Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139415) > Сторінка 86 з 2324

Обрати Сторінку:   [  << Попередня Сторінка ]  1 81 82 83 84 85 86 87 88 89 90 91 232 464 696 928 1160 1392 1624 1856 2088 2320 2324  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
SIDC14D120H6X1SA1 Infineon Technologies SIDC14D120H6.pdf Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC14D60C6 Infineon Technologies SIDC14D60C6.pdf Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60C6Y Infineon Technologies SIDC14D60C6.pdf Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60E6X1SA1 Infineon Technologies SIDC14D60E6_L4173M.pdf?folderId=db3a304412b407950112b435fcf26443&fileId=db3a304412b407950112b435fd706444 Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60E6YX1SA1 Infineon Technologies SIDC14D60E6_L4173M.pdf?folderId=db3a304412b407950112b435fcf26443&fileId=db3a304412b407950112b435fd706444 Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60F6X1SA2 Infineon Technologies SIDC14D60F6_L4174M.pdf?folderId=db3a304412b407950112b435f6ed6434&fileId=db3a304412b407950112b435f76a6435 Description: DIODE GP 600V 45A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC161D170HX1SA2 Infineon Technologies SIDC161D170H_L4511A.pdf?folderId=db3a304412b407950112b43873ed6aec&fileId=db3a304412b407950112b43874746aed Description: DIODE GP 1.7KV 300A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIDC16D60SIC3 Infineon Technologies SIDC16D60SIC3.pdf Description: DIODE SIL CARB 600V 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
SIDC19D60SIC3 Infineon Technologies SIDC19D60SIC3.pdf Description: DIODE SIL CARB 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
SIDC20D60C6 Infineon Technologies SIDC20D60C6.pdf Description: DIODE GP 600V 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC23D120E6 Infineon Technologies SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9 Description: DIODE GEN PURP 1.2KV 25A WAFER
товар відсутній
SIDC23D120F6 Infineon Technologies SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf Description: DIODE GEN PURP 1.2KV 25A WAFER
товар відсутній
SIDC23D120H6 Infineon Technologies SIDC23D120H6.pdf Description: DIODE GEN PURP 1.2KV 35A WAFER
товар відсутній
SIDC23D60E6 Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GEN PURP 600V 50A WAFER
товар відсутній
SIDC23D60E6Y Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GEN PURP 600V 50A WAFER
товар відсутній
SIDC24D30SIC3 Infineon Technologies SIDC24D30SIC3.pdf Description: DIODE SILICON 300V 10A WAFER
товар відсутній
SIDC26D60C6 Infineon Technologies SIDC26D60C6.pdf Description: DIODE GP 600V 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC30D120E6X1SA2 Infineon Technologies SIDC30D120E6_L4182P.pdf?folderId=db3a304412b407950112b435e06263fd&fileId=db3a304412b407950112b435e0e563fe Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC30D120F6X1SA2 Infineon Technologies SIDC30D120F6_L4185M.pdf?folderId=db3a304412b407950112b435613862d3&fileId=db3a304412b407950112b43561b262d4 Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC30D120H6X1SA4 Infineon Technologies SIDC30D120H6.pdf Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC30D60E6X1SA1 Infineon Technologies SIDC30D60E6_L4183M.pdf?folderId=db3a304412b407950112b436dd4466ec&fileId=db3a304412b407950112b436ddc466ed Description: DIODE GP 600V 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC32D170HX1SA3 Infineon Technologies SIDC32D170H_L4461A.pdf?folderId=db3a304412b407950112b4380a216a19&fileId=db3a304412b407950112b4380aa56a1a Description: DIODE GP 1.7KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIDC38D60C6 Infineon Technologies SIDC38D60C6.pdf Description: DIODE GEN PURP 600V 150A WAFER
товар відсутній
SIDC42D120E6 Infineon Technologies SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403 Description: DIODE GEN PURP 1.2KV 50A WAFER
товар відсутній
SIDC42D120F6 Infineon Technologies SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9 Description: DIODE GEN PURP 1.2KV 50A WAFER
товар відсутній
SIDC42D120H6 Infineon Technologies SIDC42D120H6.pdf Description: DIODE GEN PURP 1.2KV 75A WAFER
товар відсутній
SIDC42D170E6 Infineon Technologies SIDC42D170E6_L4241M.pdf?folderId=db3a304412b407950112b439a4c16e69&fileId=db3a304412b407950112b439a54e6e6a Description: DIODE GEN PURP 1.7KV 50A WAFER
товар відсутній
SIDC42D60E6X1SA1 Infineon Technologies SIDC42D60E6_L4193M.pdf?folderId=db3a304412b407950112b436df7766f1&fileId=db3a304412b407950112b436dff466f2 Description: DIODE GP 600V 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC46D170H Infineon Technologies SIDC46D170H_L4471A.pdf?folderId=db3a304412b407950112b43868fa6ad3&fileId=db3a304412b407950112b43869826ad4 Description: DIODE GEN PURP 1.7KV 75A WAFER
товар відсутній
SIDC50D60C6X1SA1 Infineon Technologies SIDC50D60C6.pdf Description: DIODE GP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC53D120H6 Infineon Technologies SIDC53D120H6.pdf Description: DIODE GEN PURP 1.2KV 100A WAFER
товар відсутній
SIDC56D120E6 Infineon Technologies SIDC56D120E6_L4222P.pdf?folderId=db3a304412b407950112b435e4d66407&fileId=db3a304412b407950112b435e5536408 Description: DIODE GEN PURP 1.2KV 75A WAFER
товар відсутній
SIDC56D120F6 Infineon Technologies SIDC56D120F6_L4225M.pdf?folderId=db3a304412b407950112b435d63b63e4&fileId=db3a304412b407950112b435d6b863e5 Description: DIODE GEN PURP 1.2KV 75A WAFER
товар відсутній
SIDC56D170E6 Infineon Technologies SIDC56D170E6_L4251N.pdf?folderId=db3a304412b407950112b439a6fc6e6e&fileId=db3a304412b407950112b439a7896e6f Description: DIODE GEN PURP 1.7KV 75A WAFER
товар відсутній
SIDC56D60E6 Infineon Technologies SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7 Description: DIODE GEN PURP 600V 150A WAFER
товар відсутній
SIDC59D170H Infineon Technologies SIDC59D170H_L4481A.pdf?folderId=db3a304412b407950112b4386b1f6ad8&fileId=db3a304412b407950112b4386ba56ad9 Description: DIODE GEN PURP 1.7KV 100A WAFER
товар відсутній
SIDC73D170E6 Infineon Technologies SIDC73D170E6_L4381N.pdf?folderId=db3a304412b407950112b439a93a6e73&fileId=db3a304412b407950112b439a9c76e74 Description: DIODE GEN PURP 1.7KV 100A WAFER
товар відсутній
SIDC78D170H Infineon Technologies SIDC78D170H_L4451A.pdf?folderId=db3a304412b407950112b4386d4a6add&fileId=db3a304412b407950112b4386dd46ade Description: DIODE GEN PURP 1.7KV 150A WAFER
товар відсутній
SIDC81D120E6X1SA4 Infineon Technologies SIDC81D120E6_L4202P.pdf?folderId=db3a304412b407950112b435e6cc640c&fileId=db3a304412b407950112b435e74a640d Description: DIODE GP 1.2KV 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC81D120F6X1SA1 Infineon Technologies SIDC81D120F6_L4205M.pdf?folderId=db3a304412b407950112b435d83f63e9&fileId=db3a304412b407950112b435d8bd63ea Description: DIODE GP 1.2KV 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC81D120H6X1SA2 Infineon Technologies SIDC81D120H6.pdf Description: DIODE GP 1.2KV 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC81D60E6X1SA3 Infineon Technologies SIDC81D60E6_L4203M.pdf?folderId=db3a304412b407950112b4374cdd67d0&fileId=db3a304412b407950112b4374d5867d1 Description: DIODE GP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC85D170HX1SA2 Infineon Technologies SIDC85D170H_L4491A.pdf?folderId=db3a304412b407950112b4386f9d6ae2&fileId=db3a304412b407950112b43870236ae3 Description: DIODE GP 1.7KV 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIPC06N60C3 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET COOL MOS 600V SAWED WAFER
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SIPC26N80C3 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET COOL MOS 600V SAWED WAFER
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SIPC69N50C3X1SA2 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET COOL MOS SAWED WAFER
Packaging: Bulk
Part Status: Active
товар відсутній
SIPC69N60CFD Infineon Technologies Description: MOSFET COOL MOS SAWED WAFER
товар відсутній
SLB9635TT12XUMA3 SLB9635TT12XUMA3 Infineon Technologies SLB%209635%20TT1.2.pdf Description: IC SECURITY TPM I2C 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Number of I/O: 2
DigiKey Programmable: Not Verified
товар відсутній
SLE 4428 C Infineon Technologies SLE4418,%20SLE4428.pdf Description: IC EEPROM 1KBYTE M2.2 PKG
товар відсутній
SLE 4428 M2.2 Infineon Technologies SLE4418,%20SLE4428.pdf Description: IC EEPROM 1KBYTE M2.2 PKG
товар відсутній
SLE 4432 C Infineon Technologies SLE4432,%20SLE4442.pdf Description: IC EEPROM 256BYTE CHIP
товар відсутній
SLE 4432 M3.2 Infineon Technologies SLE4432,%20SLE4442.pdf Description: IC EEPROM 256BYTE M3.2 PKG
товар відсутній
SLE 55R04 MCC2 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07692905ae&fileId=db3a304312bae05f0112beb2fcdd0123 Description: IC EEPROM 770BYTE MCC2-2
товар відсутній
SLE 55R04 P-MCC2-2-1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07692905ae&fileId=db3a304312bae05f0112beb2fcdd0123 Description: IC EEPROM 770BYTE MCC2-2
товар відсутній
SLE 66C321PE M5.1 Infineon Technologies SLE66C321PE.pdf Description: IC SECURITY CTRLR 8/16BIT M5.1
товар відсутній
SLE 66C321PE MFC5.6 Infineon Technologies SLE66C321PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
SLE 66C321PE MFC5.8 Infineon Technologies SLE66C321PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.8
товар відсутній
SLE 66C42P M5.1 Infineon Technologies SLE66C42P.pdf Description: IC SECURITY CTRLR 16BIT M5.1
товар відсутній
SLE 66C681PE M5.1 Infineon Technologies SLE66C681PE.pdf Description: IC SECURITY CTRLR 8/16BIT M5.1
товар відсутній
SLE 66C681PE MFC5.6 Infineon Technologies SLE66C681PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
SIDC14D120H6X1SA1 SIDC14D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC14D60C6 SIDC14D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60C6Y SIDC14D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60E6X1SA1 SIDC14D60E6_L4173M.pdf?folderId=db3a304412b407950112b435fcf26443&fileId=db3a304412b407950112b435fd706444
Виробник: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60E6YX1SA1 SIDC14D60E6_L4173M.pdf?folderId=db3a304412b407950112b435fcf26443&fileId=db3a304412b407950112b435fd706444
Виробник: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC14D60F6X1SA2 SIDC14D60F6_L4174M.pdf?folderId=db3a304412b407950112b435f6ed6434&fileId=db3a304412b407950112b435f76a6435
Виробник: Infineon Technologies
Description: DIODE GP 600V 45A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC161D170HX1SA2 SIDC161D170H_L4511A.pdf?folderId=db3a304412b407950112b43873ed6aec&fileId=db3a304412b407950112b43874746aed
Виробник: Infineon Technologies
Description: DIODE GP 1.7KV 300A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 300
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIDC16D60SIC3 SIDC16D60SIC3.pdf
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
SIDC19D60SIC3 SIDC19D60SIC3.pdf
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товар відсутній
SIDC20D60C6 SIDC20D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC23D120E6 SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
товар відсутній
SIDC23D120F6 SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
товар відсутній
SIDC23D120H6 SIDC23D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 35A WAFER
товар відсутній
SIDC23D60E6 SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A WAFER
товар відсутній
SIDC23D60E6Y SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A WAFER
товар відсутній
SIDC24D30SIC3 SIDC24D30SIC3.pdf
Виробник: Infineon Technologies
Description: DIODE SILICON 300V 10A WAFER
товар відсутній
SIDC26D60C6 SIDC26D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC30D120E6X1SA2 SIDC30D120E6_L4182P.pdf?folderId=db3a304412b407950112b435e06263fd&fileId=db3a304412b407950112b435e0e563fe
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC30D120F6X1SA2 SIDC30D120F6_L4185M.pdf?folderId=db3a304412b407950112b435613862d3&fileId=db3a304412b407950112b43561b262d4
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC30D120H6X1SA4 SIDC30D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC30D60E6X1SA1 SIDC30D60E6_L4183M.pdf?folderId=db3a304412b407950112b436dd4466ec&fileId=db3a304412b407950112b436ddc466ed
Виробник: Infineon Technologies
Description: DIODE GP 600V 75A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC32D170HX1SA3 SIDC32D170H_L4461A.pdf?folderId=db3a304412b407950112b4380a216a19&fileId=db3a304412b407950112b4380aa56a1a
Виробник: Infineon Technologies
Description: DIODE GP 1.7KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIDC38D60C6 SIDC38D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 150A WAFER
товар відсутній
SIDC42D120E6 SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
товар відсутній
SIDC42D120F6 SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 50A WAFER
товар відсутній
SIDC42D120H6 SIDC42D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A WAFER
товар відсутній
SIDC42D170E6 SIDC42D170E6_L4241M.pdf?folderId=db3a304412b407950112b439a4c16e69&fileId=db3a304412b407950112b439a54e6e6a
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 50A WAFER
товар відсутній
SIDC42D60E6X1SA1 SIDC42D60E6_L4193M.pdf?folderId=db3a304412b407950112b436df7766f1&fileId=db3a304412b407950112b436dff466f2
Виробник: Infineon Technologies
Description: DIODE GP 600V 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC46D170H SIDC46D170H_L4471A.pdf?folderId=db3a304412b407950112b43868fa6ad3&fileId=db3a304412b407950112b43869826ad4
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 75A WAFER
товар відсутній
SIDC50D60C6X1SA1 SIDC50D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 200 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC53D120H6 SIDC53D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 100A WAFER
товар відсутній
SIDC56D120E6 SIDC56D120E6_L4222P.pdf?folderId=db3a304412b407950112b435e4d66407&fileId=db3a304412b407950112b435e5536408
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A WAFER
товар відсутній
SIDC56D120F6 SIDC56D120F6_L4225M.pdf?folderId=db3a304412b407950112b435d63b63e4&fileId=db3a304412b407950112b435d6b863e5
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A WAFER
товар відсутній
SIDC56D170E6 SIDC56D170E6_L4251N.pdf?folderId=db3a304412b407950112b439a6fc6e6e&fileId=db3a304412b407950112b439a7896e6f
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 75A WAFER
товар відсутній
SIDC56D60E6 SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 150A WAFER
товар відсутній
SIDC59D170H SIDC59D170H_L4481A.pdf?folderId=db3a304412b407950112b4386b1f6ad8&fileId=db3a304412b407950112b4386ba56ad9
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 100A WAFER
товар відсутній
SIDC73D170E6 SIDC73D170E6_L4381N.pdf?folderId=db3a304412b407950112b439a93a6e73&fileId=db3a304412b407950112b439a9c76e74
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 100A WAFER
товар відсутній
SIDC78D170H SIDC78D170H_L4451A.pdf?folderId=db3a304412b407950112b4386d4a6add&fileId=db3a304412b407950112b4386dd46ade
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 150A WAFER
товар відсутній
SIDC81D120E6X1SA4 SIDC81D120E6_L4202P.pdf?folderId=db3a304412b407950112b435e6cc640c&fileId=db3a304412b407950112b435e74a640d
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC81D120F6X1SA1 SIDC81D120F6_L4205M.pdf?folderId=db3a304412b407950112b435d83f63e9&fileId=db3a304412b407950112b435d8bd63ea
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 100A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC81D120H6X1SA2 SIDC81D120H6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
товар відсутній
SIDC81D60E6X1SA3 SIDC81D60E6_L4203M.pdf?folderId=db3a304412b407950112b4374cdd67d0&fileId=db3a304412b407950112b4374d5867d1
Виробник: Infineon Technologies
Description: DIODE GP 600V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC85D170HX1SA2 SIDC85D170H_L4491A.pdf?folderId=db3a304412b407950112b4386f9d6ae2&fileId=db3a304412b407950112b43870236ae3
Виробник: Infineon Technologies
Description: DIODE GP 1.7KV 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
товар відсутній
SIPC06N60C3 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V SAWED WAFER
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SIPC26N80C3 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MOSFET COOL MOS 600V SAWED WAFER
Packaging: Bulk
Part Status: Obsolete
товар відсутній
SIPC69N50C3X1SA2 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MOSFET COOL MOS SAWED WAFER
Packaging: Bulk
Part Status: Active
товар відсутній
SIPC69N60CFD
Виробник: Infineon Technologies
Description: MOSFET COOL MOS SAWED WAFER
товар відсутній
SLB9635TT12XUMA3 SLB%209635%20TT1.2.pdf
SLB9635TT12XUMA3
Виробник: Infineon Technologies
Description: IC SECURITY TPM I2C 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Number of I/O: 2
DigiKey Programmable: Not Verified
товар відсутній
SLE 4428 C SLE4418,%20SLE4428.pdf
Виробник: Infineon Technologies
Description: IC EEPROM 1KBYTE M2.2 PKG
товар відсутній
SLE 4428 M2.2 SLE4418,%20SLE4428.pdf
Виробник: Infineon Technologies
Description: IC EEPROM 1KBYTE M2.2 PKG
товар відсутній
SLE 4432 C SLE4432,%20SLE4442.pdf
Виробник: Infineon Technologies
Description: IC EEPROM 256BYTE CHIP
товар відсутній
SLE 4432 M3.2 SLE4432,%20SLE4442.pdf
Виробник: Infineon Technologies
Description: IC EEPROM 256BYTE M3.2 PKG
товар відсутній
SLE 55R04 MCC2 dgdl?folderId=5546d4694909da4801490a07692905ae&fileId=db3a304312bae05f0112beb2fcdd0123
Виробник: Infineon Technologies
Description: IC EEPROM 770BYTE MCC2-2
товар відсутній
SLE 55R04 P-MCC2-2-1 dgdl?folderId=5546d4694909da4801490a07692905ae&fileId=db3a304312bae05f0112beb2fcdd0123
Виробник: Infineon Technologies
Description: IC EEPROM 770BYTE MCC2-2
товар відсутній
SLE 66C321PE M5.1 SLE66C321PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT M5.1
товар відсутній
SLE 66C321PE MFC5.6 SLE66C321PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
SLE 66C321PE MFC5.8 SLE66C321PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
товар відсутній
SLE 66C42P M5.1 SLE66C42P.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 16BIT M5.1
товар відсутній
SLE 66C681PE M5.1 SLE66C681PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT M5.1
товар відсутній
SLE 66C681PE MFC5.6 SLE66C681PE.pdf
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 81 82 83 84 85 86 87 88 89 90 91 232 464 696 928 1160 1392 1624 1856 2088 2320 2324  [ Наступна Сторінка >> ]