Технічний опис AON3818 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 24V 8A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V, Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-DFN (3x3).
Інші пропозиції AON3818
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AON3818 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8 Mounting: SMD Case: DFN8 Power dissipation: 1.7W Gate-source voltage: ±12V Type of transistor: N-MOSFET x2 Drain-source voltage: 24V Drain current: 6A Gate charge: 9.5nC Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |
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AON3818 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 24V 8A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-DFN (3x3) |
товар відсутній |
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AON3818 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; 1.7W; DFN8 Mounting: SMD Case: DFN8 Power dissipation: 1.7W Gate-source voltage: ±12V Type of transistor: N-MOSFET x2 Drain-source voltage: 24V Drain current: 6A Gate charge: 9.5nC Polarisation: unipolar Kind of channel: enhanced |
товар відсутній |