Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (138882) > Сторінка 658 з 2315
Фото | Назва | Виробник | Інформація |
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MB91F058BSPMC-GSK5E2 | Infineon Technologies |
Description: IC MCU FLASH MICOM-0.09 208LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F060ASPMC-GSK5E1 | Infineon Technologies |
Description: IC MCU FLASH MICOM-0.09 208LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F060BSPMC-GSK5E1 | Infineon Technologies |
Description: IC MCU FLASH MICOM-0.09 208LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F060BSPMC-GSK5E2 | Infineon Technologies |
Description: IC MCU FLASH MICOM-0.09 208LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F063BSPMC-GSK5E1 | Infineon Technologies |
Description: IC MCU FLASH MICOM-0.09 208LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F063BSPMC-GSK5E2 | Infineon Technologies |
Description: IC MCU FLASH MICOM-0.09 208LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F068BSPMC-GSK5E1 | Infineon Technologies |
Description: IC MCU FLASH MICOM-0.09 208LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F036PFF-GE1 | Infineon Technologies |
Description: IC MCU 32BIT FLASH Packaging: Bulk DigiKey Programmable: Not Verified |
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MB91F035PFT-G-EFE1 | Infineon Technologies |
Description: IC MCU Packaging: Bulk DigiKey Programmable: Not Verified |
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MB91F039ABGL-GSE1 | Infineon Technologies |
Description: IC MCU Packaging: Bulk DigiKey Programmable: Not Verified |
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MB91F045APMC-G-102E1 | Infineon Technologies |
Description: IC MCU Packaging: Bulk DigiKey Programmable: Not Verified |
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MB91F045APMC-G-102SPK5E1 | Infineon Technologies |
Description: IC MCU Packaging: Bulk DigiKey Programmable: Not Verified |
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MB91F036PFF-GK5E1 | Infineon Technologies |
Description: IC MICROCONTROLLER Packaging: Bulk DigiKey Programmable: Not Verified |
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MB91F071FHBPMC-GSE2 | Infineon Technologies |
Description: IC MICROCONTROLLER Packaging: Bulk DigiKey Programmable: Not Verified |
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CY91F058BSPMC-GSE1 | Infineon Technologies |
Description: ICU MCU FLASH Packaging: Tray DigiKey Programmable: Not Verified |
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CY91F016APFV-GSE1 | Infineon Technologies |
Description: ICU MCU FLASH Packaging: Tray DigiKey Programmable: Not Verified |
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CY91F060BSPMC-GSE1 | Infineon Technologies |
Description: ICU MCU FLASH Packaging: Tray DigiKey Programmable: Not Verified |
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CY91F063BSPMC-GSE1 | Infineon Technologies |
Description: ICU MCU FLASH Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F037PMC-GSK5E1 | Infineon Technologies |
Description: IC MCU 32BIT AUTO LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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MB91F047PMC-GSK5E1 | Infineon Technologies |
Description: IC MCU 32BIT AUTO LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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SP365002918URJ | Infineon Technologies |
Description: SOFTUNE REALOS/FR BASIC MB91F057 Packaging: Tray Type: License |
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SP365002918UTJ | Infineon Technologies |
Description: SOFTUNE REALOS/FR BASIC MB91F057 Packaging: Tray Type: License |
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IRG4PH40UD-EPBF | Infineon Technologies |
Description: IGBT 1200V 41A 160W TO247-3 Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 63 ns Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 46ns/97ns Switching Energy: 1.8mJ (on), 1.93mJ (off) Test Condition: 800V, 21A, 10Ohm, 15V Gate Charge: 86 nC Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 82 A Power - Max: 160 W |
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IRG4PH30KPBF | Infineon Technologies |
Description: IGBT 1200V 20A 100W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 28ns/200ns Switching Energy: 640µJ (on), 920µJ (off) Test Condition: 960V, 10A, 23Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W |
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IRG4PH40UPBF | Infineon Technologies |
Description: IGBT 1200V 41A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 24ns/220ns Switching Energy: 1.04mJ (on), 3.4mJ (off) Test Condition: 960V, 21A, 10Ohm, 15V Gate Charge: 86 nC Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 82 A Power - Max: 160 W |
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IRG4PH40KPBF | Infineon Technologies |
Description: IGBT 1200V 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 30ns/200ns Switching Energy: 730µJ (on), 1.66mJ (off) Test Condition: 960V, 15A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 160 W |
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IRG4PH30KDPBF | Infineon Technologies |
Description: IGBT 1200V 20A 100W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 39ns/220ns Switching Energy: 950µJ (on), 1.15mJ (off) Test Condition: 800V, 10A, 23Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 40 A Power - Max: 100 W |
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IRG4PH20KDPBF | Infineon Technologies |
Description: IGBT 1200V 11A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 50ns/100ns Switching Energy: 620µJ (on), 300µJ (off) Test Condition: 800V, 5A, 50Ohm, 15V Gate Charge: 28 nC Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 22 A Power - Max: 60 W |
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IRG4PH40UDPBF | Infineon Technologies |
Description: IGBT 1200V 41A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 63 ns Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 46ns/97ns Switching Energy: 1.8mJ (on), 1.93mJ (off) Test Condition: 800V, 21A, 10Ohm, 15V Gate Charge: 86 nC Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 82 A Power - Max: 160 W |
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IRG4PH40KDPBF | Infineon Technologies |
Description: IGBT 1200V 30A 160W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 63 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 50ns/96ns Switching Energy: 1.31mJ (on), 1.12mJ (off) Test Condition: 800V, 15A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 160 W |
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IPA80R310CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 800V 16.7A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V |
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AUIRF3808S | Infineon Technologies |
Description: MOSFET N-CH 75V 106A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V |
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S29GL01GS11DHIV20 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
на замовлення 836 шт: термін постачання 21-31 дні (днів) |
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SLE 66CX162PE M5.1 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT M5.1 Packaging: Tape & Reel (TR) Package / Case: M5.1 Chip Card Module Applications: Security Supplier Device Package: T-M5.1-9 DigiKey Programmable: Not Verified |
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VM29LV040B-120JC | Infineon Technologies |
Description: IC MEMORY NOR Packaging: Bulk DigiKey Programmable: Not Verified |
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IAUC60N10S5L110ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V |
на замовлення 3127 шт: термін постачання 21-31 дні (днів) |
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CY2304NZZXC-1T | Infineon Technologies |
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 140MHz Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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CY2304NZZXC-1T | Infineon Technologies |
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 140MHz Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Main Purpose: PCI Express (PCIe) Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 2029 шт: термін постачання 21-31 дні (днів) |
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CY7C109D-10VXIT | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJ Packaging: Tape & Reel (TR) Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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CY7C109D-10VXIT | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJ Packaging: Cut Tape (CT) Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 1493 шт: термін постачання 21-31 дні (днів) |
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CY2305CSXC-1T | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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CY2305CSXC-1T | Infineon Technologies |
Description: IC FANOUT BUFFER 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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IKWH100N65EH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 140A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/240ns Switching Energy: 3.58mJ (on), 2.37mJ (off) Test Condition: 400V, 100A, 10Ohm, 15V Gate Charge: 199 nC Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 427 W |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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CY7C1312KV18-250BZCT | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGA Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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CY7C1312KV18-300BZXIT | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Dual Port, Synchronous Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 0.45 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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CY7C1312KV18-300BZXCT | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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TLE4986CXASM47HAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEED SENSOR 3SSO Packaging: Cut Tape (CT) Package / Case: 3-SIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C Technology: Hall Effect Current - Output (Max): 20mA Supplier Device Package: PG-SSO-3-52 |
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TLE4986CXASM47HAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEED SENSOR 3SSO Packaging: Tape & Box (TB) Package / Case: 3-SIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C Technology: Hall Effect Current - Output (Max): 20mA Supplier Device Package: PG-SSO-3-52 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLE4986CXTSM47HAMA1 | Infineon Technologies |
Description: MAG SWITCH SPEED SENSOR 3SSO Packaging: Tape & Box (TB) |
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IRSM005-301MH | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 30A 27QFN Features: Bootstrap Circuit Packaging: Tray Package / Case: 27-PowerVQFN Mounting Type: Surface Mount Interface: Logic Operating Temperature: 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 20V Rds On (Typ): 16mOhm Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose Current - Output / Channel: 30A Technology: Power MOSFET Voltage - Load: 100V (Max) Supplier Device Package: 27-PQFN (7x8) Fault Protection: UVLO Load Type: Inductive, Capacitive |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
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IPD90N06S405ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-31 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1860 шт: термін постачання 21-31 дні (днів) |
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IRFR6215PBF | Infineon Technologies |
Description: MOSFET P-CH 150V 13A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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XMC1202Q024X0016ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 16KB (16K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-16-8 Number of I/O: 18 DigiKey Programmable: Not Verified |
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CYW4330GKWBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH Packaging: Tape & Reel (TR) Package / Case: 225-XFBGA, WLCSP Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.3V ~ 4.8V Power - Output: 12dBm Protocol: 802.11a/b/g/n, Bluetooth v4.0 Current - Receiving: 52mA ~ 60mA Data Rate (Max): 72Mbps Current - Transmitting: 300mA ~ 325mA Supplier Device Package: 225-WLCSP (4.89x5.33) GPIO: 7 Modulation: 4DQPSK, 8DPSK, GFSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I²S, JTAG, SPI, UART, USB DigiKey Programmable: Not Verified |
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IRG4PC50SPBF | Infineon Technologies |
Description: IGBT 600V 70A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 33ns/650ns Switching Energy: 720µJ (on), 8.27mJ (off) Test Condition: 480V, 41A, 5Ohm, 15V Gate Charge: 180 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 200 W |
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IRG4PC50FPBF | Infineon Technologies |
Description: IGBT 600V 70A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 31ns/240ns Switching Energy: 370µJ (on), 2.1mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
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irg4pc50uPBF | Infineon Technologies |
Description: IGBT 600V 55A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 32ns/170ns Switching Energy: 120µJ (on), 540µJ (off) Test Condition: 480V, 27A, 5Ohm, 15V Gate Charge: 180 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 200 W |
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IRG4PC50FDPBF | Infineon Technologies |
Description: IGBT 600V 70A 200W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 55ns/240ns Switching Energy: 1.5mJ (on), 2.4mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
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IRG4PC50FD-EPBF | Infineon Technologies |
Description: IGBT 600V 70A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 55ns/240ns Switching Energy: 1.5mJ (on), 2.4mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
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IRG4PC50F-EPBF | Infineon Technologies |
Description: IGBT 600V 70A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 31ns/240ns Switching Energy: 370µJ (on), 2.1mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
товар відсутній |
MB91F058BSPMC-GSK5E2 |
Виробник: Infineon Technologies
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F060ASPMC-GSK5E1 |
Виробник: Infineon Technologies
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F060BSPMC-GSK5E1 |
Виробник: Infineon Technologies
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F060BSPMC-GSK5E2 |
Виробник: Infineon Technologies
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F063BSPMC-GSK5E1 |
Виробник: Infineon Technologies
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F063BSPMC-GSK5E2 |
Виробник: Infineon Technologies
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F068BSPMC-GSK5E1 |
Виробник: Infineon Technologies
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU FLASH MICOM-0.09 208LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F036PFF-GE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT FLASH
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT FLASH
Packaging: Bulk
DigiKey Programmable: Not Verified
товар відсутній
MB91F035PFT-G-EFE1 |
товар відсутній
MB91F039ABGL-GSE1 |
товар відсутній
MB91F045APMC-G-102E1 |
товар відсутній
MB91F045APMC-G-102SPK5E1 |
товар відсутній
MB91F036PFF-GK5E1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
товар відсутній
MB91F071FHBPMC-GSE2 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
товар відсутній
CY91F058BSPMC-GSE1 |
Виробник: Infineon Technologies
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
CY91F016APFV-GSE1 |
Виробник: Infineon Technologies
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
CY91F060BSPMC-GSE1 |
Виробник: Infineon Technologies
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
CY91F063BSPMC-GSE1 |
Виробник: Infineon Technologies
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
Description: ICU MCU FLASH
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F037PMC-GSK5E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT AUTO LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT AUTO LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
MB91F047PMC-GSK5E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT AUTO LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT AUTO LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
товар відсутній
SP365002918URJ |
Виробник: Infineon Technologies
Description: SOFTUNE REALOS/FR BASIC MB91F057
Packaging: Tray
Type: License
Description: SOFTUNE REALOS/FR BASIC MB91F057
Packaging: Tray
Type: License
товар відсутній
SP365002918UTJ |
Виробник: Infineon Technologies
Description: SOFTUNE REALOS/FR BASIC MB91F057
Packaging: Tray
Type: License
Description: SOFTUNE REALOS/FR BASIC MB91F057
Packaging: Tray
Type: License
товар відсутній
IRG4PH40UD-EPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 41A 160W TO247-3
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
Description: IGBT 1200V 41A 160W TO247-3
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
товар відсутній
IRG4PH30KPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 20A 100W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 28ns/200ns
Switching Energy: 640µJ (on), 920µJ (off)
Test Condition: 960V, 10A, 23Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
Description: IGBT 1200V 20A 100W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 28ns/200ns
Switching Energy: 640µJ (on), 920µJ (off)
Test Condition: 960V, 10A, 23Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IRG4PH40UPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 24ns/220ns
Switching Energy: 1.04mJ (on), 3.4mJ (off)
Test Condition: 960V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
Description: IGBT 1200V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 24ns/220ns
Switching Energy: 1.04mJ (on), 3.4mJ (off)
Test Condition: 960V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
товар відсутній
IRG4PH40KPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/200ns
Switching Energy: 730µJ (on), 1.66mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 160 W
Description: IGBT 1200V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 30ns/200ns
Switching Energy: 730µJ (on), 1.66mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 160 W
товар відсутній
IRG4PH30KDPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 20A 100W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 39ns/220ns
Switching Energy: 950µJ (on), 1.15mJ (off)
Test Condition: 800V, 10A, 23Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
Description: IGBT 1200V 20A 100W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 39ns/220ns
Switching Energy: 950µJ (on), 1.15mJ (off)
Test Condition: 800V, 10A, 23Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
товар відсутній
IRG4PH20KDPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 11A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/100ns
Switching Energy: 620µJ (on), 300µJ (off)
Test Condition: 800V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
Description: IGBT 1200V 11A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/100ns
Switching Energy: 620µJ (on), 300µJ (off)
Test Condition: 800V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
товар відсутній
IRG4PH40UDPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
Description: IGBT 1200V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
товар відсутній
IRG4PH40KDPBF |
Виробник: Infineon Technologies
Description: IGBT 1200V 30A 160W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/96ns
Switching Energy: 1.31mJ (on), 1.12mJ (off)
Test Condition: 800V, 15A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 160 W
Description: IGBT 1200V 30A 160W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/96ns
Switching Energy: 1.31mJ (on), 1.12mJ (off)
Test Condition: 800V, 15A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 160 W
товар відсутній
IPA80R310CEXKSA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 16.7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
Description: MOSFET N-CH 800V 16.7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 100 V
товар відсутній
AUIRF3808S |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 82A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5310 pF @ 25 V
товар відсутній
S29GL01GS11DHIV20 |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 836 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 956.96 грн |
10+ | 852.99 грн |
25+ | 841.36 грн |
40+ | 779.67 грн |
80+ | 683.28 грн |
260+ | 653.99 грн |
520+ | 639.08 грн |
SLE 66CX162PE M5.1 |
Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT M5.1
Packaging: Tape & Reel (TR)
Package / Case: M5.1 Chip Card Module
Applications: Security
Supplier Device Package: T-M5.1-9
DigiKey Programmable: Not Verified
Description: IC SECURITY CTRLR 8/16BIT M5.1
Packaging: Tape & Reel (TR)
Package / Case: M5.1 Chip Card Module
Applications: Security
Supplier Device Package: T-M5.1-9
DigiKey Programmable: Not Verified
товар відсутній
VM29LV040B-120JC |
Виробник: Infineon Technologies
Description: IC MEMORY NOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC MEMORY NOR
Packaging: Bulk
DigiKey Programmable: Not Verified
товар відсутній
IAUC60N10S5L110ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
на замовлення 3127 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 94.83 грн |
10+ | 75.09 грн |
100+ | 58.42 грн |
500+ | 46.47 грн |
1000+ | 37.86 грн |
2000+ | 35.64 грн |
CY2304NZZXC-1T |
Виробник: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
CY2304NZZXC-1T |
Виробник: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2029 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 824.5 грн |
10+ | 729.82 грн |
25+ | 699.6 грн |
100+ | 578.46 грн |
250+ | 550.07 грн |
500+ | 514.58 грн |
1000+ | 464.25 грн |
CY7C109D-10VXIT |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
750+ | 240.45 грн |
CY7C109D-10VXIT |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1493 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 327.61 грн |
10+ | 286.04 грн |
25+ | 279.85 грн |
50+ | 261.2 грн |
100+ | 234.21 грн |
250+ | 233.35 грн |
CY2305CSXC-1T |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
CY2305CSXC-1T |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
IKWH100N65EH7XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 3.58mJ (on), 2.37mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 427 W
Description: IGBT TRENCH FS 650V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 3.58mJ (on), 2.37mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 427 W
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 659.92 грн |
30+ | 507.15 грн |
120+ | 453.76 грн |
CY7C1312KV18-250BZCT |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1312KV18-300BZXIT |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 0.45 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 0.45 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY7C1312KV18-300BZXCT |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
товар відсутній
TLE4986CXASM47HAMA1 |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
товар відсутній
TLE4986CXASM47HAMA1 |
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 208.78 грн |
TLE4986CXTSM47HAMA1 |
товар відсутній
IRSM005-301MH |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 30A 27QFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 27-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 16mOhm
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 100V (Max)
Supplier Device Package: 27-PQFN (7x8)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRIVER 30A 27QFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 27-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 16mOhm
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 100V (Max)
Supplier Device Package: 27-PQFN (7x8)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
на замовлення 113 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 245.31 грн |
10+ | 211.55 грн |
25+ | 200 грн |
80+ | 162.67 грн |
IPD90N06S405ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1860 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
394+ | 53.5 грн |
IRFR6215PBF |
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
XMC1202Q024X0016ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 18
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 18
DigiKey Programmable: Not Verified
товар відсутній
CYW4330GKWBGT |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH
Packaging: Tape & Reel (TR)
Package / Case: 225-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 52mA ~ 60mA
Data Rate (Max): 72Mbps
Current - Transmitting: 300mA ~ 325mA
Supplier Device Package: 225-WLCSP (4.89x5.33)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH
Packaging: Tape & Reel (TR)
Package / Case: 225-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 52mA ~ 60mA
Data Rate (Max): 72Mbps
Current - Transmitting: 300mA ~ 325mA
Supplier Device Package: 225-WLCSP (4.89x5.33)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
товар відсутній
IRG4PC50SPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 33ns/650ns
Switching Energy: 720µJ (on), 8.27mJ (off)
Test Condition: 480V, 41A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 200 W
Description: IGBT 600V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 33ns/650ns
Switching Energy: 720µJ (on), 8.27mJ (off)
Test Condition: 480V, 41A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 200 W
товар відсутній
IRG4PC50FPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
товар відсутній
irg4pc50uPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 120µJ (on), 540µJ (off)
Test Condition: 480V, 27A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 200 W
Description: IGBT 600V 55A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 120µJ (on), 540µJ (off)
Test Condition: 480V, 27A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 200 W
товар відсутній
IRG4PC50FDPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 70A 200W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A 200W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
товар відсутній
IRG4PC50FD-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 70A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
товар відсутній
IRG4PC50F-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 70A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
товар відсутній