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SFAF1607GHC0G SFAF1607GHC0G Taiwan Semiconductor Corporation SFAF1601G%20SERIES_H2105.pdf Description: DIODE GEN PURP 500V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
SFAF1608G C0G SFAF1608G C0G Taiwan Semiconductor Corporation SFAF1601G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
SFAF1608GHC0G SFAF1608GHC0G Taiwan Semiconductor Corporation SFAF1601G%20SERIES_H2105.pdf Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
SFAF2001G C0G SFAF2001G C0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 50V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
SFAF2001GHC0G SFAF2001GHC0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 50V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
SFAF2002G C0G SFAF2002G C0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
SFAF2002GHC0G SFAF2002GHC0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
SFAF2003G C0G SFAF2003G C0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 150V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
SFAF2003GHC0G SFAF2003GHC0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 150V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
SFAF2005G C0G SFAF2005G C0G Taiwan Semiconductor Corporation SFAF2001G%20SERIES_J2105.pdf Description: DIODE GEN PURP 300V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
MBRF7100 C0G MBRF7100 C0G Taiwan Semiconductor Corporation MBRF735%20SERIES_K2105.pdf Description: DIODE SCHOTT 100V 7.5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
MBRF7100HC0G MBRF7100HC0G Taiwan Semiconductor Corporation MBRF735%20SERIES_K2105.pdf Description: DIODE SCHOTT 100V 7.5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
TST30H200CW TST30H200CW Taiwan Semiconductor Corporation TST30H100CW SERIES_F2104.pdf Description: DIODE SCHOTTKY 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
3+108.56 грн
50+ 84.09 грн
100+ 66.64 грн
500+ 53.01 грн
Мінімальне замовлення: 3
TST30L45C TST30L45C Taiwan Semiconductor Corporation pdf.php?pn=TST30L45C Description: DIODE ARR SCHOTT 45V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Current - Reverse Leakage @ Vr: 650 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+79.16 грн
10+ 62.72 грн
100+ 48.79 грн
500+ 38.81 грн
1000+ 31.62 грн
Мінімальне замовлення: 4
GBPC5008M GBPC5008M Taiwan Semiconductor Corporation GBPC40_50 SERIES_G2211.pdf Description: 50A, 800V, STANDARD BRIDGE RECTI
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
1+339.24 грн
10+ 273.83 грн
25+ 258.47 грн
GBPC5008 GBPC5008 Taiwan Semiconductor Corporation GBPC40_50 SERIES_G2211.pdf Description: 50A, 800V, STANDARD BRIDGE RECTI
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
1+339.24 грн
10+ 273.83 грн
25+ 258.47 грн
BZT55C5V1 BZT55C5V1 Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_I2301.pdf Description: QMMELF, 500MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
BZT55B5V1 BZT55B5V1 Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
BZT55C7V5 L0G BZT55C7V5 L0G Taiwan Semiconductor Corporation pdf.php?pn=BZT55C7V5 Description: DIODE ZENER 7.5V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
товар відсутній
BZT55C7V5 BZT55C7V5 Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_I2301.pdf Description: QMMELF, 500MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
товар відсутній
BZT55B7V5 BZT55B7V5 Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
товар відсутній
BZT52B56S BZT52B56S Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: SOD-323F, 200MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56 RHG BZT52B56 RHG Taiwan Semiconductor Corporation BZT52B2V4%20series_F15.pdf Description: DIODE ZENER 56V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56 Taiwan Semiconductor Corporation BZT52B2V4%20series_F15.pdf Description: SOD-123F, 500MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56-G Taiwan Semiconductor Corporation BZT52B2V4-G%20SERIES_H2002.pdf Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56S RRG BZT52B56S RRG Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 56V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
FR205GH FR205GH Taiwan Semiconductor Corporation Description: 250NS, 2A, 600V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
3500+6.03 грн
7000+ 5.55 грн
Мінімальне замовлення: 3500
SR804 SR804 Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 40V 8A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR804H SR804H Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 40V 8A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
1.5SMC100 1.5SMC100 Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: 1500W, 100V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
LL4148 L0G LL4148 L0G Taiwan Semiconductor Corporation LL4148 SERIES_K2301.pdf Description: DIODE GP 75V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
S1MH S1MH Taiwan Semiconductor Corporation pdf.php?pn=S1MH Description: DIODE GEN PURP 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+3.99 грн
Мінімальне замовлення: 7500
S1MH S1MH Taiwan Semiconductor Corporation pdf.php?pn=S1MH Description: DIODE GEN PURP 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 14840 шт:
термін постачання 21-31 дні (днів)
12+25.63 грн
18+ 16.91 грн
100+ 8.25 грн
500+ 6.45 грн
1000+ 4.48 грн
2000+ 3.89 грн
Мінімальне замовлення: 12
BAS40-06 RFG BAS40-06 RFG Taiwan Semiconductor Corporation BAS40 SERIES_H2001.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.57 грн
6000+ 3.19 грн
Мінімальне замовлення: 3000
BAS40-06 RFG BAS40-06 RFG Taiwan Semiconductor Corporation BAS40 SERIES_H2001.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
14+21.86 грн
21+ 14.01 грн
100+ 6.85 грн
500+ 5.36 грн
1000+ 3.73 грн
Мінімальне замовлення: 14
BAS40-06 BAS40-06 Taiwan Semiconductor Corporation bas40.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
товар відсутній
SMCJ48 SMCJ48 Taiwan Semiconductor Corporation pdf.php?pn=SMCJ48 Description: 1500W, 59.2V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 85.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+15.01 грн
Мінімальне замовлення: 3000
SMCJ48 SMCJ48 Taiwan Semiconductor Corporation pdf.php?pn=SMCJ48 Description: 1500W, 59.2V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 85.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
7+44.48 грн
10+ 36.59 грн
100+ 25.48 грн
500+ 18.67 грн
1000+ 15.17 грн
Мінімальне замовлення: 7
BZT52B27S R9G BZT52B27S R9G Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.31 грн
Мінімальне замовлення: 10000
BZT52B27S R9G BZT52B27S R9G Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
17+18.09 грн
25+ 11.83 грн
100+ 5.76 грн
500+ 4.51 грн
1000+ 3.13 грн
2000+ 2.72 грн
5000+ 2.48 грн
Мінімальне замовлення: 17
BZT52B30S R9G BZT52B30S R9G Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 30V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.31 грн
Мінімальне замовлення: 10000
BZT52B30S R9G BZT52B30S R9G Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 30V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
17+18.09 грн
25+ 11.83 грн
100+ 5.76 грн
500+ 4.51 грн
1000+ 3.13 грн
2000+ 2.72 грн
5000+ 2.48 грн
Мінімальне замовлення: 17
BZT52B10S R9G BZT52B10S R9G Taiwan Semiconductor Corporation BZT52B2V4S SERIES_H2212.pdf Description: DIODE ZENER 10V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
товар відсутній
BZT52B10S R9G BZT52B10S R9G Taiwan Semiconductor Corporation BZT52B2V4S SERIES_H2212.pdf Description: DIODE ZENER 10V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
18+17.34 грн
25+ 11.62 грн
100+ 5.66 грн
500+ 4.43 грн
1000+ 3.08 грн
2000+ 2.67 грн
5000+ 2.43 грн
Мінімальне замовлення: 18
BZT52B47S R9G BZT52B47S R9G Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 47V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 33 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.62 грн
Мінімальне замовлення: 10000
BZT52B47S R9G BZT52B47S R9G Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 47V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 33 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
15+20.35 грн
22+ 13.36 грн
100+ 6.54 грн
500+ 5.12 грн
1000+ 3.55 грн
2000+ 3.08 грн
5000+ 2.81 грн
Мінімальне замовлення: 15
TSM043NB04LCZ C0G Taiwan Semiconductor Corporation TSM043NB04LCZ_A2008.pdf Description: 40V, 124A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2+236.72 грн
10+ 191.43 грн
100+ 154.85 грн
500+ 129.18 грн
1000+ 110.61 грн
2000+ 104.15 грн
Мінімальне замовлення: 2
MBR2545CTH MBR2545CTH Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTT 45V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
товар відсутній
SRF10100H SRF10100H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
BY253G Taiwan Semiconductor Corporation BY251G%20SERIES_D2105.pdf Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
TS2596CM533 RNG TS2596CM533 RNG Taiwan Semiconductor Corporation TS2596_G1608.pdf Description: IC REG BUCK 3.3V 3A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-263-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 3.3V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
800+113.13 грн
1600+ 90.27 грн
2400+ 84.04 грн
Мінімальне замовлення: 800
TS2596CM533 RNG TS2596CM533 RNG Taiwan Semiconductor Corporation TS2596_G1608.pdf Description: IC REG BUCK 3.3V 3A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-263-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 3.3V
на замовлення 3986 шт:
термін постачання 21-31 дні (днів)
2+190.73 грн
10+ 164.94 грн
25+ 155.61 грн
100+ 124.44 грн
250+ 116.84 грн
Мінімальне замовлення: 2
BZX55C20 A0G BZX55C20 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 20V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
товар відсутній
1N5226B A0G 1N5226B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
1N5239B A0G 1N5239B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
товар відсутній
MBRAD20100H MBRAD20100H Taiwan Semiconductor Corporation Description: 20A, 100V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 494pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
MBRAD20100H MBRAD20100H Taiwan Semiconductor Corporation Description: 20A, 100V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 494pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 4497 шт:
термін постачання 21-31 дні (днів)
5+67.85 грн
10+ 53.07 грн
100+ 41.32 грн
500+ 32.87 грн
1000+ 26.77 грн
2000+ 25.2 грн
Мінімальне замовлення: 5
MBRAD20150H MBRAD20150H Taiwan Semiconductor Corporation MBRAD20150H_A2303.pdf Description: 20A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 389pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRAD20150H MBRAD20150H Taiwan Semiconductor Corporation MBRAD20150H_A2303.pdf Description: 20A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 389pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4462 шт:
термін постачання 21-31 дні (днів)
5+71.62 грн
10+ 56.26 грн
100+ 43.77 грн
500+ 34.82 грн
1000+ 28.36 грн
2000+ 26.7 грн
Мінімальне замовлення: 5
BZV55B6V8 L0G BZV55B6V8 L0G Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 6.8V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
товар відсутній
SFAF1607GHC0G SFAF1601G%20SERIES_H2105.pdf
SFAF1607GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
товар відсутній
SFAF1608G C0G SFAF1601G%20SERIES_H2105.pdf
SFAF1608G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
SFAF1608GHC0G SFAF1601G%20SERIES_H2105.pdf
SFAF1608GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
SFAF2001G C0G SFAF2001G%20SERIES_J2105.pdf
SFAF2001G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
SFAF2001GHC0G SFAF2001G%20SERIES_J2105.pdf
SFAF2001GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
SFAF2002G C0G SFAF2001G%20SERIES_J2105.pdf
SFAF2002G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
SFAF2002GHC0G SFAF2001G%20SERIES_J2105.pdf
SFAF2002GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
SFAF2003G C0G SFAF2001G%20SERIES_J2105.pdf
SFAF2003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
SFAF2003GHC0G SFAF2001G%20SERIES_J2105.pdf
SFAF2003GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
SFAF2005G C0G SFAF2001G%20SERIES_J2105.pdf
SFAF2005G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
MBRF7100 C0G MBRF735%20SERIES_K2105.pdf
MBRF7100 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTT 100V 7.5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
MBRF7100HC0G MBRF735%20SERIES_K2105.pdf
MBRF7100HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTT 100V 7.5A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
TST30H200CW TST30H100CW SERIES_F2104.pdf
TST30H200CW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.56 грн
50+ 84.09 грн
100+ 66.64 грн
500+ 53.01 грн
Мінімальне замовлення: 3
TST30L45C pdf.php?pn=TST30L45C
TST30L45C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Current - Reverse Leakage @ Vr: 650 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+79.16 грн
10+ 62.72 грн
100+ 48.79 грн
500+ 38.81 грн
1000+ 31.62 грн
Мінімальне замовлення: 4
GBPC5008M GBPC40_50 SERIES_G2211.pdf
GBPC5008M
Виробник: Taiwan Semiconductor Corporation
Description: 50A, 800V, STANDARD BRIDGE RECTI
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+339.24 грн
10+ 273.83 грн
25+ 258.47 грн
GBPC5008 GBPC40_50 SERIES_G2211.pdf
GBPC5008
Виробник: Taiwan Semiconductor Corporation
Description: 50A, 800V, STANDARD BRIDGE RECTI
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+339.24 грн
10+ 273.83 грн
25+ 258.47 грн
BZT55C5V1 BZT55C2V4%20SERIES_I2301.pdf
BZT55C5V1
Виробник: Taiwan Semiconductor Corporation
Description: QMMELF, 500MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
BZT55B5V1 BZT55B2V4%20SERIES_I2301.pdf
BZT55B5V1
Виробник: Taiwan Semiconductor Corporation
Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
BZT55C7V5 L0G pdf.php?pn=BZT55C7V5
BZT55C7V5 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
товар відсутній
BZT55C7V5 BZT55C2V4%20SERIES_I2301.pdf
BZT55C7V5
Виробник: Taiwan Semiconductor Corporation
Description: QMMELF, 500MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
товар відсутній
BZT55B7V5 BZT55B2V4%20SERIES_I2301.pdf
BZT55B7V5
Виробник: Taiwan Semiconductor Corporation
Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
товар відсутній
BZT52B56S BZT52B2V4S%20SERIES_H2212.pdf
BZT52B56S
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56 RHG BZT52B2V4%20series_F15.pdf
BZT52B56 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56 BZT52B2V4%20series_F15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123F, 500MW, 2%, SMALL SIGNA
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56-G BZT52B2V4-G%20SERIES_H2002.pdf
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
BZT52B56S RRG BZT52B2V4S%20SERIES_H2212.pdf
BZT52B56S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V
товар відсутній
FR205GH
FR205GH
Виробник: Taiwan Semiconductor Corporation
Description: 250NS, 2A, 600V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3500+6.03 грн
7000+ 5.55 грн
Мінімальне замовлення: 3500
SR804 SR802%20SERIES_J2105.pdf
SR804
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 8A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
SR804H SR802%20SERIES_J2105.pdf
SR804H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 8A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
1.5SMC100 1.5SMC%20SERIES_S2207.pdf
1.5SMC100
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 100V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
LL4148 L0G LL4148 SERIES_K2301.pdf
LL4148 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 75V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
товар відсутній
S1MH pdf.php?pn=S1MH
S1MH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7500+3.99 грн
Мінімальне замовлення: 7500
S1MH pdf.php?pn=S1MH
S1MH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 14840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.63 грн
18+ 16.91 грн
100+ 8.25 грн
500+ 6.45 грн
1000+ 4.48 грн
2000+ 3.89 грн
Мінімальне замовлення: 12
BAS40-06 RFG BAS40 SERIES_H2001.pdf
BAS40-06 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+3.57 грн
6000+ 3.19 грн
Мінімальне замовлення: 3000
BAS40-06 RFG BAS40 SERIES_H2001.pdf
BAS40-06 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.86 грн
21+ 14.01 грн
100+ 6.85 грн
500+ 5.36 грн
1000+ 3.73 грн
Мінімальне замовлення: 14
BAS40-06 bas40.pdf
BAS40-06
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
товар відсутній
SMCJ48 pdf.php?pn=SMCJ48
SMCJ48
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 59.2V, 10%, UNIDIRECTIONA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 85.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+15.01 грн
Мінімальне замовлення: 3000
SMCJ48 pdf.php?pn=SMCJ48
SMCJ48
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 59.2V, 10%, UNIDIRECTIONA
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 85.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+44.48 грн
10+ 36.59 грн
100+ 25.48 грн
500+ 18.67 грн
1000+ 15.17 грн
Мінімальне замовлення: 7
BZT52B27S R9G BZT52B2V4S%20SERIES_H2212.pdf
BZT52B27S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+2.31 грн
Мінімальне замовлення: 10000
BZT52B27S R9G BZT52B2V4S%20SERIES_H2212.pdf
BZT52B27S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
17+18.09 грн
25+ 11.83 грн
100+ 5.76 грн
500+ 4.51 грн
1000+ 3.13 грн
2000+ 2.72 грн
5000+ 2.48 грн
Мінімальне замовлення: 17
BZT52B30S R9G BZT52B2V4S%20SERIES_H2212.pdf
BZT52B30S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+2.31 грн
Мінімальне замовлення: 10000
BZT52B30S R9G BZT52B2V4S%20SERIES_H2212.pdf
BZT52B30S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 21 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
17+18.09 грн
25+ 11.83 грн
100+ 5.76 грн
500+ 4.51 грн
1000+ 3.13 грн
2000+ 2.72 грн
5000+ 2.48 грн
Мінімальне замовлення: 17
BZT52B10S R9G BZT52B2V4S SERIES_H2212.pdf
BZT52B10S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
товар відсутній
BZT52B10S R9G BZT52B2V4S SERIES_H2212.pdf
BZT52B10S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 180 nA @ 7 V
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
18+17.34 грн
25+ 11.62 грн
100+ 5.66 грн
500+ 4.43 грн
1000+ 3.08 грн
2000+ 2.67 грн
5000+ 2.43 грн
Мінімальне замовлення: 18
BZT52B47S R9G BZT52B2V4S%20SERIES_H2212.pdf
BZT52B47S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 33 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+2.62 грн
Мінімальне замовлення: 10000
BZT52B47S R9G BZT52B2V4S%20SERIES_H2212.pdf
BZT52B47S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 33 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15+20.35 грн
22+ 13.36 грн
100+ 6.54 грн
500+ 5.12 грн
1000+ 3.55 грн
2000+ 3.08 грн
5000+ 2.81 грн
Мінімальне замовлення: 15
TSM043NB04LCZ C0G TSM043NB04LCZ_A2008.pdf
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 124A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+236.72 грн
10+ 191.43 грн
100+ 154.85 грн
500+ 129.18 грн
1000+ 110.61 грн
2000+ 104.15 грн
Мінімальне замовлення: 2
MBR2545CTH
MBR2545CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
товар відсутній
SRF10100H
SRF10100H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
BY253G BY251G%20SERIES_D2105.pdf
Виробник: Taiwan Semiconductor Corporation
Description: 3A, 600V, STANDARD RECOVERY RECT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
TS2596CM533 RNG TS2596_G1608.pdf
TS2596CM533 RNG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG BUCK 3.3V 3A TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-263-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 3.3V
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+113.13 грн
1600+ 90.27 грн
2400+ 84.04 грн
Мінімальне замовлення: 800
TS2596CM533 RNG TS2596_G1608.pdf
TS2596CM533 RNG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG BUCK 3.3V 3A TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck
Supplier Device Package: TO-263-5
Synchronous Rectifier: No
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 3.3V
на замовлення 3986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+190.73 грн
10+ 164.94 грн
25+ 155.61 грн
100+ 124.44 грн
250+ 116.84 грн
Мінімальне замовлення: 2
BZX55C20 A0G BZX55C2V0%20SERIES_E2301.pdf
BZX55C20 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
товар відсутній
1N5226B A0G 1N5221B%20SERIES_G1804.pdf
1N5226B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
1N5239B A0G 1N5221B SERIES_H2301.pdf
1N5239B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
товар відсутній
MBRAD20100H
MBRAD20100H
Виробник: Taiwan Semiconductor Corporation
Description: 20A, 100V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 494pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
MBRAD20100H
MBRAD20100H
Виробник: Taiwan Semiconductor Corporation
Description: 20A, 100V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 494pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 4497 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+67.85 грн
10+ 53.07 грн
100+ 41.32 грн
500+ 32.87 грн
1000+ 26.77 грн
2000+ 25.2 грн
Мінімальне замовлення: 5
MBRAD20150H MBRAD20150H_A2303.pdf
MBRAD20150H
Виробник: Taiwan Semiconductor Corporation
Description: 20A, 150V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 389pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
MBRAD20150H MBRAD20150H_A2303.pdf
MBRAD20150H
Виробник: Taiwan Semiconductor Corporation
Description: 20A, 150V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 389pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: AEC-Q101
на замовлення 4462 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.62 грн
10+ 56.26 грн
100+ 43.77 грн
500+ 34.82 грн
1000+ 28.36 грн
2000+ 26.7 грн
Мінімальне замовлення: 5
BZV55B6V8 L0G BZV55B2V4%20SERIES_G2301.pdf
BZV55B6V8 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
товар відсутній
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