Продукція > TEXAS INSTRUMENTS > Всі товари виробника TEXAS INSTRUMENTS (590017) > Сторінка 4885 з 9834
Фото | Назва | Виробник | Інформація |
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LM50CIM3X/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: temperature sensor; -40÷125°C; SOT23; SMD; Accur: ±4°C; 4.5÷10V Type of integrated circuit: temperature sensor Case: SOT23 Supply voltage: 4.5...10V Mounting: SMD Kind of package: reel; tape Temperature measurement accuracy: ±4°C Temperature measuring range: -40...125°C кількість в упаковці: 1 шт |
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LM50QIM3X/NOPB | TEXAS INSTRUMENTS |
Category: Temperature transducers Description: IC: temperature sensor; -40÷125°C; SOT23-3; SMD; Interface: analog Type of integrated circuit: temperature sensor Case: SOT23-3 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...10V Interface: analog Temperature measuring range: -40...125°C Temperature measurement accuracy: ±3°C кількість в упаковці: 1000 шт |
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LM5100AMX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -3÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -3...3A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5100ASD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -3...3A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5100BMA/NOPB | TEXAS INSTRUMENTS |
![]() ![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 570ns Pulse fall time: 430ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 64 шт: термін постачання 14-21 дні (днів) |
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LM5100BMAX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -2...2A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 570ns Pulse fall time: 430ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5101AM/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; MOSFET half-bridge; SO8; -3÷3A; Ch: 2; 9÷14VDC; 100V Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -3...3A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 430ns Pulse fall time: 260ns Kind of package: tube Voltage class: 100V Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 63 шт: термін постачання 14-21 дні (днів) |
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LM5101AMRX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8-EP Output current: -3...3A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5101AMX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -3÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -3...3A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5101ASD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -3...3A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5101ASDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -3...3A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 430ns Pulse fall time: 260ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
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LM5101BMA/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Supply voltage: 9...14V DC Case: SO8 Output current: -2...2A Operating temperature: -40...125°C Mounting: SMD Number of channels: 2 Impulse rise time: 570ns Pulse fall time: 430ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 95 шт: термін постачання 14-21 дні (днів) |
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LM5101BMAX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Supply voltage: 9...14V DC Case: SO8 Output current: -2...2A Operating temperature: -40...125°C Mounting: SMD Number of channels: 2 Impulse rise time: 570ns Pulse fall time: 430ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5101BSDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -2÷2A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Supply voltage: 9...14V DC Case: WSON10 Output current: -2...2A Operating temperature: -40...125°C Mounting: SMD Number of channels: 2 Impulse rise time: 570ns Pulse fall time: 430ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
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LM5101CMY/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; HVSSOP8; -1÷1A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: HVSSOP8 Output current: -1...1A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 990ns Pulse fall time: 715ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5101CMYX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; HVSSOP8; -1÷1A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: HVSSOP8 Output current: -1...1A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 990ns Pulse fall time: 715ns Protection: undervoltage UVP кількість в упаковці: 3500 шт |
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LM5101CSD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1÷1A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1...1A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 990ns Pulse fall time: 715ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5101M/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; MOSFET half-bridge; SO8; -1.8÷1.6A; Ch: 2; 9÷14VDC; 100V Mounting: SMD Case: SO8 Operating temperature: -40...125°C Kind of package: tube Output current: -1.8...1.6A Type of integrated circuit: driver Impulse rise time: 600ns Pulse fall time: 600ns Number of channels: 2 Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Topology: MOSFET half-bridge Voltage class: 100V Supply voltage: 9...14V DC кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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LM5102MM/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: VSSOP10 Output current: -1.8...1.6A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 600ns Pulse fall time: 600ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5102MMX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: VSSOP10 Output current: -1.8...1.6A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 600ns Pulse fall time: 600ns Protection: undervoltage UVP кількість в упаковці: 3500 шт |
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LM5102SDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.8...1.6A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 600ns Pulse fall time: 600ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
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LM5104M/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.8÷1.6A Mounting: SMD Operating temperature: -40...125°C Output current: -1.8...1.6A Type of integrated circuit: driver Impulse rise time: 600ns Pulse fall time: 600ns Number of channels: 2 Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Supply voltage: 9...14V DC кількість в упаковці: 1 шт |
на замовлення 516 шт: термін постачання 14-21 дні (днів) |
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LM5104MX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.8÷1.6A Mounting: SMD Operating temperature: -40...125°C Output current: -1.8...1.6A Type of integrated circuit: driver Impulse rise time: 600ns Pulse fall time: 600ns Number of channels: 2 Protection: undervoltage UVP Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Supply voltage: 9...14V DC кількість в упаковці: 2500 шт |
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LM5104SD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.8...1.6A Number of channels: 2 Supply voltage: 9...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 600ns Pulse fall time: 600ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5105SD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.6÷1.8A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.6...1.8A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5105SDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.6÷1.8A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.6...1.8A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
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LM5106MM/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: VSSOP10 Output current: -1.8...1.2A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 864 шт: термін постачання 14-21 дні (днів) |
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LM5106MMX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: VSSOP10 Output current: -1.8...1.2A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Protection: undervoltage UVP кількість в упаковці: 3500 шт |
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LM5106SD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.8...1.2A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5106SDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.8...1.2A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
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LM5107MA/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.4÷1.3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -1.4...1.3A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 279 шт: термін постачання 14-21 дні (днів) |
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LM5107MAX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.4÷1.3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -1.4...1.3A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5107SD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1.4÷1.3A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1.4...1.3A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5108DRCR | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; VSON10; -2.6÷1.6A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: VSON10 Output current: -2.6...1.6A Number of channels: 2 Supply voltage: 5.5...16V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 11ns Pulse fall time: 8ns Voltage class: 100V Protection: undervoltage UVP кількість в упаковці: 3000 шт |
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LM5108DRCT | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; VSON10; -2.6÷1.6A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: VSON10 Output current: -2.6...1.6A Number of channels: 2 Supply voltage: 5.5...16V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 11ns Pulse fall time: 8ns Voltage class: 100V Protection: undervoltage UVP кількість в упаковці: 1 шт |
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LM5109AMAX/NOPB | TEXAS INSTRUMENTS |
![]() ![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5109ASD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5109ASDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
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LM5109BMA/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 891 шт: термін постачання 14-21 дні (днів) |
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LM5109BMAX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
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LM5109BQNGTRQ1 | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
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LM5109BQNGTTQ1 | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5109BSD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
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LM5109BSDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
товар відсутній |
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LM5109MA/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 49 шт: термін постачання 14-21 дні (днів) |
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LM5110-1M/NOPB | TEXAS INSTRUMENTS |
![]() ![]() Description: IC: driver; MOSFET half-bridge; low-side,MOSFET gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Kind of package: tube Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 283 шт: термін постачання 14-21 дні (днів) |
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LM5110-1MX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
товар відсутній |
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LM5110-1SD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: WSON10 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
товар відсутній |
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LM5110-1SDX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: WSON10 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
товар відсутній |
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LM5110-2M/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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LM5110-2SD/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: WSON10 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
товар відсутній |
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LM5110-3M/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Case: SO8 Mounting: SMD Protection: undervoltage UVP Type of integrated circuit: driver Impulse rise time: 25ns Pulse fall time: 25ns Number of channels: 2 Kind of integrated circuit: low-side; MOSFET gate driver Output current: -5...3A Operating temperature: -40...125°C Supply voltage: 3.5...14V DC кількість в упаковці: 1 шт |
на замовлення 61 шт: термін постачання 14-21 дні (днів) |
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LM5110-3MX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
товар відсутній |
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LM5111-1M/NOPB | TEXAS INSTRUMENTS |
![]() ![]() Description: IC: driver; MOSFET half-bridge; low-side,MOSFET gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Kind of package: tube Kind of output: non-inverting Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 91 шт: термін постачання 14-21 дні (днів) |
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LM5111-1MX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
товар відсутній |
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LM5111-1MY/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; HVSSOP8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: HVSSOP8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 1000 шт |
товар відсутній |
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LM5111-1MYX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; HVSSOP8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: HVSSOP8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 3500 шт |
товар відсутній |
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LM5111-2M/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 242 шт: термін постачання 14-21 дні (днів) |
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LM5111-2MX/NOPB | TEXAS INSTRUMENTS |
![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 2500 шт |
товар відсутній |
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LM5111-4M/NOPB | TEXAS INSTRUMENTS |
![]() ![]() Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Output current: -5...3A Number of channels: 2 Supply voltage: 3.5...14V DC Mounting: SMD Impulse rise time: 25ns Pulse fall time: 25ns Protection: undervoltage UVP кількість в упаковці: 1 шт |
на замовлення 59 шт: термін постачання 14-21 дні (днів) |
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LM50CIM3X/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; SOT23; SMD; Accur: ±4°C; 4.5÷10V
Type of integrated circuit: temperature sensor
Case: SOT23
Supply voltage: 4.5...10V
Mounting: SMD
Kind of package: reel; tape
Temperature measurement accuracy: ±4°C
Temperature measuring range: -40...125°C
кількість в упаковці: 1 шт
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; SOT23; SMD; Accur: ±4°C; 4.5÷10V
Type of integrated circuit: temperature sensor
Case: SOT23
Supply voltage: 4.5...10V
Mounting: SMD
Kind of package: reel; tape
Temperature measurement accuracy: ±4°C
Temperature measuring range: -40...125°C
кількість в упаковці: 1 шт
товар відсутній
LM50QIM3X/NOPB |
Виробник: TEXAS INSTRUMENTS
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; SOT23-3; SMD; Interface: analog
Type of integrated circuit: temperature sensor
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...10V
Interface: analog
Temperature measuring range: -40...125°C
Temperature measurement accuracy: ±3°C
кількість в упаковці: 1000 шт
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; SOT23-3; SMD; Interface: analog
Type of integrated circuit: temperature sensor
Case: SOT23-3
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...10V
Interface: analog
Temperature measuring range: -40...125°C
Temperature measurement accuracy: ±3°C
кількість в упаковці: 1000 шт
товар відсутній
LM5100AMX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -3÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -3÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5100ASD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5100BMA/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 64 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 301.15 грн |
3+ | 261.44 грн |
6+ | 194.26 грн |
15+ | 183.81 грн |
95+ | 175.1 грн |
LM5100BMAX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5101AM/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -3÷3A; Ch: 2; 9÷14VDC; 100V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Kind of package: tube
Voltage class: 100V
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -3÷3A; Ch: 2; 9÷14VDC; 100V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Kind of package: tube
Voltage class: 100V
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 63 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 373.38 грн |
5+ | 247.87 грн |
12+ | 225.63 грн |
95+ | 216.91 грн |
LM5101AMRX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8-EP
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8-EP; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8-EP
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5101AMX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -3÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -3÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5101ASD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5101ASDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -3÷3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -3...3A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 430ns
Pulse fall time: 260ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5101BMA/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 9...14V DC
Case: SO8
Output current: -2...2A
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 9...14V DC
Case: SO8
Output current: -2...2A
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 95 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 345.24 грн |
3+ | 299.44 грн |
5+ | 236.08 грн |
12+ | 223.01 грн |
95+ | 214.3 грн |
LM5101BMAX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 9...14V DC
Case: SO8
Output current: -2...2A
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -2÷2A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 9...14V DC
Case: SO8
Output current: -2...2A
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5101BSDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 9...14V DC
Case: WSON10
Output current: -2...2A
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 9...14V DC
Case: WSON10
Output current: -2...2A
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 2
Impulse rise time: 570ns
Pulse fall time: 430ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5101CMY/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; HVSSOP8; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -1...1A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 715ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; HVSSOP8; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -1...1A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 715ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5101CMYX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; HVSSOP8; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -1...1A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 715ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; HVSSOP8; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -1...1A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 715ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
товар відсутній
LM5101CSD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1...1A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 715ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1...1A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 990ns
Pulse fall time: 715ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5101M/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1.8÷1.6A; Ch: 2; 9÷14VDC; 100V
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1.8...1.6A
Type of integrated circuit: driver
Impulse rise time: 600ns
Pulse fall time: 600ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 100V
Supply voltage: 9...14V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1.8÷1.6A; Ch: 2; 9÷14VDC; 100V
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Output current: -1.8...1.6A
Type of integrated circuit: driver
Impulse rise time: 600ns
Pulse fall time: 600ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 100V
Supply voltage: 9...14V DC
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 394.96 грн |
4+ | 297.63 грн |
10+ | 270.92 грн |
95+ | 261.34 грн |
LM5102MM/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5102MMX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
товар відсутній
LM5102SDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5104M/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.8÷1.6A
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.8...1.6A
Type of integrated circuit: driver
Impulse rise time: 600ns
Pulse fall time: 600ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Supply voltage: 9...14V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.8÷1.6A
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.8...1.6A
Type of integrated circuit: driver
Impulse rise time: 600ns
Pulse fall time: 600ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Supply voltage: 9...14V DC
кількість в упаковці: 1 шт
на замовлення 516 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 313.34 грн |
3+ | 272.3 грн |
5+ | 210.82 грн |
14+ | 199.49 грн |
25+ | 198.62 грн |
95+ | 194.26 грн |
LM5104MX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.8÷1.6A
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.8...1.6A
Type of integrated circuit: driver
Impulse rise time: 600ns
Pulse fall time: 600ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Supply voltage: 9...14V DC
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.8÷1.6A
Mounting: SMD
Operating temperature: -40...125°C
Output current: -1.8...1.6A
Type of integrated circuit: driver
Impulse rise time: 600ns
Pulse fall time: 600ns
Number of channels: 2
Protection: undervoltage UVP
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Supply voltage: 9...14V DC
кількість в упаковці: 2500 шт
товар відсутній
LM5104SD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.6A
Number of channels: 2
Supply voltage: 9...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 600ns
Pulse fall time: 600ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5105SD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.6÷1.8A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.6...1.8A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.6÷1.8A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.6...1.8A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5105SDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.6÷1.8A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.6...1.8A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.6÷1.8A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.6...1.8A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5106MM/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 864 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 155.73 грн |
5+ | 137.51 грн |
10+ | 106.28 грн |
25+ | 105.41 грн |
27+ | 100.18 грн |
250+ | 95.83 грн |
LM5106MMX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSSOP10; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSSOP10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
товар відсутній
LM5106SD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5106SDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON10
Output current: -1.8...1.2A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 10ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5107MA/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.4÷1.3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1.4...1.3A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.4÷1.3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1.4...1.3A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 279 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 246.73 грн |
3+ | 216.21 грн |
7+ | 162.9 грн |
18+ | 154.19 грн |
95+ | 148.09 грн |
LM5107MAX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.4÷1.3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1.4...1.3A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1.4÷1.3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1.4...1.3A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5107SD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1.4÷1.3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1.4...1.3A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1.4÷1.3A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1.4...1.3A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5108DRCR |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSON10; -2.6÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSON10
Output current: -2.6...1.6A
Number of channels: 2
Supply voltage: 5.5...16V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 11ns
Pulse fall time: 8ns
Voltage class: 100V
Protection: undervoltage UVP
кількість в упаковці: 3000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSON10; -2.6÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSON10
Output current: -2.6...1.6A
Number of channels: 2
Supply voltage: 5.5...16V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 11ns
Pulse fall time: 8ns
Voltage class: 100V
Protection: undervoltage UVP
кількість в упаковці: 3000 шт
товар відсутній
LM5108DRCT |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSON10; -2.6÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSON10
Output current: -2.6...1.6A
Number of channels: 2
Supply voltage: 5.5...16V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 11ns
Pulse fall time: 8ns
Voltage class: 100V
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; VSON10; -2.6÷1.6A
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: VSON10
Output current: -2.6...1.6A
Number of channels: 2
Supply voltage: 5.5...16V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 11ns
Pulse fall time: 8ns
Voltage class: 100V
Protection: undervoltage UVP
кількість в упаковці: 1 шт
товар відсутній
LM5109AMAX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5109ASD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5109ASDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5109BMA/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 891 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 99.51 грн |
10+ | 83.63 грн |
14+ | 73.18 грн |
39+ | 68.82 грн |
LM5109BMAX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5109BQNGTRQ1 |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5109BQNGTTQ1 |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5109BSD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5109BSDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: WSON8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5109MA/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; -1÷1A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Output current: -1...1A
Number of channels: 2
Supply voltage: 8...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 15ns
Pulse fall time: 15ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 49 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 161.36 грн |
3+ | 140.22 грн |
10+ | 108.02 грн |
26+ | 101.92 грн |
95+ | 100.18 грн |
LM5110-1M/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: tube
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: tube
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 283 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 253.3 грн |
5+ | 226.16 грн |
7+ | 160.29 грн |
18+ | 151.58 грн |
95+ | 147.22 грн |
LM5110-1MX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5110-1SD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: WSON10
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: WSON10
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5110-1SDX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: WSON10
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: WSON10
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 4500 шт
товар відсутній
LM5110-2M/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 15 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 149.17 грн |
3+ | 129.36 грн |
10+ | 110.63 грн |
11+ | 90.6 грн |
31+ | 86.24 грн |
LM5110-2SD/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: WSON10
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; WSON10; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: WSON10
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5110-3M/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Case: SO8
Mounting: SMD
Protection: undervoltage UVP
Type of integrated circuit: driver
Impulse rise time: 25ns
Pulse fall time: 25ns
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...3A
Operating temperature: -40...125°C
Supply voltage: 3.5...14V DC
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Case: SO8
Mounting: SMD
Protection: undervoltage UVP
Type of integrated circuit: driver
Impulse rise time: 25ns
Pulse fall time: 25ns
Number of channels: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Output current: -5...3A
Operating temperature: -40...125°C
Supply voltage: 3.5...14V DC
кількість в упаковці: 1 шт
на замовлення 61 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 113.99 грн |
10+ | 101.92 грн |
13+ | 84.5 грн |
34+ | 80.14 грн |
95+ | 76.66 грн |
LM5110-3MX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5111-1M/NOPB | ![]() |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 91 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 242.98 грн |
5+ | 216.21 грн |
7+ | 160.29 грн |
18+ | 151.58 грн |
95+ | 146.35 грн |
LM5111-1MX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5111-1MY/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; HVSSOP8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; HVSSOP8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
LM5111-1MYX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; HVSSOP8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; HVSSOP8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: HVSSOP8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 3500 шт
товар відсутній
LM5111-2M/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 242 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 222.34 грн |
3+ | 201.74 грн |
7+ | 147.22 грн |
19+ | 139.38 грн |
95+ | 134.16 грн |
LM5111-2MX/NOPB |
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Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 2500 шт
товар відсутній
LM5111-4M/NOPB |
![]() ![]() |
Виробник: TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -5÷3A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Output current: -5...3A
Number of channels: 2
Supply voltage: 3.5...14V DC
Mounting: SMD
Impulse rise time: 25ns
Pulse fall time: 25ns
Protection: undervoltage UVP
кількість в упаковці: 1 шт
на замовлення 59 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 153.86 грн |
3+ | 132.98 грн |
10+ | 100.18 грн |
28+ | 94.08 грн |