LM5106SDX/NOPB Texas Instruments
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 52.69 грн |
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Технічний опис LM5106SDX/NOPB Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 10WSON, Packaging: Tape & Reel (TR), Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 8V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 118 V, Supplier Device Package: 10-WSON (4x4), Rise / Fall Time (Typ): 15ns, 10ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.2V, Current - Peak Output (Source, Sink): 1.2A, 1.8A, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції LM5106SDX/NOPB
| Фото | Назва | Виробник | Інформація |
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LM5106SDX/NOPB | Виробник : Texas Instruments |
 Driver 1.8A 2-OUT High and Low Side Half Brdg 10-Pin WSON EP T/R |
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LM5106SDX/NOPB | Виробник : Texas Instruments |
Driver 1.8A 2-OUT High and Low Side Half Brdg 10-Pin WSON EP T/R |
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| LM5106SDX/NOPB | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.8...1.2A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Protection: undervoltage UVP кількість в упаковці: 4500 шт |
товар відсутній |
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LM5106SDX/NOPB | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 10WSON Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 15ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 1.2A, 1.8A Part Status: Active DigiKey Programmable: Not Verified |
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LM5106SDX/NOPB | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 10WSON Packaging: Cut Tape (CT) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 15ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 1.2A, 1.8A Part Status: Active DigiKey Programmable: Not Verified |
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LM5106SDX/NOPB | Виробник : Texas Instruments |
Gate Drivers 1.2-A, 1.8-A 100-V half bridge gate driver with 8V-UVLO and programmable dead-time 10-WSON -40 to 125 |
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| LM5106SDX/NOPB | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.2A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON10 Output current: -1.8...1.2A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 10ns Protection: undervoltage UVP |
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