WSRSIC004120NPO WAYON
Виробник: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 4A
Semiconductor structure: single diode
Case: DPAK
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.36V
Leakage current: 1.5µA
кількість в упаковці: 1 шт
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Технічний опис WSRSIC004120NPO WAYON
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape, Type of diode: Schottky rectifying, Technology: SiC, Mounting: SMD, Max. off-state voltage: 1.2kV, Load current: 4A, Semiconductor structure: single diode, Case: DPAK, Kind of package: tape, Max. forward impulse current: 30A, Max. forward voltage: 1.36V, Leakage current: 1.5µA, кількість в упаковці: 1 шт.
Інші пропозиції WSRSIC004120NPO
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| WSRSIC004120NPO | Виробник : WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.36V Leakage current: 1.5µA |
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