Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99812) > Сторінка 888 з 1664
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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BU7205HFV-TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-665 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 400nA Slew Rate: 0.0025V/µs Gain Bandwidth Product: 2.5 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: 5-HVSOF Number of Circuits: 1 Current - Output / Channel: 2 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
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BU7205HFV-TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-665 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 400nA Slew Rate: 0.0025V/µs Gain Bandwidth Product: 2.5 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: 5-HVSOF Number of Circuits: 1 Current - Output / Channel: 2 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1634 шт: термін постачання 21-31 дні (днів) |
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DTC115ECAHZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Power - Max: 350 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms Qualification: AEC-Q101 |
на замовлення 4894 шт: термін постачання 21-31 дні (днів) |
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RV8L002SNHZGG2CR | Rohm Semiconductor |
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на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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BSS84XHZGG2CR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: DFN1010-3W Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RV8C010UNHZGG2CR | Rohm Semiconductor |
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RQ6L035ATTCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V |
на замовлення 5439 шт: термін постачання 21-31 дні (днів) |
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2SA1514KT146R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
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2SA1514KT146R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
на замовлення 1231 шт: термін постачання 21-31 дні (днів) |
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RB540SM-40FHT2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA Current - Reverse Leakage @ Vr: 15 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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RB540SM-40FHT2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA Current - Reverse Leakage @ Vr: 15 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6759 шт: термін постачання 21-31 дні (днів) |
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RB540VM-30TE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
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BD6995FV-GE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.2A Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.3V ~ 17V Applications: General Purpose Technology: Bi-CMOS Supplier Device Package: 16-SSOP-B Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
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BD6995FV-GE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.2A Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.3V ~ 17V Applications: General Purpose Technology: Bi-CMOS Supplier Device Package: 16-SSOP-B Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
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BD6994FV-GE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.2A Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 17V Applications: Fan Motor Driver Technology: Bi-CMOS Voltage - Load: 4.5V ~ 17V Supplier Device Package: 16-SSOP-B Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
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RQ5C020TPTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
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RQ5C020TPTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
на замовлення 3446 шт: термін постачання 21-31 дні (днів) |
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BU30JA2MNVX-CTL | Rohm Semiconductor |
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QS6K21FRATR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 950mW (Ta) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BU4053BCF-E2 | Rohm Semiconductor |
Description: IC SW SPDT-NO/NCX3 160OHM 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm Supplier Device Package: 16-SOP Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: SPDT - NO/NC Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 4Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 300nA Part Status: Not For New Designs Number of Circuits: 3 |
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US6M2GTR | Rohm Semiconductor |
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US6M2GTR | Rohm Semiconductor |
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на замовлення 994 шт: термін постачання 21-31 дні (днів) |
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EDZVFHT2R11B | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.09% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Grade: Automotive Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
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EDZVFHT2R11B | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Tolerance: ±2.09% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Grade: Automotive Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V Qualification: AEC-Q101 |
на замовлення 7586 шт: термін постачання 21-31 дні (днів) |
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RB548WMFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD3F Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V Qualification: AEC-Q101 |
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2SCR502U3T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 360MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
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2SCR502U3T106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 360MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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RBQ30TB45BNZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-220FN-2 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 30 A Current - Reverse Leakage @ Vr: 350 µA @ 45 V |
на замовлення 1253 шт: термін постачання 21-31 дні (днів) |
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BU45K452G-TL | Rohm Semiconductor |
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на замовлення 4241 шт: термін постачання 21-31 дні (днів) |
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BU45K442G-TL | Rohm Semiconductor |
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на замовлення 2780 шт: термін постачання 21-31 дні (днів) |
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BU45L232G-TL | Rohm Semiconductor |
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на замовлення 1498 шт: термін постачання 21-31 дні (днів) |
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BU45K472G-TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 120ms Minimum Voltage - Threshold: 4.7V Supplier Device Package: 3-SSOP Part Status: Not For New Designs |
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2SAR562F3TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
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2SAR562F3TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 180MHz Supplier Device Package: HUML2020L3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
на замовлення 2565 шт: термін постачання 21-31 дні (днів) |
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R6020JNXC7G | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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R6020JNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Power Dissipation (Max): 252W (Tc) Vgs(th) (Max) @ Id: 7V @ 3.5mA Supplier Device Package: TO-247G Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 355 шт: термін постачання 21-31 дні (днів) |
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SCS310AHGC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 500pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220ACP Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 377 шт: термін постачання 21-31 дні (днів) |
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SCS310APC9 | Rohm Semiconductor |
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на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MMBZ30VALFHT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 38pF @ 1MHz Current - Peak Pulse (10/1000µs): 950mA Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 43V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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MMBZ30VALFHT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 38pF @ 1MHz Current - Peak Pulse (10/1000µs): 950mA Voltage - Reverse Standoff (Typ): 24V (Max) Supplier Device Package: SSD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 43V Power - Peak Pulse: 40W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17758 шт: термін постачання 21-31 дні (днів) |
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SCS210KGHRC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
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SCS210KE2HRC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 20 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 400 µA @ 600 V Qualification: AEC-Q101 |
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SCS215KGHRC | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 790pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V Qualification: AEC-Q101 |
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BM2P095F-GE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600µA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 65kHz Voltage - Input (Max): 26V Topology: Flyback Supplier Device Package: 8-SOP Synchronous Rectifier: No Voltage - Output (Max): 26V Voltage - Input (Min): 8.9V Voltage - Output (Min/Fixed): 1.25V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BU52073GWZ-E2 | Rohm Semiconductor |
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BU52073GWZ-E2 | Rohm Semiconductor |
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на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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RSX201VYM30FHTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1.5A Supplier Device Package: TUMD2M Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V Qualification: AEC-Q101 |
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2SB1424T100R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Frequency - Transition: 240MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 500 mW |
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2SB1424T100R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Frequency - Transition: 240MHz Supplier Device Package: MPT3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 500 mW |
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SMF26VTR | Rohm Semiconductor |
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товар відсутній |
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SMF26VTR | Rohm Semiconductor |
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на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BM81810MUF-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.6V ~ 5.5V Applications: TFT-LCD Panels Supplier Device Package: VQFN32FBV050 Grade: Automotive Qualification: AEC-Q100 |
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SP8K3TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
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RF2001T3DNZC9 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
на замовлення 1876 шт: термін постачання 21-31 дні (днів) |
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DTC143XEBHZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
товар відсутній |
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DTC143XEBHZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 |
на замовлення 59 шт: термін постачання 21-31 дні (днів) |
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DTC143XEBMGTL | Rohm Semiconductor | Description: TRANS NPN 100MA 50V SC-89 |
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RQ5C035BCTCL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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DTC115ECAT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC115ECAT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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BU7205HFV-TR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 1 CIRCUIT 5HVSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400nA
Slew Rate: 0.0025V/µs
Gain Bandwidth Product: 2.5 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 5-HVSOF
Number of Circuits: 1
Current - Output / Channel: 2 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 5HVSOF
Packaging: Tape & Reel (TR)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400nA
Slew Rate: 0.0025V/µs
Gain Bandwidth Product: 2.5 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 5-HVSOF
Number of Circuits: 1
Current - Output / Channel: 2 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
товар відсутній
BU7205HFV-TR |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 1 CIRCUIT 5HVSOF
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400nA
Slew Rate: 0.0025V/µs
Gain Bandwidth Product: 2.5 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 5-HVSOF
Number of Circuits: 1
Current - Output / Channel: 2 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 5HVSOF
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 400nA
Slew Rate: 0.0025V/µs
Gain Bandwidth Product: 2.5 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 5-HVSOF
Number of Circuits: 1
Current - Output / Channel: 2 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1634 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 98.08 грн |
10+ | 84.56 грн |
25+ | 80.27 грн |
100+ | 61.89 грн |
250+ | 57.85 грн |
500+ | 51.12 грн |
1000+ | 39.7 грн |
DTC115ECAHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 350 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 13.69 грн |
32+ | 9.15 грн |
100+ | 4.47 грн |
500+ | 3.49 грн |
1000+ | 2.43 грн |
RV8L002SNHZGG2CR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA DFN1010-3W
Description: MOSFET N-CH 60V 250MA DFN1010-3W
на замовлення 70 шт:
термін постачання 21-31 дні (днів)BSS84XHZGG2CR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 60V 230MA DFN1010-3W
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DFN1010-3W
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 230MA DFN1010-3W
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DFN1010-3W
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 39.54 грн |
10+ | 32.36 грн |
100+ | 22.46 грн |
500+ | 16.46 грн |
1000+ | 13.38 грн |
2000+ | 11.96 грн |
RV8C010UNHZGG2CR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 1A DFN1010-3W
Description: MOSFET N-CH 20V 1A DFN1010-3W
товар відсутній
RQ6L035ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -60V -3.5A POWER MOSFET - RQ
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
Description: PCH -60V -3.5A POWER MOSFET - RQ
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
на замовлення 5439 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.87 грн |
10+ | 52.86 грн |
100+ | 36.59 грн |
500+ | 28.69 грн |
1000+ | 24.41 грн |
2SA1514KT146R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
товар відсутній
2SA1514KT146R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
на замовлення 1231 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.53 грн |
19+ | 15.52 грн |
100+ | 9.29 грн |
500+ | 8.07 грн |
1000+ | 5.69 грн |
RB540SM-40FHT2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RB540SM-40FHT2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6759 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.45 грн |
32+ | 9.37 грн |
100+ | 4.55 грн |
500+ | 3.56 грн |
1000+ | 2.47 грн |
2000+ | 2.15 грн |
RB540VM-30TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
товар відсутній
BD6995FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: General Purpose
Technology: Bi-CMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: General Purpose
Technology: Bi-CMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товар відсутній
BD6995FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: General Purpose
Technology: Bi-CMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 16SSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: General Purpose
Technology: Bi-CMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.96 грн |
10+ | 93.06 грн |
25+ | 88.36 грн |
100+ | 68.1 грн |
250+ | 63.66 грн |
500+ | 56.26 грн |
1000+ | 43.69 грн |
BD6994FV-GE2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.5V-17V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 17V
Applications: Fan Motor Driver
Technology: Bi-CMOS
Voltage - Load: 4.5V ~ 17V
Supplier Device Package: 16-SSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 4.5V-17V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 17V
Applications: Fan Motor Driver
Technology: Bi-CMOS
Voltage - Load: 4.5V ~ 17V
Supplier Device Package: 16-SSOP-B
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
товар відсутній
RQ5C020TPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
товар відсутній
RQ5C020TPTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET P-CH 20V 2A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 3446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 37.25 грн |
10+ | 30.75 грн |
100+ | 21.33 грн |
500+ | 15.63 грн |
1000+ | 12.71 грн |
BU30JA2MNVX-CTL |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3V 200MA SSON004R1010
Description: IC REG LIN 3V 200MA SSON004R1010
товар відсутній
QS6K21FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 950mW (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 950mW (Ta)
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 17.86 грн |
6000+ | 16.29 грн |
BU4053BCF-E2 |
Виробник: Rohm Semiconductor
Description: IC SW SPDT-NO/NCX3 160OHM 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 16-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Not For New Designs
Number of Circuits: 3
Description: IC SW SPDT-NO/NCX3 160OHM 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 16-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 300nA
Part Status: Not For New Designs
Number of Circuits: 3
товар відсутній
US6M2GTR |
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Виробник: Rohm Semiconductor
Description: 2.5V DRIVE NCH+PCH MOSFET, 6 PIN
Description: 2.5V DRIVE NCH+PCH MOSFET, 6 PIN
на замовлення 994 шт:
термін постачання 21-31 дні (днів)EDZVFHT2R11B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 11V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2.09%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 11V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2.09%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
товар відсутній
EDZVFHT2R11B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 11V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2.09%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Description: DIODE ZENER 11V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2.09%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Grade: Automotive
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
на замовлення 7586 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 22.81 грн |
20+ | 15.23 грн |
100+ | 7.42 грн |
500+ | 5.8 грн |
1000+ | 4.03 грн |
2000+ | 3.5 грн |
RB548WMFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 100MA EMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 30V 100MA EMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Qualification: AEC-Q101
товар відсутній
2SCR502U3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
товар відсутній
2SCR502U3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 70 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.93 грн |
13+ | 22.99 грн |
RBQ30TB45BNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 45V 30A TO220FN-2
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FN-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Description: DIODE SCHOTTKY 45V 30A TO220FN-2
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FN-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
на замовлення 1253 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.92 грн |
50+ | 80.74 грн |
100+ | 66.44 грн |
500+ | 56.29 грн |
BU45K452G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 4241 шт:
термін постачання 21-31 дні (днів)BU45K442G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 2780 шт:
термін постачання 21-31 дні (днів)BU45L232G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 1498 шт:
термін постачання 21-31 дні (днів)BU45K472G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 4.7V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 4.7V
Supplier Device Package: 3-SSOP
Part Status: Not For New Designs
товар відсутній
2SAR562F3TR |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 6A HUML2020L3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
товар відсутній
2SAR562F3TR |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 6A HUML2020L3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: HUML2020L3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
на замовлення 2565 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 57.02 грн |
10+ | 47.52 грн |
100+ | 32.92 грн |
500+ | 25.81 грн |
1000+ | 21.97 грн |
R6020JNXC7G |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 135.33 грн |
50+ | 104.58 грн |
100+ | 86.04 грн |
500+ | 72.91 грн |
R6020JNZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 252W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Power Dissipation (Max): 252W (Tc)
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Supplier Device Package: TO-247G
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 355 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 194.64 грн |
30+ | 148.14 грн |
120+ | 126.98 грн |
SCS310AHGC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 500pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 377 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.05 грн |
50+ | 101.8 грн |
100+ | 87.25 грн |
SCS310APC9 |
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Виробник: Rohm Semiconductor
Description: DIODE SC SCHKY 650V 10A TO220ACP
Description: DIODE SC SCHKY 650V 10A TO220ACP
на замовлення 2 шт:
термін постачання 21-31 дні (днів)MMBZ30VALFHT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 43VC SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.89 грн |
6000+ | 2.58 грн |
9000+ | 2.14 грн |
MMBZ30VALFHT116 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 43VC SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17758 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.49 грн |
26+ | 11.35 грн |
100+ | 5.54 грн |
500+ | 4.34 грн |
1000+ | 3.01 грн |
SCS210KGHRC |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
товар відсутній
SCS210KE2HRC |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 20
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE ARR SIC SCHOT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 20
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
SCS215KGHRC |
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Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 790pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 790pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Qualification: AEC-Q101
товар відсутній
BM2P095F-GE2 |
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Виробник: Rohm Semiconductor
Description: THE PWM TYPE DC/DC CONVERTER BM2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 26V
Topology: Flyback
Supplier Device Package: 8-SOP
Synchronous Rectifier: No
Voltage - Output (Max): 26V
Voltage - Input (Min): 8.9V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
Description: THE PWM TYPE DC/DC CONVERTER BM2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 26V
Topology: Flyback
Supplier Device Package: 8-SOP
Synchronous Rectifier: No
Voltage - Output (Max): 26V
Voltage - Input (Min): 8.9V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 65.69 грн |
BU52073GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: OMNIPOLAR DETECTION HALL IC WITH
Description: OMNIPOLAR DETECTION HALL IC WITH
товар відсутній
BU52073GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: OMNIPOLAR DETECTION HALL IC WITH
Description: OMNIPOLAR DETECTION HALL IC WITH
на замовлення 125 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.46 грн |
7+ | 48.18 грн |
10+ | 41.95 грн |
25+ | 34.55 грн |
50+ | 28.71 грн |
100+ | 24.46 грн |
RSX201VYM30FHTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1.5A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 1.5A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Qualification: AEC-Q101
товар відсутній
2SB1424T100R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Description: TRANS PNP 20V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
товар відсутній
2SB1424T100R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
Description: TRANS PNP 20V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Frequency - Transition: 240MHz
Supplier Device Package: MPT3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
товар відсутній
SMF26VTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 26VWM 42.1VC PMDU
Description: TVS DIODE 26VWM 42.1VC PMDU
на замовлення 3 шт:
термін постачання 21-31 дні (днів)BM81810MUF-ME2 |
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Виробник: Rohm Semiconductor
Description: BM81810MUF-M IS A POWER MANAGEME
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.6V ~ 5.5V
Applications: TFT-LCD Panels
Supplier Device Package: VQFN32FBV050
Grade: Automotive
Qualification: AEC-Q100
Description: BM81810MUF-M IS A POWER MANAGEME
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.6V ~ 5.5V
Applications: TFT-LCD Panels
Supplier Device Package: VQFN32FBV050
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
SP8K3TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
товар відсутній
RF2001T3DNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 300V 20A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE ARRAY GP 300V 20A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1876 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.03 грн |
50+ | 59.04 грн |
100+ | 48.58 грн |
500+ | 41.17 грн |
DTC143XEBHZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
товар відсутній
DTC143XEBHZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
на замовлення 59 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.97 грн |
28+ | 10.47 грн |
RQ5C035BCTCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 3.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Description: MOSFET P-CHANNEL 20V 3.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 12.35 грн |
6000+ | 11.28 грн |
9000+ | 10.48 грн |
DTC115ECAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.59 грн |
DTC115ECAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 19.01 грн |
24+ | 12.3 грн |
100+ | 6.01 грн |
500+ | 4.7 грн |
1000+ | 3.27 грн |