Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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WMS175DN10LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Case: SOP8 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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WMS175N10HG4 | WAYON | WMS175N10HG4-CYG SMD N channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMS175N10LG4 | WAYON | WMS175N10LG4-CYG SMD N channel transistors |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMS17P03TS | WAYON | WMS17P03TS-CYG SMD P channel transistors |
товар відсутній |
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WMS240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOP8 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMS240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOP8 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMS690N15HG2 | WAYON | WMS690N15HG2-CYG SMD N channel transistors |
товар відсутній |
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WMT04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT04N15TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT04N15TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT04P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT04P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT05N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT05N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT05N12TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT05N12TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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WMT07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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WMT07N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced |
на замовлення 490 шт: термін постачання 21-30 дні (днів) |
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WMT07N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT223 Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 490 шт: термін постачання 14-21 дні (днів) |
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WMT1N80D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Case: SOT223 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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WMT1N80D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Case: SOT223 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
товар відсутній |
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WMT4N65D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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WMT4N65D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
товар відсутній |
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WMU080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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WMU080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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WMX3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
на замовлення 207 шт: термін постачання 21-30 дні (днів) |
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WMX3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 207 шт: термін постачання 14-21 дні (днів) |
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WMX4N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.4Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhanced |
на замовлення 275 шт: термін постачання 21-30 дні (днів) |
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WMX4N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.4Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 275 шт: термін постачання 14-21 дні (днів) |
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WMZ13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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WMZ13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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WMZ26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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WMZ26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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WMZ26N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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WMZ26N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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WMZ36N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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WMZ36N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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WMZ53N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 280W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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WMZ53N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 280W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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WS05-4RUL | WAYON | Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul |
на замовлення 300 шт: термін постачання 28-31 дні (днів) |
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WSRSIC002120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: DPAK Kind of package: tape Max. forward impulse current: 18A Max. forward voltage: 1.36V Leakage current: 1µA |
товар відсутній |
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WSRSIC002120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: DPAK Kind of package: tape Max. forward impulse current: 18A Max. forward voltage: 1.36V Leakage current: 1µA кількість в упаковці: 1 шт |
товар відсутній |
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WSRSIC004065NPD | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN5x6 Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.38V Leakage current: 0.8µA |
товар відсутній |
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WSRSIC004065NPD | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DFN5x6 Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.38V Leakage current: 0.8µA кількість в упаковці: 1 шт |
товар відсутній |
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WSRSIC004065NPF | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 30A Max. forward voltage: 1.38V Leakage current: 0.8µA |
товар відсутній |
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WSRSIC004065NPF | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 30A Max. forward voltage: 1.38V Leakage current: 0.8µA кількість в упаковці: 1 шт |
товар відсутній |
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WSRSIC004065NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.38V Leakage current: 0.8µA |
товар відсутній |
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WSRSIC004065NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.38V Leakage current: 0.8µA кількість в упаковці: 1 шт |
товар відсутній |
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WSRSIC004120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.36V Leakage current: 1.5µA |
товар відсутній |
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WSRSIC004120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.36V Leakage current: 1.5µA кількість в упаковці: 1 шт |
товар відсутній |
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WSRSIC005120NNI | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220ACIns Max. forward voltage: 1.4V Leakage current: 1µA Max. forward impulse current: 43A Kind of package: tube |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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WSRSIC005120NNI | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220ACIns Max. forward voltage: 1.4V Leakage current: 1µA Max. forward impulse current: 43A Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 50 шт: термін постачання 14-21 дні (днів) |
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WSRSIC005120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.38V Leakage current: 2µA Max. forward impulse current: 43A Kind of package: tape |
товар відсутній |
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WSRSIC005120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 1.38V Leakage current: 2µA Max. forward impulse current: 43A Kind of package: tape кількість в упаковці: 1 шт |
товар відсутній |
WMS175DN10LG4 |
Виробник: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOP8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOP8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMS175N10HG4 |
Виробник: WAYON
WMS175N10HG4-CYG SMD N channel transistors
WMS175N10HG4-CYG SMD N channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 43.11 грн |
73+ | 14.02 грн |
201+ | 13.31 грн |
WMS175N10LG4 |
Виробник: WAYON
WMS175N10LG4-CYG SMD N channel transistors
WMS175N10LG4-CYG SMD N channel transistors
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 42.07 грн |
66+ | 15.61 грн |
181+ | 14.81 грн |
WMS240N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOP8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOP8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 30.86 грн |
23+ | 16.68 грн |
27+ | 13.67 грн |
80+ | 10.8 грн |
220+ | 10.21 грн |
WMS240N10LG2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOP8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOP8
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.03 грн |
14+ | 20.79 грн |
25+ | 16.4 грн |
80+ | 12.96 грн |
220+ | 12.26 грн |
4000+ | 11.73 грн |
WMT04N10TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 29.28 грн |
33+ | 11.24 грн |
44+ | 8.45 грн |
100+ | 7.49 грн |
128+ | 6.76 грн |
250+ | 6.69 грн |
350+ | 6.39 грн |
WMT04N10TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.13 грн |
20+ | 14.01 грн |
27+ | 10.14 грн |
100+ | 8.99 грн |
128+ | 8.11 грн |
250+ | 8.02 грн |
350+ | 7.67 грн |
WMT04N15TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 31.65 грн |
21+ | 17.93 грн |
25+ | 16.17 грн |
67+ | 12.86 грн |
184+ | 12.12 грн |
WMT04N15TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.98 грн |
13+ | 22.34 грн |
25+ | 19.4 грн |
67+ | 15.43 грн |
184+ | 14.55 грн |
1000+ | 14.37 грн |
2500+ | 13.84 грн |
WMT04P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 42.73 грн |
23+ | 16.61 грн |
30+ | 12.56 грн |
86+ | 9.99 грн |
237+ | 9.48 грн |
WMT04P06TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.28 грн |
14+ | 20.69 грн |
25+ | 15.08 грн |
86+ | 11.99 грн |
237+ | 11.37 грн |
1000+ | 11.2 грн |
2500+ | 10.85 грн |
WMT04P10TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 31.65 грн |
24+ | 15.36 грн |
27+ | 13.81 грн |
78+ | 11.1 грн |
214+ | 10.43 грн |
WMT04P10TS |
Виробник: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.98 грн |
15+ | 19.14 грн |
25+ | 16.58 грн |
78+ | 13.31 грн |
214+ | 12.52 грн |
1000+ | 12.26 грн |
2500+ | 11.82 грн |
WMT05N10T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 41.94 грн |
23+ | 16.31 грн |
30+ | 12.34 грн |
88+ | 9.85 грн |
241+ | 9.26 грн |
WMT05N10T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 50.33 грн |
14+ | 20.33 грн |
25+ | 14.81 грн |
88+ | 11.82 грн |
241+ | 11.11 грн |
1000+ | 10.93 грн |
2500+ | 10.58 грн |
WMT05N12TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 34.03 грн |
23+ | 16.53 грн |
25+ | 14.84 грн |
73+ | 11.9 грн |
199+ | 11.24 грн |
WMT05N12TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 40.83 грн |
14+ | 20.6 грн |
25+ | 17.81 грн |
73+ | 14.28 грн |
199+ | 13.49 грн |
1000+ | 13.23 грн |
2500+ | 12.79 грн |
WMT07N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 35.61 грн |
30+ | 12.27 грн |
43+ | 8.67 грн |
100+ | 7.72 грн |
139+ | 6.17 грн |
382+ | 5.88 грн |
WMT07N03T1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 42.73 грн |
18+ | 15.29 грн |
26+ | 10.4 грн |
100+ | 9.26 грн |
139+ | 7.41 грн |
382+ | 7.05 грн |
2500+ | 6.88 грн |
WMT07N06TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 37.98 грн |
25+ | 14.77 грн |
33+ | 11.32 грн |
96+ | 8.96 грн |
250+ | 8.89 грн |
264+ | 8.45 грн |
WMT07N06TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.58 грн |
15+ | 18.4 грн |
25+ | 13.58 грн |
96+ | 10.76 грн |
250+ | 10.67 грн |
264+ | 10.14 грн |
1000+ | 9.96 грн |
WMT07N10TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
на замовлення 490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 34.03 грн |
24+ | 15.8 грн |
31+ | 11.9 грн |
91+ | 9.48 грн |
249+ | 8.96 грн |
WMT07N10TS |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT223
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 490 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 40.83 грн |
14+ | 19.69 грн |
25+ | 14.28 грн |
91+ | 11.37 грн |
249+ | 10.76 грн |
1000+ | 10.58 грн |
2500+ | 10.23 грн |
WMT1N80D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMT1N80D1 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
WMT4N65D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMT4N65D1B |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
WMU080N10HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 62.51 грн |
10+ | 49.52 грн |
23+ | 38.87 грн |
62+ | 36.74 грн |
WMU080N10HG2 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.02 грн |
10+ | 61.71 грн |
23+ | 46.64 грн |
62+ | 44.09 грн |
2000+ | 42.32 грн |
WMX3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 207 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 82.3 грн |
14+ | 65.4 грн |
37+ | 61.72 грн |
WMX3N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 207 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 117.75 грн |
5+ | 102.55 грн |
14+ | 78.47 грн |
37+ | 74.07 грн |
300+ | 73.18 грн |
900+ | 70.54 грн |
WMX4N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 275 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 99.7 грн |
5+ | 83.77 грн |
13+ | 65.4 грн |
36+ | 61.72 грн |
WMX4N150D1 |
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.65 грн |
5+ | 104.38 грн |
13+ | 78.47 грн |
36+ | 74.07 грн |
900+ | 70.54 грн |
WMZ13N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ13N65EM |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ26N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ26N60C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ26N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ26N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ36N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ36N65C4 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ53N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ53N60F2 |
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WS05-4RUL |
Виробник: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
на замовлення 300 шт:
термін постачання 28-31 дні (днів)WSRSIC002120NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
товар відсутній
WSRSIC002120NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004065NPD |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
товар відсутній
WSRSIC004065NPD |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004065NPF |
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
товар відсутній
WSRSIC004065NPF |
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004065NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
товар відсутній
WSRSIC004065NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004120NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
товар відсутній
WSRSIC004120NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC005120NNI |
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Leakage current: 1µA
Max. forward impulse current: 43A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Leakage current: 1µA
Max. forward impulse current: 43A
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 145.6 грн |
9+ | 96.26 грн |
25+ | 91.11 грн |
WSRSIC005120NNI |
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Leakage current: 1µA
Max. forward impulse current: 43A
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Leakage current: 1µA
Max. forward impulse current: 43A
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 174.72 грн |
9+ | 119.95 грн |
25+ | 109.34 грн |
1000+ | 108.45 грн |
2000+ | 104.93 грн |
WSRSIC005120NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
товар відсутній
WSRSIC005120NPO |
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній