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SCS210KGHRC ROHM Semiconductor
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SCS210KGHRC ROHM Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V, Qualification: AEC-Q101.
Інші пропозиції SCS210KGHRC
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SCS210KGHRC | Виробник : Rohm Semiconductor |
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на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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SCS210KGHRC | Виробник : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 550pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Qualification: AEC-Q101 |
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