Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (140125) > Сторінка 709 з 2336
Фото | Назва | Виробник | Інформація |
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FS3L25R12W2H3PB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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CY8C20247S-24LKXI | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 16K 16QFN Packaging: Tray Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Number of I/O: 13 DigiKey Programmable: Not Verified |
на замовлення 978 шт: термін постачання 21-31 дні (днів) |
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CY8C20247S-24LKXI | Infineon Technologies |
Description: IC CAPSENCE SMARTSENCE 16K 16QFN Packaging: Tray Package / Case: 16-UFQFN Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx7/S Program Memory Type: FLASH (16kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Number of I/O: 13 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY26114ZC | Infineon Technologies |
Description: IC CLOCK GENERATOR 16TSSOP Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 100MHz Type: Clock Generator, Fanout Distribution, Multiplexer Input: Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IDK16G120C5XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 1.2KV 40A TO263-1 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A Current - Reverse Leakage @ Vr: 80 µA @ 1200 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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FF900R17ME7WB11BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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IRG4IBC20FDPBF | Infineon Technologies |
Description: IGBT 600V 14.3A 34W TO220FP Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Supplier Device Package: TO-220AB Full-Pak Td (on/off) @ 25°C: 43ns/240ns Switching Energy: 250µJ (on), 640µJ (off) Test Condition: 480V, 9A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 14.3 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 64 A Power - Max: 34 W |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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FF1800R12IE5BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1800A 20MW Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V |
на замовлення 398 шт: термін постачання 21-31 дні (днів) |
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F3L15MR12W2M1B69BOMA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2BM-2 IGBT Type: Trench Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
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F3L15MR12W2M1B69BOMA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: Yes Supplier Device Package: AG-EASY2BM-2 IGBT Type: Trench Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V |
товару немає в наявності |
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FD300R12KS4HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 370A 1950W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1950 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
на замовлення 276 шт: термін постачання 21-31 дні (днів) |
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FF300R12ME3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 500A 1450W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
на замовлення 423 шт: термін постачання 21-31 дні (днів) |
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FF300R12ME3BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 500A 1450W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
товару немає в наявності |
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TDA16847 | Infineon Technologies |
Description: IC POWER SUPPLY CONTROLLER 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 125°C Voltage - Supply: 8V ~ 16V Applications: Power Supply Controller Supplier Device Package: PG-DIP-14-3 Current - Supply: 5 mA DigiKey Programmable: Not Verified |
на замовлення 775 шт: термін постачання 21-31 дні (днів) |
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IDW32G65C5BXKSA2 | Infineon Technologies |
Description: DIODE SIL CARB 650V 16A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 470pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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1EDI05I12AHXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GATE DVR DSO8-59 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Number of Channels: 1 Voltage - Output Supply: 13V ~ 35V |
товару немає в наявності |
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1EDI05I12AHXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GATE DVR DSO8-59 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Supplier Device Package: PG-DSO-8-59 Rise / Fall Time (Typ): 10ns, 9ns Number of Channels: 1 Voltage - Output Supply: 13V ~ 35V |
товару немає в наявності |
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1EDI30J12CPXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GATE DVR DSO19-4 Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: Magnetic Coupling Current - Output High, Low: 4A, 4A Supplier Device Package: PG-DSO-19-4 Rise / Fall Time (Typ): 23ns, 22ns Number of Channels: 1 Voltage - Output Supply: 4.75V ~ 17.5V |
на замовлення 46670 шт: термін постачання 21-31 дні (днів) |
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1EDI3051EVALBOARDTOBO2 | Infineon Technologies |
Description: EICEDRIVER GATE DRIVER EVALUATIO Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDI305xAS Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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1EDI303XASEVALBOARDTOBO1 | Infineon Technologies |
Description: 1EDI303XAS EVALBOARD Packaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDI303xAS Supplied Contents: Board(s) Primary Attributes: Isolated Embedded: No |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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1EDI3050EVALBOARDTOBO1 | Infineon Technologies |
Description: EICEDRIVER GATE DRIVER EVALUATIO Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: 1EDI305xAS Supplied Contents: Board(s) Primary Attributes: Isolated Secondary Attributes: On-Board LEDs, Test Points Embedded: No |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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1EDI3050ASXUMA1 | Infineon Technologies |
Description: ISOLATED_HVGD Packaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
товару немає в наявності |
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1EDI3050ASXUMA1 | Infineon Technologies |
Description: ISOLATED_HVGD Packaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
на замовлення 724 шт: термін постачання 21-31 дні (днів) |
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1EDI3051ASXUMA1 | Infineon Technologies |
Description: ISOLATED_HVGD Packaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
товару немає в наявності |
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1EDI3051ASXUMA1 | Infineon Technologies |
Description: ISOLATED_HVGD Packaging: Cut Tape (CT) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Current - Peak Output: 20A Technology: Capacitive Coupling Current - Output High, Low: 20A, 20A Voltage - Isolation: 8000Vpk Approval Agency: IEC/EN/DIN, UL Supplier Device Package: PG-DSO-36-85 Rise / Fall Time (Typ): 35ns, 45ns (Max) Common Mode Transient Immunity (Min): 150kV/µs Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Pulse Width Distortion (Max): 20ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V Qualification: AEC-Q100 |
товару немає в наявності |
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ITD50N04S4L07ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 50A TO252-5 Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 18µA Supplier Device Package: PG-TO252-5-311 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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IRS2336DJPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCC Packaging: Tube Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
товару немає в наявності |
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DZ950N44KHPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4.4KV 950A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 950A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 4400 V Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A Current - Reverse Leakage @ Vr: 100 mA @ 4400 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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DZ950N44KS02HPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4.4KV 950A PB70-1 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 950A Supplier Device Package: BG-PB70-1 Operating Temperature - Junction: 160°C (Max) Voltage - DC Reverse (Vr) (Max): 4400 V Current - Reverse Leakage @ Vr: 100 mA @ 4400 V |
товару немає в наявності |
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CY8C20524-12PVXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Verified |
товару немає в наявності |
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MB39A112PFT-G-BND-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 250kHz ~ 2.6MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 7V ~ 25V Supplier Device Package: 20-TSSOP Synchronous Rectifier: No Control Features: Soft Start Output Phases: 1 Duty Cycle (Max): 100% Clock Sync: No Number of Outputs: 3 |
товару немає в наявності |
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MB39A135PFT-G-JN-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 780kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Supplier Device Package: 16-TSSOP Synchronous Rectifier: Yes Control Features: Current Limit, Power Good, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 1 |
товару немає в наявності |
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MB39A135PFT-G-JN-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 100kHz ~ 780kHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Supplier Device Package: 16-TSSOP Synchronous Rectifier: Yes Control Features: Current Limit, Power Good, Soft Start Output Phases: 1 Clock Sync: No Number of Outputs: 1 |
товару немає в наявності |
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MB39A134PFT-G-BND-ERE1 | Infineon Technologies |
Description: IC BATT PWR LI-ION 2-4C 24TSSOP Packaging: Tape & Reel (TR) Package / Case: 24-TFSOP (0.173", 4.40mm Width) Number of Cells: 2 ~ 4 Mounting Type: Surface Mount Function: Power Management Operating Temperature: -30°C ~ 85°C (TA) Battery Chemistry: Lithium Ion Supplier Device Package: 24-TSSOP Fault Protection: Over Temperature, Under Voltage |
товару немає в наявності |
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IPP027N08N5XKSA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 154µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V |
товару немає в наявності |
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EVAL1ED3142MU12FSICTOBO1 | Infineon Technologies |
Description: EVAL BRD FOR EICEDRIVER Packaging: Bulk |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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CY7C1020B-12VXC | Infineon Technologies |
Description: IC SRAM 512KBIT PARALLEL 44SOJ Packaging: Tube Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 32K x 16 DigiKey Programmable: Not Verified |
на замовлення 2047 шт: термін постачання 21-31 дні (днів) |
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CY7S1049G30-10VXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 36SOJ Packaging: Bulk Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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CY7S1049G30-10VXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 36SOJ Packaging: Tube Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY7S1049GE30-10VXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 36SOJ Packaging: Bulk Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 220 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90TFA020 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 56TSOP Packaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY8C21534-12PVXE | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Verified |
товару немає в наявності |
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FF1800XTR17T2P5PBPSA1 | Infineon Technologies |
Description: XHP LV Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1800000 W Current - Collector Cutoff (Max): 10 mA Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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IPI80N08S406AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 80A TO262-3 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5908 шт: термін постачання 21-31 дні (днів) |
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IPP70N04S406AKSA1 | Infineon Technologies |
Description: MOSFET_(20V,40V) Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V |
на замовлення 49890 шт: термін постачання 21-31 дні (днів) |
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IPP47N10SL26AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 47A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IPP339N20NM6AKSA1 | Infineon Technologies |
Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 52µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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S26KS512SDABHB030 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Bulk Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Grade: Automotive Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 848 шт: термін постачання 21-31 дні (днів) |
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S26KS512SDABHB030 | Infineon Technologies |
Description: IC FLASH 512MBIT PAR 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Grade: Automotive Memory Interface: Parallel Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
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CY9AFA42MAPMC-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 80LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 66 DigiKey Programmable: Not Verified |
на замовлення 1188 шт: термін постачання 21-31 дні (днів) |
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CY9AF141NBPMC-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 83 DigiKey Programmable: Not Verified |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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CY9AFB44NBBGL-GE1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLSH 112PFBGA Packaging: Tray Package / Case: 112-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 112-PFBGA (10x10) Number of I/O: 83 DigiKey Programmable: Not Verified |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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CY9AFA44MBBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY9AF144MBBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY9AFA41MBBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 96KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY9AFA44MABGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY9AF144MBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY9AFA42MABGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY9AFA42LBQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 64QFN Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 51 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY9AFA44LBQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 64QFN Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 51 DigiKey Programmable: Not Verified |
товару немає в наявності |
FS3L25R12W2H3PB11BPSA1 |
на замовлення 18 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6177.84 грн |
18+ | 5430.3 грн |
CY8C20247S-24LKXI |
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
на замовлення 978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.08 грн |
CY8C20247S-24LKXI |
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC CAPSENCE SMARTSENCE 16K 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
товару немає в наявності
CY26114ZC |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock Generator, Fanout Distribution, Multiplexer
Input: Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
IDK16G120C5XTMA1 |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 40A TO263-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 80 µA @ 1200 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 317.75 грн |
FF900R17ME7WB11BPSA1 |
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93800 pF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 31801.26 грн |
12+ | 29702.22 грн |
IRG4IBC20FDPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 14.3A 34W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
Description: IGBT 600V 14.3A 34W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 250µJ (on), 640µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 14.3 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 64 A
Power - Max: 34 W
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
187+ | 114.14 грн |
FF1800R12IE5BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
на замовлення 398 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 81012.86 грн |
F3L15MR12W2M1B69BOMA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
Description: LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
на замовлення 51 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 10412.07 грн |
F3L15MR12W2M1B69BOMA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 5.52 nF @ 800 V
товару немає в наявності
FD300R12KS4HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MOD 1200V 370A 1950W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1950 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
на замовлення 276 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 12884.64 грн |
FF300R12ME3BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MOD 1200V 500A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
на замовлення 423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 13450.45 грн |
FF300R12ME3BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 500A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MOD 1200V 500A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
товару немає в наявності
TDA16847 |
Виробник: Infineon Technologies
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
Description: IC POWER SUPPLY CONTROLLER 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8V ~ 16V
Applications: Power Supply Controller
Supplier Device Package: PG-DIP-14-3
Current - Supply: 5 mA
DigiKey Programmable: Not Verified
на замовлення 775 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
424+ | 50.15 грн |
IDW32G65C5BXKSA2 |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 955.81 грн |
10+ | 810.92 грн |
240+ | 679.4 грн |
1EDI05I12AHXUMA1 |
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
товару немає в наявності
1EDI05I12AHXUMA1 |
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
Description: DIGITAL ISO 1CH GATE DVR DSO8-59
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-59
Rise / Fall Time (Typ): 10ns, 9ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 35V
товару немає в наявності
1EDI30J12CPXUMA1 |
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
Description: DIGITAL ISO 1CH GATE DVR DSO19-4
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Supplier Device Package: PG-DSO-19-4
Rise / Fall Time (Typ): 23ns, 22ns
Number of Channels: 1
Voltage - Output Supply: 4.75V ~ 17.5V
на замовлення 46670 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
120+ | 180.42 грн |
1EDI3051EVALBOARDTOBO2 |
Виробник: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 9769.23 грн |
1EDI303XASEVALBOARDTOBO1 |
Виробник: Infineon Technologies
Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
Description: 1EDI303XAS EVALBOARD
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI303xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Embedded: No
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10235.24 грн |
1EDI3050EVALBOARDTOBO1 |
Виробник: Infineon Technologies
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Description: EICEDRIVER GATE DRIVER EVALUATIO
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1EDI305xAS
Supplied Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10137.74 грн |
1EDI3050ASXUMA1 |
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
товару немає в наявності
1EDI3050ASXUMA1 |
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
на замовлення 724 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 465.24 грн |
10+ | 404.68 грн |
25+ | 385.82 грн |
100+ | 314.38 грн |
250+ | 300.26 грн |
500+ | 273.76 грн |
1EDI3051ASXUMA1 |
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
товару немає в наявності
1EDI3051ASXUMA1 |
Виробник: Infineon Technologies
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
Description: ISOLATED_HVGD
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Capacitive Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 8000Vpk
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: PG-DSO-36-85
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Pulse Width Distortion (Max): 20ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 4.55V ~ 5.5V, 14V ~ 21.5V
Qualification: AEC-Q100
товару немає в наявності
ITD50N04S4L07ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 50A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 40V 50A TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 18µA
Supplier Device Package: PG-TO252-5-311
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
IRS2336DJPBF |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товару немає в наявності
DZ950N44KHPSA1 |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.4KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4400 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Description: DIODE GEN PURP 4.4KV 950A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 4400 V
Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 52799.16 грн |
DZ950N44KS02HPSA1 |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.4KV 950A PB70-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: BG-PB70-1
Operating Temperature - Junction: 160°C (Max)
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
Description: DIODE GEN PURP 4.4KV 950A PB70-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 950A
Supplier Device Package: BG-PB70-1
Operating Temperature - Junction: 160°C (Max)
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
товару немає в наявності
CY8C20524-12PVXI |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
MB39A112PFT-G-BND-ERE1 |
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 2.6MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 20-TSSOP
Synchronous Rectifier: No
Control Features: Soft Start
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Number of Outputs: 3
Description: IC REG CTRLR BUCK 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 2.6MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: 20-TSSOP
Synchronous Rectifier: No
Control Features: Soft Start
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: No
Number of Outputs: 3
товару немає в наявності
MB39A135PFT-G-JN-ERE1 |
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
товару немає в наявності
MB39A135PFT-G-JN-ERE1 |
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
Description: IC REG CTRLR BUCK 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
товару немає в наявності
MB39A134PFT-G-BND-ERE1 |
Виробник: Infineon Technologies
Description: IC BATT PWR LI-ION 2-4C 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Number of Cells: 2 ~ 4
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature, Under Voltage
Description: IC BATT PWR LI-ION 2-4C 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Number of Cells: 2 ~ 4
Mounting Type: Surface Mount
Function: Power Management
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 24-TSSOP
Fault Protection: Over Temperature, Under Voltage
товару немає в наявності
IPP027N08N5XKSA1 |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
товару немає в наявності
EVAL1ED3142MU12FSICTOBO1 |
на замовлення 12 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6335.99 грн |
CY7C1020B-12VXC |
Виробник: Infineon Technologies
Description: IC SRAM 512KBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 512KBIT PARALLEL 44SOJ
Packaging: Tube
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
на замовлення 2047 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
202+ | 105.63 грн |
CY7S1049G30-10VXI |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 563.58 грн |
CY7S1049G30-10VXI |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
CY7S1049GE30-10VXI |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Bulk
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 589.82 грн |
S29GL256S90TFA020 |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
CY8C21534-12PVXE |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
товару немає в наявності
FF1800XTR17T2P5PBPSA1 |
Виробник: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1800000 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 91746.36 грн |
IPI80N08S406AKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5908 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
96+ | 221.08 грн |
IPP70N04S406AKSA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
Description: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
на замовлення 49890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
304+ | 67.77 грн |
IPP47N10SL26AKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 100V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
500+ | 43.79 грн |
IPP339N20NM6AKSA1 |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 230.32 грн |
50+ | 121.61 грн |
100+ | 111.42 грн |
500+ | 87.82 грн |
S26KS512SDABHB030 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 848 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 899.96 грн |
S26KS512SDABHB030 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 512MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
CY9AFA42MAPMC-G-MNE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 240.3 грн |
10+ | 169.22 грн |
25+ | 153.62 грн |
119+ | 126.48 грн |
238+ | 120.79 грн |
476+ | 120.74 грн |
CY9AF141NBPMC-G-JNE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 679.43 грн |
10+ | 590.76 грн |
25+ | 563.31 грн |
90+ | 459 грн |
270+ | 438.38 грн |
450+ | 399.7 грн |
CY9AFB44NBBGL-GE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLSH 112PFBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 793.82 грн |
10+ | 690.64 грн |
25+ | 658.53 грн |
CY9AFA44MBBGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF144MBBGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AFA41MBBGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AFA44MABGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AF144MBGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AFA42MABGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AFA42LBQN-G-AVE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності
CY9AFA44LBQN-G-AVE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
DigiKey Programmable: Not Verified
товару немає в наявності