ES1GL M2G

ES1GL M2G Taiwan Semiconductor Corporation


ES1AL%20SERIES_K15.pdf Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
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Технічний опис ES1GL M2G Taiwan Semiconductor Corporation

Category: SMD universal diodes, Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V; Ifsm: 30A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.4kV, Load current: 1A, Reverse recovery time: 35ns, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 8pF, Case: subSMA, Max. forward voltage: 1.3V, Max. forward impulse current: 30A, Kind of package: reel; tape.

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ES1GL M2G ES1GL M2G Виробник : Taiwan Semiconductor ES1AL_SERIES_K15-1606161.pdf Rectifiers 35ns 1A 400V Sp Fst Recov Rectifier
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ES1GL M2G ES1GL M2G Виробник : TAIWAN SEMICONDUCTOR ES1DL-R2G.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Capacitance: 8pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
товар відсутній