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1T5GH 1T5GH Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: 1A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
15+21.11 грн
21+ 13.94 грн
100+ 6.79 грн
500+ 5.32 грн
1000+ 3.7 грн
2000+ 3.2 грн
Мінімальне замовлення: 15
1T7GH 1T7GH Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: 1A, 1000V, STANDARD RECOVERY REC
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
15+21.11 грн
21+ 13.94 грн
100+ 6.79 грн
500+ 5.32 грн
1000+ 3.7 грн
2000+ 3.2 грн
Мінімальне замовлення: 15
1T6GH 1T6GH Taiwan Semiconductor Corporation 1T1G SERIES_H2104.pdf Description: 1A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
15+21.11 грн
21+ 13.94 грн
100+ 6.79 грн
500+ 5.32 грн
1000+ 3.7 грн
2000+ 3.2 грн
Мінімальне замовлення: 15
F1T4GH F1T4GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
16+ 18.15 грн
100+ 8.85 грн
500+ 6.92 грн
1000+ 4.81 грн
2000+ 4.17 грн
Мінімальне замовлення: 12
F1T5GH F1T5GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
12+27.14 грн
16+ 18.15 грн
100+ 8.85 грн
500+ 6.92 грн
1000+ 4.81 грн
2000+ 4.17 грн
Мінімальне замовлення: 12
F1T6GH F1T6GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 800V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
13+24.88 грн
18+ 16.48 грн
100+ 8.31 грн
500+ 6.37 грн
1000+ 4.72 грн
2000+ 3.97 грн
Мінімальне замовлення: 13
F1T7GH F1T7GH Taiwan Semiconductor Corporation F1T1G SERIES_H2104.pdf Description: DIODE GEN PURP 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
13+24.88 грн
18+ 16.48 грн
100+ 8.31 грн
500+ 6.37 грн
1000+ 4.72 грн
2000+ 3.97 грн
Мінімальне замовлення: 13
SFT14GH SFT14GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06AH UG06AH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06BH UG06BH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 100V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06CH UG06CH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 150V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06DH UG06DH Taiwan Semiconductor Corporation UG06A SERIES_G2104.pdf Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
HT17GH HT17GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
HT18GH HT18GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
HT14GH HT14GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 50NS, 1A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
HT15GH HT15GH Taiwan Semiconductor Corporation HT11G SERIES_H2104.pdf Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
SFT15GH SFT15GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 300V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.29 грн
Мінімальне замовлення: 10
SFT16GH SFT16GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.29 грн
Мінімальне замовлення: 10
SFT18GH SFT18GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.29 грн
Мінімальне замовлення: 10
SSL24H SSL24H Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2715 шт:
термін постачання 21-31 дні (днів)
8+42.97 грн
10+ 35.43 грн
100+ 24.61 грн
500+ 18.03 грн
1000+ 14.66 грн
Мінімальне замовлення: 8
SSL24 SSL24 Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
TSM089N08LCR Taiwan Semiconductor Corporation Description: 80V, 67A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
товар відсутній
BAS40-05 RFG BAS40-05 RFG Taiwan Semiconductor Corporation BAS40 SERIES_H2001.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.61 грн
6000+ 3.22 грн
Мінімальне замовлення: 3000
BAS40-05 RFG BAS40-05 RFG Taiwan Semiconductor Corporation BAS40 SERIES_H2001.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
14+21.86 грн
21+ 14.16 грн
100+ 6.92 грн
500+ 5.42 грн
1000+ 3.76 грн
Мінімальне замовлення: 14
BYG20G BYG20G Taiwan Semiconductor Corporation BYG20D SERIES_F2102.pdf Description: DIODE GEN PURP 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.81 грн
1000+ 6.85 грн
2000+ 6.14 грн
Мінімальне замовлення: 10
BYG20D BYG20D Taiwan Semiconductor Corporation pdf.php?pn=BYG20D Description: DIODE GEN PURP 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
15+ 20.54 грн
100+ 10.34 грн
500+ 8.61 грн
1000+ 6.7 грн
2000+ 5.99 грн
Мінімальне замовлення: 10
BYG20JH BYG20JH Taiwan Semiconductor Corporation Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
15+ 20.69 грн
100+ 10.45 грн
500+ 8.69 грн
1000+ 6.76 грн
2000+ 6.05 грн
Мінімальне замовлення: 10
BYG20GH BYG20GH Taiwan Semiconductor Corporation BYG20DH SERIES_A2102.pdf Description: 75NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.81 грн
1000+ 6.85 грн
2000+ 6.14 грн
Мінімальне замовлення: 10
BYG20DH BYG20DH Taiwan Semiconductor Corporation pdf.php?pn=BYG20DH Description: 75NS, 1.5A, 200V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
10+30.15 грн
15+ 20.54 грн
100+ 10.34 грн
500+ 8.61 грн
1000+ 6.7 грн
2000+ 5.99 грн
Мінімальне замовлення: 10
GBPC3501 T0G GBPC3501 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC3501M T0G GBPC3501M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 100V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
BC848A RFG BC848A RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 30V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.29 грн
6000+ 2.09 грн
Мінімальне замовлення: 3000
BC848A RFG BC848A RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 30V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 8980 шт:
термін постачання 21-31 дні (днів)
23+13.57 грн
32+ 9.07 грн
100+ 4.89 грн
500+ 3.6 грн
1000+ 2.5 грн
Мінімальне замовлення: 23
BC848AW RFG BC848AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 30V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+2.58 грн
6000+ 2.35 грн
9000+ 2 грн
Мінімальне замовлення: 3000
BC848AW RFG BC848AW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 30V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
20+15.08 грн
29+ 10.16 грн
100+ 5.49 грн
500+ 4.05 грн
1000+ 2.81 грн
Мінімальне замовлення: 20
TS358CS RLG TS358CS RLG Taiwan Semiconductor Corporation TS358_B15.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+11.38 грн
Мінімальне замовлення: 2500
TS358CS RLG TS358CS RLG Taiwan Semiconductor Corporation TS358_B15.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 4955 шт:
термін постачання 21-31 дні (днів)
10+32.42 грн
11+ 26.57 грн
25+ 24.74 грн
100+ 18.58 грн
250+ 17.25 грн
500+ 14.6 грн
1000+ 11.09 грн
Мінімальне замовлення: 10
1N5223B A0G 1N5223B A0G Taiwan Semiconductor Corporation pdf.php?pn=1N5223B Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
товар відсутній
MBRS20150CT-Y MBRS20150CT-Y Taiwan Semiconductor Corporation MBRS2045CT-Y SERIES_E2201.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
MBRS20150CT MBRS20150CT Taiwan Semiconductor Corporation MBRS2035CT SERIES_N2103.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SRS20150 SRS20150 Taiwan Semiconductor Corporation SRS2020 SERIES_L2103.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SRS20150H SRS20150H Taiwan Semiconductor Corporation SRS2020H SERIES_A2103.pdf Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4SMA82CA P4SMA82CA Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA82C P4SMA82C Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: 400W, 82V, 10%, BIDIRECTIONAL, T
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 66.4V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 73.8V
Voltage - Clamping (Max) @ Ipp: 118V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA82CH P4SMA82CH Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: 400W, 82V, 10%, BIDIRECTIONAL, T
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 66.4V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 73.8V
Voltage - Clamping (Max) @ Ipp: 118V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRF2545CT-Y MBRF2545CT-Y Taiwan Semiconductor Corporation MBRF2545CT-Y SERIES_B2105.pdf Description: DIODE ARR SCHOT 45V 25A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товар відсутній
MBRS2545CT MBRS2545CT Taiwan Semiconductor Corporation MBRS2535CT SERIES_N2103.pdf Description: DIODE ARR SCHOTT 45V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товар відсутній
MBRF2545CTH MBRF2545CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 45V 25A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FR107GH FR107GH Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: 500NS, 1A, 1000V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+4.08 грн
Мінімальне замовлення: 5000
FR107GH FR107GH Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: 500NS, 1A, 1000V, FAST RECOVERY
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 9898 шт:
термін постачання 21-31 дні (днів)
12+26.39 грн
17+ 17.28 грн
100+ 8.42 грн
500+ 6.59 грн
1000+ 4.58 грн
2000+ 3.97 грн
Мінімальне замовлення: 12
US1JH US1JH Taiwan Semiconductor Corporation US1AH SERIES_A2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 14899 шт:
термін постачання 21-31 дні (днів)
12+26.39 грн
17+ 17.86 грн
100+ 9.03 грн
500+ 7.51 грн
1000+ 5.84 грн
2000+ 5.23 грн
Мінімальне замовлення: 12
1.5KE170H 1.5KE170H Taiwan Semiconductor Corporation pdf.php?pn=1.5KE170 Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170 1.5KE170 Taiwan Semiconductor Corporation pdf.php?pn=1.5KE170 Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170CA 1.5KE170CA Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS 1500W 170.5V 5% BIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170CH 1.5KE170CH Taiwan Semiconductor Corporation pdf.php?pn=1.5KE170C Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170C 1.5KE170C Taiwan Semiconductor Corporation pdf.php?pn=1.5KE170C Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
PU2BLS PU2BLS Taiwan Semiconductor Corporation PU2BLS SERIES_A2210.pdf Description: 25NS, 2A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+5.83 грн
Мінімальне замовлення: 10000
PU2BLS PU2BLS Taiwan Semiconductor Corporation PU2BLS SERIES_A2210.pdf Description: 25NS, 2A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
12+25.63 грн
16+ 18.66 грн
100+ 11.22 грн
500+ 9.75 грн
1000+ 6.63 грн
2000+ 6.11 грн
5000+ 5.76 грн
Мінімальне замовлення: 12
PU1BLS PU1BLS Taiwan Semiconductor Corporation PU1BLS SERIES_A2210.pdf Description: 25NS, 1A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+5.9 грн
Мінімальне замовлення: 10000
PU1BLS PU1BLS Taiwan Semiconductor Corporation PU1BLS SERIES_A2210.pdf Description: 25NS, 1A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10+30.91 грн
14+ 21.05 грн
100+ 10.63 грн
500+ 8.84 грн
1000+ 6.88 грн
2000+ 6.16 грн
5000+ 5.92 грн
Мінімальне замовлення: 10
1T5GH 1T1G SERIES_H2104.pdf
1T5GH
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 600V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+21.11 грн
21+ 13.94 грн
100+ 6.79 грн
500+ 5.32 грн
1000+ 3.7 грн
2000+ 3.2 грн
Мінімальне замовлення: 15
1T7GH 1T1G SERIES_H2104.pdf
1T7GH
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 1000V, STANDARD RECOVERY REC
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+21.11 грн
21+ 13.94 грн
100+ 6.79 грн
500+ 5.32 грн
1000+ 3.7 грн
2000+ 3.2 грн
Мінімальне замовлення: 15
1T6GH 1T1G SERIES_H2104.pdf
1T6GH
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 800V, STANDARD RECOVERY RECT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+21.11 грн
21+ 13.94 грн
100+ 6.79 грн
500+ 5.32 грн
1000+ 3.7 грн
2000+ 3.2 грн
Мінімальне замовлення: 15
F1T4GH F1T1G SERIES_H2104.pdf
F1T4GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
16+ 18.15 грн
100+ 8.85 грн
500+ 6.92 грн
1000+ 4.81 грн
2000+ 4.17 грн
Мінімальне замовлення: 12
F1T5GH F1T1G SERIES_H2104.pdf
F1T5GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+27.14 грн
16+ 18.15 грн
100+ 8.85 грн
500+ 6.92 грн
1000+ 4.81 грн
2000+ 4.17 грн
Мінімальне замовлення: 12
F1T6GH F1T1G SERIES_H2104.pdf
F1T6GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.88 грн
18+ 16.48 грн
100+ 8.31 грн
500+ 6.37 грн
1000+ 4.72 грн
2000+ 3.97 грн
Мінімальне замовлення: 13
F1T7GH F1T1G SERIES_H2104.pdf
F1T7GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+24.88 грн
18+ 16.48 грн
100+ 8.31 грн
500+ 6.37 грн
1000+ 4.72 грн
2000+ 3.97 грн
Мінімальне замовлення: 13
SFT14GH SFT11G SERIES_J2104.pdf
SFT14GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06AH UG06A SERIES_G2104.pdf
UG06AH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06BH UG06A SERIES_G2104.pdf
UG06BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06CH UG06A SERIES_G2104.pdf
UG06CH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
UG06DH UG06A SERIES_G2104.pdf
UG06DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+33.17 грн
13+ 22.43 грн
100+ 11.32 грн
500+ 8.67 грн
1000+ 6.43 грн
2000+ 5.41 грн
Мінімальне замовлення: 10
HT17GH HT11G SERIES_H2104.pdf
HT17GH
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 800V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
HT18GH HT11G SERIES_H2104.pdf
HT18GH
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
HT14GH HT11G SERIES_H2104.pdf
HT14GH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 300V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
HT15GH HT11G SERIES_H2104.pdf
HT15GH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+33.92 грн
13+ 22.58 грн
100+ 11.43 грн
500+ 8.75 грн
1000+ 6.49 грн
2000+ 5.46 грн
Мінімальне замовлення: 9
SFT15GH SFT11G SERIES_J2104.pdf
SFT15GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.29 грн
Мінімальне замовлення: 10
SFT16GH SFT11G SERIES_J2104.pdf
SFT16GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.29 грн
Мінімальне замовлення: 10
SFT18GH SFT11G SERIES_J2104.pdf
SFT18GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
14+ 21.56 грн
100+ 10.87 грн
500+ 9.04 грн
1000+ 7.03 грн
2000+ 6.29 грн
Мінімальне замовлення: 10
SSL24H
SSL24H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+42.97 грн
10+ 35.43 грн
100+ 24.61 грн
500+ 18.03 грн
1000+ 14.66 грн
Мінімальне замовлення: 8
SSL24
SSL24
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товар відсутній
TSM089N08LCR
Виробник: Taiwan Semiconductor Corporation
Description: 80V, 67A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Power Dissipation (Max): 2.6W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6119 pF @ 40 V
товар відсутній
BAS40-05 RFG BAS40 SERIES_H2001.pdf
BAS40-05 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.61 грн
6000+ 3.22 грн
Мінімальне замовлення: 3000
BAS40-05 RFG BAS40 SERIES_H2001.pdf
BAS40-05 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.86 грн
21+ 14.16 грн
100+ 6.92 грн
500+ 5.42 грн
1000+ 3.76 грн
Мінімальне замовлення: 14
BYG20G BYG20D SERIES_F2102.pdf
BYG20G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.81 грн
1000+ 6.85 грн
2000+ 6.14 грн
Мінімальне замовлення: 10
BYG20D pdf.php?pn=BYG20D
BYG20D
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
15+ 20.54 грн
100+ 10.34 грн
500+ 8.61 грн
1000+ 6.7 грн
2000+ 5.99 грн
Мінімальне замовлення: 10
BYG20JH
BYG20JH
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
15+ 20.69 грн
100+ 10.45 грн
500+ 8.69 грн
1000+ 6.76 грн
2000+ 6.05 грн
Мінімальне замовлення: 10
BYG20GH BYG20DH SERIES_A2102.pdf
BYG20GH
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 400V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
14+ 20.98 грн
100+ 10.59 грн
500+ 8.81 грн
1000+ 6.85 грн
2000+ 6.14 грн
Мінімальне замовлення: 10
BYG20DH pdf.php?pn=BYG20DH
BYG20DH
Виробник: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 200V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.15 грн
15+ 20.54 грн
100+ 10.34 грн
500+ 8.61 грн
1000+ 6.7 грн
2000+ 5.99 грн
Мінімальне замовлення: 10
GBPC3501 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3501 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
GBPC3501M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3501M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товар відсутній
BC848A RFG BC846A Series_I2001.pdf
BC848A RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.29 грн
6000+ 2.09 грн
Мінімальне замовлення: 3000
BC848A RFG BC846A Series_I2001.pdf
BC848A RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 8980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
23+13.57 грн
32+ 9.07 грн
100+ 4.89 грн
500+ 3.6 грн
1000+ 2.5 грн
Мінімальне замовлення: 23
BC848AW RFG BC846AW SERIES_C2102.pdf
BC848AW RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.58 грн
6000+ 2.35 грн
9000+ 2 грн
Мінімальне замовлення: 3000
BC848AW RFG BC846AW SERIES_C2102.pdf
BC848AW RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 30V 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.08 грн
29+ 10.16 грн
100+ 5.49 грн
500+ 4.05 грн
1000+ 2.81 грн
Мінімальне замовлення: 20
TS358CS RLG TS358_B15.pdf
TS358CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+11.38 грн
Мінімальне замовлення: 2500
TS358CS RLG TS358_B15.pdf
TS358CS RLG
Виробник: Taiwan Semiconductor Corporation
Description: IC OPAMP GP 2 CIRCUIT 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -20°C ~ 85°C
Current - Supply: 1.5mA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOP
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 4955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.42 грн
11+ 26.57 грн
25+ 24.74 грн
100+ 18.58 грн
250+ 17.25 грн
500+ 14.6 грн
1000+ 11.09 грн
Мінімальне замовлення: 10
1N5223B A0G pdf.php?pn=1N5223B
1N5223B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
товар відсутній
MBRS20150CT-Y MBRS2045CT-Y SERIES_E2201.pdf
MBRS20150CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
MBRS20150CT MBRS2035CT SERIES_N2103.pdf
MBRS20150CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SRS20150 SRS2020 SERIES_L2103.pdf
SRS20150
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
SRS20150H SRS2020H SERIES_A2103.pdf
SRS20150H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
P4SMA82CA P4SMA SERIES_S2102.pdf
P4SMA82CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA82C P4SMA SERIES_S2102.pdf
P4SMA82C
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 82V, 10%, BIDIRECTIONAL, T
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 66.4V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 73.8V
Voltage - Clamping (Max) @ Ipp: 118V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
P4SMA82CH P4SMAH SERIES_A2102.pdf
P4SMA82CH
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 82V, 10%, BIDIRECTIONAL, T
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 66.4V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 73.8V
Voltage - Clamping (Max) @ Ipp: 118V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MBRF2545CT-Y MBRF2545CT-Y SERIES_B2105.pdf
MBRF2545CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 25A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товар відсутній
MBRS2545CT MBRS2535CT SERIES_N2103.pdf
MBRS2545CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товар відсутній
MBRF2545CTH
MBRF2545CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 25A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FR107GH FR101G SERIES_H2104.pdf
FR107GH
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+4.08 грн
Мінімальне замовлення: 5000
FR107GH FR101G SERIES_H2104.pdf
FR107GH
Виробник: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 9898 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.39 грн
17+ 17.28 грн
100+ 8.42 грн
500+ 6.59 грн
1000+ 4.58 грн
2000+ 3.97 грн
Мінімальне замовлення: 12
US1JH US1AH SERIES_A2102.pdf
US1JH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 14899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.39 грн
17+ 17.86 грн
100+ 9.03 грн
500+ 7.51 грн
1000+ 5.84 грн
2000+ 5.23 грн
Мінімальне замовлення: 12
1.5KE170H pdf.php?pn=1.5KE170
1.5KE170H
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170 pdf.php?pn=1.5KE170
1.5KE170
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170CA 1.5KE SERIES_O2104.pdf
1.5KE170CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS 1500W 170.5V 5% BIDIR DO-201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170CH pdf.php?pn=1.5KE170C
1.5KE170CH
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5KE170C pdf.php?pn=1.5KE170C
1.5KE170C
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 170V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
PU2BLS PU2BLS SERIES_A2210.pdf
PU2BLS
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 200V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.83 грн
Мінімальне замовлення: 10000
PU2BLS PU2BLS SERIES_A2210.pdf
PU2BLS
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 200V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.63 грн
16+ 18.66 грн
100+ 11.22 грн
500+ 9.75 грн
1000+ 6.63 грн
2000+ 6.11 грн
5000+ 5.76 грн
Мінімальне замовлення: 12
PU1BLS PU1BLS SERIES_A2210.pdf
PU1BLS
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.9 грн
Мінімальне замовлення: 10000
PU1BLS PU1BLS SERIES_A2210.pdf
PU1BLS
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.91 грн
14+ 21.05 грн
100+ 10.63 грн
500+ 8.84 грн
1000+ 6.88 грн
2000+ 6.16 грн
5000+ 5.92 грн
Мінімальне замовлення: 10
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