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BU33UC3WG-TR BU33UC3WG-TR Rohm Semiconductor BUxxUC3WG.pdf Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+13.97 грн
Мінімальне замовлення: 3000
BU33UC3WG-TR BU33UC3WG-TR Rohm Semiconductor BUxxUC3WG.pdf Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 3571 шт:
термін постачання 21-31 дні (днів)
8+39.54 грн
10+ 32.58 грн
25+ 30.37 грн
100+ 22.81 грн
250+ 21.18 грн
500+ 17.92 грн
1000+ 13.62 грн
Мінімальне замовлення: 8
BU33SA4WGWL-E2 BU33SA4WGWL-E2 Rohm Semiconductor datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.32 грн
Мінімальне замовлення: 3000
BU33SA4WGWL-E2 BU33SA4WGWL-E2 Rohm Semiconductor datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 3555 шт:
термін постачання 21-31 дні (днів)
8+41.06 грн
10+ 33.68 грн
25+ 31.45 грн
100+ 23.61 грн
250+ 21.92 грн
500+ 18.55 грн
1000+ 14.1 грн
Мінімальне замовлення: 8
BU33JA2DG-CTR BU33JA2DG-CTR Rohm Semiconductor Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+27.63 грн
6000+ 25.28 грн
Мінімальне замовлення: 3000
BU33JA2DG-CTR BU33JA2DG-CTR Rohm Semiconductor Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 10779 шт:
термін постачання 21-31 дні (днів)
5+65.39 грн
10+ 56.08 грн
25+ 53.21 грн
100+ 41.02 грн
250+ 38.35 грн
500+ 33.89 грн
1000+ 26.31 грн
Мінімальне замовлення: 5
BU33JA2VG-CGTR BU33JA2VG-CGTR Rohm Semiconductor datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
товар відсутній
BU33JA2VG-CGTR BU33JA2VG-CGTR Rohm Semiconductor datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
на замовлення 2546 шт:
термін постачання 21-31 дні (днів)
5+68.43 грн
10+ 58.86 грн
25+ 55.85 грн
100+ 43.05 грн
250+ 40.24 грн
500+ 35.56 грн
1000+ 27.62 грн
Мінімальне замовлення: 5
SFR03EZPJ101 SFR03EZPJ101 Rohm Semiconductor sfr-e.pdf Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
товар відсутній
SFR03EZPJ101 SFR03EZPJ101 Rohm Semiconductor sfr-e.pdf Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
37+8.36 грн
41+ 7.18 грн
106+ 2.77 грн
1000+ 1.14 грн
2500+ 0.99 грн
Мінімальне замовлення: 37
LTR100JZPF1R50 LTR100JZPF1R50 Rohm Semiconductor ltr-e.pdf Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
товар відсутній
LTR100JZPF1R50 LTR100JZPF1R50 Rohm Semiconductor ltr-e.pdf Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)
6+53.22 грн
10+ 38 грн
50+ 26.84 грн
100+ 20.78 грн
500+ 14.69 грн
1000+ 11.66 грн
Мінімальне замовлення: 6
R6009RND3TL1 R6009RND3TL1 Rohm Semiconductor r6009rnd3tl1-e.pdf Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+51.83 грн
Мінімальне замовлення: 2500
R6009RND3TL1 R6009RND3TL1 Rohm Semiconductor r6009rnd3tl1-e.pdf Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
3+113.29 грн
10+ 97.96 грн
25+ 92.43 грн
100+ 73.9 грн
250+ 69.39 грн
500+ 60.72 грн
1000+ 49.49 грн
Мінімальне замовлення: 3
UT6J3TCR UT6J3TCR Rohm Semiconductor Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
6+50.94 грн
10+ 42.54 грн
100+ 29.43 грн
500+ 23.08 грн
1000+ 19.64 грн
Мінімальне замовлення: 6
RF4P060BGTCR RF4P060BGTCR Rohm Semiconductor rf4p060bgtcr-e.pdf Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+23.95 грн
Мінімальне замовлення: 3000
RF4P060BGTCR RF4P060BGTCR Rohm Semiconductor rf4p060bgtcr-e.pdf Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
5+63.11 грн
10+ 52.57 грн
100+ 36.41 грн
500+ 28.55 грн
1000+ 24.3 грн
Мінімальне замовлення: 5
RF4P025ATTCR RF4P025ATTCR Rohm Semiconductor rf4p025attcr-e.pdf Description: PCH -100V -2.5A POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
товар відсутній
RF4P025ATTCR RF4P025ATTCR Rohm Semiconductor rf4p025attcr-e.pdf Description: PCH -100V -2.5A POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
на замовлення 2951 шт:
термін постачання 21-31 дні (днів)
5+60.82 грн
10+ 50.88 грн
100+ 35.19 грн
500+ 27.59 грн
1000+ 23.49 грн
Мінімальне замовлення: 5
BA2901YF-MGE2 BA2901YF-MGE2 Rohm Semiconductor datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товар відсутній
BA2901YF-MGE2 BA2901YF-MGE2 Rohm Semiconductor datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
3+135.33 грн
10+ 116.85 грн
25+ 110.2 грн
100+ 88.11 грн
250+ 82.74 грн
500+ 72.39 грн
1000+ 59 грн
Мінімальне замовлення: 3
ESR10EZPF4991 ESR10EZPF4991 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
товар відсутній
ESR10EZPF4991 ESR10EZPF4991 Rohm Semiconductor esr-e.pdf Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
20+15.21 грн
40+ 7.47 грн
59+ 5.01 грн
100+ 4.02 грн
500+ 2.88 грн
1000+ 2.54 грн
Мінімальне замовлення: 20
BH8100FV-E2 Rohm Semiconductor Description: CUSTOM; FOR MARSHALL & STYRKER O
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
KTR10EZPF5362 KTR10EZPF5362 Rohm Semiconductor ktr-e.pdf Description: RES SMD 53.6K OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
на замовлення 3505 шт:
термін постачання 21-31 дні (днів)
18+17.49 грн
35+ 8.49 грн
52+ 5.7 грн
100+ 4.56 грн
500+ 3.27 грн
1000+ 2.88 грн
Мінімальне замовлення: 18
DTC143EE3TL DTC143EE3TL Rohm Semiconductor dtc143ee3-e.pdf Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
DTC143EE3TL DTC143EE3TL Rohm Semiconductor dtc143ee3-e.pdf Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
13+25.09 грн
18+ 16.91 грн
100+ 8.54 грн
500+ 6.53 грн
1000+ 4.85 грн
Мінімальне замовлення: 13
BD65494MUV-E2 BD65494MUV-E2 Rohm Semiconductor datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
товар відсутній
BD65494MUV-E2 BD65494MUV-E2 Rohm Semiconductor datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
2+162.7 грн
10+ 140.94 грн
25+ 132.93 грн
100+ 106.29 грн
250+ 99.8 грн
500+ 87.33 грн
1000+ 71.17 грн
Мінімальне замовлення: 2
BD2801MUV-E2 BD2801MUV-E2 Rohm Semiconductor datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
товар відсутній
BD2801MUV-E2 BD2801MUV-E2 Rohm Semiconductor datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
3+113.29 грн
10+ 97.96 грн
25+ 92.43 грн
100+ 73.9 грн
250+ 69.39 грн
500+ 60.72 грн
1000+ 49.49 грн
Мінімальне замовлення: 3
LTR100JZPF4300 LTR100JZPF4300 Rohm Semiconductor ltr-e.pdf Description: RES 430 OHM 1% 2W 1225
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+12.45 грн
Мінімальне замовлення: 4000
LTR100JZPF4300 LTR100JZPF4300 Rohm Semiconductor ltr-e.pdf Description: RES 430 OHM 1% 2W 1225
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
6+53.22 грн
10+ 38 грн
50+ 26.84 грн
100+ 20.78 грн
500+ 14.69 грн
1000+ 11.66 грн
Мінімальне замовлення: 6
SFR03EZPF4300 SFR03EZPF4300 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+1.23 грн
Мінімальне замовлення: 5000
SFR03EZPF4300 SFR03EZPF4300 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
29+10.64 грн
33+ 9.08 грн
100+ 3.49 грн
1000+ 1.44 грн
2500+ 1.25 грн
Мінімальне замовлення: 29
ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
ESR18EZPF4300 ESR18EZPF4300 Rohm Semiconductor esr-e.pdf Description: RES SMD 430 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
SDR10EZPF4300 SDR10EZPF4300 Rohm Semiconductor Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
SIR-563ST3F Rohm Semiconductor datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
товар відсутній
SFR18EZPJ822 SFR18EZPJ822 Rohm Semiconductor sfr-e.pdf Description: RES 8.2K OHM 5% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 8.2 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+1.57 грн
Мінімальне замовлення: 5000
SFR18EZPJ822 SFR18EZPJ822 Rohm Semiconductor sfr-e.pdf Description: RES 8.2K OHM 5% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 8.2 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
23+13.69 грн
27+ 11.13 грн
100+ 4.34 грн
1000+ 1.7 грн
2500+ 1.56 грн
Мінімальне замовлення: 23
BH28MA3WHFV-TR BH28MA3WHFV-TR Rohm Semiconductor datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 2.8V 300MA 6HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
товар відсутній
BH28SA3WGUT-E2 BH28SA3WGUT-E2 Rohm Semiconductor Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
товар відсутній
R6035KNZC17 R6035KNZC17 Rohm Semiconductor datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
1+523.85 грн
10+ 432.26 грн
100+ 360.21 грн
R6030KNZC17 R6030KNZC17 Rohm Semiconductor datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+502.56 грн
10+ 414.76 грн
100+ 345.66 грн
R6030JNZC17 R6030JNZC17 Rohm Semiconductor datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+504.84 грн
10+ 416.3 грн
100+ 346.93 грн
R6077VNZC17 R6077VNZC17 Rohm Semiconductor datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
1+818.85 грн
30+ 638.18 грн
120+ 600.63 грн
R6515KNZC17 R6515KNZC17 Rohm Semiconductor datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+378.63 грн
10+ 327.12 грн
100+ 268.03 грн
R6530KNZC17 R6530KNZC17 Rohm Semiconductor datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+433.37 грн
10+ 357.87 грн
100+ 298.21 грн
R6535ENZC17 R6535ENZC17 Rohm Semiconductor datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+523.85 грн
10+ 432.26 грн
100+ 360.21 грн
R6530ENZC17 R6530ENZC17 Rohm Semiconductor datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+433.37 грн
10+ 357.87 грн
100+ 298.21 грн
R6524KNZC17 R6524KNZC17 Rohm Semiconductor datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+484.31 грн
10+ 419.15 грн
100+ 343.43 грн
SCT4036KEC11 SCT4036KEC11 Rohm Semiconductor datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4713 шт:
термін постачання 21-31 дні (днів)
1+1510.72 грн
30+ 1205.94 грн
120+ 1130.57 грн
510+ 905.38 грн
SCT4026DEHRC11 SCT4026DEHRC11 Rohm Semiconductor datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
1+1531.25 грн
30+ 1222.48 грн
120+ 1146.08 грн
SCT4036KEHRC11 SCT4036KEHRC11 Rohm Semiconductor datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Qualification: AEC-Q101
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
1+1555.58 грн
10+ 1331.4 грн
SCT4026DEC11 SCT4026DEC11 Rohm Semiconductor datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 4927 шт:
термін постачання 21-31 дні (днів)
1+1487.15 грн
30+ 1186.9 грн
120+ 1112.71 грн
510+ 891.08 грн
SCT4062KEHRC11 SCT4062KEHRC11 Rohm Semiconductor datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
1+1160.22 грн
10+ 791.37 грн
100+ 606.82 грн
2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товар відсутній
2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
8+38.02 грн
10+ 30.9 грн
100+ 21.48 грн
500+ 15.74 грн
Мінімальне замовлення: 8
BU33UC3WG-TR BUxxUC3WG.pdf
BU33UC3WG-TR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+13.97 грн
Мінімальне замовлення: 3000
BU33UC3WG-TR BUxxUC3WG.pdf
BU33UC3WG-TR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 300MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: On/Off
Part Status: Not For New Designs
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.22V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 3571 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+39.54 грн
10+ 32.58 грн
25+ 30.37 грн
100+ 22.81 грн
250+ 21.18 грн
500+ 17.92 грн
1000+ 13.62 грн
Мінімальне замовлення: 8
BU33SA4WGWL-E2 datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33SA4WGWL-E2
Виробник: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+14.32 грн
Мінімальне замовлення: 3000
BU33SA4WGWL-E2 datasheet?p=BU33SA4WGWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33SA4WGWL-E2
Виробник: Rohm Semiconductor
Description: IC REG LIN 3.3V 200MA 4UCSP50L1
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: UCSP50L1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB ~ 45dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 3555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+41.06 грн
10+ 33.68 грн
25+ 31.45 грн
100+ 23.61 грн
250+ 21.92 грн
500+ 18.55 грн
1000+ 14.1 грн
Мінімальне замовлення: 8
BU33JA2DG-CTR
BU33JA2DG-CTR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+27.63 грн
6000+ 25.28 грн
Мінімальне замовлення: 3000
BU33JA2DG-CTR
BU33JA2DG-CTR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature
на замовлення 10779 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+65.39 грн
10+ 56.08 грн
25+ 53.21 грн
100+ 41.02 грн
250+ 38.35 грн
500+ 33.89 грн
1000+ 26.31 грн
Мінімальне замовлення: 5
BU33JA2VG-CGTR datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA2VG-CGTR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
товар відсутній
BU33JA2VG-CGTR datasheet?p=BU33JA2VG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU33JA2VG-CGTR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 3.3V 200MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.155V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
на замовлення 2546 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+68.43 грн
10+ 58.86 грн
25+ 55.85 грн
100+ 43.05 грн
250+ 40.24 грн
500+ 35.56 грн
1000+ 27.62 грн
Мінімальне замовлення: 5
SFR03EZPJ101 sfr-e.pdf
SFR03EZPJ101
Виробник: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
товар відсутній
SFR03EZPJ101 sfr-e.pdf
SFR03EZPJ101
Виробник: Rohm Semiconductor
Description: RES 100 OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 100 Ohms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
37+8.36 грн
41+ 7.18 грн
106+ 2.77 грн
1000+ 1.14 грн
2500+ 0.99 грн
Мінімальне замовлення: 37
LTR100JZPF1R50 ltr-e.pdf
LTR100JZPF1R50
Виробник: Rohm Semiconductor
Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
товар відсутній
LTR100JZPF1R50 ltr-e.pdf
LTR100JZPF1R50
Виробник: Rohm Semiconductor
Description: RES 1.5 OHM 1% 2W WIDE 2512
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1.5 Ohms
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+53.22 грн
10+ 38 грн
50+ 26.84 грн
100+ 20.78 грн
500+ 14.69 грн
1000+ 11.66 грн
Мінімальне замовлення: 6
R6009RND3TL1 r6009rnd3tl1-e.pdf
R6009RND3TL1
Виробник: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+51.83 грн
Мінімальне замовлення: 2500
R6009RND3TL1 r6009rnd3tl1-e.pdf
R6009RND3TL1
Виробник: Rohm Semiconductor
Description: 600V 9A TO-252, PRESTOMOS WITH I
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 665mOhm @ 4.5A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 100 V
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+113.29 грн
10+ 97.96 грн
25+ 92.43 грн
100+ 73.9 грн
250+ 69.39 грн
500+ 60.72 грн
1000+ 49.49 грн
Мінімальне замовлення: 3
UT6J3TCR
UT6J3TCR
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 3A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+50.94 грн
10+ 42.54 грн
100+ 29.43 грн
500+ 23.08 грн
1000+ 19.64 грн
Мінімальне замовлення: 6
RF4P060BGTCR rf4p060bgtcr-e.pdf
RF4P060BGTCR
Виробник: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+23.95 грн
Мінімальне замовлення: 3000
RF4P060BGTCR rf4p060bgtcr-e.pdf
RF4P060BGTCR
Виробник: Rohm Semiconductor
Description: NCH 100V 6A, HUML2020L8, POWER M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+63.11 грн
10+ 52.57 грн
100+ 36.41 грн
500+ 28.55 грн
1000+ 24.3 грн
Мінімальне замовлення: 5
RF4P025ATTCR rf4p025attcr-e.pdf
RF4P025ATTCR
Виробник: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
товар відсутній
RF4P025ATTCR rf4p025attcr-e.pdf
RF4P025ATTCR
Виробник: Rohm Semiconductor
Description: PCH -100V -2.5A POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.5A, 10V
на замовлення 2951 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+60.82 грн
10+ 50.88 грн
100+ 35.19 грн
500+ 27.59 грн
1000+ 23.49 грн
Мінімальне замовлення: 5
BA2901YF-MGE2 datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2901YF-MGE2
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товар відсутній
BA2901YF-MGE2 datasheet?p=BA2901YF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BA2901YF-MGE2
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4 GEN PUR 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+135.33 грн
10+ 116.85 грн
25+ 110.2 грн
100+ 88.11 грн
250+ 82.74 грн
500+ 72.39 грн
1000+ 59 грн
Мінімальне замовлення: 3
ESR10EZPF4991 esr-e.pdf
ESR10EZPF4991
Виробник: Rohm Semiconductor
Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
товар відсутній
ESR10EZPF4991 esr-e.pdf
ESR10EZPF4991
Виробник: Rohm Semiconductor
Description: RES SMD 4.99K OHM 1% 0.4W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.99 kOhms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.21 грн
40+ 7.47 грн
59+ 5.01 грн
100+ 4.02 грн
500+ 2.88 грн
1000+ 2.54 грн
Мінімальне замовлення: 20
BH8100FV-E2
Виробник: Rohm Semiconductor
Description: CUSTOM; FOR MARSHALL & STYRKER O
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
KTR10EZPF5362 ktr-e.pdf
KTR10EZPF5362
Виробник: Rohm Semiconductor
Description: RES SMD 53.6K OHM 1% 1/8W 0805
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 53.6 kOhms
на замовлення 3505 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
18+17.49 грн
35+ 8.49 грн
52+ 5.7 грн
100+ 4.56 грн
500+ 3.27 грн
1000+ 2.88 грн
Мінімальне замовлення: 18
DTC143EE3TL dtc143ee3-e.pdf
DTC143EE3TL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
DTC143EE3TL dtc143ee3-e.pdf
DTC143EE3TL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 2790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+25.09 грн
18+ 16.91 грн
100+ 8.54 грн
500+ 6.53 грн
1000+ 4.85 грн
Мінімальне замовлення: 13
BD65494MUV-E2 datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65494MUV-E2
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
товар відсутній
BD65494MUV-E2 datasheet?p=BD65494MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65494MUV-E2
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 2.5V-3.6V 16VQFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -30°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.5V ~ 3.6V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2V ~ 9V
Supplier Device Package: VQFN016V3030
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+162.7 грн
10+ 140.94 грн
25+ 132.93 грн
100+ 106.29 грн
250+ 99.8 грн
500+ 87.33 грн
1000+ 71.17 грн
Мінімальне замовлення: 2
BD2801MUV-E2 datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2801MUV-E2
Виробник: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
товар відсутній
BD2801MUV-E2 datasheet?p=BD2801MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD2801MUV-E2
Виробник: Rohm Semiconductor
Description: 3CH BUILT-IN CHARGE PUMP LINEAR
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: DC DC Controller
Operating Temperature: 0°C ~ 70°C
Applications: General Purpose
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: VQFN016V3030
Part Status: Active
Voltage - Supply (Min): 3.135V
Voltage - Supply (Max): 3.465V
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+113.29 грн
10+ 97.96 грн
25+ 92.43 грн
100+ 73.9 грн
250+ 69.39 грн
500+ 60.72 грн
1000+ 49.49 грн
Мінімальне замовлення: 3
LTR100JZPF4300 ltr-e.pdf
LTR100JZPF4300
Виробник: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+12.45 грн
Мінімальне замовлення: 4000
LTR100JZPF4300 ltr-e.pdf
LTR100JZPF4300
Виробник: Rohm Semiconductor
Description: RES 430 OHM 1% 2W 1225
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+53.22 грн
10+ 38 грн
50+ 26.84 грн
100+ 20.78 грн
500+ 14.69 грн
1000+ 11.66 грн
Мінімальне замовлення: 6
SFR03EZPF4300 sfr-e.pdf
SFR03EZPF4300
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+1.23 грн
Мінімальне замовлення: 5000
SFR03EZPF4300 sfr-e.pdf
SFR03EZPF4300
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 430 Ohms
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
29+10.64 грн
33+ 9.08 грн
100+ 3.49 грн
1000+ 1.44 грн
2500+ 1.25 грн
Мінімальне замовлення: 29
ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Виробник: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
ESR18EZPF4300 esr-e.pdf
ESR18EZPF4300
Виробник: Rohm Semiconductor
Description: RES SMD 430 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
SDR10EZPF4300
SDR10EZPF4300
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
SDR10EZPF4300
SDR10EZPF4300
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 430 Ohms
товар відсутній
SIR-563ST3F datasheet?p=SIR-563ST3F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: INFRARED LIGHT EMITTING DIODES T
Packaging: Bulk
Package / Case: Radial
Wavelength: 940nm
Mounting Type: Through Hole
Type: Infrared (IR)
Orientation: Top View
Operating Temperature: -25°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.34V
Viewing Angle: 30°
Current - DC Forward (If) (Max): 100mA
Radiant Intensity (Ie) Min @ If: 8.2mW/sr @ 50mA
Part Status: Active
товар відсутній
SFR18EZPJ822 sfr-e.pdf
SFR18EZPJ822
Виробник: Rohm Semiconductor
Description: RES 8.2K OHM 5% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 8.2 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+1.57 грн
Мінімальне замовлення: 5000
SFR18EZPJ822 sfr-e.pdf
SFR18EZPJ822
Виробник: Rohm Semiconductor
Description: RES 8.2K OHM 5% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 8.2 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
23+13.69 грн
27+ 11.13 грн
100+ 4.34 грн
1000+ 1.7 грн
2500+ 1.56 грн
Мінімальне замовлення: 23
BH28MA3WHFV-TR datasheet?p=BH28MA3WHFV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH28MA3WHFV-TR
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.8V 300MA 6HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 60dB (1kHz)
Voltage Dropout (Max): 0.09V @ 100mA
Protection Features: Over Current, Over Temperature
товар відсутній
BH28SA3WGUT-E2
BH28SA3WGUT-E2
Виробник: Rohm Semiconductor
Description: IC REG LIN 2.8V 150MA VCSP60N1
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 72 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: VCSP60N1
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Part Status: Active
PSRR: 63dB (1kHz)
Voltage Dropout (Max): 0.15V @ 100mA
Protection Features: Over Current, Over Temperature
товар відсутній
R6035KNZC17 datasheet?p=R6035KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6035KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 35A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 282 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+523.85 грн
10+ 432.26 грн
100+ 360.21 грн
R6030KNZC17 datasheet?p=R6030KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+502.56 грн
10+ 414.76 грн
100+ 345.66 грн
R6030JNZC17 datasheet?p=R6030JNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6030JNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO3PF
Packaging: Bag
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 7V @ 5.5mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+504.84 грн
10+ 416.3 грн
100+ 346.93 грн
R6077VNZC17 datasheet?p=R6077VNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6077VNZC17
Виробник: Rohm Semiconductor
Description: 600V 29A TO-3PF, PRESTOMOS WITH
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 23A, 15V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1.9mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 100 V
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+818.85 грн
30+ 638.18 грн
120+ 600.63 грн
R6515KNZC17 datasheet?p=R6515KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6515KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 15A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+378.63 грн
10+ 327.12 грн
100+ 268.03 грн
R6530KNZC17 datasheet?p=R6530KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+433.37 грн
10+ 357.87 грн
100+ 298.21 грн
R6535ENZC17 datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+523.85 грн
10+ 432.26 грн
100+ 360.21 грн
R6530ENZC17 datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530ENZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+433.37 грн
10+ 357.87 грн
100+ 298.21 грн
R6524KNZC17 datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNZC17
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+484.31 грн
10+ 419.15 грн
100+ 343.43 грн
SCT4036KEC11 datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEC11
Виробник: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 4713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1510.72 грн
30+ 1205.94 грн
120+ 1130.57 грн
510+ 905.38 грн
SCT4026DEHRC11 datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEHRC11
Виробник: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Qualification: AEC-Q101
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1531.25 грн
30+ 1222.48 грн
120+ 1146.08 грн
SCT4036KEHRC11 datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEHRC11
Виробник: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Qualification: AEC-Q101
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1555.58 грн
10+ 1331.4 грн
SCT4026DEC11 datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEC11
Виробник: Rohm Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
на замовлення 4927 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1487.15 грн
30+ 1186.9 грн
120+ 1112.71 грн
510+ 891.08 грн
SCT4062KEHRC11 datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4062KEHRC11
Виробник: Rohm Semiconductor
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Qualification: AEC-Q101
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1160.22 грн
10+ 791.37 грн
100+ 606.82 грн
2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
товар відсутній
2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+38.02 грн
10+ 30.9 грн
100+ 21.48 грн
500+ 15.74 грн
Мінімальне замовлення: 8
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