Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99379) > Сторінка 864 з 1657
Фото | Назва | Виробник | Інформація |
Доступність |
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DTC143TU3T106 | Rohm Semiconductor |
Description: DTC143TU3 IS AN DIGITAL TRANSIST Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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2SK2103T100 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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2SK2103T100 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
на замовлення 1946 шт: термін постачання 21-31 дні (днів) |
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RB521VM-40FHTE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA UMD2 Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Current - Reverse Leakage @ Vr: 90 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RB521VM-40FHTE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA UMD2 Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Current - Reverse Leakage @ Vr: 90 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 11043 шт: термін постачання 21-31 дні (днів) |
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RB521SM-40FHT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA EMD2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Current - Reverse Leakage @ Vr: 90 µA @ 40 V Qualification: AEC-Q101 |
товар відсутній |
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RB521SM-40FHT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA EMD2 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Current - Reverse Leakage @ Vr: 90 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 1697 шт: термін постачання 21-31 дні (днів) |
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RB521CS-30T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA VMN2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RB521CS-30T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 100MA VMN2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
на замовлення 18954 шт: термін постачання 21-31 дні (днів) |
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SMF14VTR | Rohm Semiconductor |
Description: TVS DIODE 14VWM 23.2VC PMDU Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.6A Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 200W Power Line Protection: No |
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SMF14VTR | Rohm Semiconductor |
Description: TVS DIODE 14VWM 23.2VC PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.6A Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 200W Power Line Protection: No |
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BD50FA1MG-MTR | Rohm Semiconductor |
Description: IC REG LINEAR 5V 100MA 5SSOP Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 450 µA Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD50FA1MG-MTR | Rohm Semiconductor |
Description: IC REG LINEAR 5V 100MA 5SSOP Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 450 µA Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity |
на замовлення 5724 шт: термін постачання 21-31 дні (днів) |
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SCT3030ARC14 | Rohm Semiconductor |
Description: SICFET N-CH 650V 70A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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RSS070N05FW4TB1 | Rohm Semiconductor | Description: MOSFET N-CH 50V 7A SOP8 |
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RSS070N05TB1 | Rohm Semiconductor | Description: MOSFET N-CH 45V 7A 8SOP |
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BU91796FS-ME2 | Rohm Semiconductor |
Description: LOW DUTY LCD SEGMENT DRIVERS FOR Packaging: Tape & Reel (TR) Package / Case: 32-SOP (0.213", 5.40mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 80 Segment Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.5V ~ 6V Supplier Device Package: 32-SSOP-A Part Status: Active Current - Supply: 12.5 µA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BU91796FS-ME2 | Rohm Semiconductor |
Description: LOW DUTY LCD SEGMENT DRIVERS FOR Packaging: Cut Tape (CT) Package / Case: 32-SOP (0.213", 5.40mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 80 Segment Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.5V ~ 6V Supplier Device Package: 32-SSOP-A Part Status: Active Current - Supply: 12.5 µA |
на замовлення 13945 шт: термін постачання 21-31 дні (днів) |
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BD49K34G-TL | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
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BD49K34G-TL | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 842 шт: термін постачання 21-31 дні (днів) |
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RSB33F2T106 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RSB33F2T106 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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R8005ANJFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 5A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R8005ANJFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 5A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1848 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ362 | Rohm Semiconductor |
Description: RES SMD 3.6 KOHM 5% 0.3W 0603 Packaging: Tape & Reel (TR) Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.6 kOhms |
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SDR03EZPJ362 | Rohm Semiconductor |
Description: RES SMD 3.6 KOHM 5% 0.3W 0603 Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.6 kOhms |
на замовлення 3462 шт: термін постачання 21-31 дні (днів) |
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DTC143ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
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DTC143ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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RF301BGE2STL | Rohm Semiconductor | Description: DIODE GEN PURP 200V 3A TO252GE |
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RF301BGE2STL | Rohm Semiconductor | Description: DIODE GEN PURP 200V 3A TO252GE |
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RF305BM6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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RF305BM6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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RF305BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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RF305BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2410 шт: термін постачання 21-31 дні (днів) |
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RGW60TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 72 W |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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RGTV60TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
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RGTV00TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 45A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 102 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 41ns/142ns Switching Energy: 1.17mJ (on), 940µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 94 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGTH00TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 35A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 225 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 72 W |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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RGW60TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 72 W |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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RGTV60TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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RGTH40TK65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 23A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 56 W |
на замовлення 319 шт: термін постачання 21-31 дні (днів) |
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RGTH50TK65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 26A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 59 W |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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RGTH40TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 23A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 56 W |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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RGTH50TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 26A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 59 W |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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RGTH80TK65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 31A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 66 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RB168VAM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 1A TUMD2M Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPJ204 | Rohm Semiconductor |
Description: RES 200K OHM 5% 1/2W 1206 Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 200 kOhms |
на замовлення 14890 шт: термін постачання 21-31 дні (днів) |
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DTA143ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 5346 шт: термін постачання 21-31 дні (днів) |
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DTA143EEBHZGTL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (WITH BUI |
товар відсутній |
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DTA143EEBHZGTL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (WITH BUI |
товар відсутній |
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BA178M18FP-E2 | Rohm Semiconductor | Description: IC REG LINEAR 18V 500MA TO252-3 |
товар відсутній |
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BA178M18FP-E2 | Rohm Semiconductor | Description: IC REG LINEAR 18V 500MA TO252-3 |
на замовлення 725 шт: термін постачання 21-31 дні (днів) |
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DTA143EEFRATL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (AEC-Q101 |
товар відсутній |
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DTA143EEFRATL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (AEC-Q101 |
товар відсутній |
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BU52098GWZ-E2 | Rohm Semiconductor | Description: OMNIPOLAR DETECTION HALL IC IS M |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BU52098GWZ-E2 | Rohm Semiconductor | Description: OMNIPOLAR DETECTION HALL IC IS M |
на замовлення 5195 шт: термін постачання 21-31 дні (днів) |
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BU52274NUZ-ZE2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLAR Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±7.4mT Trip, ±4.3mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BU52274NUZ-ZE2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLAR Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±7.4mT Trip, ±4.3mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 12878 шт: термін постачання 21-31 дні (днів) |
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ML620Q504H-NNNTBWBX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 48TQFP Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 16.8MHz Program Memory Size: 64KB (32K x 16) RAM Size: 3K x 16 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 16 Core Processor: nX-U16/100 Data Converters: A/D 12x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: Melody Driver, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
товар відсутній |
DTC143TU3T106 |
Виробник: Rohm Semiconductor
Description: DTC143TU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: DTC143TU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.26 грн |
30+ | 10.07 грн |
100+ | 4.9 грн |
2SK2103T100 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET N-CH 30V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 22.31 грн |
2SK2103T100 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET N-CH 30V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.89 грн |
10+ | 43.65 грн |
100+ | 30.21 грн |
500+ | 23.69 грн |
RB521VM-40FHTE-17 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.05 грн |
6000+ | 3.62 грн |
9000+ | 3 грн |
RB521VM-40FHTE-17 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
на замовлення 11043 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.65 грн |
19+ | 15.94 грн |
100+ | 7.77 грн |
500+ | 6.08 грн |
1000+ | 4.22 грн |
RB521SM-40FHT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
RB521SM-40FHT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
на замовлення 1697 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.57 грн |
14+ | 22.41 грн |
100+ | 11.31 грн |
500+ | 8.66 грн |
1000+ | 6.42 грн |
RB521CS-30T2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 8.46 грн |
RB521CS-30T2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA VMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
на замовлення 18954 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.81 грн |
13+ | 24.47 грн |
100+ | 14.67 грн |
500+ | 12.74 грн |
1000+ | 8.67 грн |
2000+ | 7.98 грн |
SMF14VTR |
Виробник: Rohm Semiconductor
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
SMF14VTR |
Виробник: Rohm Semiconductor
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
BD50FA1MG-MTR |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 40.84 грн |
BD50FA1MG-MTR |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
на замовлення 5724 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 57.23 грн |
10+ | 50.55 грн |
25+ | 49.91 грн |
50+ | 46.55 грн |
100+ | 41.62 грн |
250+ | 41.27 грн |
500+ | 40 грн |
1000+ | 38.56 грн |
SCT3030ARC14 |
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 171 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3464.22 грн |
30+ | 2795.63 грн |
120+ | 2609.27 грн |
BU91796FS-ME2 |
Виробник: Rohm Semiconductor
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Tape & Reel (TR)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Tape & Reel (TR)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 63.74 грн |
6000+ | 59.11 грн |
10000+ | 56.83 грн |
BU91796FS-ME2 |
Виробник: Rohm Semiconductor
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 13945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 138.87 грн |
10+ | 120.5 грн |
25+ | 113.66 грн |
100+ | 90.88 грн |
250+ | 85.34 грн |
500+ | 74.67 грн |
1000+ | 60.86 грн |
BD49K34G-TL |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 842 шт:
термін постачання 21-31 дні (днів)RSB33F2T106 |
Виробник: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Description: TVS DIODE 25VWM UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.96 грн |
RSB33F2T106 |
Виробник: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Description: TVS DIODE 25VWM UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.05 грн |
12+ | 24.54 грн |
100+ | 16.73 грн |
500+ | 11.78 грн |
1000+ | 8.83 грн |
R8005ANJFRGTL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 101.7 грн |
R8005ANJFRGTL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1848 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 152.61 грн |
10+ | 123.81 грн |
100+ | 100.13 грн |
500+ | 91.91 грн |
SDR03EZPJ362 |
Виробник: Rohm Semiconductor
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
товар відсутній
SDR03EZPJ362 |
Виробник: Rohm Semiconductor
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
на замовлення 3462 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 8.39 грн |
42+ | 7.05 грн |
108+ | 2.73 грн |
1000+ | 1.13 грн |
2500+ | 0.97 грн |
DTC143ECAT116 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
DTC143ECAT116 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 41 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 19.08 грн |
24+ | 12.34 грн |
RF301BGE2STL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Description: DIODE GEN PURP 200V 3A TO252GE
товар відсутній
RF301BGE2STL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Description: DIODE GEN PURP 200V 3A TO252GE
товар відсутній
RF305BM6STL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
RF305BM6STL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.36 грн |
10+ | 68.11 грн |
100+ | 53.09 грн |
RF305BM6SFHTL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
RF305BM6SFHTL |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.25 грн |
10+ | 62.97 грн |
100+ | 49.09 грн |
500+ | 38.06 грн |
1000+ | 30.04 грн |
RGW60TK65DGVC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
на замовлення 440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 454.77 грн |
10+ | 368.13 грн |
RGTV60TK65DGVC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
товар відсутній
RGTV00TK65DGC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 94 W
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 94 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 372.37 грн |
10+ | 307.07 грн |
450+ | 264.96 грн |
RGTH00TK65DGC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
Description: IGBT TRNCH FIELD 650V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
на замовлення 448 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 483.01 грн |
30+ | 371.26 грн |
120+ | 332.16 грн |
RGW60TK65GVC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 401.36 грн |
30+ | 306.43 грн |
RGTV60TK65GVC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 283.09 грн |
30+ | 215.83 грн |
120+ | 184.99 грн |
RGTH40TK65GC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
на замовлення 319 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 165.58 грн |
30+ | 128.27 грн |
120+ | 105.55 грн |
RGTH50TK65GC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
на замовлення 446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 384.57 грн |
30+ | 293.15 грн |
120+ | 251.27 грн |
RGTH40TK65DGC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
на замовлення 440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 399.83 грн |
30+ | 305.18 грн |
120+ | 261.57 грн |
RGTH50TK65DGC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
на замовлення 445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 427.3 грн |
30+ | 326.12 грн |
120+ | 279.54 грн |
RGTH80TK65GC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 431.88 грн |
30+ | 329.5 грн |
120+ | 282.42 грн |
RB168VAM100TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.53 грн |
6000+ | 6.15 грн |
9000+ | 5.44 грн |
30000+ | 5.04 грн |
ESR18EZPJ204 |
Виробник: Rohm Semiconductor
Description: RES 200K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
Description: RES 200K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
на замовлення 14890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.5 грн |
40+ | 7.35 грн |
61+ | 4.89 грн |
100+ | 3.93 грн |
500+ | 2.82 грн |
1000+ | 2.48 грн |
DTA143ZU3T106 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.38 грн |
DTA143ZU3T106 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 5346 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 14.5 грн |
32+ | 9.41 грн |
100+ | 4.57 грн |
500+ | 3.57 грн |
1000+ | 2.48 грн |
DTA143EEBHZGTL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товар відсутній
DTA143EEBHZGTL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товар відсутній
BA178M18FP-E2 |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252-3
Description: IC REG LINEAR 18V 500MA TO252-3
товар відсутній
BA178M18FP-E2 |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252-3
Description: IC REG LINEAR 18V 500MA TO252-3
на замовлення 725 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 74.78 грн |
10+ | 64.51 грн |
25+ | 61.22 грн |
100+ | 47.21 грн |
250+ | 44.13 грн |
500+ | 39 грн |
DTA143EEFRATL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
товар відсутній
DTA143EEFRATL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
товар відсутній
BU52098GWZ-E2 |
Виробник: Rohm Semiconductor
Description: OMNIPOLAR DETECTION HALL IC IS M
Description: OMNIPOLAR DETECTION HALL IC IS M
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 19.78 грн |
BU52098GWZ-E2 |
Виробник: Rohm Semiconductor
Description: OMNIPOLAR DETECTION HALL IC IS M
Description: OMNIPOLAR DETECTION HALL IC IS M
на замовлення 5195 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.65 грн |
7+ | 48.35 грн |
10+ | 42.1 грн |
25+ | 34.67 грн |
50+ | 28.81 грн |
100+ | 24.55 грн |
500+ | 20.99 грн |
1000+ | 18.37 грн |
BU52274NUZ-ZE2 |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 22.06 грн |
10000+ | 19.66 грн |
BU52274NUZ-ZE2 |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 12878 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.04 грн |
10+ | 44.53 грн |
25+ | 38.36 грн |
50+ | 34.71 грн |
100+ | 29.57 грн |
500+ | 25.72 грн |
1000+ | 22.13 грн |
ML620Q504H-NNNTBWBX |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
товар відсутній