Технічний опис ES1GL M2G Taiwan Semiconductor Corporation
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V; Ifsm: 30A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.4kV, Load current: 1A, Reverse recovery time: 35ns, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 8pF, Case: subSMA, Max. forward voltage: 1.3V, Max. forward impulse current: 30A, Kind of package: reel; tape.
Інші пропозиції ES1GL M2G
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ES1GL M2G | Виробник : Taiwan Semiconductor |
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ES1GL M2G | Виробник : TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 8pF Case: subSMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
товар відсутній |