Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (140120) > Сторінка 653 з 2336
Фото | Назва | Виробник | Інформація |
Доступність |
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CY8C20434-12LQXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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CY8C20434-12LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Bulk Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
на замовлення 3986 шт: термін постачання 21-31 дні (днів) |
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CY8C23533-24LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x14b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 26 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY8C21434-24LKXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY8C21434-24LKXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
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CY8CTMG100-32LKXI | Infineon Technologies |
Description: IC TRUETOUCH CAPSENSE 32-QFN Packaging: Bulk Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.4V ~ 5.25V Controller Series: CY8CT Program Memory Type: FLASH (8kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 32-QFN (5x5) DigiKey Programmable: Not Verified |
на замовлення 3945 шт: термін постачання 21-31 дні (днів) |
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IGI60F2020A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 5A 28TIQFN Packaging: Cut Tape (CT) Package / Case: 28-PowerTQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 3.5V Rds On (Typ): 200mOhm LS, 200mOhm HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 5A Current - Peak Output: 14.1A Technology: NMOS, PMOS Voltage - Load: 5.5V ~ 12V Supplier Device Package: PG-TIQFN-28-1 Load Type: Inductive, Capacitive, Resistive |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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IGI60F200A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 21TIQFN Packaging: Tape & Reel (TR) Package / Case: 21-TQFN Exposed Pad Mounting Type: Surface Mount Output Configuration: Half Bridge Rds On (Typ): 200mOhm Applications: General Purpose Supplier Device Package: PG-TIQFN-21-1 |
товару немає в наявності |
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IGI60F200A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 21TIQFN Packaging: Cut Tape (CT) Package / Case: 21-TQFN Exposed Pad Mounting Type: Surface Mount Output Configuration: Half Bridge Rds On (Typ): 200mOhm Applications: General Purpose Supplier Device Package: PG-TIQFN-21-1 |
товару немає в наявності |
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IRG4PC40FPBF | Infineon Technologies |
Description: IGBT 600V 49A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 26ns/240ns Switching Energy: 370µJ (on), 1.81mJ (off) Test Condition: 480V, 27A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 49 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 160 W |
товару немає в наявності |
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T501N70TOHXPSA1 | Infineon Technologies |
Description: SCR MODULE 7000V 1000A DO200AC Packaging: Tray Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 350 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 890 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 1000 A Voltage - Off State: 7 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CYDC1543-GC | Infineon Technologies |
Description: DEVELOPMENT KIT Packaging: Bulk Contents: Board(s) |
товару немає в наявності |
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IRF540ZLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 36A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
товару немає в наявності |
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CY7C64215-56LTXIT | Infineon Technologies |
Description: MCU ENCORE 16K FLASH 56MHZ 56QFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, USB RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.25V Controller Series: CY7C642xx Program Memory Type: FLASH (16kB) Applications: USB Microcontroller Core Processor: M8C Supplier Device Package: 56-QFN-EP (8x8) Number of I/O: 50 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IDP2309XUMA1 | Infineon Technologies |
Description: XDP SMPS TV/PC Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IDP2309XUMA1 | Infineon Technologies |
Description: XDP SMPS TV/PC Packaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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CYPD2134A-24LQXQ | Infineon Technologies |
Description: TYPE-C - SMPS/LP Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 10 |
товару немає в наявності |
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CYPD2134A-24LQXQT | Infineon Technologies |
Description: TYPE-C - SMPS/LP Packaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 10 |
товару немає в наявності |
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CYPDC1185B2-32LQXQ | Infineon Technologies |
Description: TYPE-C - SMPS/LP Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 32-QFN (5x5) Number of I/O: 6 |
товару немає в наявності |
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CYPDC1185B2-32LQXQT | Infineon Technologies |
Description: TYPE-C - SMPS/LP Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 32-QFN (5x5) Number of I/O: 6 |
товару немає в наявності |
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IRFR18N15DPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 18A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
товару немає в наявності |
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TLF35585QVS01XUMA1 | Infineon Technologies |
Description: OPTIREG PMIC Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Applications: Engine Management Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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TLF35585QVS02XUMA1 | Infineon Technologies |
Description: OPTIREG PMIC Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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TLF35585QUS01XUMA1 | Infineon Technologies |
Description: OPTIREG PMIC Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Supplier Device Package: PG-TQFP-48-10 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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TLF35585QUS02XUMA1 | Infineon Technologies |
Description: OPTIREG PMIC Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Supplier Device Package: PG-TQFP-48-10 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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IRL1404ZPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
на замовлення 1631 шт: термін постачання 21-31 дні (днів) |
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SFH756 | Infineon Technologies |
Description: DIODE TRANSMITTER FIBER OPTIC Packaging: Tube Wavelength: 660nm Voltage - Forward (Vf) (Typ): 2.1V Spectral Bandwidth: 25nm Capacitance: 30 pF Voltage - DC Reverse (Vr) (Max): 3 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
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IRF1010EPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 84A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V |
на замовлення 765 шт: термін постачання 21-31 дні (днів) |
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IRFR4105ZPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 30A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товару немає в наявності |
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IRGP4063D1-EPBF | Infineon Technologies |
Description: IGBT 600V 100A 330W TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 60ns/160ns Switching Energy: 1.4mJ (on), 1.1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 192 A Power - Max: 330 W |
товару немає в наявності |
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IRGP4063D1PBF | Infineon Technologies |
Description: IGBT 600V 100A 330W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 60ns/160ns Switching Energy: 1.4mJ (on), 1.1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 192 A Power - Max: 330 W |
товару немає в наявності |
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IRGP4063D-EPBF | Infineon Technologies |
Description: IGBT 600V 96A 330W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 60ns/145ns Switching Energy: 625µJ (on), 1.28mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 330 W |
товару немає в наявності |
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IRGP4062D-EPBF | Infineon Technologies |
Description: IGBT 600V 48A 250W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
товару немає в наявності |
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ESD121B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES SG-WLL-2 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power - Peak Pulse: 24W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD121B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES SG-WLL-2 Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power - Peak Pulse: 24W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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OC2321VQFN8XTMA2 | Infineon Technologies |
Description: OC23VQESINDUSTRY Packaging: Bulk |
товару немає в наявності |
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BGT80E6327XTMA1 | Infineon Technologies |
Description: BACKHAUL TRANSCEICER Packaging: Bulk |
на замовлення 5175 шт: термін постачання 21-31 дні (днів) |
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BGT80E6327XTSA1 | Infineon Technologies |
Description: IC RF TXRX CELLULAR 119WFBGA Packaging: Bulk Package / Case: 119-WFBGA, WLBGA Mounting Type: Surface Mount Frequency: 71GHz ~ 86GHz Type: TxRx Only Voltage - Supply: 12V Power - Output: 12dBm Protocol: LTE, WiMax Supplier Device Package: PG-WFWLB-119-1 GPIO: 24 Modulation: QPSK RF Family/Standard: Cellular Serial Interfaces: SPI DigiKey Programmable: Not Verified |
на замовлення 10209 шт: термін постачання 21-31 дні (днів) |
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CY3202-C | Infineon Technologies |
Description: PSOC C-COMPILER FOR CY8C25/8C26 Type: Compiler |
товару немає в наявності |
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IKY150N65EH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 160A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/343ns Switching Energy: 2.3mJ (on), 2.9mJ (off) Test Condition: 400V, 150A, 10Ohm, 15V Gate Charge: 300 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 621 W |
на замовлення 163 шт: термін постачання 21-31 дні (днів) |
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IRGP30B120KD-EP | Infineon Technologies |
Description: IGBT 1200V 60A 300W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 300 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: NPT Switching Energy: 1.07mJ (on), 1.49mJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 169 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
товару немає в наявності |
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SAK-XC2263N40F40LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILY Packaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 76 DigiKey Programmable: Not Verified |
товару немає в наявності |
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SAF-XE164HM-72F80LAA | Infineon Technologies |
Description: 16-BIT FLASH RISC MCU Packaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x8b, 10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-3 Number of I/O: 76 DigiKey Programmable: Not Verified |
товару немає в наявності |
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IRGP50B60PD1PBF | Infineon Technologies |
Description: IGBT 600V 75A 390W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Supplier Device Package: TO-247AC IGBT Type: NPT Td (on/off) @ 25°C: 30ns/130ns Switching Energy: 255µJ (on), 375µJ (off) Test Condition: 390V, 33A, 3.3Ohm, 15V Gate Charge: 205 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 390 W |
товару немає в наявності |
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IRGP50B60PDPBF | Infineon Technologies |
Description: IGBT NPT 600V 75A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Supplier Device Package: TO-247AC IGBT Type: NPT Td (on/off) @ 25°C: 34ns/130ns Switching Energy: 360µJ (on), 380µJ (off) Test Condition: 390V, 33A, 3.3Ohm, 15V Gate Charge: 240 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 370 W |
товару немає в наявності |
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AUIRGP50B60PD1 | Infineon Technologies |
Description: IGBT 600V 75A 390W TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Supplier Device Package: TO-247AC IGBT Type: NPT Td (on/off) @ 25°C: 30ns/130ns Switching Energy: 255µJ (on), 375µJ (off) Test Condition: 390V, 33A, 3.3Ohm, 15V Gate Charge: 205 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 390 W |
товару немає в наявності |
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IKQ50N120CT2XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/312ns Switching Energy: 3.8mJ (on), 3.3mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 235 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 652 W |
на замовлення 148 шт: термін постачання 21-31 дні (днів) |
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IPD65R1K4C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.2A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IPD65R1K4C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.2A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
на замовлення 12495 шт: термін постачання 21-31 дні (днів) |
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IPD65R420CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 345µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2245 шт: термін постачання 21-31 дні (днів) |
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IPD65R1K0CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 7.2A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 Drain to Source Voltage (Vdss): 650 V |
товару немає в наявності |
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IPD65R1K4CFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 2.8A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V |
товару немає в наявності |
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IPD65R660CFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V |
товару немає в наявності |
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IPD65R420CFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
товару немає в наявності |
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IPD65R420CFDBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
товару немає в наявності |
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IPD65R420CFDBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TT425N12KOFHPSA2 | Infineon Technologies |
Description: SCR MODULE 1.2KV 800A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 471 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 1.2 kV |
товару немає в наявності |
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FM22L16-55-TGTR | Infineon Technologies |
Description: IC FRAM 4MBIT PARALLEL 44TSOP II Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 110ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
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CY9AF312LPMC1-G-MJE1 | Infineon Technologies |
Description: IC MM MCU 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 9x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 51 DigiKey Programmable: Not Verified |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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CY9AF312LAPMC1-G-MNE2 | Infineon Technologies |
Description: IC MM MCU 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 9x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, SPI, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 51 DigiKey Programmable: Not Verified |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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CY8C20434-12LQXI |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 334.73 грн |
10+ | 290.02 грн |
25+ | 274.16 грн |
80+ | 222.98 грн |
230+ | 211.55 грн |
490+ | 189.82 грн |
980+ | 157.47 грн |
CY8C20434-12LQXIT |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 3986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
119+ | 181.12 грн |
CY8C23533-24LQXIT |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
товару немає в наявності
CY8C21434-24LKXI |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товару немає в наявності
CY8C21434-24LKXIT |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товару немає в наявності
CY8CTMG100-32LKXI |
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 32-QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
Description: IC TRUETOUCH CAPSENSE 32-QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
на замовлення 3945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
59+ | 393.84 грн |
IGI60F2020A1LAUMA1 |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 200mOhm LS, 200mOhm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 14.1A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 200mOhm LS, 200mOhm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 14.1A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 788.45 грн |
10+ | 526.82 грн |
100+ | 395.24 грн |
500+ | 344.09 грн |
IGI60F200A1LAUMA1 |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
товару немає в наявності
IGI60F200A1LAUMA1 |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Cut Tape (CT)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Cut Tape (CT)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
товару немає в наявності
IRG4PC40FPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 49A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 160 W
Description: IGBT 600V 49A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 160 W
товару немає в наявності
T501N70TOHXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 7000V 1000A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
Description: SCR MODULE 7000V 1000A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 75675.67 грн |
CYDC1543-GC |
товару немає в наявності
IRF540ZLPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товару немає в наявності
CY7C64215-56LTXIT |
Виробник: Infineon Technologies
Description: MCU ENCORE 16K FLASH 56MHZ 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: MCU ENCORE 16K FLASH 56MHZ 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
товару немає в наявності
IDP2309XUMA1 |
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 105.72 грн |
IDP2309XUMA1 |
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 217.26 грн |
10+ | 175.58 грн |
100+ | 142.05 грн |
500+ | 118.5 грн |
1000+ | 101.46 грн |
CYPD2134A-24LQXQ |
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
товару немає в наявності
CYPD2134A-24LQXQT |
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
товару немає в наявності
CYPDC1185B2-32LQXQ |
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
товару немає в наявності
CYPDC1185B2-32LQXQT |
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
товару немає в наявності
IRFR18N15DPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
товару немає в наявності
TLF35585QVS01XUMA1 |
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
TLF35585QVS02XUMA1 |
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
TLF35585QUS01XUMA1 |
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
TLF35585QUS02XUMA1 |
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
IRL1404ZPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
на замовлення 1631 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 183.49 грн |
50+ | 95.26 грн |
100+ | 86.92 грн |
500+ | 67.61 грн |
1000+ | 64.84 грн |
SFH756 |
Виробник: Infineon Technologies
Description: DIODE TRANSMITTER FIBER OPTIC
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
Description: DIODE TRANSMITTER FIBER OPTIC
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
IRF1010EPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 765 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.16 грн |
50+ | 58.64 грн |
100+ | 53.14 грн |
500+ | 40.64 грн |
IRFR4105ZPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
IRGP4063D1-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 100A 330W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
Description: IGBT 600V 100A 330W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
товару немає в наявності
IRGP4063D1PBF |
Виробник: Infineon Technologies
Description: IGBT 600V 100A 330W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
Description: IGBT 600V 100A 330W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
товару немає в наявності
IRGP4063D-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 96A 330W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
Description: IGBT 600V 96A 330W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
товару немає в наявності
IRGP4062D-EPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT 600V 48A 250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
товару немає в наявності
ESD121B1W0201E6327XTSA1 |
Виробник: Infineon Technologies
Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 2.36 грн |
ESD121B1W0201E6327XTSA1 |
Виробник: Infineon Technologies
Description: TVS DIODES SG-WLL-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODES SG-WLL-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 18.43 грн |
25+ | 12.12 грн |
100+ | 5.9 грн |
500+ | 4.61 грн |
1000+ | 3.21 грн |
2000+ | 2.78 грн |
5000+ | 2.53 грн |
OC2321VQFN8XTMA2 |
товару немає в наявності
BGT80E6327XTMA1 |
на замовлення 5175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 5389.39 грн |
BGT80E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF TXRX CELLULAR 119WFBGA
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Description: IC RF TXRX CELLULAR 119WFBGA
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
на замовлення 10209 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 5389.39 грн |
CY3202-C |
товару немає в наявності
IKY150N65EH7XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
на замовлення 163 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 958.88 грн |
10+ | 675.71 грн |
IRGP30B120KD-EP |
Виробник: Infineon Technologies
Description: IGBT 1200V 60A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT 1200V 60A 300W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товару немає в наявності
SAK-XC2263N40F40LAAKXUMA1 |
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
SAF-XE164HM-72F80LAA |
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
товару немає в наявності
IRGP50B60PD1PBF |
Виробник: Infineon Technologies
Description: IGBT 600V 75A 390W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
Description: IGBT 600V 75A 390W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
IRGP50B60PDPBF |
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
Description: IGBT NPT 600V 75A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
товару немає в наявності
AUIRGP50B60PD1 |
Виробник: Infineon Technologies
Description: IGBT 600V 75A 390W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
Description: IGBT 600V 75A 390W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
IKQ50N120CT2XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 148 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 793.82 грн |
30+ | 486.62 грн |
120+ | 436.55 грн |
IPD65R1K4C6ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 29.48 грн |
5000+ | 26.36 грн |
7500+ | 26.14 грн |
IPD65R1K4C6ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 12495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.25 грн |
10+ | 66.02 грн |
100+ | 44.11 грн |
500+ | 32.57 грн |
1000+ | 29.72 грн |
IPD65R420CFDAATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2245 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 247.21 грн |
10+ | 155.55 грн |
100+ | 108.8 грн |
500+ | 83.35 грн |
1000+ | 77.31 грн |
IPD65R1K0CEAUMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Drain to Source Voltage (Vdss): 650 V
Description: MOSFET N-CH 650V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Drain to Source Voltage (Vdss): 650 V
товару немає в наявності
IPD65R1K4CFDATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
товару немає в наявності
IPD65R660CFDATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товару немає в наявності
IPD65R420CFDATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
товару немає в наявності
IPD65R420CFDBTMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
товару немає в наявності
IPD65R420CFDBTMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
365+ | 56.54 грн |
TT425N12KOFHPSA2 |
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.2 kV
товару немає в наявності
FM22L16-55-TGTR |
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 1946.28 грн |
CY9AF312LPMC1-G-MJE1 |
Виробник: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 742.39 грн |
10+ | 498.2 грн |
25+ | 442.45 грн |
80+ | 364.67 грн |
230+ | 330.57 грн |
440+ | 313.94 грн |
945+ | 292.84 грн |
CY9AF312LAPMC1-G-MNE2 |
Виробник: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 624.92 грн |
10+ | 543.89 грн |
25+ | 518.62 грн |
160+ | 422.6 грн |
320+ | 403.61 грн |
480+ | 368 грн |
960+ | 315.26 грн |