Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (37311) > Сторінка 209 з 622

Обрати Сторінку:   [  << Попередня Сторінка ]  1 62 124 186 204 205 206 207 208 209 210 211 212 213 214 248 310 372 434 496 558 620 622  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
BYT56B-TAP BYT56B-TAP Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 100V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
BYT56D-TAP BYT56D-TAP Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYT56G-TAP BYT56G-TAP Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 400V 3A SOD64
товар відсутній
BYT56J-TAP BYT56J-TAP Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 600V 3A SOD64
товар відсутній
BYT56K-TAP BYT56K-TAP Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BYT56M-TAP BYT56M-TAP Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BYT62-TAP BYT62-TAP Vishay General Semiconductor - Diodes Division byt62.pdf Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+37 грн
10000+ 33.98 грн
Мінімальне замовлення: 5000
BYT78-TAP BYT78-TAP Vishay General Semiconductor - Diodes Division byt77.pdf Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+32.93 грн
5000+ 30.2 грн
12500+ 28.8 грн
Мінімальне замовлення: 2500
BYV12-TAP BYV12-TAP Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 100V 1.5A SOD57
товар відсутній
BYV13-TAP BYV13-TAP Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 400V 1.5A SOD57
товар відсутній
BYV14-TAP BYV14-TAP Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 600V 1.5A SOD57
товар відсутній
BYV15-TAP BYV15-TAP Vishay General Semiconductor - Diodes Division byv12.pdf Description: DIODE AVALANCHE 800V 1.5A SOD57
товар відсутній
BYV26A-TAP BYV26A-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
5000+13.88 грн
Мінімальне замовлення: 5000
BYV26B-TAP BYV26B-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
5000+14.41 грн
Мінімальне замовлення: 5000
BYV26D-TAP BYV26D-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+15.26 грн
Мінімальне замовлення: 5000
BYV27-050-TAP BYV27-050-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 55V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
товар відсутній
BYV27-150-TAP BYV27-150-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+17.08 грн
Мінімальне замовлення: 5000
BYV27-600-TAP BYV27-600-TAP Vishay General Semiconductor - Diodes Division byv27600.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+20.37 грн
10000+ 18.17 грн
Мінімальне замовлення: 5000
BYV28-050-TAP BYV28-050-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товар відсутній
BYV28-100-TAP BYV28-100-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+37.67 грн
5000+ 34.55 грн
Мінімальне замовлення: 2500
BYV28-150-TAP BYV28-150-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+38.46 грн
5000+ 35.27 грн
Мінімальне замовлення: 2500
BYV37-TAP BYV37-TAP Vishay General Semiconductor - Diodes Division byv37.pdf Description: DIODE AVALANCHE 800V 2A SOD57
товар відсутній
BYV38-TAP BYV38-TAP Vishay General Semiconductor - Diodes Division byv37.pdf Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+15.94 грн
10000+ 14.21 грн
Мінімальне замовлення: 5000
BYV98-100-TAP BYV98-100-TAP Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
BYV98-150-TAP BYV98-150-TAP Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
BYV98-200-TAP BYV98-200-TAP Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BYV98-50-TAP BYV98-50-TAP Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BYW172D-TAP BYW172D-TAP Vishay General Semiconductor - Diodes Division byw172d.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
BYW172F-TAP BYW172F-TAP Vishay General Semiconductor - Diodes Division byw172d.pdf Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
BYW172G-TAP BYW172G-TAP Vishay General Semiconductor - Diodes Division byw172d.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
BYW178-TAP BYW178-TAP Vishay General Semiconductor - Diodes Division byw178.pdf Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
BYW32-TAP BYW32-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYW33-TAP BYW33-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 300V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
BYW34-TAP BYW34-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
BYW35-TAP BYW35-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 500V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW36-TAP BYW36-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BYW52-TAP BYW52-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 200V 2A SOD57
товар відсутній
BYW54-TAP BYW54-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+13.88 грн
Мінімальне замовлення: 5000
BYW55-TAP BYW55-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+14.41 грн
Мінімальне замовлення: 5000
BYW56-TAP BYW56-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+14.94 грн
Мінімальне замовлення: 5000
BYW75TAP BYW75TAP Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW76TAP BYW76TAP Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+32.96 грн
5000+ 30.23 грн
Мінімальне замовлення: 2500
BYX85TAP BYX85TAP Vishay General Semiconductor - Diodes Division byx82.pdf Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
BYX86TAP BYX86TAP Vishay General Semiconductor - Diodes Division byx82.pdf Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
BZT03C100-TAP BZT03C100-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 82VWM 139VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZT03C10-TAP BZT03C10-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 8.2VWM 14.8VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
товар відсутній
BZT03C11-TAP BZT03C11-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 9.1VWM 15.7VC SOD57
товар відсутній
BZT03C120-TAP BZT03C120-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 100VWM 167VC SOD57
товар відсутній
BZT03C12-TAP BZT03C12-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 10VWM 17VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
товар відсутній
BZT03C130-TAP BZT03C130-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 110VWM 185VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.54%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
BZT03C150-TAP BZT03C150-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 120VWM 204VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+14.23 грн
Мінімальне замовлення: 5000
BZT03C15-TAP BZT03C15-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 12VWM 20.9VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+17.29 грн
10000+ 15.42 грн
Мінімальне замовлення: 5000
BZT03C160-TAP BZT03C160-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 130VWM 224VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.63%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
товар відсутній
BZT03C16-TAP BZT03C16-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 13VWM 22.9VC SOD57
товар відсутній
BZT03C180-TAP BZT03C180-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 150VWM 249VC SOD57
Tolerance: ±6.39%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
товар відсутній
BZT03C18-TAP BZT03C18-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 15VWM 25.6VC SOD57
Tolerance: ±6.39%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
товар відсутній
BZT03C200-TAP BZT03C200-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 160VWM 276VC SOD57
Tolerance: ±6%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+15.59 грн
10000+ 13.9 грн
Мінімальне замовлення: 5000
BZT03C20-TAP BZT03C20-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 16VWM 28.4VC SOD57
Tolerance: ±6%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
товар відсутній
BZT03C220-TAP BZT03C220-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 180VWM 305VC SOD57
Tolerance: ±5.68%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
товар відсутній
BZT03C22-TAP BZT03C22-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 18VWM 31VC SOD57
Tolerance: ±5.68%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
товар відсутній
BYT56B-TAP byt56a.pdf
BYT56B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
BYT56D-TAP byt56a.pdf
BYT56D-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYT56G-TAP byt56a.pdf
BYT56G-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
товар відсутній
BYT56J-TAP byt56a.pdf
BYT56J-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
товар відсутній
BYT56K-TAP byt56a.pdf
BYT56K-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
BYT56M-TAP byt56a.pdf
BYT56M-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BYT62-TAP byt62.pdf
BYT62-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+37 грн
10000+ 33.98 грн
Мінімальне замовлення: 5000
BYT78-TAP byt77.pdf
BYT78-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+32.93 грн
5000+ 30.2 грн
12500+ 28.8 грн
Мінімальне замовлення: 2500
BYV12-TAP byv12.pdf
BYV12-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 1.5A SOD57
товар відсутній
BYV13-TAP byv12.pdf
BYV13-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1.5A SOD57
товар відсутній
BYV14-TAP byv12.pdf
BYV14-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.5A SOD57
товар відсутній
BYV15-TAP byv12.pdf
BYV15-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.5A SOD57
товар відсутній
BYV26A-TAP byv26.pdf
BYV26A-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+13.88 грн
Мінімальне замовлення: 5000
BYV26B-TAP byv26.pdf
BYV26B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+14.41 грн
Мінімальне замовлення: 5000
BYV26D-TAP byv26.pdf
BYV26D-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+15.26 грн
Мінімальне замовлення: 5000
BYV27-050-TAP byv27.pdf
BYV27-050-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 55V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 55 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 55 V
товар відсутній
BYV27-150-TAP byv27.pdf
BYV27-150-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+17.08 грн
Мінімальне замовлення: 5000
BYV27-600-TAP byv27600.pdf
BYV27-600-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+20.37 грн
10000+ 18.17 грн
Мінімальне замовлення: 5000
BYV28-050-TAP byv2850.pdf
BYV28-050-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
товар відсутній
BYV28-100-TAP byv2850.pdf
BYV28-100-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+37.67 грн
5000+ 34.55 грн
Мінімальне замовлення: 2500
BYV28-150-TAP byv2850.pdf
BYV28-150-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+38.46 грн
5000+ 35.27 грн
Мінімальне замовлення: 2500
BYV37-TAP byv37.pdf
BYV37-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
товар відсутній
BYV38-TAP byv37.pdf
BYV38-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+15.94 грн
10000+ 14.21 грн
Мінімальне замовлення: 5000
BYV98-100-TAP byv98.pdf
BYV98-100-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
BYV98-150-TAP byv98.pdf
BYV98-150-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
BYV98-200-TAP byv98.pdf
BYV98-200-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
BYV98-50-TAP byv98.pdf
BYV98-50-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 4A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
BYW172D-TAP byw172d.pdf
BYW172D-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
BYW172F-TAP byw172d.pdf
BYW172F-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
товар відсутній
BYW172G-TAP byw172d.pdf
BYW172G-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
BYW178-TAP byw178.pdf
BYW178-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
BYW32-TAP byw32.pdf
BYW32-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
BYW33-TAP byw32.pdf
BYW33-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 300V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
BYW34-TAP byw32.pdf
BYW34-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
BYW35-TAP byw32.pdf
BYW35-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 500V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW36-TAP byw32.pdf
BYW36-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
BYW52-TAP byw52.pdf
BYW52-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
товар відсутній
BYW54-TAP byw52.pdf
BYW54-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+13.88 грн
Мінімальне замовлення: 5000
BYW55-TAP byw52.pdf
BYW55-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+14.41 грн
Мінімальне замовлення: 5000
BYW56-TAP byw52.pdf
BYW56-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+14.94 грн
Мінімальне замовлення: 5000
BYW75TAP byw72.pdf
BYW75TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 500V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
BYW76TAP byw72.pdf
BYW76TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+32.96 грн
5000+ 30.23 грн
Мінімальне замовлення: 2500
BYX85TAP byx82.pdf
BYX85TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
BYX86TAP byx82.pdf
BYX86TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
BZT03C100-TAP bzt03.pdf
BZT03C100-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 82VWM 139VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товар відсутній
BZT03C10-TAP bzt03.pdf
BZT03C10-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.2VWM 14.8VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.5 V
товар відсутній
BZT03C11-TAP bzt03.pdf
BZT03C11-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.1VWM 15.7VC SOD57
товар відсутній
BZT03C120-TAP bzt03.pdf
BZT03C120-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 167VC SOD57
товар відсутній
BZT03C12-TAP bzt03.pdf
BZT03C12-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
товар відсутній
BZT03C130-TAP bzt03.pdf
BZT03C130-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 110VWM 185VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6.54%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
товар відсутній
BZT03C150-TAP bzt03.pdf
BZT03C150-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 120VWM 204VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+14.23 грн
Мінімальне замовлення: 5000
BZT03C15-TAP bzt03.pdf
BZT03C15-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 20.9VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+17.29 грн
10000+ 15.42 грн
Мінімальне замовлення: 5000
BZT03C160-TAP bzt03.pdf
BZT03C160-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 130VWM 224VC SOD57
Packaging: Tape & Box (TB)
Tolerance: ±5.63%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 120 V
товар відсутній
BZT03C16-TAP bzt03.pdf
BZT03C16-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 22.9VC SOD57
товар відсутній
BZT03C180-TAP bzt03.pdf
BZT03C180-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 249VC SOD57
Tolerance: ±6.39%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
товар відсутній
BZT03C18-TAP bzt03.pdf
BZT03C18-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 25.6VC SOD57
Tolerance: ±6.39%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
товар відсутній
BZT03C200-TAP bzt03.pdf
BZT03C200-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 276VC SOD57
Tolerance: ±6%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+15.59 грн
10000+ 13.9 грн
Мінімальне замовлення: 5000
BZT03C20-TAP bzt03.pdf
BZT03C20-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 28.4VC SOD57
Tolerance: ±6%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 15 V
товар відсутній
BZT03C220-TAP bzt03.pdf
BZT03C220-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 180VWM 305VC SOD57
Tolerance: ±5.68%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 220 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 160 V
товар відсутній
BZT03C22-TAP bzt03.pdf
BZT03C22-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 31VC SOD57
Tolerance: ±5.68%
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 16 V
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 62 124 186 204 205 206 207 208 209 210 211 212 213 214 248 310 372 434 496 558 620 622  [ Наступна Сторінка >> ]