Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139418) > Сторінка 85 з 2324
| Фото | Назва | Виробник | Інформація |
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SAF 82526 N V2.2 | Infineon Technologies |
 Description: IC INTERFACE SPECIALIZED 44PLCCPackaging: Tube Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Interface: Serial Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: P-LCC-44-1 Part Status: Obsolete |
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C161JCLFCAKXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT ROMLESS 128TQFP Packaging: Tape & Reel (TR) Package / Case: 128-LQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 10K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 12x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-TQFP-128-2 Part Status: Obsolete Number of I/O: 93 DigiKey Programmable: Not Verified |
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C164CIL25MCAKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT ROMLESS 80MQFP Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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SAK-C167CR-L33M HA+ | Infineon Technologies |
Description: IC MCU 16BIT 2KB XRAM 144MQFP |
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SAK-C167CR-LM HA+ | Infineon Technologies |
Description: IC MCU 16BIT 2KB XRAM 144-MQFP |
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SAK-C167CS-L33M CA+ | Infineon Technologies |
Description: IC MCU 16BIT 33MHZ MQFP-144 |
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C167CSL40MCAKXQLA1 | Infineon Technologies |
Description: IC MCU 16BIT ROMLESS 144MQFP Packaging: Tray Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 40MHz RAM Size: 11K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-8 Part Status: Discontinued at Digi-Key Number of I/O: 111 DigiKey Programmable: Not Verified |
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K167CSLMCAZNP | Infineon Technologies |
Description: IC MCU 16BIT ROMLESS 144MQFP Packaging: Tray Package / Case: 144-BQFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 11K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-144-6 Part Status: Obsolete Number of I/O: 111 DigiKey Programmable: Not Verified |
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C167SRLMHAKXQLA1 | Infineon Technologies |
Description: IC MCU 16BIT 144MQFP |
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TC1796256F150EBCKDUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 416BGA Packaging: Tape & Reel (TR) Package / Case: 416-BGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: TriCore™ Data Converters: A/D 44x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-BGA-416 Part Status: Obsolete Number of I/O: 123 DigiKey Programmable: Not Verified |
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XC161CJ16F40FBBKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 144TQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 12x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-144-7 Part Status: Last Time Buy Number of I/O: 99 DigiKey Programmable: Not Verified |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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SAK-XC161CS-32F20F BB-A | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 144TQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 256KB (256K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 12x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, I²C, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-144-7 Part Status: Discontinued at Digi-Key Number of I/O: 99 DigiKey Programmable: Not Verified |
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XC164CS16F20FBBKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 14x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-100-5 Part Status: Discontinued at Digi-Key Number of I/O: 79 DigiKey Programmable: Not Verified |
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XC167CI16F40FBBKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 144TQFP |
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| XC167CI32F40FBBAKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 144TQFP |
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SAK-XC888C-8FFA 5V AC | Infineon Technologies |
Description: IC MCU 8BIT FLASH TQFP-64 |
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SAK-XC888CM-8FFA AB | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 64TQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 1.75K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TQFP-64 Number of I/O: 48 DigiKey Programmable: Not Verified |
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SD 199 E6327 | Infineon Technologies |
Description: DIODE VARACTOR RF SOD-323 |
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SDB06S60 | Infineon Technologies |
Description: DIODE SIL CARB 600V 6A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
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SDB20S30 | Infineon Technologies |
Description: DIODE ARRAY SCHOTTKY 300V D2PAK |
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SDD04S60 | Infineon Technologies |
Description: DIODE SIL CARB 600V 4A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO252-3-11 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
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SDP10S30 | Infineon Technologies |
Description: DIODE SIL CARB 300V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 300 V |
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SDT05S60 | Infineon Technologies |
Description: DIODE SIL CARB 600V 5A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 170pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
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SDT08S60 | Infineon Technologies |
Description: DIODE SIL CARB 600V 8A TO220-2-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 280pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 300 µA @ 600 V |
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SDT10S60 | Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 350pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 350 µA @ 600 V |
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| SFH 551/1-1 | Infineon Technologies |
Description: MOD PHOTO DETECT RCVR 700NM TTL Packaging: Bulk Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 5Mbps Power - Minimum Receivable: -22dBm Part Status: Obsolete Current - Supply: 4 mA |
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| SFH 551/1V-1 | Infineon Technologies |
Description: MOD PHOTO DETECT RCVR 700NM TTL Packaging: Bulk Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Data Rate: 50Mbps Power - Minimum Receivable: -22dBm Part Status: Obsolete Current - Supply: 4 mA |
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| SFH 757 | Infineon Technologies |
Description: TRANSMITTER DIODE FIBER OPTIC |
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| SIDC01D120H6 | Infineon Technologies |
Description: DIODE GP 1.2KV 600MA WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 600mA Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
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| SIDC01D60C6 | Infineon Technologies | Description: DIODE GEN PURP WAFER |
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| SIDC02D60C6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 6A WAFER |
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| SIDC02D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 3A WAFER |
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| SIDC03D120F6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 2A WAFER |
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| SIDC03D120H6 | Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 3A WAFER |
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| SIDC03D60C6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 10A WAFER |
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| SIDC03D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 6A WAFER |
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| SIDC04D60F6X1SA3 | Infineon Technologies |
Description: DIODE GP 600V 9A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
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| SIDC05D60C6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 15A WAFER |
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| SIDC06D120E6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
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| SIDC06D120F6X1SA2 | Infineon Technologies |
Description: DIODE GP 1.2KV 5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
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| SIDC06D120H6X1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 7.5A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 7.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
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| SIDC06D60AC6X1SA1 | Infineon Technologies |
Description: DIODE GP 600V 20A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
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| SIDC06D60C6 | Infineon Technologies |
Description: DIODE GP 600V 20A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
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| SIDC06D60E6X1SA3 | Infineon Technologies |
Description: DIODE GP 600V 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
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| SIDC06D60F6X1SA3 | Infineon Technologies |
Description: DIODE GP 600V 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
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| SIDC07D60AF6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 22.5A WAFER |
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| SIDC07D60E6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 15A WAFER |
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| SIDC07D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 22.5A WAFER |
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| SIDC08D120F6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 7A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 7A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
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| SIDC08D120H6X1SA1 | Infineon Technologies |
Description: DIODE GP 1.2KV 10A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
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| SIDC08D60C6 | Infineon Technologies |
Description: DIODE GP 600V 30A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
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| SIDC08D60C6Y | Infineon Technologies |
Description: DIODE GP 600V 30A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A Current - Reverse Leakage @ Vr: 27 µA @ 600 V |
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| SIDC09D60E6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 20A WAFER |
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| SIDC09D60E6Y | Infineon Technologies |
Description: DIODE GEN PURP 600V 20A WAFER |
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| SIDC09D60F6 | Infineon Technologies |
Description: DIODE GEN PURP 600V 30A WAFER |
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| SIDC10D120H6X1SA5 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
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| SIDC110D170H | Infineon Technologies |
Description: DIODE GEN PURP 1.7KV 200A WAFER |
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| SIDC11D60SIC3 | Infineon Technologies |
Description: DIODE SIL CARB 600V 4A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 150pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
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| SIDC14D120E6X1SA4 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
||||
| SIDC14D120F6X1SA3 | Infineon Technologies |
Description: DIODE GP 1.2KV 15A WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A Current - Reverse Leakage @ Vr: 27 µA @ 1200 V |
товар відсутній |
| SAF 82526 N V2.2 |
|
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
товар відсутній
| C161JCLFCAKXQMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 12x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-128-2
Part Status: Obsolete
Number of I/O: 93
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 128TQFP
Packaging: Tape & Reel (TR)
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 12x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-128-2
Part Status: Obsolete
Number of I/O: 93
DigiKey Programmable: Not Verified
товар відсутній
| C164CIL25MCAKXUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
| SAK-C167CR-L33M HA+ |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 2KB XRAM 144MQFP
Description: IC MCU 16BIT 2KB XRAM 144MQFP
товар відсутній
| SAK-C167CR-LM HA+ |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 2KB XRAM 144-MQFP
Description: IC MCU 16BIT 2KB XRAM 144-MQFP
товар відсутній
| SAK-C167CS-L33M CA+ |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 33MHZ MQFP-144
Description: IC MCU 16BIT 33MHZ MQFP-144
товар відсутній
| C167CSL40MCAKXQLA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Discontinued at Digi-Key
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Discontinued at Digi-Key
Number of I/O: 111
DigiKey Programmable: Not Verified
товар відсутній
| K167CSLMCAZNP |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Obsolete
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Obsolete
Number of I/O: 111
DigiKey Programmable: Not Verified
товар відсутній
| TC1796256F150EBCKDUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Part Status: Obsolete
Number of I/O: 123
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Part Status: Obsolete
Number of I/O: 123
DigiKey Programmable: Not Verified
товар відсутній
| XC161CJ16F40FBBKXUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I2C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 1465.7 грн |
| SAK-XC161CS-32F20F BB-A |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I²C, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Discontinued at Digi-Key
Number of I/O: 99
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I²C, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Discontinued at Digi-Key
Number of I/O: 99
DigiKey Programmable: Not Verified
товар відсутній
| XC164CS16F20FBBKXUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Discontinued at Digi-Key
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Discontinued at Digi-Key
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
| XC167CI16F40FBBKXUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Description: IC MCU 16BIT 128KB FLASH 144TQFP
товар відсутній
| XC167CI32F40FBBAKXUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 144TQFP
Description: IC MCU 16BIT 256KB FLASH 144TQFP
товар відсутній
| SAK-XC888C-8FFA 5V AC |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT FLASH TQFP-64
Description: IC MCU 8BIT FLASH TQFP-64
товар відсутній
| SAK-XC888CM-8FFA AB |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Number of I/O: 48
DigiKey Programmable: Not Verified
товар відсутній
| SDB06S60 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
| SDB20S30 |
|
Виробник: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 300V D2PAK
Description: DIODE ARRAY SCHOTTKY 300V D2PAK
товар відсутній
| SDD04S60 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO252-3-11
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 4A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO252-3-11
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
| SDP10S30 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 300V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Description: DIODE SIL CARB 300V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
товар відсутній
| SDT05S60 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 5A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
| SDT08S60 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 8A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Description: DIODE SIL CARB 600V 8A TO220-2-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
товар відсутній
| SDT10S60 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 600 V
товар відсутній
| SFH 551/1-1 |
|
Виробник: Infineon Technologies
Description: MOD PHOTO DETECT RCVR 700NM TTL
Packaging: Bulk
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 5Mbps
Power - Minimum Receivable: -22dBm
Part Status: Obsolete
Current - Supply: 4 mA
Description: MOD PHOTO DETECT RCVR 700NM TTL
Packaging: Bulk
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 5Mbps
Power - Minimum Receivable: -22dBm
Part Status: Obsolete
Current - Supply: 4 mA
товар відсутній
| SFH 551/1V-1 |
|
Виробник: Infineon Technologies
Description: MOD PHOTO DETECT RCVR 700NM TTL
Packaging: Bulk
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 50Mbps
Power - Minimum Receivable: -22dBm
Part Status: Obsolete
Current - Supply: 4 mA
Description: MOD PHOTO DETECT RCVR 700NM TTL
Packaging: Bulk
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 50Mbps
Power - Minimum Receivable: -22dBm
Part Status: Obsolete
Current - Supply: 4 mA
товар відсутній
| SIDC01D120H6 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 600MA WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 600mA
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 600MA WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 600mA
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 600 mA
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC02D60C6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 6A WAFER
Description: DIODE GEN PURP 600V 6A WAFER
товар відсутній
| SIDC02D60F6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 3A WAFER
Description: DIODE GEN PURP 600V 3A WAFER
товар відсутній
| SIDC03D120F6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 2A WAFER
Description: DIODE GEN PURP 1.2KV 2A WAFER
товар відсутній
| SIDC03D120H6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 3A WAFER
Description: DIODE GEN PURP 1.2KV 3A WAFER
товар відсутній
| SIDC03D60C6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 10A WAFER
Description: DIODE GEN PURP 600V 10A WAFER
товар відсутній
| SIDC03D60F6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 6A WAFER
Description: DIODE GEN PURP 600V 6A WAFER
товар відсутній
| SIDC04D60F6X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GP 600V 9A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 9A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
| SIDC05D60C6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 15A WAFER
Description: DIODE GEN PURP 600V 15A WAFER
товар відсутній
| SIDC06D120E6X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC06D120F6X1SA2 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC06D120H6X1SA4 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC06D60AC6X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
| SIDC06D60C6 |
|
Виробник: Infineon Technologies
Description: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
| SIDC06D60E6X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
| SIDC06D60F6X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
| SIDC07D60AF6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 22.5A WAFER
Description: DIODE GEN PURP 600V 22.5A WAFER
товар відсутній
| SIDC07D60E6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 15A WAFER
Description: DIODE GEN PURP 600V 15A WAFER
товар відсутній
| SIDC07D60F6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 22.5A WAFER
Description: DIODE GEN PURP 600V 22.5A WAFER
товар відсутній
| SIDC08D120F6X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 7A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 7A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 7A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 7 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC08D120H6X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 10A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC08D60C6 |
|
Виробник: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
| SIDC08D60C6Y |
|
Виробник: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
| SIDC09D60E6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 20A WAFER
Description: DIODE GEN PURP 600V 20A WAFER
товар відсутній
| SIDC09D60E6Y |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 20A WAFER
Description: DIODE GEN PURP 600V 20A WAFER
товар відсутній
| SIDC09D60F6 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A WAFER
Description: DIODE GEN PURP 600V 30A WAFER
товар відсутній
| SIDC10D120H6X1SA5 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC110D170H |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 200A WAFER
Description: DIODE GEN PURP 1.7KV 200A WAFER
товар відсутній
| SIDC11D60SIC3 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 4A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 4A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
| SIDC14D120E6X1SA4 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
| SIDC14D120F6X1SA3 |
|
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Description: DIODE GP 1.2KV 15A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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