Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4368) > Сторінка 27 з 73
| Фото | Назва | Виробник | Інформація |
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AOK27S60L | Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R |
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AOK29S50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube |
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AOK29S50L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube |
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AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-off time: 340ns Collector-emitter saturation voltage: 1.77V Turn-off switching energy: 1.28mJ |
на замовлення 206 шт: термін постачання 21-30 дні (днів) |
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AOK30B120D2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-off time: 340ns Collector-emitter saturation voltage: 1.77V Turn-off switching energy: 1.28mJ кількість в упаковці: 1 шт |
на замовлення 206 шт: термін постачання 14-21 дні (днів) |
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AOK30B135W1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Collector-emitter voltage: 1.35kV Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.8V Collector current: 30A Pulsed collector current: 120A Turn-off time: 362ns Type of transistor: IGBT Power dissipation: 170W Kind of package: tube Gate charge: 62nC Turn-off switching energy: 1.47mJ Mounting: THT Case: TO247 |
на замовлення 58 шт: термін постачання 21-30 дні (днів) |
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AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Collector-emitter voltage: 1.35kV Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.8V Collector current: 30A Pulsed collector current: 120A Turn-off time: 362ns Type of transistor: IGBT Power dissipation: 170W Kind of package: tube Gate charge: 62nC Turn-off switching energy: 1.47mJ Mounting: THT Case: TO247 кількість в упаковці: 1 шт |
на замовлення 58 шт: термін постачання 14-21 дні (днів) |
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| AOK30B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 96A Turn-on time: 66ns Turn-off time: 89ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 34nC Turn-on switching energy: 1.1mJ Turn-off switching energy: 0.24mJ |
на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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AOK30B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 96A Turn-on time: 66ns Turn-off time: 89ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 34nC Turn-on switching energy: 1.1mJ Turn-off switching energy: 0.24mJ кількість в упаковці: 1 шт |
на замовлення 164 шт: термін постачання 14-21 дні (днів) |
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AOK30B65M2 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube |
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AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Turn-off time: 193ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.66V Collector current: 30A Turn-off switching energy: 0.41mJ Mounting: THT Turn-on switching energy: 1.02mJ Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 63nC Pulsed collector current: 90A Type of transistor: IGBT Turn-on time: 76ns Kind of package: tube Case: TO247 |
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AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Turn-off time: 193ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.66V Collector current: 30A Turn-off switching energy: 0.41mJ Mounting: THT Turn-on switching energy: 1.02mJ Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 63nC Pulsed collector current: 90A Type of transistor: IGBT Turn-on time: 76ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт |
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AOK40B120H1 | Alpha & Omega Semiconductor |
1200V, 40A AlphaIGBT TM With Soft and Fast Recovery Anti-parallel Diode |
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AOK40B120H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 128nC Kind of package: tube Turn-on time: 133ns Turn-off time: 375ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.24mJ Turn-on switching energy: 2.45mJ |
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AOK40B120H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 128nC Kind of package: tube Turn-on time: 133ns Turn-off time: 375ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.24mJ Turn-on switching energy: 2.45mJ кількість в упаковці: 1 шт |
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AOK40B120M1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 600000mW 3-Pin(3+Tab) TO-247 |
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| AOK40B120N1 | Alpha & Omega Semiconductor |
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode |
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| AOK40B120N1 | Alpha & Omega Semiconductor |
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode |
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| AOK40B120P1 | Alpha & Omega Semiconductor |
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
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| AOK40B120P1 | Alpha & Omega Semiconductor |
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
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AOK40B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 80A 312500mW 3-Pin(3+Tab) TO-247 Tube |
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AOK40B60D | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube |
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AOK40B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 80A 278000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK40B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 111W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 53ns Turn-off time: 102ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.3mJ Turn-on switching energy: 1.55mJ |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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AOK40B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 111W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 53ns Turn-off time: 102ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.3mJ Turn-on switching energy: 1.55mJ кількість в упаковці: 1 шт |
на замовлення 222 шт: термін постачання 14-21 дні (днів) |
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| AOK40B65GQ1 | Alpha & Omega Semiconductor |
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
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AOK40B65H1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube |
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AOK40B65H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 63nC Kind of package: tube Turn-on time: 82ns Turn-off time: 173ns Collector-emitter saturation voltage: 1.9V Turn-off switching energy: 0.46mJ Turn-on switching energy: 1.27mJ |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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AOK40B65H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 150W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 63nC Kind of package: tube Turn-on time: 82ns Turn-off time: 173ns Collector-emitter saturation voltage: 1.9V Turn-off switching energy: 0.46mJ Turn-on switching energy: 1.27mJ кількість в упаковці: 1 шт |
на замовлення 150 шт: термін постачання 14-21 дні (днів) |
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AOK40B65H2AL | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube |
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AOK40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 152ns Collector-emitter saturation voltage: 2.05V Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ |
на замовлення 156 шт: термін постачання 21-30 дні (днів) |
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AOK40B65H2AL | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube |
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AOK40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 61nC Kind of package: tube Turn-on time: 64ns Turn-off time: 152ns Collector-emitter saturation voltage: 2.05V Turn-off switching energy: 0.54mJ Turn-on switching energy: 1.17mJ кількість в упаковці: 1 шт |
на замовлення 156 шт: термін постачання 14-21 дні (днів) |
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| AOK40B65H2AL_002 | Alpha & Omega Semiconductor | AOK40B65H2AL_002 |
на замовлення 32640 шт: термін постачання 21-31 дні (днів) |
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| AOK40B65HQ2 | Alpha & Omega Semiconductor |
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
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| AOK40B65HQ3 | Alpha & Omega Semiconductor |
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
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AOK40B65M3 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube |
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AOK40N30L | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247 Mounting: THT Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 85mΩ Drain current: 25A Drain-source voltage: 300V Case: TO247 Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V |
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AOK40N30L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247 |
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AOK40N30L | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247 Mounting: THT Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 85mΩ Drain current: 25A Drain-source voltage: 300V Case: TO247 Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 240 шт |
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AOK42S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247 |
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| AOK50B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK50B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 168A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 98ns Turn-off time: 104ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.5mJ Turn-on switching energy: 2.37mJ |
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AOK50B60D1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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AOK50B60D1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 168A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 98ns Turn-off time: 104ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.5mJ Turn-on switching energy: 2.37mJ кількість в упаковці: 1 шт |
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AOK50B65H1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 100A 375W 3-Pin(3+Tab) TO-247 Tube |
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AOK50B65H1 | Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube |
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AOK50B65H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ Type of transistor: IGBT Collector current: 50A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 111ns Turn-off time: 206ns Collector-emitter voltage: 650V Power dissipation: 188W Kind of package: tube Collector-emitter saturation voltage: 1.9V Gate charge: 76nC Turn-on switching energy: 1.92mJ Turn-off switching energy: 0.85mJ |
на замовлення 154 шт: термін постачання 21-30 дні (днів) |
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AOK50B65H1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ Type of transistor: IGBT Collector current: 50A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 111ns Turn-off time: 206ns Collector-emitter voltage: 650V Power dissipation: 188W Kind of package: tube Collector-emitter saturation voltage: 1.9V Gate charge: 76nC Turn-on switching energy: 1.92mJ Turn-off switching energy: 0.85mJ кількість в упаковці: 1 шт |
на замовлення 154 шт: термін постачання 14-21 дні (днів) |
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AOK50B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 102nC Kind of package: tube Turn-on time: 114ns Turn-off time: 268ns Collector-emitter saturation voltage: 1.72V Turn-off switching energy: 1.03mJ Turn-on switching energy: 2.09mJ |
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AOK50B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 102nC Kind of package: tube Turn-on time: 114ns Turn-off time: 268ns Collector-emitter saturation voltage: 1.72V Turn-off switching energy: 1.03mJ Turn-on switching energy: 2.09mJ кількість в упаковці: 1 шт |
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AOK53S60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 |
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AOK53S60 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 |
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AOK53S60L | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 |
товар відсутній |
| AOK27S60L |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R
товар відсутній
| AOK29S50L |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK29S50L |
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Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B120D2 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
на замовлення 206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 321.97 грн |
| 3+ | 269 грн |
| 5+ | 205.31 грн |
| 12+ | 194.07 грн |
| AOK30B120D2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B120D2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 170W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Turn-off time: 340ns
Collector-emitter saturation voltage: 1.77V
Turn-off switching energy: 1.28mJ
кількість в упаковці: 1 шт
на замовлення 206 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 386.36 грн |
| 3+ | 335.22 грн |
| 5+ | 246.37 грн |
| 12+ | 232.88 грн |
| AOK30B135W1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 161.97 грн |
| AOK30B135W1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.8V
Collector current: 30A
Pulsed collector current: 120A
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 170W
Kind of package: tube
Gate charge: 62nC
Turn-off switching energy: 1.47mJ
Mounting: THT
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.8V
Collector current: 30A
Pulsed collector current: 120A
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 170W
Kind of package: tube
Gate charge: 62nC
Turn-off switching energy: 1.47mJ
Mounting: THT
Case: TO247
на замовлення 58 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.1 грн |
| 3+ | 218.8 грн |
| 5+ | 189.57 грн |
| 13+ | 179.08 грн |
| AOK30B135W1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.8V
Collector current: 30A
Pulsed collector current: 120A
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 170W
Kind of package: tube
Gate charge: 62nC
Turn-off switching energy: 1.47mJ
Mounting: THT
Case: TO247
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Collector-emitter voltage: 1.35kV
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.8V
Collector current: 30A
Pulsed collector current: 120A
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 170W
Kind of package: tube
Gate charge: 62nC
Turn-off switching energy: 1.47mJ
Mounting: THT
Case: TO247
кількість в упаковці: 1 шт
на замовлення 58 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 320.52 грн |
| 3+ | 272.66 грн |
| 5+ | 227.49 грн |
| 13+ | 214.9 грн |
| 240+ | 206.81 грн |
| AOK30B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector current: 30A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 34nC
Turn-on switching energy: 1.1mJ
Turn-off switching energy: 0.24mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector current: 30A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 34nC
Turn-on switching energy: 1.1mJ
Turn-off switching energy: 0.24mJ
на замовлення 164 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.88 грн |
| 9+ | 104.9 грн |
| 24+ | 98.91 грн |
| AOK30B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector current: 30A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 34nC
Turn-on switching energy: 1.1mJ
Turn-off switching energy: 0.24mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ
Type of transistor: IGBT
Collector current: 30A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Turn-on time: 66ns
Turn-off time: 89ns
Collector-emitter voltage: 600V
Power dissipation: 83W
Kind of package: tube
Collector-emitter saturation voltage: 1.85V
Gate charge: 34nC
Turn-on switching energy: 1.1mJ
Turn-off switching energy: 0.24mJ
кількість в упаковці: 1 шт
на замовлення 164 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.7 грн |
| 3+ | 168.08 грн |
| 9+ | 125.88 грн |
| 24+ | 118.69 грн |
| AOK30B65M2 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK30B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
товар відсутній
| AOK30B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ
Turn-off time: 193ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.66V
Collector current: 30A
Turn-off switching energy: 0.41mJ
Mounting: THT
Turn-on switching energy: 1.02mJ
Collector-emitter voltage: 650V
Power dissipation: 150W
Gate charge: 63nC
Pulsed collector current: 90A
Type of transistor: IGBT
Turn-on time: 76ns
Kind of package: tube
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| AOK40B120H1 |
|
Виробник: Alpha & Omega Semiconductor
1200V, 40A AlphaIGBT TM With Soft and Fast Recovery Anti-parallel Diode
1200V, 40A AlphaIGBT TM With Soft and Fast Recovery Anti-parallel Diode
товар відсутній
| AOK40B120H1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Turn-on time: 133ns
Turn-off time: 375ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Turn-on time: 133ns
Turn-off time: 375ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
товар відсутній
| AOK40B120H1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Turn-on time: 133ns
Turn-off time: 375ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Turn-on time: 133ns
Turn-off time: 375ns
Collector-emitter saturation voltage: 1.8V
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK40B120M1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 1200V 80A 600000mW 3-Pin(3+Tab) TO-247
Trans IGBT Chip N-CH 1200V 80A 600000mW 3-Pin(3+Tab) TO-247
товар відсутній
| AOK40B120N1 |
|
Виробник: Alpha & Omega Semiconductor
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode
товар відсутній
| AOK40B120N1 |
|
Виробник: Alpha & Omega Semiconductor
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode
Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode
товар відсутній
| AOK40B120P1 |
|
Виробник: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
| AOK40B120P1 |
|
Виробник: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
| AOK40B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 80A 312500mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 312500mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK40B60D |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK40B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 80A 278000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 80A 278000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK40B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 111W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 102ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.3mJ
Turn-on switching energy: 1.55mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 111W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 102ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.3mJ
Turn-on switching energy: 1.55mJ
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 289.69 грн |
| 3+ | 242.03 грн |
| 5+ | 185.08 грн |
| 13+ | 174.59 грн |
| AOK40B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 111W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 102ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.3mJ
Turn-on switching energy: 1.55mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 111W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 53ns
Turn-off time: 102ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.3mJ
Turn-on switching energy: 1.55mJ
кількість в упаковці: 1 шт
на замовлення 222 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.63 грн |
| 3+ | 301.6 грн |
| 5+ | 222.09 грн |
| 13+ | 209.51 грн |
| AOK40B65GQ1 |
|
Виробник: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
| AOK40B65H1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK40B65H1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Turn-on time: 82ns
Turn-off time: 173ns
Collector-emitter saturation voltage: 1.9V
Turn-off switching energy: 0.46mJ
Turn-on switching energy: 1.27mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Turn-on time: 82ns
Turn-off time: 173ns
Collector-emitter saturation voltage: 1.9V
Turn-off switching energy: 0.46mJ
Turn-on switching energy: 1.27mJ
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.86 грн |
| 3+ | 196.32 грн |
| 6+ | 170.09 грн |
| 15+ | 160.35 грн |
| AOK40B65H1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Turn-on time: 82ns
Turn-off time: 173ns
Collector-emitter saturation voltage: 1.9V
Turn-off switching energy: 0.46mJ
Turn-on switching energy: 1.27mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 150W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Turn-on time: 82ns
Turn-off time: 173ns
Collector-emitter saturation voltage: 1.9V
Turn-off switching energy: 0.46mJ
Turn-on switching energy: 1.27mJ
кількість в упаковці: 1 шт
на замовлення 150 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.63 грн |
| 3+ | 244.64 грн |
| 6+ | 204.11 грн |
| 15+ | 192.42 грн |
| 240+ | 185.23 грн |
| AOK40B65H2AL |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK40B65H2AL |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
на замовлення 156 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.64 грн |
| 4+ | 119.89 грн |
| 10+ | 91.42 грн |
| 27+ | 86.92 грн |
| AOK40B65H2AL |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK40B65H2AL |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
кількість в упаковці: 1 шт
на замовлення 156 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.36 грн |
| 3+ | 149.4 грн |
| 10+ | 109.7 грн |
| 27+ | 104.3 грн |
| AOK40B65H2AL_002 |
Виробник: Alpha & Omega Semiconductor
AOK40B65H2AL_002
AOK40B65H2AL_002
на замовлення 32640 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 240+ | 151.5 грн |
| 8160+ | 139.11 грн |
| 16320+ | 130.11 грн |
| 24480+ | 118.96 грн |
| AOK40B65HQ2 |
|
Виробник: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
| AOK40B65HQ3 |
|
Виробник: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
| AOK40B65M3 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK40N30L |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Drain current: 25A
Drain-source voltage: 300V
Case: TO247
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Drain current: 25A
Drain-source voltage: 300V
Case: TO247
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| AOK40N30L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK40N30L |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Drain current: 25A
Drain-source voltage: 300V
Case: TO247
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 240 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 85mΩ
Drain current: 25A
Drain-source voltage: 300V
Case: TO247
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 240 шт
товар відсутній
| AOK42S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK50B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK50B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 168A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 98ns
Turn-off time: 104ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 2.37mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 168A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 98ns
Turn-off time: 104ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 2.37mJ
товар відсутній
| AOK50B60D1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK50B60D1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 168A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 98ns
Turn-off time: 104ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 2.37mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 125W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 168A
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 98ns
Turn-off time: 104ns
Collector-emitter saturation voltage: 1.85V
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 2.37mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK50B65H1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 100A 375W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 100A 375W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK50B65H1 |
|
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| AOK50B65H1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Type of transistor: IGBT
Collector current: 50A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 111ns
Turn-off time: 206ns
Collector-emitter voltage: 650V
Power dissipation: 188W
Kind of package: tube
Collector-emitter saturation voltage: 1.9V
Gate charge: 76nC
Turn-on switching energy: 1.92mJ
Turn-off switching energy: 0.85mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Type of transistor: IGBT
Collector current: 50A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 111ns
Turn-off time: 206ns
Collector-emitter voltage: 650V
Power dissipation: 188W
Kind of package: tube
Collector-emitter saturation voltage: 1.9V
Gate charge: 76nC
Turn-on switching energy: 1.92mJ
Turn-off switching energy: 0.85mJ
на замовлення 154 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.94 грн |
| 3+ | 223.29 грн |
| 5+ | 194.07 грн |
| 13+ | 183.58 грн |
| AOK50B65H1 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Type of transistor: IGBT
Collector current: 50A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 111ns
Turn-off time: 206ns
Collector-emitter voltage: 650V
Power dissipation: 188W
Kind of package: tube
Collector-emitter saturation voltage: 1.9V
Gate charge: 76nC
Turn-on switching energy: 1.92mJ
Turn-off switching energy: 0.85mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ
Type of transistor: IGBT
Collector current: 50A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 111ns
Turn-off time: 206ns
Collector-emitter voltage: 650V
Power dissipation: 188W
Kind of package: tube
Collector-emitter saturation voltage: 1.9V
Gate charge: 76nC
Turn-on switching energy: 1.92mJ
Turn-off switching energy: 0.85mJ
кількість в упаковці: 1 шт
на замовлення 154 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 326.33 грн |
| 3+ | 278.26 грн |
| 5+ | 232.88 грн |
| 13+ | 220.3 грн |
| 240+ | 211.3 грн |
| AOK50B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 268ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.03mJ
Turn-on switching energy: 2.09mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 268ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.03mJ
Turn-on switching energy: 2.09mJ
товар відсутній
| AOK50B65M2 |
|
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 268ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.03mJ
Turn-on switching energy: 2.09mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 268ns
Collector-emitter saturation voltage: 1.72V
Turn-off switching energy: 1.03mJ
Turn-on switching energy: 2.09mJ
кількість в упаковці: 1 шт
товар відсутній
| AOK53S60 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK53S60 |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
товар відсутній
| AOK53S60L |
|
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247
товар відсутній