Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99827) > Сторінка 917 з 1664
Фото | Назва | Виробник | Інформація |
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BD63001AMUV-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 30mA Interface: Logic Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6V ~ 28V Supplier Device Package: VQFN020V4040 Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
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BD63001AMUV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 30mA Interface: Logic Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 6V ~ 28V Supplier Device Package: VQFN020V4040 Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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R6535KNX3C16 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.3mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
на замовлення 162 шт: термін постачання 21-31 дні (днів) |
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R6524KNX3C16 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Power Dissipation (Max): 253W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
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R6524KNX3C16 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V Power Dissipation (Max): 253W (Tc) Vgs(th) (Max) @ Id: 5V @ 750µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
на замовлення 388 шт: термін постачання 21-31 дні (днів) |
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R6520KNX3C16 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 5V @ 630µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
на замовлення 949 шт: термін постачання 21-31 дні (днів) |
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R6006ANDTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
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SCMP13WBC8W1 A U | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Color: White Size / Dimension: 1.00mm L x 0.60mm W Mounting Type: Surface Mount Millicandela Rating: 150mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.9V Current - Test: 5mA Height (Max): 0.25mm Supplier Device Package: 2-SMD Part Status: Active Lens Style: Square with Flat Top Lens Size: 0.60mm |
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RB550VYM-30FHTR | Rohm Semiconductor |
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RB550VYM-30FHTR | Rohm Semiconductor |
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LF-3011MA | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-SMD, Gull Wing Color: Green Display Type: 7-Segment Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm) Number of Characters: 1 Millicandela Rating: 10mcd Common Pin: Common Anode Digit/Alpha Size: 0.32" (8.00mm) Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 10mA Wavelength - Peak: 563nm Power Dissipation (Max): 480mW |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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LF-3011MA | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 10-SMD, Gull Wing Color: Green Display Type: 7-Segment Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm) Number of Characters: 1 Millicandela Rating: 10mcd Common Pin: Common Anode Digit/Alpha Size: 0.32" (8.00mm) Voltage - Forward (Vf) (Typ): 2.1V Current - Test: 10mA Wavelength - Peak: 563nm Power Dissipation (Max): 480mW |
на замовлення 2972 шт: термін постачання 21-31 дні (днів) |
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BD9355MWV-E2 | Rohm Semiconductor |
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BD4933FVE-TR | Rohm Semiconductor |
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BD4933FVE-TR | Rohm Semiconductor |
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на замовлення 2935 шт: термін постачання 21-31 дні (днів) |
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BD49L33G-TL | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD49L33G-TL | Rohm Semiconductor |
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на замовлення 5980 шт: термін постачання 21-31 дні (днів) |
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1SS356VMFHTE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Resistance @ If, F: 900mOhm @ 2mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: UMD2 Part Status: Active Current - Max: 100 mA Grade: Automotive Qualification: AEC-Q101 |
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1SS356VMFHTE-17 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz Resistance @ If, F: 900mOhm @ 2mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: UMD2 Part Status: Active Current - Max: 100 mA Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2287 шт: термін постачання 21-31 дні (днів) |
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RBR15BGE40ATL | Rohm Semiconductor |
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RBR15BGE40ATL | Rohm Semiconductor |
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на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE60ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
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RBR10BGE60ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
на замовлення 2287 шт: термін постачання 21-31 дні (днів) |
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RBR20BGE40ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 360 µA @ 40 V |
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RBR20BGE40ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 360 µA @ 40 V |
на замовлення 2402 шт: термін постачання 21-31 дні (днів) |
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RBR15BGE30ATL | Rohm Semiconductor |
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на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RBR15BGE30ATL | Rohm Semiconductor |
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на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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RBR15BGE60ATL | Rohm Semiconductor |
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RBR15BGE60ATL | Rohm Semiconductor |
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на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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RBQ10BGE45ATL | Rohm Semiconductor |
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RBQ10BGE45ATL | Rohm Semiconductor |
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на замовлення 1096 шт: термін постачання 21-31 дні (днів) |
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RBQ20BGE45ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
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RBQ20BGE45ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 2329 шт: термін постачання 21-31 дні (днів) |
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RBQ10BGE65ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
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RBQ10BGE65ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Current - Reverse Leakage @ Vr: 70 µA @ 65 V |
на замовлення 201 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE30ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RBR10BGE30ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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RBQ15BGE65ATL | Rohm Semiconductor |
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RBQ15BGE65ATL | Rohm Semiconductor |
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на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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RBQ15BGE45ATL | Rohm Semiconductor |
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на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RBQ15BGE45ATL | Rohm Semiconductor |
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на замовлення 2589 шт: термін постачання 21-31 дні (днів) |
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RFN6BGE2DTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RFN6BGE2DTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RF601BGE2DTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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RF601BGE2DTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2424 шт: термін постачання 21-31 дні (днів) |
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RB088BGE-40TL | Rohm Semiconductor |
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RB088BGE-40TL | Rohm Semiconductor |
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RB098BGE-40TL | Rohm Semiconductor |
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RB098BGE-40TL | Rohm Semiconductor |
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RB085BGE-90TL | Rohm Semiconductor |
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RB085BGE-90TL | Rohm Semiconductor |
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RBR20BGE30ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
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RBR20BGE30ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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RB088BGE-30TL | Rohm Semiconductor |
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RB088BGE-30TL | Rohm Semiconductor |
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RBQ20BGE65ATL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 65 V |
товар відсутній |
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RBQ20BGE65ATL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 65 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 65 V |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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RBR20BGE60ATL | Rohm Semiconductor |
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товар відсутній |
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RBR20BGE60ATL | Rohm Semiconductor |
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товар відсутній |
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RB098BGE-60TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD63001AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 30mA
Interface: Logic
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6V ~ 28V
Supplier Device Package: VQFN020V4040
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 30mA
Interface: Logic
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6V ~ 28V
Supplier Device Package: VQFN020V4040
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товар відсутній
BD63001AMUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 30mA
Interface: Logic
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6V ~ 28V
Supplier Device Package: VQFN020V4040
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 4.5V-5.5V 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 30mA
Interface: Logic
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6V ~ 28V
Supplier Device Package: VQFN020V4040
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 190.84 грн |
10+ | 165.02 грн |
25+ | 155.68 грн |
100+ | 124.48 грн |
250+ | 116.88 грн |
500+ | 102.27 грн |
1000+ | 83.35 грн |
R6535KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 35A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.3mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: 650V 35A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.3mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 162 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 462.26 грн |
10+ | 381.52 грн |
100+ | 317.93 грн |
R6524KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
товар відсутній
R6524KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Description: 650V 24A, TO-220AB, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 253W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
на замовлення 388 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 345.94 грн |
10+ | 299.52 грн |
100+ | 245.4 грн |
R6520KNX3C16 |
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Виробник: Rohm Semiconductor
Description: 650V 20A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 630µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Description: 650V 20A, TO-220AB, HIGH-SPEED S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @9.5A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 630µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 949 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 309.44 грн |
50+ | 236.56 грн |
100+ | 202.77 грн |
500+ | 169.14 грн |
R6006ANDTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 6A CPT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Description: MOSFET N-CH 600V 6A CPT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
товар відсутній
SCMP13WBC8W1 A U |
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Виробник: Rohm Semiconductor
Description: LED WHITE 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Color: White
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 150mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 0.25mm
Supplier Device Package: 2-SMD
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
Description: LED WHITE 2SMD
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Color: White
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 150mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 0.25mm
Supplier Device Package: 2-SMD
Part Status: Active
Lens Style: Square with Flat Top
Lens Size: 0.60mm
товар відсутній
RB550VYM-30FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
товар відсутній
RB550VYM-30FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2M
Description: DIODE SCHOTTKY 30V 1A TUMD2M
товар відсутній
LF-3011MA |
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Виробник: Rohm Semiconductor
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, Gull Wing
Color: Green
Display Type: 7-Segment
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Number of Characters: 1
Millicandela Rating: 10mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.32" (8.00mm)
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 10mA
Wavelength - Peak: 563nm
Power Dissipation (Max): 480mW
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, Gull Wing
Color: Green
Display Type: 7-Segment
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Number of Characters: 1
Millicandela Rating: 10mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.32" (8.00mm)
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 10mA
Wavelength - Peak: 563nm
Power Dissipation (Max): 480mW
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 173.49 грн |
2000+ | 160.16 грн |
LF-3011MA |
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Виробник: Rohm Semiconductor
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, Gull Wing
Color: Green
Display Type: 7-Segment
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Number of Characters: 1
Millicandela Rating: 10mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.32" (8.00mm)
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 10mA
Wavelength - Peak: 563nm
Power Dissipation (Max): 480mW
Description: DISPLAY 7SEG 0.32" SGL GRN 10SMD
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, Gull Wing
Color: Green
Display Type: 7-Segment
Size / Dimension: 0.433" H x 0.268" W x 0.197" D (11.00mm x 6.80mm x 5.00mm)
Number of Characters: 1
Millicandela Rating: 10mcd
Common Pin: Common Anode
Digit/Alpha Size: 0.32" (8.00mm)
Voltage - Forward (Vf) (Typ): 2.1V
Current - Test: 10mA
Wavelength - Peak: 563nm
Power Dissipation (Max): 480mW
на замовлення 2972 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 387.75 грн |
10+ | 263.79 грн |
100+ | 216.05 грн |
500+ | 170.93 грн |
BD4933FVE-TR |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
Description: IC SUPERVISOR 1 CHANNEL 5VSOF
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)BD49L33G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)BD49L33G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 5980 шт:
термін постачання 21-31 дні (днів)1SS356VMFHTE-17 |
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Виробник: Rohm Semiconductor
Description: 35V 1.2PF, UMD2, LOW RF BAND SWI
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Part Status: Active
Current - Max: 100 mA
Grade: Automotive
Qualification: AEC-Q101
Description: 35V 1.2PF, UMD2, LOW RF BAND SWI
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Part Status: Active
Current - Max: 100 mA
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1SS356VMFHTE-17 |
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Виробник: Rohm Semiconductor
Description: 35V 1.2PF, UMD2, LOW RF BAND SWI
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Part Status: Active
Current - Max: 100 mA
Grade: Automotive
Qualification: AEC-Q101
Description: 35V 1.2PF, UMD2, LOW RF BAND SWI
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 6V, 1MHz
Resistance @ If, F: 900mOhm @ 2mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: UMD2
Part Status: Active
Current - Max: 100 mA
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2287 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
14+ | 22.11 грн |
100+ | 13.27 грн |
500+ | 11.53 грн |
1000+ | 7.84 грн |
RBR15BGE40ATL |
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Виробник: Rohm Semiconductor
Description: 40V, 15A, TO-252, CATHODE COMMON
Description: 40V, 15A, TO-252, CATHODE COMMON
товар відсутній
RBR15BGE40ATL |
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Виробник: Rohm Semiconductor
Description: 40V, 15A, TO-252, CATHODE COMMON
Description: 40V, 15A, TO-252, CATHODE COMMON
на замовлення 75 шт:
термін постачання 21-31 дні (днів)RBR10BGE60ATL |
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Виробник: Rohm Semiconductor
Description: 60V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: 60V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
товар відсутній
RBR10BGE60ATL |
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Виробник: Rohm Semiconductor
Description: 60V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: 60V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
на замовлення 2287 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.92 грн |
10+ | 89.91 грн |
100+ | 70.09 грн |
500+ | 54.33 грн |
1000+ | 42.9 грн |
RBR20BGE40ATL |
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Виробник: Rohm Semiconductor
Description: 40V, 20A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
Description: 40V, 20A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
товар відсутній
RBR20BGE40ATL |
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Виробник: Rohm Semiconductor
Description: 40V, 20A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
Description: 40V, 20A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 360 µA @ 40 V
на замовлення 2402 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 155.1 грн |
10+ | 133.84 грн |
100+ | 107.57 грн |
500+ | 82.95 грн |
1000+ | 69.03 грн |
RBR15BGE30ATL |
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Виробник: Rohm Semiconductor
Description: 30V, 15A, TO-252, CATHODE COMMON
Description: 30V, 15A, TO-252, CATHODE COMMON
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 55.85 грн |
RBR15BGE30ATL |
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Виробник: Rohm Semiconductor
Description: 30V, 15A, TO-252, CATHODE COMMON
Description: 30V, 15A, TO-252, CATHODE COMMON
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 120.89 грн |
10+ | 104.48 грн |
100+ | 84.01 грн |
500+ | 64.77 грн |
1000+ | 53.67 грн |
RBR15BGE60ATL |
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Виробник: Rohm Semiconductor
Description: 60V, 15A, TO-252, CATHODE COMMON
Description: 60V, 15A, TO-252, CATHODE COMMON
товар відсутній
RBR15BGE60ATL |
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Виробник: Rohm Semiconductor
Description: 60V, 15A, TO-252, CATHODE COMMON
Description: 60V, 15A, TO-252, CATHODE COMMON
на замовлення 80 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 120.89 грн |
10+ | 104.48 грн |
RBQ10BGE45ATL |
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Виробник: Rohm Semiconductor
Description: 65V, 10A, TO-252, CATHODE COMMON
Description: 65V, 10A, TO-252, CATHODE COMMON
товар відсутній
RBQ10BGE45ATL |
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Виробник: Rohm Semiconductor
Description: 65V, 10A, TO-252, CATHODE COMMON
Description: 65V, 10A, TO-252, CATHODE COMMON
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 101.12 грн |
10+ | 86.98 грн |
100+ | 67.86 грн |
500+ | 52.61 грн |
1000+ | 41.53 грн |
RBQ20BGE45ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товар відсутній
RBQ20BGE45ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 20A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 2329 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 145.98 грн |
10+ | 116.92 грн |
100+ | 93.08 грн |
500+ | 73.91 грн |
1000+ | 62.71 грн |
RBQ10BGE65ATL |
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Виробник: Rohm Semiconductor
Description: 65V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: 65V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
товар відсутній
RBQ10BGE65ATL |
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Виробник: Rohm Semiconductor
Description: 65V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
Description: 65V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Current - Reverse Leakage @ Vr: 70 µA @ 65 V
на замовлення 201 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 103.4 грн |
10+ | 88.81 грн |
100+ | 69.28 грн |
RBR10BGE30ATL |
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Виробник: Rohm Semiconductor
Description: 30V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: 30V, 10A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 46.08 грн |
RBR10BGE30ATL |
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Виробник: Rohm Semiconductor
Description: 30V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: 30V, 10A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.92 грн |
10+ | 89.91 грн |
100+ | 70.09 грн |
500+ | 54.33 грн |
1000+ | 42.9 грн |
RBQ15BGE65ATL |
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Виробник: Rohm Semiconductor
Description: 65V, 15A, TO-252, CATHODE COMMON
Description: 65V, 15A, TO-252, CATHODE COMMON
товар відсутній
RBQ15BGE65ATL |
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Виробник: Rohm Semiconductor
Description: 65V, 15A, TO-252, CATHODE COMMON
Description: 65V, 15A, TO-252, CATHODE COMMON
на замовлення 100 шт:
термін постачання 21-31 дні (днів)RBQ15BGE45ATL |
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Виробник: Rohm Semiconductor
Description: 45V, 15A, TO-252, CATHODE COMMON
Description: 45V, 15A, TO-252, CATHODE COMMON
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)RBQ15BGE45ATL |
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Виробник: Rohm Semiconductor
Description: 45V, 15A, TO-252, CATHODE COMMON
Description: 45V, 15A, TO-252, CATHODE COMMON
на замовлення 2589 шт:
термін постачання 21-31 дні (днів)RFN6BGE2DTL |
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Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: SUPER FAST RECOVERY DIODE. RFN6B
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 42.24 грн |
RFN6BGE2DTL |
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Виробник: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: SUPER FAST RECOVERY DIODE. RFN6B
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 101.88 грн |
10+ | 80.46 грн |
100+ | 62.58 грн |
500+ | 49.78 грн |
1000+ | 40.55 грн |
RF601BGE2DTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
RF601BGE2DTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 3A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2424 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 103.4 грн |
10+ | 81.41 грн |
100+ | 63.37 грн |
500+ | 50.4 грн |
1000+ | 41.06 грн |
RB088BGE-40TL |
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Виробник: Rohm Semiconductor
Description: 40V, 10A, TO-252, CATHODE COMMON
Description: 40V, 10A, TO-252, CATHODE COMMON
товар відсутній
RB088BGE-40TL |
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Виробник: Rohm Semiconductor
Description: 40V, 10A, TO-252, CATHODE COMMON
Description: 40V, 10A, TO-252, CATHODE COMMON
товар відсутній
RB098BGE-40TL |
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Виробник: Rohm Semiconductor
Description: SUPER LOW IR TYPE SCHOTTKY BARRI
Description: SUPER LOW IR TYPE SCHOTTKY BARRI
товар відсутній
RB098BGE-40TL |
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Виробник: Rohm Semiconductor
Description: SUPER LOW IR TYPE SCHOTTKY BARRI
Description: SUPER LOW IR TYPE SCHOTTKY BARRI
товар відсутній
RB085BGE-90TL |
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Виробник: Rohm Semiconductor
Description: 90V, 10A, TO-252, CATHODE COMMON
Description: 90V, 10A, TO-252, CATHODE COMMON
товар відсутній
RB085BGE-90TL |
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Виробник: Rohm Semiconductor
Description: 90V, 10A, TO-252, CATHODE COMMON
Description: 90V, 10A, TO-252, CATHODE COMMON
товар відсутній
RBR20BGE30ATL |
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Виробник: Rohm Semiconductor
Description: 30V, 20A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: 30V, 20A, TO-252, CATHODE COMMON
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
товар відсутній
RBR20BGE30ATL |
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Виробник: Rohm Semiconductor
Description: 30V, 20A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: 30V, 20A, TO-252, CATHODE COMMON
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 155.1 грн |
10+ | 133.84 грн |
100+ | 107.57 грн |
500+ | 82.95 грн |
1000+ | 69.03 грн |
RB088BGE-30TL |
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Виробник: Rohm Semiconductor
Description: 30V, 10A, TO-252, CATHODE COMMON
Description: 30V, 10A, TO-252, CATHODE COMMON
товар відсутній
RB088BGE-30TL |
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Виробник: Rohm Semiconductor
Description: 30V, 10A, TO-252, CATHODE COMMON
Description: 30V, 10A, TO-252, CATHODE COMMON
товар відсутній
RBQ20BGE65ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 20A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 20A TO252GE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
товар відсутній
RBQ20BGE65ATL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 65V 20A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
Description: DIODE ARR SCHOTT 65V 20A TO252GE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 65 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 65 V
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 145.98 грн |
10+ | 116.92 грн |
100+ | 93.08 грн |
500+ | 73.91 грн |
1000+ | 62.71 грн |
RBR20BGE60ATL |
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Виробник: Rohm Semiconductor
Description: 60V, 20A, TO-252, CATHODE COMMON
Description: 60V, 20A, TO-252, CATHODE COMMON
товар відсутній
RBR20BGE60ATL |
![]() |
Виробник: Rohm Semiconductor
Description: 60V, 20A, TO-252, CATHODE COMMON
Description: 60V, 20A, TO-252, CATHODE COMMON
товар відсутній
RB098BGE-60TL |
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Виробник: Rohm Semiconductor
Description: SUPER LOW IR TYPE SCHOTTKY BARRI
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
Description: SUPER LOW IR TYPE SCHOTTKY BARRI
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252GE
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 50.67 грн |