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SLE 66C82P M5.1 Infineon Technologies SPI_SLE66C82P_1102.pdf?folderId=db3a304412b407950112b4169e6a2129&fileId=db3a304412b407950112b4169ea4212a Description: IC SECURITY CTRLR 16BIT M5.1
товар відсутній
SLE 66CL80P M8.4 Infineon Technologies SLE%2066CL80P.pdf Description: IC CONTROLLER DUAL 16BIT M8.4
товар відсутній
SLE 66CL80P NB Infineon Technologies SLE%2066CL80P.pdf Description: IC CONTROLLER DUAL 16BIT
товар відсутній
SLE 66CL81P C Infineon Technologies SLE%2066CL81P.pdf Description: IC SECURITY CONTROLLER 16BIT
товар відсутній
SLE 66CL81P MCC8 Infineon Technologies SLE%2066CL81P.pdf Description: IC SECURITY CTRLR 16BIT MCC8-2
товар відсутній
SLE 66CL81P NB Infineon Technologies SLE%2066CL81P.pdf Description: IC SECURITY CTRLR 16BIT WAFER
товар відсутній
SLE 66CLX640P M8.4 Infineon Technologies SLE%2066CLX640P.pdf Description: IC SEC CTRLR DUAL 16BIT M8.4
товар відсутній
SLE 66CLX641P MCC8 Infineon Technologies SLE%2066CLX641P.pdf Description: IC SECURITY CTRLR 16BIT MCC8
товар відсутній
SLE 66CLX641P MFCC8 Infineon Technologies SLE%2066CLX641P.pdf Description: IC SECURITY CTRLR 16BIT MFCC8
товар відсутній
SLE 66CX162PE MFC5.6 Infineon Technologies SLE%2066CX162PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
SLE 66CX162PE MFC5.8 Infineon Technologies SLE%2066CX162PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.8
товар відсутній
SLE 66CX322P M5.1 Infineon Technologies Description: IC SECURITY CTRLR 16BIT M5.1
товар відсутній
SLE 66CX642P M5.2 Infineon Technologies SLE%2066CX642P.pdf Description: IC SECURITY CTRLR 16BIT M5.2
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SLE 66CX642P MFC5.8 Infineon Technologies SLE%2066CX642P.pdf Description: IC SECURITY CTRLR 16BIT MFC5.8
товар відсутній
SLE 66CX680PE MFC5.6 Infineon Technologies SLE%2066CX680PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
SLE 66CX680PE MFC5.8 Infineon Technologies SLE%2066CX680PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.8
товар відсутній
SLE 66R35 MCC8 SLE 66R35 MCC8 Infineon Technologies SLE66R35.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Packaging: Tape & Reel (TR)
Package / Case: MCC8 Chip Card Module
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Standards: ISO 14443
Supplier Device Package: P-MCC8-2-3
Part Status: Obsolete
товар відсутній
SLE 66R35 MFCC1 SLE 66R35 MFCC1 Infineon Technologies SLE66R35.pdf Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
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SLE 7736 C Infineon Technologies SLE%207736,E.pdf Description: IC EEPROM COUNTER 237BIT C-PKG
товар відсутній
SLE 7737E M3.2 Infineon Technologies Description: IC EEPROM COUNTER 237BIT M3.2-6
товар відсутній
SLE 88CF4000P C Infineon Technologies SLE%2088CF4000P.pdf Description: IC SECURITY CTRLR 32BIT C-PKG
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SLE 88CF4000P M5.1 Infineon Technologies SLE%2088CF4000P.pdf Description: IC SECURITY CTRLR 32BIT T-M5.1
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SLE 88CF4000P MFC5.8 Infineon Technologies SLE%2088CF4000P.pdf Description: IC SECURITY CTRLR 32BIT S-MFC5.8
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SLE 88CFX4000P C Infineon Technologies SLE%2088CF4000P.pdf Description: IC SECURITY CTRLR 32BIT C-PKG
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SLE88CFX4000PM51ZZZA1 Infineon Technologies SLE%2088CF4000P.pdf Description: IC SECURITY CTRLR 32BIT T-M5.1
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SLE 88CX720P M5.3 Infineon Technologies SLE88CX720P.pdf Description: IC SECURITY CTRLR 32BIT T-M5.3
товар відсутній
SMBD 7000 E6433 SMBD 7000 E6433 Infineon Technologies smbd7000_mmbd7000series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c43b6f30446 Description: DIODE ARRAY GP 100V 200MA SOT23
товар відсутній
SMBT3904E6433HTMA1 SMBT3904E6433HTMA1 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS NPN 40V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
товар відсутній
SMBT3904PNE6327HTSA1 SMBT3904PNE6327HTSA1 Infineon Technologies smbt3904pn_smbt3904upn.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460a24930193 Description: TRANS NPN/PNP 40V 0.2A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
товар відсутній
SMBT3904SE6327HTSA1 SMBT3904SE6327HTSA1 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS 2NPN 40V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT363-PO
товар відсутній
SMBT 3904U E6327 SMBT 3904U E6327 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS 2NPN 40V 0.2A SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SC74-6
товар відсутній
SMBT3904UPNE6327HTSA1 SMBT3904UPNE6327HTSA1 Infineon Technologies smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191 Description: TRANS NPN/PNP 40V 0.2A SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
товар відсутній
SMBT 3906 E6767 SMBT 3906 E6767 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS PNP 40V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
товар відсутній
SMBT3906SE6327HTSA1 SMBT3906SE6327HTSA1 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
товар відсутній
SMBT3906UE6327HTSA1 SMBT3906UE6327HTSA1 Infineon Technologies smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192 Description: TRANS 2PNP 40V 0.2A SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
товар відсутній
SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 Infineon Technologies smbta06upn.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fabcd9b1d89 Description: TRANS NPN/PNP 80V 0.5A SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
товар відсутній
SMBTA42E6327HTSA1 SMBTA42E6327HTSA1 Infineon Technologies smbta42_mmbta42.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449bfc5760237 Description: TRANS NPN 300V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+5.95 грн
6000+ 5.47 грн
9000+ 4.73 грн
Мінімальне замовлення: 3000
SMBTA 42 E6433 SMBTA 42 E6433 Infineon Technologies smbta42_mmbta42.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449bfc5760237 Description: TRANS NPN 300V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товар відсутній
SMBTA 92 E6433 SMBTA 92 E6433 Infineon Technologies smbta92-mmbta92.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c5cd03023b Description: TRANS PNP 300V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товар відсутній
SN7002N L6327 SN7002N L6327 Infineon Technologies SN7002N.pdf Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
товар відсутній
SN7002W E6327 SN7002W E6327 Infineon Technologies SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
товар відсутній
SP12 SP12 Infineon Technologies SP12%20Product%20Brief.pdf Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP12T-T1 SP12T-T1 Infineon Technologies SP12T%20Product%20Brief.pdf Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP12T-T7 SP12T-T7 Infineon Technologies SP12T%20Product%20Brief.pdf Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E1060XT Infineon Technologies Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E106ZNT Infineon Technologies Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E1160NT Infineon Technologies Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E2060XT Infineon Technologies Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SPB02N60S5ATMA1 SPB02N60S5ATMA1 Infineon Technologies SPB02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c983b4732 Description: MOSFET N-CH 600V 1.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
SPB03N60S5ATMA1 SPB03N60S5ATMA1 Infineon Technologies SPB03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c9b234736 Description: MOSFET N-CH 600V 3.2A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
SPB04N50C3ATMA1 SPB04N50C3ATMA1 Infineon Technologies SPB04N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2983481a Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товар відсутній
SPB04N60S5ATMA1 SPB04N60S5ATMA1 Infineon Technologies SPB04N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c9e11473a Description: MOSFET N-CH 600V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
товар відсутній
SPB07N60S5ATMA1 SPB07N60S5ATMA1 Infineon Technologies SPB07N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d57bd485b Description: MOSFET N-CH 600V 7.3A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
товар відсутній
SPB08P06P SPB08P06P Infineon Technologies SPB08P06P.pdf Description: MOSFET P-CH 60V 8.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
SPB08P06PGATMA1 SPB08P06PGATMA1 Infineon Technologies SPB08P06PG.pdf Description: MOSFET P-CH 60V 8.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
SPB100N03S2-03 G SPB100N03S2-03 G Infineon Technologies SPB100N03S2-03G.pdf Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
товар відсутній
SPB100N03S2L-03 G SPB100N03S2L-03 G Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
товар відсутній
SPB100N04S2-04 SPB100N04S2-04 Infineon Technologies SPP,SPB100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
товар відсутній
SPB100N04S2L-03 SPB100N04S2L-03 Infineon Technologies SP(B,P)100N04S2L-03.pdf Description: MOSFET N-CH 40V 100A TO263-3
товар відсутній
SPB100N06S2-05 SPB100N06S2-05 Infineon Technologies SP%28B%2CP%29100N06S2-05.pdf Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
SLE 66C82P M5.1 SPI_SLE66C82P_1102.pdf?folderId=db3a304412b407950112b4169e6a2129&fileId=db3a304412b407950112b4169ea4212a
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT M5.1
товар відсутній
SLE 66CL80P M8.4 SLE%2066CL80P.pdf
Виробник: Infineon Technologies
Description: IC CONTROLLER DUAL 16BIT M8.4
товар відсутній
SLE 66CL80P NB SLE%2066CL80P.pdf
Виробник: Infineon Technologies
Description: IC CONTROLLER DUAL 16BIT
товар відсутній
SLE 66CL81P C SLE%2066CL81P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CONTROLLER 16BIT
товар відсутній
SLE 66CL81P MCC8 SLE%2066CL81P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MCC8-2
товар відсутній
SLE 66CL81P NB SLE%2066CL81P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT WAFER
товар відсутній
SLE 66CLX640P M8.4 SLE%2066CLX640P.pdf
Виробник: Infineon Technologies
Description: IC SEC CTRLR DUAL 16BIT M8.4
товар відсутній
SLE 66CLX641P MCC8 SLE%2066CLX641P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MCC8
товар відсутній
SLE 66CLX641P MFCC8 SLE%2066CLX641P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MFCC8
товар відсутній
SLE 66CX162PE MFC5.6 SLE%2066CX162PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
SLE 66CX162PE MFC5.8 SLE%2066CX162PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
товар відсутній
SLE 66CX322P M5.1
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT M5.1
товар відсутній
SLE 66CX642P M5.2 SLE%2066CX642P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT M5.2
товар відсутній
SLE 66CX642P MFC5.8 SLE%2066CX642P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT MFC5.8
товар відсутній
SLE 66CX680PE MFC5.6 SLE%2066CX680PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
SLE 66CX680PE MFC5.8 SLE%2066CX680PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
товар відсутній
SLE 66R35 MCC8 SLE66R35.pdf
SLE 66R35 MCC8
Виробник: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Packaging: Tape & Reel (TR)
Package / Case: MCC8 Chip Card Module
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Transponder
Standards: ISO 14443
Supplier Device Package: P-MCC8-2-3
Part Status: Obsolete
товар відсутній
SLE 66R35 MFCC1 SLE66R35.pdf
SLE 66R35 MFCC1
Виробник: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
товар відсутній
SLE 7736 C SLE%207736,E.pdf
Виробник: Infineon Technologies
Description: IC EEPROM COUNTER 237BIT C-PKG
товар відсутній
SLE 7737E M3.2
Виробник: Infineon Technologies
Description: IC EEPROM COUNTER 237BIT M3.2-6
товар відсутній
SLE 88CF4000P C SLE%2088CF4000P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT C-PKG
товар відсутній
SLE 88CF4000P M5.1 SLE%2088CF4000P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT T-M5.1
товар відсутній
SLE 88CF4000P MFC5.8 SLE%2088CF4000P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT S-MFC5.8
товар відсутній
SLE 88CFX4000P C SLE%2088CF4000P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT C-PKG
товар відсутній
SLE88CFX4000PM51ZZZA1 SLE%2088CF4000P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT T-M5.1
товар відсутній
SLE 88CX720P M5.3 SLE88CX720P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 32BIT T-M5.3
товар відсутній
SMBD 7000 E6433 smbd7000_mmbd7000series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c43b6f30446
SMBD 7000 E6433
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 100V 200MA SOT23
товар відсутній
SMBT3904E6433HTMA1 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT3904E6433HTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 40V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
товар відсутній
SMBT3904PNE6327HTSA1 smbt3904pn_smbt3904upn.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460a24930193
SMBT3904PNE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN/PNP 40V 0.2A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
товар відсутній
SMBT3904SE6327HTSA1 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT3904SE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN 40V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT363-PO
товар відсутній
SMBT 3904U E6327 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT 3904U E6327
Виробник: Infineon Technologies
Description: TRANS 2NPN 40V 0.2A SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SC74-6
товар відсутній
SMBT3904UPNE6327HTSA1 smbt3904series_mmbt3904.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d0114460005c10191
SMBT3904UPNE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN/PNP 40V 0.2A SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
товар відсутній
SMBT 3906 E6767 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT 3906 E6767
Виробник: Infineon Technologies
Description: TRANS PNP 40V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
товар відсутній
SMBT3906SE6327HTSA1 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT3906SE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
товар відсутній
SMBT3906UE6327HTSA1 smbt3906series_mmbt3906.pdf?folderId=db3a30431441fb5d011445fab851018e&fileId=db3a30431441fb5d01144604610f0192
SMBT3906UE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS 2PNP 40V 0.2A SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
товар відсутній
SMBTA06UPNE6327HTSA1 smbta06upn.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901155fabcd9b1d89
SMBTA06UPNE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN/PNP 80V 0.5A SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
товар відсутній
SMBTA42E6327HTSA1 smbta42_mmbta42.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449bfc5760237
SMBTA42E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS NPN 300V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.95 грн
6000+ 5.47 грн
9000+ 4.73 грн
Мінімальне замовлення: 3000
SMBTA 42 E6433 smbta42_mmbta42.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449bfc5760237
SMBTA 42 E6433
Виробник: Infineon Technologies
Description: TRANS NPN 300V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товар відсутній
SMBTA 92 E6433 smbta92-mmbta92.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c5cd03023b
SMBTA 92 E6433
Виробник: Infineon Technologies
Description: TRANS PNP 300V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товар відсутній
SN7002N L6327 SN7002N.pdf
SN7002N L6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
товар відсутній
SN7002W E6327 SN7002W_Rev2.5_pdf%5B1%5D.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043344adb9d0134569a59ab6195&ack=t
SN7002W E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
товар відсутній
SP12 SP12%20Product%20Brief.pdf
SP12
Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP12T-T1 SP12T%20Product%20Brief.pdf
SP12T-T1
Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP12T-T7 SP12T%20Product%20Brief.pdf
SP12T-T7
Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E1060XT
Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E106ZNT
Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E1160NT
Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SP300V21E2060XT
Виробник: Infineon Technologies
Description: IC TIRE PRESSURE SENSOR PDSO-14
товар відсутній
SPB02N60S5ATMA1 SPB02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c983b4732
SPB02N60S5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
SPB03N60S5ATMA1 SPB03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c9b234736
SPB03N60S5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
SPB04N50C3ATMA1 SPB04N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2983481a
SPB04N50C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
товар відсутній
SPB04N60S5ATMA1 SPB04N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c9e11473a
SPB04N60S5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 4.5A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
товар відсутній
SPB07N60S5ATMA1 SPB07N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d57bd485b
SPB07N60S5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
товар відсутній
SPB08P06P SPB08P06P.pdf
SPB08P06P
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 8.8A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
SPB08P06PGATMA1 SPB08P06PG.pdf
SPB08P06PGATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 8.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
товар відсутній
SPB100N03S2-03 G SPB100N03S2-03G.pdf
SPB100N03S2-03 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
товар відсутній
SPB100N03S2L-03 G Part_Number_Guide_Web.pdf
SPB100N03S2L-03 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
товар відсутній
SPB100N04S2-04 SPP,SPB100N04S2-04.pdf
SPB100N04S2-04
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
товар відсутній
SPB100N04S2L-03 SP(B,P)100N04S2L-03.pdf
SPB100N04S2L-03
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
товар відсутній
SPB100N06S2-05 SP%28B%2CP%29100N06S2-05.pdf
SPB100N06S2-05
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
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