Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4368) > Сторінка 30 з 73
| Фото | Назва | Виробник | Інформація |
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AON2803 | Alpha & Omega Semiconductor |
 Trans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R |
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| AON2803 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 0.95W Case: DFN6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 8.5nC Kind of channel: enhanced |
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| AON2803 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R |
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| AON2803 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 0.95W Case: DFN6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 8.5nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| AON2810 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 2A 6-Pin DFN-A EP T/R |
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AON2810 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 2A 6-Pin DFN-A EP T/R |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| AON2810 | ALPHA & OMEGA SEMICONDUCTOR |
AON2810 Multi channel transistors |
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AON2812 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R |
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AON2812 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AON3402 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8 Case: DFN8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Power dissipation: 3W Gate-source voltage: ±12V Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 9.6A On-state resistance: 13mΩ Gate charge: 17.9nC |
на замовлення 2767 шт: термін постачання 21-30 дні (днів) |
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AON3402 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 12.6A 8-Pin DFN |
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AON3402 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8 Case: DFN8 Mounting: SMD Polarisation: unipolar Kind of channel: enhanced Power dissipation: 3W Gate-source voltage: ±12V Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 9.6A On-state resistance: 13mΩ Gate charge: 17.9nC |
на замовлення 2767 шт: термін постачання 14-21 дні (днів) |
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AON3414 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 10.5A 8-Pin DFN T/R |
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| AON3414 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 2W Type of transistor: N-MOSFET Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Features of semiconductor devices: ESD protected gate On-state resistance: 17mΩ Drain current: 8A Drain-source voltage: 30V Polarisation: unipolar |
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| AON3414 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 2W Type of transistor: N-MOSFET Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Features of semiconductor devices: ESD protected gate On-state resistance: 17mΩ Drain current: 8A Drain-source voltage: 30V Polarisation: unipolar кількість в упаковці: 1 шт |
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AON3419 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.8A; 2W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.8A Power dissipation: 2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 9.6nC Kind of channel: enhanced |
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AON3419 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 10A 8-Pin DFN |
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AON3419 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.8A; 2W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.8A Power dissipation: 2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: SMD Gate charge: 9.6nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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AON3611 | Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 30V 5A/6A 8-Pin DFN |
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AON3611 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.8/-4.7A Power dissipation: 1.3/1.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 50/38mΩ Mounting: SMD Gate charge: 2/4.6nC Kind of channel: enhanced Semiconductor structure: common drain |
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AON3611 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.8/-4.7A Power dissipation: 1.3/1.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 50/38mΩ Mounting: SMD Gate charge: 2/4.6nC Kind of channel: enhanced Semiconductor structure: common drain кількість в упаковці: 1 шт |
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| AON3611_101 | Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 30V 5A/6A |
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AON3814 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.3A Power dissipation: 1.6W Case: DFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: common drain |
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AON3814 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 6A 8-Pin DFN |
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| AON3814 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 6A 8-Pin DFN |
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AON3814 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.3A Power dissipation: 1.6W Case: DFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: common drain кількість в упаковці: 1 шт |
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AON3816 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.1A Power dissipation: 1.6W Case: DFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: common drain |
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AON3816 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 4A 8-Pin DFN |
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AON3816 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.1A Power dissipation: 1.6W Case: DFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 11nC Kind of channel: enhanced Semiconductor structure: common drain кількість в упаковці: 1 шт |
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| AON3818 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 24V 8A 8-Pin DFN T/R |
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| AON3818 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 24V 8A 8-Pin DFN T/R |
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AON3818 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8 Power dissipation: 1.7W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: DFN8 Drain-source voltage: 24V Drain current: 6A Type of transistor: N-MOSFET x2 |
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AON3818 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8 Power dissipation: 1.7W Polarisation: unipolar Gate charge: 9.5nC Kind of channel: enhanced Gate-source voltage: ±12V Mounting: SMD Case: DFN8 Drain-source voltage: 24V Drain current: 6A Type of transistor: N-MOSFET x2 кількість в упаковці: 1 шт |
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| AON3820 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 1.3W Type of transistor: N-MOSFET x2 Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±12V Features of semiconductor devices: ESD protected gate On-state resistance: 8.9mΩ Drain current: 6.2A Drain-source voltage: 24V Semiconductor structure: common drain Polarisation: unipolar |
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| AON3820 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3 Mounting: SMD Case: DFN3x3 Power dissipation: 1.3W Type of transistor: N-MOSFET x2 Gate charge: 12.5nC Kind of channel: enhanced Gate-source voltage: ±12V Features of semiconductor devices: ESD protected gate On-state resistance: 8.9mΩ Drain current: 6.2A Drain-source voltage: 24V Semiconductor structure: common drain Polarisation: unipolar кількість в упаковці: 1 шт |
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AON4407 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 12V 9A 8-Pin DFN-A T/R |
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AON4407 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8 Mounting: SMD Drain-source voltage: -12V Drain current: -7A Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±8V Case: DFN8 |
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AON4407 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8 Mounting: SMD Drain-source voltage: -12V Drain current: -7A Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±8V Case: DFN8 кількість в упаковці: 3000 шт |
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AON4421 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1.6W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Power dissipation: 1.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 17.6nC Kind of channel: enhanced |
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AON4421 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 8A 8-Pin DFN-A T/R |
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| AON4421 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 8A 8-Pin DFN-A T/R |
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AON4421 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1.6W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Power dissipation: 1.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 17.6nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AON4605 | Alpha & Omega Semiconductor |
Trans MOSFET N/P-CH 30V 4.3A/3.4A 8-Pin DFN-A |
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AON4703 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Power dissipation: 1.1W Case: DFN8 Gate-source voltage: ±8V Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
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AON4703 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Power dissipation: 1.1W Case: DFN8 Gate-source voltage: ±8V Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AON4803 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; 1.1W; DFN8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Power dissipation: 1.1W Case: DFN8 Gate-source voltage: ±8V Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
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AON4803 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 3.4A 8-Pin DFN-A |
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AON4803 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; 1.1W; DFN8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.7A Power dissipation: 1.1W Case: DFN8 Gate-source voltage: ±8V Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| AON4805 | Alpha & Omega Semiconductor | Voltage -20, RDS(ON) 65, Dual P |
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AON4807 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 4A 8-Pin DFN-A T/R |
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| AON5802BG | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 10A 6-Pin DFN EP T/R |
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| AON5802BG | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 10A 6-Pin DFN EP T/R |
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| AON5802BL | Alpha & Omega Semiconductor |
на замовлення 490 шт: термін постачання 14-28 дні (днів) |
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AON5816 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 1W Case: DFN2x5 Gate-source voltage: ±12V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
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| AON5816 | Alpha & Omega Semiconductor |
20V Common-Drain Dual N-Channel MOSFET |
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AON5816 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 10A Power dissipation: 1W Case: DFN2x5 Gate-source voltage: ±12V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AON5820 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 8A Power dissipation: 1W Case: DFN6 Gate-source voltage: ±12V Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
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AON5820 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 10A 6-Pin DFN EP T/R |
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AON5820 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 8A Power dissipation: 1W Case: DFN6 Gate-source voltage: ±12V Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AON6144 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 40V 100A 8-Pin DFN EP T/R |
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| AON2803 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R
Trans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R
товар відсутній
| AON2803 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 0.95W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 8.5nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 0.95W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 8.5nC
Kind of channel: enhanced
товар відсутній
| AON2803 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R
Trans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R
товар відсутній
| AON2803 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 0.95W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 8.5nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; 950mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 0.95W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 8.5nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| AON2810 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 2A 6-Pin DFN-A EP T/R
Trans MOSFET N-CH 30V 2A 6-Pin DFN-A EP T/R
товар відсутній
| AON2810 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 2A 6-Pin DFN-A EP T/R
Trans MOSFET N-CH 30V 2A 6-Pin DFN-A EP T/R
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
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| 3000+ | 6.24 грн |
| AON2812 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R
Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R
товар відсутній
| AON2812 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R
Trans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.64 грн |
| AON3402 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8
Case: DFN8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 9.6A
On-state resistance: 13mΩ
Gate charge: 17.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8
Case: DFN8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 9.6A
On-state resistance: 13mΩ
Gate charge: 17.9nC
на замовлення 2767 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 19.85 грн |
| 25+ | 16.56 грн |
| 56+ | 14.63 грн |
| 153+ | 13.82 грн |
| AON3402 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8
Case: DFN8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 9.6A
On-state resistance: 13mΩ
Gate charge: 17.9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8
Case: DFN8
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 3W
Gate-source voltage: ±12V
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 9.6A
On-state resistance: 13mΩ
Gate charge: 17.9nC
на замовлення 2767 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.82 грн |
| 25+ | 20.64 грн |
| 56+ | 17.55 грн |
| 153+ | 16.59 грн |
| 3000+ | 16.54 грн |
| AON3414 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 10.5A 8-Pin DFN T/R
Trans MOSFET N-CH 30V 10.5A 8-Pin DFN T/R
товар відсутній
| AON3414 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 2W
Type of transistor: N-MOSFET
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Features of semiconductor devices: ESD protected gate
On-state resistance: 17mΩ
Drain current: 8A
Drain-source voltage: 30V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 2W
Type of transistor: N-MOSFET
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Features of semiconductor devices: ESD protected gate
On-state resistance: 17mΩ
Drain current: 8A
Drain-source voltage: 30V
Polarisation: unipolar
товар відсутній
| AON3414 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 2W
Type of transistor: N-MOSFET
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Features of semiconductor devices: ESD protected gate
On-state resistance: 17mΩ
Drain current: 8A
Drain-source voltage: 30V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 2W
Type of transistor: N-MOSFET
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Features of semiconductor devices: ESD protected gate
On-state resistance: 17mΩ
Drain current: 8A
Drain-source voltage: 30V
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| AON3419 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.8A; 2W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.8A
Power dissipation: 2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.8A; 2W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.8A
Power dissipation: 2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of channel: enhanced
товар відсутній
| AON3419 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.8A; 2W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.8A
Power dissipation: 2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.8A; 2W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.8A
Power dissipation: 2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
| AON3611 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N/P-CH 30V 5A/6A 8-Pin DFN
Trans MOSFET N/P-CH 30V 5A/6A 8-Pin DFN
товар відсутній
| AON3611 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.8/-4.7A
Power dissipation: 1.3/1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 50/38mΩ
Mounting: SMD
Gate charge: 2/4.6nC
Kind of channel: enhanced
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.8/-4.7A
Power dissipation: 1.3/1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 50/38mΩ
Mounting: SMD
Gate charge: 2/4.6nC
Kind of channel: enhanced
Semiconductor structure: common drain
товар відсутній
| AON3611 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.8/-4.7A
Power dissipation: 1.3/1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 50/38mΩ
Mounting: SMD
Gate charge: 2/4.6nC
Kind of channel: enhanced
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 3.8/-4.7A
Power dissipation: 1.3/1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 50/38mΩ
Mounting: SMD
Gate charge: 2/4.6nC
Kind of channel: enhanced
Semiconductor structure: common drain
кількість в упаковці: 1 шт
товар відсутній
| AON3814 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.3A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.3A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
товар відсутній
| AON3814 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.3A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.3A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.3A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
кількість в упаковці: 1 шт
товар відсутній
| AON3816 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
товар відсутній
| AON3816 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.1A; 1.6W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.1A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Semiconductor structure: common drain
кількість в упаковці: 1 шт
товар відсутній
| AON3818 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: DFN8
Drain-source voltage: 24V
Drain current: 6A
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: DFN8
Drain-source voltage: 24V
Drain current: 6A
Type of transistor: N-MOSFET x2
товар відсутній
| AON3818 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: DFN8
Drain-source voltage: 24V
Drain current: 6A
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: DFN8
Drain-source voltage: 24V
Drain current: 6A
Type of transistor: N-MOSFET x2
кількість в упаковці: 1 шт
товар відсутній
| AON3820 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 1.3W
Type of transistor: N-MOSFET x2
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Features of semiconductor devices: ESD protected gate
On-state resistance: 8.9mΩ
Drain current: 6.2A
Drain-source voltage: 24V
Semiconductor structure: common drain
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 1.3W
Type of transistor: N-MOSFET x2
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Features of semiconductor devices: ESD protected gate
On-state resistance: 8.9mΩ
Drain current: 6.2A
Drain-source voltage: 24V
Semiconductor structure: common drain
Polarisation: unipolar
товар відсутній
| AON3820 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 1.3W
Type of transistor: N-MOSFET x2
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Features of semiconductor devices: ESD protected gate
On-state resistance: 8.9mΩ
Drain current: 6.2A
Drain-source voltage: 24V
Semiconductor structure: common drain
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 6.2A; 1.3W; DFN3x3
Mounting: SMD
Case: DFN3x3
Power dissipation: 1.3W
Type of transistor: N-MOSFET x2
Gate charge: 12.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Features of semiconductor devices: ESD protected gate
On-state resistance: 8.9mΩ
Drain current: 6.2A
Drain-source voltage: 24V
Semiconductor structure: common drain
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
| AON4407 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 12V 9A 8-Pin DFN-A T/R
Trans MOSFET P-CH 12V 9A 8-Pin DFN-A T/R
товар відсутній
| AON4407 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8
Mounting: SMD
Drain-source voltage: -12V
Drain current: -7A
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8
Mounting: SMD
Drain-source voltage: -12V
Drain current: -7A
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN8
товар відсутній
| AON4407 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8
Mounting: SMD
Drain-source voltage: -12V
Drain current: -7A
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN8
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7A; 1.6W; DFN8
Mounting: SMD
Drain-source voltage: -12V
Drain current: -7A
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: DFN8
кількість в упаковці: 3000 шт
товар відсутній
| AON4421 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1.6W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1.6W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of channel: enhanced
товар відсутній
| AON4421 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 8A 8-Pin DFN-A T/R
Trans MOSFET P-CH 30V 8A 8-Pin DFN-A T/R
товар відсутній
| AON4421 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 8A 8-Pin DFN-A T/R
Trans MOSFET P-CH 30V 8A 8-Pin DFN-A T/R
товар відсутній
| AON4421 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1.6W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; 1.6W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Power dissipation: 1.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AON4605 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N/P-CH 30V 4.3A/3.4A 8-Pin DFN-A
Trans MOSFET N/P-CH 30V 4.3A/3.4A 8-Pin DFN-A
товар відсутній
| AON4703 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
| AON4703 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AON4803 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
товар відсутній
| AON4803 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.7A; 1.1W; DFN8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.7A
Power dissipation: 1.1W
Case: DFN8
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AON4807 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 4A 8-Pin DFN-A T/R
Trans MOSFET P-CH 30V 4A 8-Pin DFN-A T/R
товар відсутній
| AON5802BG |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 10A 6-Pin DFN EP T/R
Trans MOSFET N-CH 30V 10A 6-Pin DFN EP T/R
товар відсутній
| AON5802BG |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 10A 6-Pin DFN EP T/R
Trans MOSFET N-CH 30V 10A 6-Pin DFN EP T/R
товар відсутній
| AON5802BL |
Виробник: Alpha & Omega Semiconductor
на замовлення 490 шт:
термін постачання 14-28 дні (днів)| AON5816 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1W
Case: DFN2x5
Gate-source voltage: ±12V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1W
Case: DFN2x5
Gate-source voltage: ±12V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
товар відсутній
| AON5816 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1W
Case: DFN2x5
Gate-source voltage: ±12V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 10A; 1W; DFN2x5
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1W
Case: DFN2x5
Gate-source voltage: ±12V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| AON5820 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1W
Case: DFN6
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1W
Case: DFN6
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
товар відсутній
| AON5820 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 10A 6-Pin DFN EP T/R
Trans MOSFET N-CH 20V 10A 6-Pin DFN EP T/R
товар відсутній
| AON5820 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1W
Case: DFN6
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Power dissipation: 1W
Case: DFN6
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| AON6144 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 100A 8-Pin DFN EP T/R
Trans MOSFET N-CH 40V 100A 8-Pin DFN EP T/R
товар відсутній