Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4361) > Сторінка 26 з 73
| Фото | Назва | Виробник | Інформація |
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AOI482 | Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) TO-251A |
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AOI4N60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A T/R |
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AOI4S60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A |
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AOI508 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A T/R |
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AOI510 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube |
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AOI514 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 46A 3-Pin(3+Tab) TO-251A Tube |
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AOI538 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube |
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AOI5N40 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 400V 4.2A 3-Pin(3+Tab) TO-251A T/R |
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AOI5N40 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.8A Case: TO251A Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 6.9nC Kind of channel: enhanced |
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AOI5N40 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.8A Case: TO251A Gate-source voltage: ±30V On-state resistance: 1.6Ω Mounting: THT Gate charge: 6.9nC Kind of channel: enhanced кількість в упаковці: 3500 шт |
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AOI66406 | Alpha & Omega Semiconductor |
N-Channel MOSFET |
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AOI66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: THT Gate charge: 8.5nC Kind of channel: enhanced |
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AOI66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: THT Gate charge: 8.5nC Kind of channel: enhanced кількість в упаковці: 3500 шт |
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| AOI7N65 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube |
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AOI7S65 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube |
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AOI8N25 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R |
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AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced |
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AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5A Case: TO251A Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 6nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced |
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AOI950A70 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.2A Power dissipation: 56.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 10nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOI9N50 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube |
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| AOK040A60 | Alpha & Omega Semiconductor |
High Voltage MOSFETs (500V - 1000V) |
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| AOK060V65X2 | Alpha & Omega Semiconductor | AOK060V65X2 |
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| AOK065V120X2Q | Alpha & Omega Semiconductor |
1200V SiC MOSFETs |
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| AOK095A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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AOK10B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK10N90 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube |
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| AOK125A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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AOK15B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube |
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| AOK160A60 | Alpha & Omega Semiconductor |
N Channel Power Transistor |
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AOK18N65L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R |
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AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ |
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AOK20B120D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ кількість в упаковці: 1 шт |
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AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ |
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AOK20B120E1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ кількість в упаковці: 240 шт |
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AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ |
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AOK20B120E2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ кількість в упаковці: 1 шт |
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AOK20B135D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
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AOK20B135E1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B135E1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ Turn-off time: 311ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.2V Collector current: 20A Turn-off switching energy: 1.26mJ Mounting: THT Collector-emitter voltage: 1.35kV Power dissipation: 125W Gate charge: 58nC Pulsed collector current: 80A Type of transistor: IGBT Kind of package: tube Case: TO247 |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector current: 20A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 74A Turn-on time: 45ns Turn-off time: 107ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 24.6nC Turn-on switching energy: 0.76mJ Turn-off switching energy: 0.18mJ |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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AOK20B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector current: 20A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 74A Turn-on time: 45ns Turn-off time: 107ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 24.6nC Turn-on switching energy: 0.76mJ Turn-off switching energy: 0.18mJ кількість в упаковці: 1 шт |
на замовлення 148 шт: термін постачання 14-21 дні (днів) |
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AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ |
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AOK20B65M1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ кількість в упаковці: 240 шт |
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AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ |
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AOK20B65M2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ кількість в упаковці: 1 шт |
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AOK20N60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R |
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AOK20S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 |
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AOK20S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 |
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AOK22N50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R |
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AOK27S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R |
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AOK29S50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
| AOI482 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) TO-251A
Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) TO-251A
товар відсутній
| AOI4N60 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A T/R
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A T/R
товар відсутній
| AOI4S60 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251A
товар відсутній
| AOI508 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A T/R
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A T/R
товар відсутній
| AOI510 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOI514 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 46A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 30V 46A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOI538 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOI5N40 |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 400V 4.2A 3-Pin(3+Tab) TO-251A T/R
Trans MOSFET N-CH 400V 4.2A 3-Pin(3+Tab) TO-251A T/R
товар відсутній
| AOI5N40 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhanced
товар відсутній
| AOI5N40 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhanced
кількість в упаковці: 3500 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.8A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.8A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 1.6Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhanced
кількість в упаковці: 3500 шт
товар відсутній
| AOI66406 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Power dissipation: 20.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 8.5nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Power dissipation: 20.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 8.5nC
Kind of channel: enhanced
товар відсутній
| AOI66406 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Power dissipation: 20.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 8.5nC
Kind of channel: enhanced
кількість в упаковці: 3500 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 45A
Power dissipation: 20.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 8.5nC
Kind of channel: enhanced
кількість в упаковці: 3500 шт
товар відсутній
| AOI7N65 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOI7S65 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOI8N25 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R
Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-251A T/R
товар відсутній
| AOI8N25 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
товар відсутній
| AOI8N25 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5A
Case: TO251A
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 6nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AOI950A70 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
товар відсутній
| AOI950A70 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.2A; 56.5W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.2A
Power dissipation: 56.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AOI9N50 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-251A Tube
товар відсутній
| AOK10B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK10N90 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK15B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK18N65L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK20B120D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
товар відсутній
| AOK20B120D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B120D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 67.5nC
Kind of package: tube
Turn-off time: 423ns
Collector-emitter saturation voltage: 1.54V
Turn-off switching energy: 0.94mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK20B120E1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
товар відсутній
| AOK20B120E1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B120E1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
кількість в упаковці: 240 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 167W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 60.5nC
Kind of package: tube
Turn-off time: 339ns
Collector-emitter saturation voltage: 1.68V
Turn-off switching energy: 0.83mJ
кількість в упаковці: 240 шт
товар відсутній
| AOK20B120E2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
товар відсутній
| AOK20B120E2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B120E2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 53.5nC
Kind of package: tube
Turn-off time: 314ns
Collector-emitter saturation voltage: 1.75V
Turn-off switching energy: 0.82mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK20B135D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B135D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 311.29 грн |
| 3+ | 260.38 грн |
| 5+ | 198.49 грн |
| AOK20B135D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-off time: 480ns
Collector-emitter saturation voltage: 1.57V
Turn-off switching energy: 1.05mJ
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 373.55 грн |
| 3+ | 324.47 грн |
| 5+ | 238.19 грн |
| 13+ | 225.51 грн |
| AOK20B135E1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B135E1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ
Turn-off time: 311ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 2.2V
Collector current: 20A
Turn-off switching energy: 1.26mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 125W
Gate charge: 58nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.64 грн |
| AOK20B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector current: 20A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 24.6nC
Turn-on switching energy: 0.76mJ
Turn-off switching energy: 0.18mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector current: 20A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 24.6nC
Turn-on switching energy: 0.76mJ
Turn-off switching energy: 0.18mJ
на замовлення 148 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 167.55 грн |
| 7+ | 129.06 грн |
| 19+ | 121.51 грн |
| AOK20B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector current: 20A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 24.6nC
Turn-on switching energy: 0.76mJ
Turn-off switching energy: 0.18mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ
Type of transistor: IGBT
Collector current: 20A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 74A
Turn-on time: 45ns
Turn-off time: 107ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 24.6nC
Turn-on switching energy: 0.76mJ
Turn-off switching energy: 0.18mJ
кількість в упаковці: 1 шт
на замовлення 148 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.91 грн |
| 3+ | 208.79 грн |
| 7+ | 154.87 грн |
| 19+ | 145.81 грн |
| AOK20B65M1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
товар відсутній
| AOK20B65M1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B65M1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
кількість в упаковці: 240 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.27mJ
Turn-on switching energy: 0.47mJ
кількість в упаковці: 240 шт
товар відсутній
| AOK20B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
товар відсутній
| AOK20B65M2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK20B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 114W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 178ns
Collector-emitter saturation voltage: 1.7V
Turn-off switching energy: 0.28mJ
Turn-on switching energy: 0.58mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK20N60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK20S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK20S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK22N50L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK27S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK29S50L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
товар відсутній