Продукція > YANGJIE TECHNOLOGY > Всі товари виробника YANGJIE TECHNOLOGY (4545) > Сторінка 48 з 76
Фото | Назва | Виробник | Інформація |
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MG25P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 175 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG25P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Case: P3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Application: Inverter; motors |
товар відсутній |
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MG25P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Case: P3 Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 50A Application: Inverter; motors кількість в упаковці: 1 шт |
товар відсутній |
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MG300HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG300HF12TLC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1700 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG35P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG35P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P3 Gate-emitter voltage: ±20V Collector current: 35A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge |
товар відсутній |
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MG35P12P3 | Yangjie Technology |
Description: Transistors - IGBTs - Modules P3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 215 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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MG35P12P3 | YANGJIE TECHNOLOGY |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3 Application: Inverter; motors Mechanical mounting: screw Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Case: P3 Gate-emitter voltage: ±20V Collector current: 35A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge кількість в упаковці: 1 шт |
товар відсутній |
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MG400HF12MRC2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A NTC Thermistor: No Supplier Device Package: C2 Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1925 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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MG40HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG40P12E1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG50HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 400 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG50HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 485 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG50P12E1A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 166 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MG50P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 227 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG50P12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 227 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG50U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw Collector current: 50A Case: GJ-U Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |
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MG50U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw Collector current: 50A Case: GJ-U Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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MG50UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw Collector current: 50A Case: GJ-UZ Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |
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MG50UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw Collector current: 50A Case: GJ-UZ Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Application: Inverter; motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 1 шт |
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MG75HF12LEC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A NTC Thermistor: No IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 657 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG75HF12TLC1 | Yangjie Technology |
Description: Transistors - IGBTs - Modules C1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A NTC Thermistor: No IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 530 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MG75P12E2 | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 442 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG75P12E2A | Yangjie Technology |
Description: Transistors - IGBTs - Modules E2 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 300 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MG75U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw Case: GJ-U Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Pulsed collector current: 150A Max. off-state voltage: 1.2kV Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: screw |
товар відсутній |
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MG75U12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw Case: GJ-U Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Pulsed collector current: 150A Max. off-state voltage: 1.2kV Collector current: 75A Gate-emitter voltage: ±20V Electrical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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MG75U12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 420 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MG75UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw Case: GJ-UZ Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 75A Electrical mounting: screw |
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MG75UZ12GJ | YANGJIE TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw Case: GJ-UZ Application: Inverter; motors Mechanical mounting: screw Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 75A Electrical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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MG75UZ12MRGJ | Yangjie Technology |
Description: Transistors - IGBTs - Modules GJ Packaging: Bulk Package / Case: SOT-227-4 Mounting Type: Chassis Mount Input: Standard Configuration: Single NTC Thermistor: No Supplier Device Package: SOT-227 Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MMBD4148Q | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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MMBD4448V | Yangjie Technology |
Description: Diodes - Rectifiers - Single SOT Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 250mA Supplier Device Package: SOT-563 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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MMBT2222A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 3025 шт: термін постачання 21-30 дні (днів) |
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MMBT2222A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz кількість в упаковці: 25 шт |
на замовлення 3025 шт: термін постачання 14-21 дні (днів) |
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MMBT2222AQ | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry |
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MMBT2222AQ | Yangjie Technology |
Description: SOT-23 NPN 0.3W 0.6A 75V Transis Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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MMBT2222AQ | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry кількість в упаковці: 25 шт |
товар відсутній |
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MMBT2907A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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MMBT2907A | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz кількість в упаковці: 5 шт |
на замовлення 800 шт: термін постачання 14-21 дні (днів) |
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MMBT2907AQ | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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MMBT2907AQ | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
на замовлення 1626 шт: термін постачання 21-30 дні (днів) |
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MMBT2907AQ | YANGJIE TECHNOLOGY |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 1626 шт: термін постачання 14-21 дні (днів) |
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MMBT3904 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 4150 шт: термін постачання 21-30 дні (днів) |
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MMBT3904 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz кількість в упаковці: 25 шт |
на замовлення 4150 шт: термін постачання 14-21 дні (днів) |
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MMBT3904M3 | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.1W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape |
товар відсутній |
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MMBT3904M3 | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.1W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
товар відсутній |
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MMBT3904Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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MMBT3906 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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MMBT3906 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz кількість в упаковці: 50 шт |
на замовлення 350 шт: термін постачання 14-21 дні (днів) |
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MMBT3906Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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mmbt4401 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
на замовлення 5400 шт: термін постачання 21-30 дні (днів) |
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mmbt4401 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz кількість в упаковці: 5 шт |
на замовлення 5400 шт: термін постачання 14-21 дні (днів) |
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MMBT4401Q | Yangjie Technology |
Description: SOT-23 NPN 0.3W 0.6A 60V Transis Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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MMBT4401Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
на замовлення 2403 шт: термін постачання 21-30 дні (днів) |
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MMBT4401Q | YANGJIE TECHNOLOGY |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2403 шт: термін постачання 14-21 дні (днів) |
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MMBT4403 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.3W; SOT23 Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 40V Current gain: 100...300 Collector current: 0.6A Type of transistor: PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
на замовлення 2150 шт: термін постачання 21-30 дні (днів) |
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MMBT4403 | YANGJIE TECHNOLOGY |
![]() Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.3W; SOT23 Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 40V Current gain: 100...300 Collector current: 0.6A Type of transistor: PNP Power dissipation: 0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD кількість в упаковці: 50 шт |
на замовлення 2150 шт: термін постачання 14-21 дні (днів) |
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MMBT4403Q | Yangjie Technology |
Description: Transistors - Bipolar (BJT) - Si Packaging: Tape & Reel (TR) Part Status: Active |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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MMBT5401 | YANGJIE TECHNOLOGY |
![]() ![]() ![]() ![]() ![]() ![]() Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.3W; SOT23 Mounting: SMD Kind of package: reel; tape Case: SOT23 Power dissipation: 0.3W Collector-emitter voltage: 160V Current gain: 100...300 Collector current: 0.6A Type of transistor: PNP Polarisation: bipolar Frequency: 100MHz |
на замовлення 1750 шт: термін постачання 21-30 дні (днів) |
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MG25P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 2737.48 грн |
120+ | 2489.67 грн |
240+ | 2343.17 грн |
480+ | 2061.56 грн |
960+ | 1855.43 грн |
2400+ | 1717.94 грн |
MG25P12P3 |
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Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
товар відсутній
MG25P12P3 |
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Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Case: P3
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Application: Inverter; motors
кількість в упаковці: 1 шт
товар відсутній
MG300HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 7030.8 грн |
20+ | 6394.26 грн |
40+ | 6018.17 грн |
80+ | 5294.81 грн |
160+ | 4765.33 грн |
400+ | 4412.31 грн |
MG300HF12TLC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 18.4 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 6016.3 грн |
30+ | 5431.39 грн |
60+ | 5069.29 грн |
120+ | 4417.53 грн |
240+ | 4077.72 грн |
600+ | 3601.98 грн |
MG35P12E1A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 4052.07 грн |
40+ | 3685.16 грн |
80+ | 3468.41 грн |
160+ | 3051.49 грн |
320+ | 2746.34 грн |
800+ | 2542.93 грн |
MG35P12P3 |
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Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
товар відсутній
MG35P12P3 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 3436.5 грн |
120+ | 3125.36 грн |
240+ | 2941.49 грн |
480+ | 2587.99 грн |
960+ | 2329.19 грн |
2400+ | 2156.64 грн |
MG35P12P3 |
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Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
товар відсутній
MG400HF12MRC2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1925 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: Transistors - IGBTs - Modules C2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: C2
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1925 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 9206.64 грн |
20+ | 8373.17 грн |
40+ | 7880.65 грн |
80+ | 6933.41 грн |
160+ | 6240.13 грн |
400+ | 5777.85 грн |
MG40HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 2082.24 грн |
50+ | 1893.67 грн |
100+ | 1782.29 грн |
200+ | 1568.09 грн |
400+ | 1411.3 грн |
1000+ | 1306.77 грн |
MG40P12E1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 4096.73 грн |
40+ | 3725.86 грн |
80+ | 3506.65 грн |
160+ | 3085.2 грн |
320+ | 2776.65 грн |
800+ | 2571 грн |
MG50HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 50A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 2158.5 грн |
50+ | 1963.05 грн |
100+ | 1847.61 грн |
200+ | 1625.51 грн |
400+ | 1462.95 грн |
1000+ | 1354.62 грн |
MG50HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 485 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 485 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 2587.54 грн |
50+ | 2353.31 грн |
100+ | 2214.85 грн |
200+ | 1948.67 грн |
400+ | 1753.76 грн |
1000+ | 1623.88 грн |
MG50P12E1A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 166 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.6 nF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 5238.51 грн |
40+ | 4764.27 грн |
80+ | 4484.08 грн |
160+ | 3945.12 грн |
320+ | 3550.6 грн |
800+ | 3287.59 грн |
MG50P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 6320.13 грн |
30+ | 5747.93 грн |
60+ | 5409.81 грн |
120+ | 4759.58 грн |
240+ | 4283.64 грн |
600+ | 3966.33 грн |
MG50P12E2A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 227 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 6319.25 грн |
30+ | 5747.2 грн |
60+ | 5409.15 грн |
120+ | 4758.97 грн |
240+ | 4283.1 грн |
600+ | 3965.85 грн |
MG50U12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
MG50U12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-U; screw
Collector current: 50A
Case: GJ-U
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
MG50UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
MG50UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; GJ-UZ; screw
Collector current: 50A
Case: GJ-UZ
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Application: Inverter; motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
MG75HF12LEC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 657 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
NTC Thermistor: No
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 657 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 2720.95 грн |
50+ | 2474.61 грн |
100+ | 2328.98 грн |
200+ | 2049.05 грн |
400+ | 1844.15 грн |
1000+ | 1707.54 грн |
MG75HF12TLC1 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 530 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
Description: Transistors - IGBTs - Modules C1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
NTC Thermistor: No
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 530 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 2824.73 грн |
50+ | 2568.97 грн |
100+ | 2417.91 грн |
200+ | 2127.28 грн |
400+ | 1914.56 грн |
1000+ | 1772.72 грн |
MG75P12E2 |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 442 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 7092.97 грн |
30+ | 6450.82 грн |
60+ | 6071.35 грн |
120+ | 5341.61 грн |
240+ | 4807.49 грн |
600+ | 4451.37 грн |
MG75P12E2A |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: Transistors - IGBTs - Modules E2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 7099.49 грн |
30+ | 6456.83 грн |
60+ | 6077 грн |
120+ | 5346.57 грн |
240+ | 4811.91 грн |
600+ | 4455.52 грн |
MG75U12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
товар відсутній
MG75U12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-U; screw
Case: GJ-U
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Collector current: 75A
Gate-emitter voltage: ±20V
Electrical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MG75U12MRGJ |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 420 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 2112.93 грн |
125+ | 1921.63 грн |
250+ | 1808.58 грн |
500+ | 1591.19 грн |
1000+ | 1432.09 грн |
2500+ | 1326.01 грн |
MG75UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
товар відсутній
MG75UZ12GJ |
Виробник: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 75A; GJ-UZ; screw
Case: GJ-UZ
Application: Inverter; motors
Mechanical mounting: screw
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Electrical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
MG75UZ12MRGJ |
Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: Transistors - IGBTs - Modules GJ
Packaging: Bulk
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 2263.88 грн |
125+ | 2058.93 грн |
250+ | 1937.77 грн |
500+ | 1704.89 грн |
1000+ | 1534.38 грн |
2500+ | 1420.74 грн |
MMBD4148Q |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.43 грн |
15000+ | 1.3 грн |
30000+ | 1.23 грн |
60000+ | 1.09 грн |
120000+ | 0.95 грн |
300000+ | 0.88 грн |
MMBD4448V |
Виробник: Yangjie Technology
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-563
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: Diodes - Rectifiers - Single SOT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: SOT-563
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.88 грн |
15000+ | 1.67 грн |
30000+ | 1.59 грн |
60000+ | 1.43 грн |
120000+ | 1.29 грн |
300000+ | 1.16 грн |
MMBT2222A |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 3025 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 2.15 грн |
325+ | 1.19 грн |
500+ | 1.07 грн |
1025+ | 0.82 грн |
2825+ | 0.77 грн |
MMBT2222A |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 25 шт
на замовлення 3025 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
125+ | 2.58 грн |
200+ | 1.48 грн |
500+ | 1.29 грн |
1025+ | 0.98 грн |
2825+ | 0.93 грн |
MMBT2222AQ |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
товар відсутній
MMBT2222AQ |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.3W 0.6A 75V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 NPN 0.3W 0.6A 75V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.58 грн |
15000+ | 1.45 грн |
30000+ | 1.3 грн |
60000+ | 1.16 грн |
120000+ | 1.09 грн |
300000+ | 0.95 грн |
MMBT2222AQ |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
кількість в упаковці: 25 шт
товар відсутній
MMBT2907A |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
275+ | 1.42 грн |
385+ | 0.94 грн |
500+ | 0.83 грн |
MMBT2907A |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
кількість в упаковці: 5 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
кількість в упаковці: 5 шт
на замовлення 800 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
165+ | 1.7 грн |
235+ | 1.17 грн |
500+ | 1 грн |
1170+ | 0.86 грн |
3210+ | 0.82 грн |
MMBT2907AQ |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.73 грн |
15000+ | 1.59 грн |
30000+ | 1.52 грн |
60000+ | 1.29 грн |
120000+ | 1.22 грн |
300000+ | 1.09 грн |
MMBT2907AQ |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
на замовлення 1626 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
34+ | 11.7 грн |
65+ | 5.58 грн |
94+ | 3.88 грн |
131+ | 2.78 грн |
250+ | 2.11 грн |
500+ | 1.77 грн |
962+ | 0.87 грн |
MMBT2907AQ |
Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1626 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.04 грн |
39+ | 6.95 грн |
56+ | 4.66 грн |
100+ | 3.34 грн |
250+ | 2.54 грн |
500+ | 2.13 грн |
962+ | 1.04 грн |
MMBT3904 |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 4150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 2.15 грн |
525+ | 0.72 грн |
575+ | 0.64 грн |
1550+ | 0.54 грн |
MMBT3904 |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 25 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
кількість в упаковці: 25 шт
на замовлення 4150 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
125+ | 2.58 грн |
325+ | 0.89 грн |
500+ | 0.76 грн |
1550+ | 0.65 грн |
4225+ | 0.62 грн |
MMBT3904M3 |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
товар відсутній
MMBT3904M3 |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.1W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.1W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
MMBT3904Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.43 грн |
15000+ | 1.3 грн |
30000+ | 1.23 грн |
60000+ | 1.09 грн |
120000+ | 0.95 грн |
300000+ | 0.88 грн |
MMBT3906 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 1.44 грн |
350+ | 0.72 грн |
MMBT3906 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 50 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 50 шт
на замовлення 350 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 1.72 грн |
350+ | 0.88 грн |
1000+ | 0.76 грн |
1550+ | 0.66 грн |
4250+ | 0.62 грн |
MMBT3906Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.43 грн |
15000+ | 1.3 грн |
30000+ | 1.23 грн |
60000+ | 1.09 грн |
120000+ | 0.95 грн |
300000+ | 0.88 грн |
mmbt4401 |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
на замовлення 5400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
270+ | 1.45 грн |
415+ | 0.88 грн |
500+ | 0.77 грн |
1200+ | 0.7 грн |
3300+ | 0.67 грн |
mmbt4401 |
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Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
кількість в упаковці: 5 шт
на замовлення 5400 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
165+ | 1.74 грн |
250+ | 1.09 грн |
500+ | 0.93 грн |
1200+ | 0.84 грн |
3000+ | 0.83 грн |
3300+ | 0.8 грн |
MMBT4401Q |
Виробник: Yangjie Technology
Description: SOT-23 NPN 0.3W 0.6A 60V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23 NPN 0.3W 0.6A 60V Transis
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.43 грн |
15000+ | 1.3 грн |
30000+ | 1.23 грн |
60000+ | 1.09 грн |
120000+ | 0.95 грн |
300000+ | 0.88 грн |
MMBT4401Q |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
на замовлення 2403 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 13.26 грн |
59+ | 6.16 грн |
83+ | 4.37 грн |
117+ | 3.11 грн |
250+ | 2.36 грн |
500+ | 1.99 грн |
935+ | 0.91 грн |
MMBT4401Q |
Виробник: YANGJIE TECHNOLOGY
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2403 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 15.91 грн |
36+ | 7.67 грн |
50+ | 5.25 грн |
100+ | 3.73 грн |
250+ | 2.83 грн |
500+ | 2.39 грн |
935+ | 1.09 грн |
MMBT4403 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.3W; SOT23
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.6A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.3W; SOT23
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.6A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 2150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 1.34 грн |
450+ | 0.81 грн |
550+ | 0.72 грн |
1300+ | 0.64 грн |
MMBT4403 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.3W; SOT23
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.6A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 50 шт
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.3W; SOT23
Case: SOT23
Frequency: 200MHz
Collector-emitter voltage: 40V
Current gain: 100...300
Collector current: 0.6A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 50 шт
на замовлення 2150 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 1.61 грн |
300+ | 1.01 грн |
500+ | 0.86 грн |
1300+ | 0.77 грн |
3600+ | 0.73 грн |
12000+ | 0.72 грн |
MMBT4403Q |
Виробник: Yangjie Technology
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - Bipolar (BJT) - Si
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.65 грн |
15000+ | 1.52 грн |
30000+ | 1.45 грн |
60000+ | 1.29 грн |
120000+ | 1.16 грн |
300000+ | 1.02 грн |
MMBT5401 |
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Виробник: YANGJIE TECHNOLOGY
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.3W; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Power dissipation: 0.3W
Collector-emitter voltage: 160V
Current gain: 100...300
Collector current: 0.6A
Type of transistor: PNP
Polarisation: bipolar
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.3W; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Power dissipation: 0.3W
Collector-emitter voltage: 160V
Current gain: 100...300
Collector current: 0.6A
Type of transistor: PNP
Polarisation: bipolar
Frequency: 100MHz
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
300+ | 1.45 грн |
350+ | 1.09 грн |
500+ | 0.96 грн |
1000+ | 0.86 грн |