RGTH00TK65DGC11 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
Description: IGBT TRNCH FIELD 650V 35A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
на замовлення 448 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 157.18 грн |
30+ | 120.41 грн |
120+ | 103.21 грн |
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Технічний опис RGTH00TK65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 35A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 225 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/143ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 72 W.
Інші пропозиції RGTH00TK65DGC11 за ціною від 245.29 грн до 527.87 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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RGTH00TK65DGC11 | Виробник : ROHM |
Description: ROHM - RGTH00TK65DGC11 - IGBT, 35 A, 1.6 V, 72 W, 650 V, TO-3PFM, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 72W Bauform - Transistor: TO-3PFM Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 35A SVHC: Lead (17-Jan-2023) |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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RGTH00TK65DGC11 | Виробник : ROHM Semiconductor | IGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
на замовлення 417 шт: термін постачання 21-30 дні (днів) |
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