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WMT4N65D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMT4N65D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
WMU080N10HG2 WMU080N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
7+62.13 грн
10+ 49.3 грн
23+ 39.49 грн
62+ 37.39 грн
Мінімальне замовлення: 7
WMU080N10HG2 WMU080N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)
4+74.56 грн
10+ 61.44 грн
23+ 47.39 грн
62+ 44.87 грн
1000+ 43.79 грн
2000+ 43.07 грн
Мінімальне замовлення: 4
WMX3N150D1 WMX3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
5+83.17 грн
14+ 65.94 грн
37+ 62.19 грн
Мінімальне замовлення: 5
WMX3N150D1 WMX3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 203 шт:
термін постачання 14-21 дні (днів)
3+119.1 грн
5+ 103.65 грн
14+ 79.13 грн
37+ 74.63 грн
300+ 72.83 грн
900+ 71.93 грн
Мінімальне замовлення: 3
WMX4N150D1 WMX4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
4+101.68 грн
5+ 85.42 грн
13+ 66.69 грн
36+ 62.94 грн
Мінімальне замовлення: 4
WMX4N150D1 WMX4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 14-21 дні (днів)
3+122.01 грн
5+ 106.45 грн
13+ 80.03 грн
36+ 75.53 грн
900+ 71.93 грн
Мінімальне замовлення: 3
WMZ13N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ13N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ26N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ26N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ26N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ26N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ36N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ36N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ53N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ53N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WS05-4RUL WAYON Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
кількість в упаковці: 10 шт
на замовлення 300 шт:
термін постачання 28-31 дні (днів)
20+32.66 грн
Мінімальне замовлення: 20
WSRSIC002120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
товар відсутній
WSRSIC002120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
товар відсутній
WSRSIC004065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004065NPF WSRSIC004065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Leakage current: 0.8µA
Kind of package: tube
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
5+83.92 грн
10+ 70.43 грн
16+ 55.97 грн
43+ 52.98 грн
50+ 52.9 грн
Мінімальне замовлення: 5
WSRSIC004065NPF WSRSIC004065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Leakage current: 0.8µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)
3+100.71 грн
10+ 87.77 грн
16+ 67.17 грн
43+ 63.57 грн
50+ 63.48 грн
1000+ 63.03 грн
2000+ 61.05 грн
Мінімальне замовлення: 3
WSRSIC004065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
товар відсутній
WSRSIC004065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
товар відсутній
WSRSIC004120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC005120NNI WSRSIC005120NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
3+145.25 грн
9+ 97.41 грн
25+ 92.16 грн
Мінімальне замовлення: 3
WSRSIC005120NNI WSRSIC005120NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
2+174.3 грн
9+ 121.39 грн
25+ 110.6 грн
1000+ 108.8 грн
2000+ 107 грн
Мінімальне замовлення: 2
WSRSIC005120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
товар відсутній
WSRSIC005120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPE WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPE WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC008065NNI WSRSIC008065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
4+132.34 грн
10+ 88.42 грн
28+ 83.17 грн
Мінімальне замовлення: 4
WSRSIC008065NNI WSRSIC008065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)
2+158.81 грн
10+ 110.18 грн
28+ 99.81 грн
1000+ 98.91 грн
2000+ 97.11 грн
Мінімальне замовлення: 2
WSRSIC008065NPC WSRSIC008065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
5+82.31 грн
10+ 68.94 грн
16+ 55.45 грн
44+ 52.45 грн
Мінімальне замовлення: 5
WSRSIC008065NPC WSRSIC008065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)
3+98.77 грн
10+ 85.9 грн
16+ 66.54 грн
44+ 62.94 грн
300+ 61.14 грн
Мінімальне замовлення: 3
WSRSIC008065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
товар відсутній
WSRSIC008065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC008065NPE WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
товар відсутній
WSRSIC008065NPE WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC008065NPF WSRSIC008065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
4+122.66 грн
10+ 102.65 грн
11+ 81.67 грн
30+ 77.18 грн
Мінімальне замовлення: 4
WSRSIC008065NPF WSRSIC008065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)
2+147.19 грн
10+ 127.92 грн
11+ 98.01 грн
30+ 92.61 грн
1000+ 90.82 грн
2000+ 89.02 грн
Мінімальне замовлення: 2
WSRSIC008065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
товар відсутній
WSRSIC008065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC010065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 70A
Max. forward voltage: 1.38V
Leakage current: 1.5µA
товар відсутній
WSRSIC010065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 70A
Max. forward voltage: 1.38V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC010065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.38V
Leakage current: 1.5µA
товар відсутній
WMT4N65D1B
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMT4N65D1B
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
WMU080N10HG2
WMU080N10HG2
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
7+62.13 грн
10+ 49.3 грн
23+ 39.49 грн
62+ 37.39 грн
Мінімальне замовлення: 7
WMU080N10HG2
WMU080N10HG2
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
4+74.56 грн
10+ 61.44 грн
23+ 47.39 грн
62+ 44.87 грн
1000+ 43.79 грн
2000+ 43.07 грн
Мінімальне замовлення: 4
WMX3N150D1
WMX3N150D1
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
на замовлення 203 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+83.17 грн
14+ 65.94 грн
37+ 62.19 грн
Мінімальне замовлення: 5
WMX3N150D1
WMX3N150D1
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 203 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+119.1 грн
5+ 103.65 грн
14+ 79.13 грн
37+ 74.63 грн
300+ 72.83 грн
900+ 71.93 грн
Мінімальне замовлення: 3
WMX4N150D1
WMX4N150D1
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+101.68 грн
5+ 85.42 грн
13+ 66.69 грн
36+ 62.94 грн
Мінімальне замовлення: 4
WMX4N150D1
WMX4N150D1
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 275 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+122.01 грн
5+ 106.45 грн
13+ 80.03 грн
36+ 75.53 грн
900+ 71.93 грн
Мінімальне замовлення: 3
WMZ13N65EM
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ13N65EM
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ26N60C4
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ26N60C4
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ26N65C4
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ26N65C4
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ36N65C4
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ36N65C4
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WMZ53N60F2
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
WMZ53N60F2
Виробник: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
WS05-4RUL
Виробник: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
кількість в упаковці: 10 шт
на замовлення 300 шт:
термін постачання 28-31 дні (днів)
Кількість Ціна без ПДВ
20+32.66 грн
Мінімальне замовлення: 20
WSRSIC002120NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
товар відсутній
WSRSIC002120NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004065NPD
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
товар відсутній
WSRSIC004065NPD
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004065NPF
WSRSIC004065NPF
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Leakage current: 0.8µA
Kind of package: tube
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+83.92 грн
10+ 70.43 грн
16+ 55.97 грн
43+ 52.98 грн
50+ 52.9 грн
Мінімальне замовлення: 5
WSRSIC004065NPF
WSRSIC004065NPF
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Leakage current: 0.8µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 100 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+100.71 грн
10+ 87.77 грн
16+ 67.17 грн
43+ 63.57 грн
50+ 63.48 грн
1000+ 63.03 грн
2000+ 61.05 грн
Мінімальне замовлення: 3
WSRSIC004065NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
товар відсутній
WSRSIC004065NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.38V
Leakage current: 0.8µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC004120NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
товар відсутній
WSRSIC004120NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC005120NNI
WSRSIC005120NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
3+145.25 грн
9+ 97.41 грн
25+ 92.16 грн
Мінімальне замовлення: 3
WSRSIC005120NNI
WSRSIC005120NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+174.3 грн
9+ 121.39 грн
25+ 110.6 грн
1000+ 108.8 грн
2000+ 107 грн
Мінімальне замовлення: 2
WSRSIC005120NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
товар відсутній
WSRSIC005120NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPC
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPC
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPD
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPD
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPE
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPE
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPF
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPF
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220FP-2
Kind of package: tube
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC006065NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
товар відсутній
WSRSIC006065NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 40A
Max. forward voltage: 1.38V
Leakage current: 1µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC008065NNI
WSRSIC008065NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+132.34 грн
10+ 88.42 грн
28+ 83.17 грн
Мінімальне замовлення: 4
WSRSIC008065NNI
WSRSIC008065NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+158.81 грн
10+ 110.18 грн
28+ 99.81 грн
1000+ 98.91 грн
2000+ 97.11 грн
Мінімальне замовлення: 2
WSRSIC008065NPC
WSRSIC008065NPC
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
5+82.31 грн
10+ 68.94 грн
16+ 55.45 грн
44+ 52.45 грн
Мінімальне замовлення: 5
WSRSIC008065NPC
WSRSIC008065NPC
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 50 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
3+98.77 грн
10+ 85.9 грн
16+ 66.54 грн
44+ 62.94 грн
300+ 61.14 грн
Мінімальне замовлення: 3
WSRSIC008065NPD
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
товар відсутній
WSRSIC008065NPD
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN5x6; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN5x6
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC008065NPE
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
товар відсутній
WSRSIC008065NPE
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DFN8x8; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DFN8x8
Kind of package: tape
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC008065NPF
WSRSIC008065NPF
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
4+122.66 грн
10+ 102.65 грн
11+ 81.67 грн
30+ 77.18 грн
Мінімальне замовлення: 4
WSRSIC008065NPF
WSRSIC008065NPF
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
2+147.19 грн
10+ 127.92 грн
11+ 98.01 грн
30+ 92.61 грн
1000+ 90.82 грн
2000+ 89.02 грн
Мінімальне замовлення: 2
WSRSIC008065NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
товар відсутній
WSRSIC008065NPO
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Leakage current: 1.2µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC010065NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 70A
Max. forward voltage: 1.38V
Leakage current: 1.5µA
товар відсутній
WSRSIC010065NNI
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Kind of package: tube
Max. forward impulse current: 70A
Max. forward voltage: 1.38V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
товар відсутній
WSRSIC010065NPC
Виробник: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward impulse current: 75A
Max. forward voltage: 1.38V
Leakage current: 1.5µA
товар відсутній
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