Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (138838) > Сторінка 678 з 2314
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IAUZ40N08S5N100ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 80A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 4835 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TT600N16KOFTIMHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 600 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.6 kV |
товар відсутній |
||||||||||||||||||||
IPA60R600P7SE8228XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 21W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
IRF8714TRPBFXTMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) |
на замовлення 3490 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
ISZ106N12LM6ATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V |
товар відсутній |
||||||||||||||||||||
ISZ106N12LM6ATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V |
на замовлення 3631 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
IPG20N04S409AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 4V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||||||||||||||||||||
IPG20N04S409AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 4V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
IPG20N04S408BATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||||||||||||||||||||
IPG20N04S408BATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4668 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
D8320N04TVFXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 400V 8320A Packaging: Tray Package / Case: DO-200AD Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8320A Operating Temperature - Junction: -25°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A Current - Reverse Leakage @ Vr: 100 mA @ 400 V |
товар відсутній |
||||||||||||||||||||
IRF7313TRPBFXTMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6.5A 8DSO-902 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PG-DSO-8-902 |
на замовлення 6589 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
IR2161PBF | Infineon Technologies |
Description: IC HALOGEN CNTRL 70KHZ 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Frequency: 34kHz ~ 70kHz Type: Halogen Controller Operating Temperature: -25°C ~ 125°C Voltage - Supply: 11.5V ~ 16.5V Supplier Device Package: 8-PDIP Dimming: Yes Current - Supply: 10 mA |
товар відсутній |
||||||||||||||||||||
KP108-PS | Infineon Technologies |
Description: AUTOMOTIVE PRESSURE SENSOR Packaging: Bulk |
на замовлення 761 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
KP109P3XTMA1 | Infineon Technologies |
Description: KP109 MULTI-PROTOCOL PRESSURE SE Packaging: Bulk |
на замовлення 15630 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
KP109P4XTMA1 | Infineon Technologies |
Description: KP109 MULTI-PROTOCOL PRESSURE SE Packaging: Bulk |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
KP108PSXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE PRESSURE SENSOR Packaging: Bulk |
на замовлення 6569 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CY8C3866LTI-030T | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||||
CY8C3866AXA-035 | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||||
CY7C1021B-15ZXC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 44TSOP II Packaging: Bag Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||||
CY7C185-25PC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 28DIP Packaging: Tube Package / Case: 28-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-PDIP Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||||
CY7C199CN-15PXC | Infineon Technologies |
Description: IC SRAM 256KBIT PARALLEL 28DIP Packaging: Tube Package / Case: 28-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-PDIP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||||
IMZA120R030M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 25.6A, 18V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 11mA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V |
товар відсутній |
||||||||||||||||||||
IRG4BC40FPBF | Infineon Technologies |
Description: IGBT 600V 49A 160W TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 26ns/240ns Switching Energy: 370µJ (on), 1.81mJ (off) Test Condition: 480V, 27A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 49 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 196 A Power - Max: 160 W |
товар відсутній |
||||||||||||||||||||
S25FL256SAGMFVG01 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||||
IR1169STRPBF | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 11V ~ 19V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 2V, 2.25V Current - Peak Output (Source, Sink): 1A, 4A DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
IR1169STRPBF | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 11V ~ 19V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 2V, 2.25V Current - Peak Output (Source, Sink): 1A, 4A DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
IDH10G65C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 10A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 340 µA @ 650 V |
товар відсутній |
||||||||||||||||||||
EVAL2KWZVSFBCFD7TOBO1 | Infineon Technologies |
Description: 2000W ZVS FULL BRIDGE EVAL Packaging: Bulk Voltage - Output: 45V ~ 56V Voltage - Input: 350V ~ 420V Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE3RBR4765JZ Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Isolated Power - Output: 2 kW |
товар відсутній |
||||||||||||||||||||
CYPAS212A132LQXQXQLA1 | Infineon Technologies |
Description: EZ-PD PAG2S-AC INTEGRATED USB PD Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 1028 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPAS213A124SXQXLXA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tray Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 24-SOIC Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 1040 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPAS213A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
товар відсутній |
||||||||||||||||||||
CYPAS213A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPAS213A124SXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 24-SOIC Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPAS213A124SXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Cut Tape (CT) Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 24-SOIC Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPAS211A132LQXQXQLA1 | Infineon Technologies |
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 1040 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPAS212A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-AC INTEGRATED USB PD Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
товар відсутній |
||||||||||||||||||||
CYPAS212A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-AC INTEGRATED USB PD Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPAS213A132LQXQXQLA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
на замовлення 1040 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
PXC1331CPNG003XTMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER PG-VQFN-4 Packaging: Cut Tape (CT) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CHL8510CRT | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 10DFN Packaging: Bulk Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 10.8V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 35 V Supplier Device Package: 10-DFN (3x3) Rise / Fall Time (Typ): 21ns, 18ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 1V Current - Peak Output (Source, Sink): 3A, 4A DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CYPD2119-24LQXI | Infineon Technologies |
Description: IC USB TYPE C 1-PORT 24QFN Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 5.5V Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 14 DigiKey Programmable: Not Verified |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
1EDI20I12SVXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 5KV 1CH GATE DVR Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Number of Channels: 1 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
1EDI20I12SVXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 5KV 1CH GATE DVR Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Number of Channels: 1 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
TT61N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 120A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 76 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 120 A Voltage - Off State: 1.4 kV |
товар відсутній |
||||||||||||||||||||
SABC541U1ENCA | Infineon Technologies |
Description: LEGACY 8-BIT MCU Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 38428 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
SAB-C-541U-1EN | Infineon Technologies |
Description: LEGACY 8-BIT MCU Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CY8C4127LCE-HV423 | Infineon Technologies |
Description: PSoC4 Packaging: Tray DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||||
CY7C1041G30-10VXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44SOJ Packaging: Tape & Reel (TR) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CY7C1041G30-10VXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44SOJ Packaging: Cut Tape (CT) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 920 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CY7C1041G30-10ZSXAT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
CY7C1041G30-10ZSXAT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Cut Tape (CT) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
ICL8001GXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -25°C ~ 125°C (TJ) Applications: Lighting Internal Switch(s): No Topology: Flyback Supplier Device Package: PG-DSO-8 Dimming: PWM Voltage - Supply (Min): 9.8V Voltage - Supply (Max): 26V |
товар відсутній |
||||||||||||||||||||
ICL8001GXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -25°C ~ 125°C (TJ) Applications: Lighting Internal Switch(s): No Topology: Flyback Supplier Device Package: PG-DSO-8 Dimming: PWM Voltage - Supply (Min): 9.8V Voltage - Supply (Max): 26V |
товар відсутній |
||||||||||||||||||||
IAUCN04S7N004ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
IAUCN04S7N004ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 6183 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
FZ1000R12KF5NDSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 1000A Packaging: Tray |
товар відсутній |
||||||||||||||||||||
CYW920822M2P4TAI040-EVK | Infineon Technologies |
Description: EVAL KIT FOR CYW20822-P4TAI040 Packaging: Bulk For Use With/Related Products: CYW20822–P4TAI040 Type: Transceiver; Bluetooth® 5 Supplied Contents: Board(s) |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||||
FZ1600R17HP4B21BOSA2 | Infineon Technologies |
Description: IGBT MODULE 1700V 1600A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 130 nF @ 25 V |
товар відсутній |
||||||||||||||||||||
FD16001200R17HP4B2BOSA2 | Infineon Technologies |
Description: IGBT MODULE VCES 1700V 1600A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual Brake Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A NTC Thermistor: No Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 130 nF @ 25 V |
товар відсутній |
IAUZ40N08S5N100ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4835 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 131.67 грн |
10+ | 80.98 грн |
100+ | 54.63 грн |
500+ | 40.65 грн |
1000+ | 37.23 грн |
2000+ | 34.35 грн |
TT600N16KOFTIMHPSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
товар відсутній
IPA60R600P7SE8228XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.94 грн |
10+ | 66.49 грн |
100+ | 44.35 грн |
IRF8714TRPBFXTMA1 |
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.75 грн |
10+ | 41.81 грн |
100+ | 27.3 грн |
500+ | 19.76 грн |
1000+ | 17.87 грн |
2000+ | 16.27 грн |
ISZ106N12LM6ATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
товар відсутній
ISZ106N12LM6ATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
на замовлення 3631 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 185.75 грн |
10+ | 115.7 грн |
100+ | 79.52 грн |
500+ | 60.06 грн |
1000+ | 55.37 грн |
2000+ | 51.43 грн |
IPG20N04S409AATMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPG20N04S409AATMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.37 грн |
10+ | 84.3 грн |
100+ | 65.56 грн |
500+ | 52.15 грн |
1000+ | 42.48 грн |
2000+ | 39.99 грн |
IPG20N04S408BATMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPG20N04S408BATMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4668 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 172.42 грн |
10+ | 106.94 грн |
100+ | 73.09 грн |
500+ | 54.95 грн |
1000+ | 50.56 грн |
2000+ | 46.86 грн |
D8320N04TVFXPSA1 |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 400V 8320A
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8320A
Operating Temperature - Junction: -25°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 400 V
Description: DIODE GEN PURP 400V 8320A
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8320A
Operating Temperature - Junction: -25°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 400 V
товар відсутній
IRF7313TRPBFXTMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.5A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
Description: MOSFET 2N-CH 30V 6.5A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
на замовлення 6589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 61.92 грн |
10+ | 51.7 грн |
100+ | 35.79 грн |
500+ | 28.06 грн |
1000+ | 23.88 грн |
2000+ | 21.27 грн |
IR2161PBF |
Виробник: Infineon Technologies
Description: IC HALOGEN CNTRL 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 34kHz ~ 70kHz
Type: Halogen Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.5V
Supplier Device Package: 8-PDIP
Dimming: Yes
Current - Supply: 10 mA
Description: IC HALOGEN CNTRL 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 34kHz ~ 70kHz
Type: Halogen Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.5V
Supplier Device Package: 8-PDIP
Dimming: Yes
Current - Supply: 10 mA
товар відсутній
KP108-PS |
на замовлення 761 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
151+ | 148.36 грн |
KP109P3XTMA1 |
на замовлення 15630 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
116+ | 187.47 грн |
KP109P4XTMA1 |
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
116+ | 187.47 грн |
KP108PSXTMA1 |
на замовлення 6569 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
116+ | 187.47 грн |
CY8C3866LTI-030T |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
товар відсутній
CY8C3866AXA-035 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
товар відсутній
CY7C1021B-15ZXC |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
товар відсутній
CY7C185-25PC |
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C199CN-15PXC |
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
IMZA120R030M1HXKSA1 |
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 25.6A, 18V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 11mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 25.6A, 18V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 11mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V
товар відсутній
IRG4BC40FPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 49A 160W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
Description: IGBT 600V 49A 160W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
товар відсутній
S25FL256SAGMFVG01 |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товар відсутній
IR1169STRPBF |
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 83.05 грн |
IR1169STRPBF |
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 181.83 грн |
10+ | 156.98 грн |
25+ | 148.11 грн |
100+ | 118.41 грн |
250+ | 111.19 грн |
500+ | 97.29 грн |
1000+ | 79.29 грн |
IDH10G65C5XKSA1 |
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 340 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 340 µA @ 650 V
товар відсутній
EVAL2KWZVSFBCFD7TOBO1 |
Виробник: Infineon Technologies
Description: 2000W ZVS FULL BRIDGE EVAL
Packaging: Bulk
Voltage - Output: 45V ~ 56V
Voltage - Input: 350V ~ 420V
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE3RBR4765JZ
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Power - Output: 2 kW
Description: 2000W ZVS FULL BRIDGE EVAL
Packaging: Bulk
Voltage - Output: 45V ~ 56V
Voltage - Input: 350V ~ 420V
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE3RBR4765JZ
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Isolated
Power - Output: 2 kW
товар відсутній
CYPAS212A132LQXQXQLA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 1028 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 225.72 грн |
10+ | 195.55 грн |
25+ | 184.88 грн |
80+ | 150.35 грн |
230+ | 142.64 грн |
490+ | 127.99 грн |
980+ | 106.18 грн |
CYPAS213A124SXQXLXA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.26 грн |
10+ | 180.83 грн |
31+ | 171.01 грн |
93+ | 139.07 грн |
248+ | 131.95 грн |
465+ | 118.39 грн |
961+ | 98.21 грн |
CYPAS213A132LQXQTXUMA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
товар відсутній
CYPAS213A132LQXQTXUMA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.26 грн |
10+ | 180.83 грн |
25+ | 170.99 грн |
100+ | 139.08 грн |
250+ | 131.95 грн |
500+ | 118.39 грн |
1000+ | 98.21 грн |
CYPAS213A124SXQTXUMA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 110.49 грн |
2000+ | 101.08 грн |
CYPAS213A124SXQTXUMA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.26 грн |
10+ | 180.83 грн |
25+ | 170.99 грн |
100+ | 139.08 грн |
250+ | 131.95 грн |
500+ | 118.39 грн |
CYPAS211A132LQXQXQLA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 235.91 грн |
10+ | 203.7 грн |
25+ | 192.57 грн |
80+ | 156.62 грн |
230+ | 148.58 грн |
490+ | 133.33 грн |
980+ | 110.6 грн |
CYPAS212A132LQXQTXUMA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
товар відсутній
CYPAS212A132LQXQTXUMA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 317.42 грн |
10+ | 202.64 грн |
25+ | 175.82 грн |
100+ | 136.8 грн |
250+ | 123.09 грн |
500+ | 114.73 грн |
1000+ | 106.02 грн |
CYPAS213A132LQXQXQLA1 |
Виробник: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
на замовлення 1040 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.26 грн |
10+ | 180.83 грн |
25+ | 170.99 грн |
80+ | 139.08 грн |
230+ | 131.95 грн |
490+ | 118.39 грн |
980+ | 98.21 грн |
PXC1331CPNG003XTMA1 |
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Cut Tape (CT)
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Cut Tape (CT)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 383.25 грн |
10+ | 331.17 грн |
25+ | 313.12 грн |
100+ | 254.69 грн |
250+ | 241.63 грн |
500+ | 216.81 грн |
1000+ | 179.86 грн |
CHL8510CRT |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 21ns, 18ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 1V
Current - Peak Output (Source, Sink): 3A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 21ns, 18ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 1V
Current - Peak Output (Source, Sink): 3A, 4A
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
640+ | 33.09 грн |
CYPD2119-24LQXI |
Виробник: Infineon Technologies
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 144.99 грн |
10+ | 125.43 грн |
25+ | 118.28 грн |
80+ | 94.58 грн |
230+ | 88.82 грн |
490+ | 77.71 грн |
980+ | 63.33 грн |
2450+ | 58.97 грн |
4900+ | 56.78 грн |
1EDI20I12SVXUMA1 |
Виробник: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 311.27 грн |
1EDI20I12SVXUMA1 |
Виробник: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 548.62 грн |
10+ | 477.36 грн |
25+ | 455.16 грн |
100+ | 370.9 грн |
250+ | 354.23 грн |
500+ | 322.97 грн |
TT61N14KOFHPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.4 kV
товар відсутній
SABC541U1ENCA |
Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 38428 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
52+ | 416.77 грн |
SAB-C-541U-1EN |
Виробник: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
52+ | 416.77 грн |
CY8C4127LCE-HV423 |
товар відсутній
CY7C1041G30-10VXIT |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
500+ | 391.82 грн |
CY7C1041G30-10VXIT |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 920 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 527.46 грн |
10+ | 467.32 грн |
25+ | 457.54 грн |
50+ | 427.93 грн |
100+ | 383.96 грн |
250+ | 372.36 грн |
CY7C1041G30-10ZSXAT |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 446.92 грн |
CY7C1041G30-10ZSXAT |
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 623.08 грн |
10+ | 552.23 грн |
25+ | 540.74 грн |
50+ | 505.72 грн |
100+ | 453.78 грн |
250+ | 440.06 грн |
500+ | 411.61 грн |
ICL8001GXUMA1 |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
товар відсутній
ICL8001GXUMA1 |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
товар відсутній
IAUCN04S7N004ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 108.76 грн |
IAUCN04S7N004ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6183 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 302.53 грн |
10+ | 192.61 грн |
100+ | 136.17 грн |
500+ | 105.13 грн |
1000+ | 98.29 грн |
FZ1000R12KF5NDSA1 |
товар відсутній
CYW920822M2P4TAI040-EVK |
Виробник: Infineon Technologies
Description: EVAL KIT FOR CYW20822-P4TAI040
Packaging: Bulk
For Use With/Related Products: CYW20822–P4TAI040
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s)
Description: EVAL KIT FOR CYW20822-P4TAI040
Packaging: Bulk
For Use With/Related Products: CYW20822–P4TAI040
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s)
на замовлення 9 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8840.7 грн |
FZ1600R17HP4B21BOSA2 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
Description: IGBT MODULE 1700V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
товар відсутній
FD16001200R17HP4B2BOSA2 |
Виробник: Infineon Technologies
Description: IGBT MODULE VCES 1700V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
Description: IGBT MODULE VCES 1700V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
товар відсутній