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CY9AFA44LAQN-G-AVE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
товару немає в наявності
CY9AFA42LAQN-G-AVE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
товару немає в наявності
CY9AF141LBPMC1-G-JNE2 CY9AF141LBPMC1-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF141LBPMC-G-JNE2 CY9AF141LBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF141MBPMC-G-JNE2 CY9AF141MBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF142LBPMC-G-JNE2 CY9AF142LBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF144MBPMC-G-JNE2 CY9AF144MBPMC-G-JNE2 Infineon Technologies Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
IPG20N06S2L65AAUMA1 Infineon Technologies Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-10
товару немає в наявності
IKQB160N75CP2AKSA1 IKQB160N75CP2AKSA1 Infineon Technologies Infineon-IKQB160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4a90491e68 Description: IGBT 750V 200A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72ns/324ns
Switching Energy: 9.7mJ (on), 5.2mJ (off)
Test Condition: 450V, 160A, 4.8Ohm, 15V
Gate Charge: 610 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
на замовлення 216 шт:
термін постачання 21-31 дні (днів)
1+1090.93 грн
30+ 850.33 грн
120+ 800.31 грн
CY9BF218SPMC-GK7CGE1 CY9BF218SPMC-GK7CGE1 Infineon Technologies Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378 Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
1+1126.24 грн
10+ 830.51 грн
60+ 719.65 грн
120+ 647.21 грн
240+ 624.03 грн
480+ 604.95 грн
ND104N12KHPSA1 Infineon Technologies INFNS29282-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 1.2KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
товару немає в наявності
IRF6724MTRPBF IRF6724MTRPBF Infineon Technologies irf6724mpbf.pdf?fileId=5546d462533600a4015355ed51a01a94 Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
товару немає в наявності
IPL60R065C7AUMA1 IPL60R065C7AUMA1 Infineon Technologies Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd Description: MOSFET HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+240.56 грн
Мінімальне замовлення: 3000
V7226150MHPSA1 V7226150MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a Description: CLAMP DISK DEVICES 58MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 2.677" (68.00mm)
Shape: Square
Type: Mount
Width: 2.677" (68.00mm)
Height: 3.150" (80.00mm)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8637.62 грн
CY9AF112NPMC-G-107E1 CY9AF112NPMC-G-107E1 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
IPB022N04LGATMA1 IPB022N04LGATMA1 Infineon Technologies IPB022N04L%20G.pdf Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
товару немає в наявності
IPB022N04LGATMA1 IPB022N04LGATMA1 Infineon Technologies IPB022N04L%20G.pdf Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
товару немає в наявності
IRAM136-1060BS IRAM136-1060BS Infineon Technologies IRAM136-1060BS.pdf Description: IC MOD PWR HYBRID 600V 5A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
PVT322PBF PVT322PBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 15188 шт:
термін постачання 21-31 дні (днів)
1+775.4 грн
10+ 652.05 грн
25+ 617.92 грн
50+ 556.75 грн
100+ 534.55 грн
250+ 506.55 грн
500+ 484.63 грн
IPT60T022S7XTMA1 IPT60T022S7XTMA1 Infineon Technologies Infineon-IPT60T022S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5965fd7aeb Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
товару немає в наявності
IPT60T022S7XTMA1 IPT60T022S7XTMA1 Infineon Technologies Infineon-IPT60T022S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5965fd7aeb Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
1+707.07 грн
10+ 491.03 грн
100+ 391.78 грн
40060455 Infineon Technologies Description: INFINEON
Packaging: Bulk
товару немає в наявності
40060455-001 Infineon Technologies Description: INFINEON
Packaging: Bulk
товару немає в наявності
40060431 Infineon Technologies Description: INFINEON
Packaging: Bulk
товару немає в наявності
CY8C4147AZQ-S475 CY8C4147AZQ-S475 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+348.54 грн
10+ 250.03 грн
25+ 228.56 грн
80+ 213.41 грн
S80KS5123GABHI023 S80KS5123GABHI023 Infineon Technologies Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795 Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
IAUCN04S7N020ATMA1 IAUCN04S7N020ATMA1 Infineon Technologies Infineon-IAUCN04S7N020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc5b071f5a Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Qualification: AEC-Q101
товару немає в наявності
IAUCN04S7N020ATMA1 IAUCN04S7N020ATMA1 Infineon Technologies Infineon-IAUCN04S7N020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc5b071f5a Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Qualification: AEC-Q101
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
4+88.29 грн
10+ 76.07 грн
25+ 72.18 грн
100+ 55.65 грн
250+ 52.01 грн
500+ 45.97 грн
Мінімальне замовлення: 4
CY8C4147LDSS563XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
AUIRG4BC30S-S AUIRG4BC30S-S Infineon Technologies auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513 Description: IGBT
Packaging: Bulk
на замовлення 23755 шт:
термін постачання 21-31 дні (днів)
182+115.8 грн
Мінімальне замовлення: 182
ACCESSORY34080NOSA1 Infineon Technologies Description: ACCESSORY IGBT MODULEE
Packaging: Bulk
товару немає в наявності
IPD90R1K2C3ATMA2 IPD90R1K2C3ATMA2 Infineon Technologies Infineon-IPD90R1K2C3-DS-v02_00-en.pdf?fileId=db3a30433f12d084013f13d4a88e0220 Description: MOSFET N-CH 900V 2.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 2646 шт:
термін постачання 21-31 дні (днів)
3+116.69 грн
10+ 93.3 грн
100+ 74.28 грн
500+ 58.99 грн
1000+ 50.05 грн
Мінімальне замовлення: 3
FZ800R45KL3B5NOSA2 FZ800R45KL3B5NOSA2 Infineon Technologies Infineon-FZ800R45KL3_B5-DS-v03_01-en_de.pdf?fileId=db3a30433ee50ba8013eea9f8ff51515 Description: IGBT MOD 4500V 1600A 9000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Parallel
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 9000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
1+134859.19 грн
S29GL512T11DHB013 S29GL512T11DHB013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
FF2MR12KM1HHPSA1 Infineon Technologies Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+47871.17 грн
10+ 44490.36 грн
FF2MR12KM1HP Infineon Technologies Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
товару немає в наявності
FF2MR12KM1H Infineon Technologies Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
товару немає в наявності
BGA824N6SE6327XTSA1 BGA824N6SE6327XTSA1 Infineon Technologies Description: RF SILICON MMIC
Packaging: Tape & Reel (TR)
товару немає в наявності
CY7C4235-15AXC CY7C4235-15AXC Infineon Technologies CY7C4425%2C4205%2C15%2C25%2C35%2C45.pdf Description: IC FIFO SYNC 2KX18 10NS 64TQFP
Packaging: Tube
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
товару немає в наявності
CG8171AA Infineon Technologies Description: SYNC
Packaging: Tray
товару немає в наявності
AUIRF1404STRL AUIRF1404STRL Infineon Technologies IRSDS11678-1.pdf?t.download=true&u=5oefqw Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
90+235.82 грн
Мінімальне замовлення: 90
AUIRF1404 AUIRF1404 Infineon Technologies IRSDS11678-1.pdf?t.download=true&u=5oefqw Description: AUIRF1404 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
48+444.97 грн
Мінімальне замовлення: 48
IFS100B17N3E4PB11BPSA1 Infineon Technologies Description: IGBT MOD 1700V 150A 600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
на замовлення 401 шт:
термін постачання 21-31 дні (днів)
2+12790.21 грн
Мінімальне замовлення: 2
FS100R12KE3BOSA1 Infineon Technologies INFNS28508-1.pdf?t.download=true&u=5oefqw Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
2+13886.13 грн
Мінімальне замовлення: 2
FS100R12N2T4BDLA1 Infineon Technologies Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
3+8945.73 грн
Мінімальне замовлення: 3
FS100R12N2T4BPSA1 Infineon Technologies InfineonFS100R12N2T4DSv0200EN.pdf Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
3+8994.09 грн
Мінімальне замовлення: 3
FS100R12N2T4B11BOSA1 Infineon Technologies Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038 Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
3+8994.09 грн
Мінімальне замовлення: 3
FS100R12KT4PB11BPSA1 Infineon Technologies Infineon-FS100R12KT4-DS-v02_00-en_jp.pdf?fileId=db3a30433de4e67f013dee01c0823771 Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
2+12330.73 грн
Мінімальне замовлення: 2
FS100R12N2T4PBPSA1 Infineon Technologies Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e Description: LOW POWER ECONO
Packaging: Bulk
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
2+13041.26 грн
Мінімальне замовлення: 2
FS100R12KT4GB11BOSA1 FS100R12KT4GB11BOSA1 Infineon Technologies Infineon-FS100R12KT4G_B11-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116191497ce1c8e Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
2+11193.74 грн
Мінімальне замовлення: 2
S29GL128S10DHI013 S29GL128S10DHI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
2200+275.58 грн
Мінімальне замовлення: 2200
S29GL128S10DHI013 S29GL128S10DHI013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
1+399.21 грн
10+ 350.86 грн
25+ 344.18 грн
50+ 320.66 грн
100+ 287.74 грн
250+ 286.65 грн
500+ 264.26 грн
1000+ 253.1 грн
S80KS5123GABHV023 S80KS5123GABHV023 Infineon Technologies Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795 Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
S80KS5123GABHA023 S80KS5123GABHA023 Infineon Technologies Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795 Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
S80KS5123GABHB023 S80KS5123GABHB023 Infineon Technologies Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795 Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
S80KS5123GABHM023 S80KS5123GABHM023 Infineon Technologies Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795 Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
TLE92464EDXUMA1 TLE92464EDXUMA1 Infineon Technologies Infineon-TLE92464ED-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178c67d63325b93 Description: TRANSMISSION_ICS PG-DSO-36
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 215mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 2.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1123 шт:
термін постачання 21-31 дні (днів)
1+938.15 грн
10+ 640.59 грн
25+ 572.89 грн
100+ 466.62 грн
250+ 432.23 грн
500+ 411.3 грн
TLE92464EDHPEVALBRDTOBO1 TLE92464EDHPEVALBRDTOBO1 Infineon Technologies Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+12866.98 грн
IRLL3303TRPBF IRLL3303TRPBF Infineon Technologies irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd description Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товару немає в наявності
IRLL3303TRPBF IRLL3303TRPBF Infineon Technologies irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd description Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товару немає в наявності
CY9AFA44LAQN-G-AVE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
товару немає в наявності
CY9AFA42LAQN-G-AVE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
товару немає в наявності
CY9AF141LBPMC1-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF141LBPMC1-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF141LBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF141LBPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF141MBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF141MBPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF142LBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF142LBPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF144MBPMC-G-JNE2 Infineon-CY9A140NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee002d66576&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF144MBPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
IPG20N06S2L65AAUMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-10
товару немає в наявності
IKQB160N75CP2AKSA1 Infineon-IKQB160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8779172a0187bc4a90491e68
IKQB160N75CP2AKSA1
Виробник: Infineon Technologies
Description: IGBT 750V 200A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72ns/324ns
Switching Energy: 9.7mJ (on), 5.2mJ (off)
Test Condition: 450V, 160A, 4.8Ohm, 15V
Gate Charge: 610 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
на замовлення 216 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1090.93 грн
30+ 850.33 грн
120+ 800.31 грн
CY9BF218SPMC-GK7CGE1 Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378
CY9BF218SPMC-GK7CGE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1126.24 грн
10+ 830.51 грн
60+ 719.65 грн
120+ 647.21 грн
240+ 624.03 грн
480+ 604.95 грн
ND104N12KHPSA1 INFNS29282-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
товару немає в наявності
IRF6724MTRPBF irf6724mpbf.pdf?fileId=5546d462533600a4015355ed51a01a94
IRF6724MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
товару немає в наявності
IPL60R065C7AUMA1 Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd
IPL60R065C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+240.56 грн
Мінімальне замовлення: 3000
V7226150MHPSA1 Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a
V7226150MHPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 2.677" (68.00mm)
Shape: Square
Type: Mount
Width: 2.677" (68.00mm)
Height: 3.150" (80.00mm)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8637.62 грн
CY9AF112NPMC-G-107E1
CY9AF112NPMC-G-107E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
товару немає в наявності
IPB022N04LGATMA1 IPB022N04L%20G.pdf
IPB022N04LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
товару немає в наявності
IPB022N04LGATMA1 IPB022N04L%20G.pdf
IPB022N04LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
товару немає в наявності
IRAM136-1060BS IRAM136-1060BS.pdf
IRAM136-1060BS
Виробник: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 5A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
товару немає в наявності
PVT322PBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 15188 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+775.4 грн
10+ 652.05 грн
25+ 617.92 грн
50+ 556.75 грн
100+ 534.55 грн
250+ 506.55 грн
500+ 484.63 грн
IPT60T022S7XTMA1 Infineon-IPT60T022S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5965fd7aeb
IPT60T022S7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
товару немає в наявності
IPT60T022S7XTMA1 Infineon-IPT60T022S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c5965fd7aeb
IPT60T022S7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+707.07 грн
10+ 491.03 грн
100+ 391.78 грн
40060455
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
товару немає в наявності
40060455-001
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
товару немає в наявності
40060431
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
товару немає в наявності
CY8C4147AZQ-S475 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4147AZQ-S475
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+348.54 грн
10+ 250.03 грн
25+ 228.56 грн
80+ 213.41 грн
S80KS5123GABHI023 Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795
S80KS5123GABHI023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
IAUCN04S7N020ATMA1 Infineon-IAUCN04S7N020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc5b071f5a
IAUCN04S7N020ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Qualification: AEC-Q101
товару немає в наявності
IAUCN04S7N020ATMA1 Infineon-IAUCN04S7N020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc5b071f5a
IAUCN04S7N020ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Qualification: AEC-Q101
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+88.29 грн
10+ 76.07 грн
25+ 72.18 грн
100+ 55.65 грн
250+ 52.01 грн
500+ 45.97 грн
Мінімальне замовлення: 4
CY8C4147LDSS563XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
AUIRG4BC30S-S auirg4bc30s-s.pdf?fileId=5546d462533600a4015355ba1a451513
AUIRG4BC30S-S
Виробник: Infineon Technologies
Description: IGBT
Packaging: Bulk
на замовлення 23755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
182+115.8 грн
Мінімальне замовлення: 182
ACCESSORY34080NOSA1
Виробник: Infineon Technologies
Description: ACCESSORY IGBT MODULEE
Packaging: Bulk
товару немає в наявності
IPD90R1K2C3ATMA2 Infineon-IPD90R1K2C3-DS-v02_00-en.pdf?fileId=db3a30433f12d084013f13d4a88e0220
IPD90R1K2C3ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 2.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
на замовлення 2646 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+116.69 грн
10+ 93.3 грн
100+ 74.28 грн
500+ 58.99 грн
1000+ 50.05 грн
Мінімальне замовлення: 3
FZ800R45KL3B5NOSA2 Infineon-FZ800R45KL3_B5-DS-v03_01-en_de.pdf?fileId=db3a30433ee50ba8013eea9f8ff51515
FZ800R45KL3B5NOSA2
Виробник: Infineon Technologies
Description: IGBT MOD 4500V 1600A 9000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Parallel
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 9000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+134859.19 грн
S29GL512T11DHB013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11DHB013
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
FF2MR12KM1HHPSA1
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MMHB
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+47871.17 грн
10+ 44490.36 грн
FF2MR12KM1HP
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
товару немає в наявності
FF2MR12KM1H
Виробник: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
NTC Thermistor: No
Supplier Device Package: AG-62MM
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
товару немає в наявності
BGA824N6SE6327XTSA1
BGA824N6SE6327XTSA1
Виробник: Infineon Technologies
Description: RF SILICON MMIC
Packaging: Tape & Reel (TR)
товару немає в наявності
CY7C4235-15AXC CY7C4425%2C4205%2C15%2C25%2C35%2C45.pdf
CY7C4235-15AXC
Виробник: Infineon Technologies
Description: IC FIFO SYNC 2KX18 10NS 64TQFP
Packaging: Tube
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 36K (2K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
товару немає в наявності
CG8171AA
Виробник: Infineon Technologies
Description: SYNC
Packaging: Tray
товару немає в наявності
AUIRF1404STRL IRSDS11678-1.pdf?t.download=true&u=5oefqw
AUIRF1404STRL
Виробник: Infineon Technologies
Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
90+235.82 грн
Мінімальне замовлення: 90
AUIRF1404 IRSDS11678-1.pdf?t.download=true&u=5oefqw
AUIRF1404
Виробник: Infineon Technologies
Description: AUIRF1404 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
48+444.97 грн
Мінімальне замовлення: 48
IFS100B17N3E4PB11BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 150A 600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
на замовлення 401 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+12790.21 грн
Мінімальне замовлення: 2
FS100R12KE3BOSA1 INFNS28508-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 111 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+13886.13 грн
Мінімальне замовлення: 2
FS100R12N2T4BDLA1 Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e
Виробник: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+8945.73 грн
Мінімальне замовлення: 3
FS100R12N2T4BPSA1 InfineonFS100R12N2T4DSv0200EN.pdf
Виробник: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+8994.09 грн
Мінімальне замовлення: 3
FS100R12N2T4B11BOSA1 Infineon-FS100R12N2T4-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163a6e8cdc61038
Виробник: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+8994.09 грн
Мінімальне замовлення: 3
FS100R12KT4PB11BPSA1 Infineon-FS100R12KT4-DS-v02_00-en_jp.pdf?fileId=db3a30433de4e67f013dee01c0823771
Виробник: Infineon Technologies
Description: FS100R12 - IGBT MODULE
Packaging: Bulk
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+12330.73 грн
Мінімальне замовлення: 2
FS100R12N2T4PBPSA1 Infineon-FS100R12N2T4P-DS-v02_00-JA.pdf?fileId=5546d462689a790c016939d85f626b3e
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+13041.26 грн
Мінімальне замовлення: 2
FS100R12KT4GB11BOSA1 Infineon-FS100R12KT4G_B11-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116191497ce1c8e
FS100R12KT4GB11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+11193.74 грн
Мінімальне замовлення: 2
S29GL128S10DHI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10DHI013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2200+275.58 грн
Мінімальне замовлення: 2200
S29GL128S10DHI013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10DHI013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+399.21 грн
10+ 350.86 грн
25+ 344.18 грн
50+ 320.66 грн
100+ 287.74 грн
250+ 286.65 грн
500+ 264.26 грн
1000+ 253.1 грн
S80KS5123GABHV023 Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795
S80KS5123GABHV023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
S80KS5123GABHA023 Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795
S80KS5123GABHA023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
S80KS5123GABHB023 Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795
S80KS5123GABHB023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
S80KS5123GABHM023 Infineon-S80KS5123_1.8_V_512-Mbit_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81228a00795
S80KS5123GABHM023
Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
TLE92464EDXUMA1 Infineon-TLE92464ED-DataSheet-v01_00-EN.pdf?fileId=5546d4627883d7e00178c67d63325b93
TLE92464EDXUMA1
Виробник: Infineon Technologies
Description: TRANSMISSION_ICS PG-DSO-36
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 215mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 2.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-36-72
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+938.15 грн
10+ 640.59 грн
25+ 572.89 грн
100+ 466.62 грн
250+ 432.23 грн
500+ 411.3 грн
TLE92464EDHPEVALBRDTOBO1 Infineon-Next-Generation-Solenoid-Driver-Evaluation-Kit-TLE92464ED-TLE92466ED-UserManual-v01_00-EN.pdf?fileId=5546d4627956d53f0179a35c55ba0baf
TLE92464EDHPEVALBRDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+12866.98 грн
IRLL3303TRPBF description irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd
IRLL3303TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товару немає в наявності
IRLL3303TRPBF description irll3303pbf.pdf?fileId=5546d462533600a4015356646e3a25dd
IRLL3303TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товару немає в наявності
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