Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23659) > Сторінка 46 з 395

Обрати Сторінку:   [  << Попередня Сторінка ]  1 39 41 42 43 44 45 46 47 48 49 50 51 78 117 156 195 234 273 312 351 390 395  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
BZD27C22PHMHG BZD27C22PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 22.05V 1W SUB SMA
товар відсутній
BZD27C27PHM2G BZD27C27PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 27V 1W SUB SMA
Tolerance: ±7.03%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
товар відсутній
BZD27C27PHMHG BZD27C27PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 27V 1W SUB SMA
Tolerance: ±7.03%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
товар відсутній
BZD27C30PHM2G BZD27C30PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 30V 1W SUB SMA
товар відсутній
BZD27C30PHMHG BZD27C30PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 30V 1W SUB SMA
товар відсутній
BZD27C68P M2G BZD27C68P M2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 68V 1W SUB SMA
товар відсутній
BZD27C6V8P M2G BZD27C6V8P M2G Taiwan Semiconductor Corporation BZD27C6V8P_BZD27C220P_Jun2017.pdf Description: DIODE ZENER 6.8V 1W SUB SMA
товар відсутній
ES1B M2G ES1B M2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 100V 1A DO214AC
товар відсутній
ES1BHM2G ES1BHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 100V 1A DO214AC
товар відсутній
ES1BL M2G ES1BL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
ES1BL MHG ES1BL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 100V 1A SUB SMA
товар відсутній
ES1D M2G ES1D M2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES1DHM2G ES1DHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES1DL M2G ES1DL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
ES1DV M2G ES1DV M2G Taiwan Semiconductor Corporation ES1DV_C2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES1G M2G ES1G M2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
ES1GHM2G ES1GHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_M15.pdf Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
ES1GL M2G ES1GL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
ES1GL MHG ES1GL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
ES1J M2G ES1J M2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
ES1JHM2G ES1JHM2G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
ES1JL M2G ES1JL M2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
товар відсутній
ES1JL MHG ES1JL MHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
ES1JLHM2G ES1JLHM2G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
ES1JLHMHG ES1JLHMHG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ES2B M4G ES2B M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES2BA M2G ES2BA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES2BAHM2G ES2BAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
ES2BHM4G ES2BHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
ES2C M4G ES2C M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
ES2CA M2G ES2CA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
ES2CAHM2G ES2CAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES2CHM4G ES2CHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES2D M4G ES2D M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2DA M2G ES2DA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 200V 2A DO214AC
товар відсутній
ES2DAHM2G ES2DAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 200V 2A DO214AC
товар відсутній
ES2DHM4G ES2DHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2DV M4G ES2DV M4G Taiwan Semiconductor Corporation ES2DV_C2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2DVHM4G ES2DVHM4G Taiwan Semiconductor Corporation ES2DV_C2102.pdf Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2F M4G ES2F M4G Taiwan Semiconductor Corporation ES2A%20SERIES_K1701.pdf Description: DIODE GEN PURP 300V 2A DO214AA
товар відсутній
ES2FA M2G ES2FA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_L15.pdf Description: DIODE GEN PURP 300V 2A DO214AC
товар відсутній
ES2FAHM2G ES2FAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_L15.pdf Description: DIODE GEN PURP 300V 2A DO214AC
товар відсутній
ES2FHM4G ES2FHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_K1701.pdf Description: DIODE GEN PURP 300V 2A DO214AA
товар відсутній
ES2G M4G ES2G M4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 2A DO214AA
товар відсутній
ES2GA M2G ES2GA M2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 400V 2A DO214AC
товар відсутній
ES2GAHM2G ES2GAHM2G Taiwan Semiconductor Corporation ES2AA%20SERIES_M2102.pdf Description: DIODE GEN PURP 400V 2A DO214AC
товар відсутній
ES2GHM4G ES2GHM4G Taiwan Semiconductor Corporation ES2A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 2A DO214AA
товар відсутній
ES3DB M4G ES3DB M4G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE GEN PURP 200V 3A DO214AA
товар відсутній
ES3DBHM4G ES3DBHM4G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
ES3FB M4G ES3FB M4G Taiwan Semiconductor Corporation ES3AB%20SERIES_B1706.pdf Description: DIODE GEN PURP 300V 3A DO214AA
товар відсутній
ES3FBHM4G ES3FBHM4G Taiwan Semiconductor Corporation ES3AB%20SERIES_B1706.pdf Description: DIODE GEN PURP 300V 3A DO214AA
товар відсутній
ES3GB M4G ES3GB M4G Taiwan Semiconductor Corporation ES3AB%20SERIES_B1706.pdf Description: DIODE GEN PURP 400V 3A DO214AA
товар відсутній
ES3GBHM4G ES3GBHM4G Taiwan Semiconductor Corporation ES3AB%20SERIES_B1706.pdf Description: DIODE GEN PURP 400V 3A DO214AA
товар відсутній
ES3JB M4G ES3JB M4G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
ES3JBHM4G ES3JBHM4G Taiwan Semiconductor Corporation ES3AB%20SERIES_C2102.pdf Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
HS1K M2G HS1K M2G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 1A DO214AC
товар відсутній
HS1KL M2G HS1KL M2G Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS1KL MHG HS1KL MHG Taiwan Semiconductor Corporation HS1AL SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS1M M2G HS1M M2G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 1A DO214AC
товар відсутній
HS1ML M2G HS1ML M2G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
BZD27C22PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C22PHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22.05V 1W SUB SMA
товар відсутній
BZD27C27PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C27PHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Tolerance: ±7.03%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
товар відсутній
BZD27C27PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C27PHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 1W SUB SMA
Tolerance: ±7.03%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 20 V
товар відсутній
BZD27C30PHM2G BZD27C%20SERIES_AA1806.pdf
BZD27C30PHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
товар відсутній
BZD27C30PHMHG BZD27C%20SERIES_AA1806.pdf
BZD27C30PHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SUB SMA
товар відсутній
BZD27C68P M2G BZD27C%20SERIES_AA1806.pdf
BZD27C68P M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 1W SUB SMA
товар відсутній
BZD27C6V8P M2G BZD27C6V8P_BZD27C220P_Jun2017.pdf
BZD27C6V8P M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 1W SUB SMA
товар відсутній
ES1B M2G ES1A%20SERIES_M15.pdf
ES1B M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
товар відсутній
ES1BHM2G ES1A%20SERIES_O2112.pdf
ES1BHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
товар відсутній
ES1BL M2G ES1AL%20SERIES_L2103.pdf
ES1BL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
ES1BL MHG ES1AL%20SERIES_L2103.pdf
ES1BL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SUB SMA
товар відсутній
ES1D M2G ES1A%20SERIES_O2112.pdf
ES1D M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES1DHM2G ES1A%20SERIES_N2102.pdf
ES1DHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES1DL M2G ES1AL%20SERIES_L2103.pdf
ES1DL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
ES1DV M2G ES1DV_C2102.pdf
ES1DV M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
товар відсутній
ES1G M2G ES1A%20SERIES_M15.pdf
ES1G M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
ES1GHM2G ES1A%20SERIES_M15.pdf
ES1GHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
товар відсутній
ES1GL M2G ES1AL%20SERIES_K15.pdf
ES1GL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
ES1GL MHG ES1AL%20SERIES_K15.pdf
ES1GL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
товар відсутній
ES1J M2G ES1A%20SERIES_O2112.pdf
ES1J M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
ES1JHM2G ES1A%20SERIES_O2112.pdf
ES1JHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
товар відсутній
ES1JL M2G ES1AL%20SERIES_L2103.pdf
ES1JL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
товар відсутній
ES1JL MHG ES1AL%20SERIES_L2103.pdf
ES1JL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
ES1JLHM2G ES1AL%20SERIES_L2103.pdf
ES1JLHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
ES1JLHMHG ES1AL%20SERIES_L2103.pdf
ES1JLHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ES2B M4G ES2A%20SERIES_L2102.pdf
ES2B M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES2BA M2G ES2AA%20SERIES_M2102.pdf
ES2BA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
ES2BAHM2G ES2AA%20SERIES_M2102.pdf
ES2BAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
ES2BHM4G ES2A%20SERIES_L2102.pdf
ES2BHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
ES2C M4G ES2A%20SERIES_L2102.pdf
ES2C M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
ES2CA M2G ES2AA%20SERIES_M2102.pdf
ES2CA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
ES2CAHM2G ES2AA%20SERIES_M2102.pdf
ES2CAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES2CHM4G ES2A%20SERIES_L2102.pdf
ES2CHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
ES2D M4G ES2A%20SERIES_L2102.pdf
ES2D M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2DA M2G ES2AA%20SERIES_M2102.pdf
ES2DA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AC
товар відсутній
ES2DAHM2G ES2AA%20SERIES_M2102.pdf
ES2DAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AC
товар відсутній
ES2DHM4G ES2A%20SERIES_L2102.pdf
ES2DHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2DV M4G ES2DV_C2102.pdf
ES2DV M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2DVHM4G ES2DV_C2102.pdf
ES2DVHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO214AA
товар відсутній
ES2F M4G ES2A%20SERIES_K1701.pdf
ES2F M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO214AA
товар відсутній
ES2FA M2G ES2AA%20SERIES_L15.pdf
ES2FA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO214AC
товар відсутній
ES2FAHM2G ES2AA%20SERIES_L15.pdf
ES2FAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO214AC
товар відсутній
ES2FHM4G ES2A%20SERIES_K1701.pdf
ES2FHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO214AA
товар відсутній
ES2G M4G ES2A%20SERIES_L2102.pdf
ES2G M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO214AA
товар відсутній
ES2GA M2G ES2AA%20SERIES_M2102.pdf
ES2GA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO214AC
товар відсутній
ES2GAHM2G ES2AA%20SERIES_M2102.pdf
ES2GAHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO214AC
товар відсутній
ES2GHM4G ES2A%20SERIES_L2102.pdf
ES2GHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO214AA
товар відсутній
ES3DB M4G ES3AB%20SERIES_C2102.pdf
ES3DB M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
товар відсутній
ES3DBHM4G ES3AB%20SERIES_C2102.pdf
ES3DBHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
ES3FB M4G ES3AB%20SERIES_B1706.pdf
ES3FB M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
товар відсутній
ES3FBHM4G ES3AB%20SERIES_B1706.pdf
ES3FBHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
товар відсутній
ES3GB M4G ES3AB%20SERIES_B1706.pdf
ES3GB M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
товар відсутній
ES3GBHM4G ES3AB%20SERIES_B1706.pdf
ES3GBHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO214AA
товар відсутній
ES3JB M4G ES3AB%20SERIES_C2102.pdf
ES3JB M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
ES3JBHM4G ES3AB%20SERIES_C2102.pdf
ES3JBHM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
товар відсутній
HS1K M2G HS1A%20SERIES_L2102.pdf
HS1K M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
товар відсутній
HS1KL M2G HS1AL SERIES_C2103.pdf
HS1KL M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS1KL MHG HS1AL SERIES_C2103.pdf
HS1KL MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
HS1M M2G HS1A%20SERIES_L2102.pdf
HS1M M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AC
товар відсутній
HS1ML M2G HS1AL%20SERIES_C2103.pdf
HS1ML M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 39 41 42 43 44 45 46 47 48 49 50 51 78 117 156 195 234 273 312 351 390 395  [ Наступна Сторінка >> ]