS media?resourcetype=datasheets&amp;itemid=12016a43-b4f8-4b18-a621-534e2a1ab70d&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250chv_datasheet.pdf Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
W2865HA680 W2865HA680 IXYS W2865HA680-720_Type_DS.pdf Description: DIODE GEN PURP 6.8KV 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
товар відсутній
W2865HA720 W2865HA720 IXYS W2865HA680-720_Type_DS.pdf Description: DIODE GEN PURP 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
товар відсутній
IXFA6N120P-TRL IXFA6N120P-TRL IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+449.8 грн
Мінімальне замовлення: 800
QV6012NH4RP QV6012NH4RP IXYS media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+134.49 грн
Мінімальне замовлення: 500
QV6012NH4RP QV6012NH4RP IXYS media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+222.81 грн
10+ 180.1 грн
100+ 145.7 грн
Мінімальне замовлення: 2
QV6012NH5RP QV6012NH5RP IXYS media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+135.67 грн
Мінімальне замовлення: 500
QV6012NH5RP QV6012NH5RP IXYS media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+224.33 грн
10+ 181.71 грн
100+ 146.98 грн
Мінімальне замовлення: 2
QV6012RH5TP QV6012RH5TP IXYS media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+202.21 грн
10+ 163.56 грн
100+ 132.33 грн
500+ 110.39 грн
1000+ 94.52 грн
Мінімальне замовлення: 2
IXTA10P15T-TRL IXTA10P15T-TRL IXYS Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
IXTA10P15T IXTA10P15T IXYS media?resourcetype=datasheets&itemid=382379d8-542e-45c6-bf43-2681718cca42&filename=littelfuse_discrete_mosfets_p-channel_ixt_10p15t_datasheet.pdf Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf Description: SCR 1.2KV 33A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
товар відсутній
CLA15E1200NPZ-TRL CLA15E1200NPZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
товар відсутній
IXKH47N60CC3 IXYS Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Bulk
товар відсутній
IXFH60N20F IXYS Description: MOSFET N-CH 60A TO247
Packaging: Bulk
товар відсутній
IXFT60N20F IXYS Description: MOSFET N-CH 60A TO268
Packaging: Bulk
товар відсутній
IXFT60N20 IXYS Description: MOSFET N-CH 60A TO268
Packaging: Bulk
товар відсутній
IXFP12N65X2A IXYS Description: MOSFET N-CH TO220
Packaging: Bulk
товар відсутній
MKE38RK600DFEL-TUB MKE38RK600DFEL-TUB IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
IXFT21N50 IXYS Description: MOSFET N-CH 21A TO268
Packaging: Bulk
товар відсутній
IXFT21N50F IXYS Description: MOSFET N-CH 21A TO268
Packaging: Bulk
товар відсутній
IXTU4N60P IXYS Description: MOSFET N-CH TO251
Packaging: Bulk
товар відсутній
IXKK85N60CC3 IXYS Description: MOSFET N-CH 600V 85A TO264A
Packaging: Bulk
товар відсутній
N2825TJ450 IXYS media?resourcetype=datasheets&amp;itemid=9ef10b1a-3d01-40d8-9c9c-b173d4203b03&amp;filename=littelfuse_discrete_thyristors_phase_control_n2825t_4_0_datasheet.pdf Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
товар відсутній
W1185LC450 IXYS media?resourcetype=datasheets&itemid=d35ad060-a54c-448f-adfa-b6bd68e14583&filename=littelfuse_discrete_diodes_rectifier_w1185lc4_0_datasheet.pdf Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
товар відсутній
IXFK40N50Q2 IXYS Description: MOSFET N-CH 40A TO264
Packaging: Bulk
товар відсутній
IXFM12N90Q IXYS Description: MOSFET N-CH 900V 12A TO-204AA
Packaging: Bulk
товар відсутній
IXTY26P10T-TRL IXYS Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
товар відсутній
IXFX400N15X3 IXYS media?resourcetype=datasheets&itemid=c6e53bef-e462-4a4c-ba1f-c0550f6db46e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_400n15x3_datasheet.pdf Description: MOSFET N-CH 150V 400A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
товар відсутній
IX526119 IXYS Description: ITF40PF1200DHGTLB-TRR
Packaging: Tape & Reel (TR)
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
200+1394.8 грн
Мінімальне замовлення: 200
IX526112 IXYS Description: ITF40PF1200DHGTLB-TUB
Packaging: Tube
товар відсутній
DPG30IM300PC-TUB DPG30IM300PC-TUB IXYS media?resourcetype=datasheets&itemid=49f8e8f3-467a-4c4a-a17d-dd5385ecdfe2&filename=littelfuse%2520power%2520semiconductors%2520dpg30im300pc%2520datasheet.pdf Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
W4693QK050 media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
товар відсутній
W4693QK080 media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
товар відсутній
MCMA160P1600YA media?resourcetype=datasheets&amp;itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf
Виробник: IXYS
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+5328.33 грн
MCMA160P1800YA-MI media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf
Виробник: IXYS
Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
товар відсутній
DSSK10-018A DSSK10-018A.pdf
DSSK10-018A
Виробник: IXYS
Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
товар відсутній
CMA80E1400HB
Виробник: IXYS
Description: THYRISTOR - TO247
Packaging: Tube
товар відсутній
MTC120WX55GD-SMD MTC120WX55GD_tent.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+1948.17 грн
Мінімальне замовлення: 13
IRFP470 IRFP470.pdf
IRFP470
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
IXFP20N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 20A 600V X3 TO22
Packaging: Tube
товар відсутній
DGSK20-025AS-TUB DGS,DGSK 9, 10, 20-025A,AS.pdf
DGSK20-025AS-TUB
Виробник: IXYS
Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
товар відсутній
IXYH40N120B4H1 media?resourcetype=datasheets&itemid=7e1d21ef-b20d-41a8-bb73-2c403d23711e&filename=power_semiconductor_discrete_igbt_ixyh40n120b4h1_datasheet.pdf
Виробник: IXYS
Description: IGBT TRENCH 1200V 112A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+859.95 грн
30+ 670.49 грн
120+ 631.06 грн
510+ 536.71 грн
MDD810-12N2 media?resourcetype=datasheets&itemid=96f50344-a6b2-47eb-8cd8-997806a5138c&filename=littelfuse_diode_modules_single_and_dual_md_810_1_n2_datasheet.pdf
Виробник: IXYS
Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
товар відсутній
IXFN140N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 140A 600V X3 SOT
Packaging: Tube
товар відсутній
IXYN110N120C4H1 media?resourcetype=datasheets&itemid=00e33426-21bf-41d1-abc1-17140ee6d18e&filename=power_semiconductor_discrete_igbt_ixyn110n120c4h1_datasheet.pdf
Виробник: IXYS
Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3184.94 грн
10+ 2732.58 грн
100+ 2398.49 грн
IXYN110N120B4H1 media?resourcetype=datasheets&itemid=c2694169-2660-4cb6-9dcc-45e29a6d0067&filename=power_semiconductor_discrete_igbt_ixyn110n120b4h1_datasheet.pdf
Виробник: IXYS
Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
товар відсутній
IXYK85N120C4H1 media?resourcetype=datasheets&itemid=ac3d5d81-da9c-48f2-af26-cf9da1dfc5b4&filename=power_semiconductor_discrete_igbt_ixyk85n120c4h1_datasheet.pdf
Виробник: IXYS
Description: IGBT TRENCH 1200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1796.2 грн
25+ 1433.97 грн
IXYN85N120C4H1 media?resourcetype=datasheets&itemid=9170a0f2-ee3d-4df0-8b6f-eecd52a34f92&filename=power_semiconductor_discrete_igbt_ixyn85n120c4h1_datasheet.pdf
Виробник: IXYS
Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2577.56 грн
10+ 2212.28 грн
100+ 1941.8 грн
MXB12R600DPHFC Power%20Semiconductor%20Selection%20Guide.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+838.58 грн
10+ 691.87 грн
100+ 576.55 грн
MCNA40P2200TA media?resourcetype=datasheets&amp;itemid=952f8405-8f29-4611-84f1-f4fcab97bad2&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna40p2200ta%2520datasheet.pdf
MCNA40P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
товар відсутній
MCNA55P2200TA media?resourcetype=datasheets&amp;itemid=ab546c32-a62a-4bec-af59-64a87d61a795&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna55p2200ta%2520datasheet.pdf
MCNA55P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
товар відсутній
MCNA75P2200TA media?resourcetype=datasheets&amp;itemid=d097c356-09f8-4361-a33f-a42d9b166a44&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna75p2200ta%2520datasheet.pdf
MCNA75P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
товар відсутній
MCNA95P2200TA media?resourcetype=datasheets&amp;itemid=e20778ab-a8a6-4408-9585-a3df737cd156&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna95p2200ta%2520datasheet.pdf
MCNA95P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
товар відсутній
IXFR140N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 140A 600V X3 ISO
Packaging: Tube
товар відсутній
IXTA230N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_230n04t4_datasheet.pdf.pdf
IXTA230N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
товар відсутній
MDD56-14N1B MDD56-14N1B.pdf
MDD56-14N1B
Виробник: IXYS
Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2131.18 грн
10+ 1823.07 грн
100+ 1594.52 грн
MDD56-08N1B MDD56-08N1B.pdf
MDD56-08N1B
Виробник: IXYS
Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1936.6 грн
IXTA140N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n12t2_datasheet.pdf.pdf
IXTA140N12T2
Виробник: IXYS
Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
50+366.9 грн
Мінімальне замовлення: 50
IXYT12N250CV1HV media?resourcetype=datasheets&amp;itemid=13066e92-8f65-4aac-919d-ea0e27499314&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250cv1hv_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-268A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYA12N250CHV media?resourcetype=datasheets&amp;itemid=12016a43-b4f8-4b18-a621-534e2a1ab70d&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250chv_datasheet.pdf
IXYA12N250CHV
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
W2865HA680 W2865HA680-720_Type_DS.pdf
W2865HA680
Виробник: IXYS
Description: DIODE GEN PURP 6.8KV 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
товар відсутній
W2865HA720 W2865HA680-720_Type_DS.pdf
W2865HA720
Виробник: IXYS
Description: DIODE GEN PURP 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
товар відсутній
IXFA6N120P-TRL littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_6n120p_datasheet.pdf.pdf
IXFA6N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+449.8 грн
Мінімальне замовлення: 800
QV6012NH4RP media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet
QV6012NH4RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+134.49 грн
Мінімальне замовлення: 500
QV6012NH4RP media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet
QV6012NH4RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+222.81 грн
10+ 180.1 грн
100+ 145.7 грн
Мінімальне замовлення: 2
QV6012NH5RP media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet
QV6012NH5RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+135.67 грн
Мінімальне замовлення: 500
QV6012NH5RP media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet
QV6012NH5RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+224.33 грн
10+ 181.71 грн
100+ 146.98 грн
Мінімальне замовлення: 2
QV6012RH5TP media?resourcetype=datasheets&itemid=b3cd379e-1c95-41fd-986c-ece0e263c0a6&filename=littelfuse-thyristor-qvxx12xhx-datasheet
QV6012RH5TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+202.21 грн
10+ 163.56 грн
100+ 132.33 грн
500+ 110.39 грн
1000+ 94.52 грн
Мінімальне замовлення: 2
IXTA10P15T-TRL
IXTA10P15T-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
IXTA10P15T media?resourcetype=datasheets&itemid=382379d8-542e-45c6-bf43-2681718cca42&filename=littelfuse_discrete_mosfets_p-channel_ixt_10p15t_datasheet.pdf
IXTA10P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
CLA15E1200NPZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf
CLA15E1200NPZ-TUB
Виробник: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
товар відсутній
CLA15E1200NPZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf
CLA15E1200NPZ-TRL
Виробник: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
товар відсутній
IXKH47N60CC3
Виробник: IXYS
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Bulk
товар відсутній
IXFH60N20F
Виробник: IXYS
Description: MOSFET N-CH 60A TO247
Packaging: Bulk
товар відсутній
IXFT60N20F
Виробник: IXYS
Description: MOSFET N-CH 60A TO268
Packaging: Bulk
товар відсутній
IXFT60N20
Виробник: IXYS
Description: MOSFET N-CH 60A TO268
Packaging: Bulk
товар відсутній
IXFP12N65X2A
Виробник: IXYS
Description: MOSFET N-CH TO220
Packaging: Bulk
товар відсутній
MKE38RK600DFEL-TUB littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TUB
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
товар відсутній
IXFT21N50
Виробник: IXYS
Description: MOSFET N-CH 21A TO268
Packaging: Bulk
товар відсутній
IXFT21N50F
Виробник: IXYS
Description: MOSFET N-CH 21A TO268
Packaging: Bulk
товар відсутній
IXTU4N60P
Виробник: IXYS
Description: MOSFET N-CH TO251
Packaging: Bulk
товар відсутній
IXKK85N60CC3
Виробник: IXYS
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Bulk
товар відсутній
N2825TJ450 media?resourcetype=datasheets&amp;itemid=9ef10b1a-3d01-40d8-9c9c-b173d4203b03&amp;filename=littelfuse_discrete_thyristors_phase_control_n2825t_4_0_datasheet.pdf
Виробник: IXYS
Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
товар відсутній
W1185LC450 media?resourcetype=datasheets&itemid=d35ad060-a54c-448f-adfa-b6bd68e14583&filename=littelfuse_discrete_diodes_rectifier_w1185lc4_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
товар відсутній
IXFK40N50Q2
Виробник: IXYS
Description: MOSFET N-CH 40A TO264
Packaging: Bulk
товар відсутній
IXFM12N90Q
Виробник: IXYS
Description: MOSFET N-CH 900V 12A TO-204AA
Packaging: Bulk
товар відсутній
IXTY26P10T-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
товар відсутній
IXFX400N15X3 media?resourcetype=datasheets&itemid=c6e53bef-e462-4a4c-ba1f-c0550f6db46e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_400n15x3_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 150V 400A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
товар відсутній
IX526119
Виробник: IXYS
Description: ITF40PF1200DHGTLB-TRR
Packaging: Tape & Reel (TR)
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
200+1394.8 грн
Мінімальне замовлення: 200
IX526112
Виробник: IXYS
Description: ITF40PF1200DHGTLB-TUB
Packaging: Tube
товар відсутній
DPG30IM300PC-TUB media?resourcetype=datasheets&itemid=49f8e8f3-467a-4c4a-a17d-dd5385ecdfe2&filename=littelfuse%2520power%2520semiconductors%2520dpg30im300pc%2520datasheet.pdf
DPG30IM300PC-TUB
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
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