Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MCT6 | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
на замовлення 25395 шт: термін постачання 21-31 дні (днів) |
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NCV20092DMR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA (x2 Channels) Slew Rate: 0.17V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NCV20092DMR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA (x2 Channels) Slew Rate: 0.17V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NCV68261MTWAITBG | onsemi |
![]() Packaging: Tape & Reel (TR) Features: Load Discharge Package / Case: 6-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 32V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 6-WDFNW (2x2) Fault Protection: Over Voltage, Reverse Current, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
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NCV68261MTWAITBG | onsemi |
![]() Packaging: Cut Tape (CT) Features: Load Discharge Package / Case: 6-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 32V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 6-WDFNW (2x2) Fault Protection: Over Voltage, Reverse Current, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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FDMS86181 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMS86181 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V |
на замовлення 7952 шт: термін постачання 21-31 дні (днів) |
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NTMFD1D1N02X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCP5010FCT1G | onsemi |
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LM4041BSD-122GT3 | onsemi |
![]() Packaging: Bulk Part Status: Active |
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2N7002V | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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2N7002V | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F Part Status: Active |
на замовлення 35232 шт: термін постачання 21-31 дні (днів) |
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CAT863MTBI-GT3 | onsemi |
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на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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CAT863TTBI-GT3 | onsemi |
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на замовлення 12468 шт: термін постачання 21-31 дні (днів) |
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KSC5305DTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 75 W |
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FJX4009RTF | onsemi |
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MTD3055V | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
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MTD3055V | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
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2N3820 | onsemi |
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NP3100GBRLG | onsemi |
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NSVS50031SB3T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 3-CPH Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.1 W |
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NSVS50031SB3T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 3-CPH Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.1 W |
на замовлення 1835 шт: термін постачання 21-31 дні (днів) |
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CPH6121-TL-E | onsemi |
Description: TRANS PNP 12V 3A 6CPH Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 6-CPH Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 1.3 W |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDLL400 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FDLL400 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
на замовлення 7484 шт: термін постачання 21-31 дні (днів) |
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MMUN2113LT3 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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MMUN2113LT1 | onsemi |
![]() Packaging: Cut Tape (CT) |
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NC7S02M5X-L22090 | onsemi |
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на замовлення 114000 шт: термін постачання 21-31 дні (днів) |
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MUN2112T3 | onsemi |
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MUN2112T1G | onsemi |
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на замовлення 271889 шт: термін постачання 21-31 дні (днів) |
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MUN2112T1 | onsemi |
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на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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NSVMUN2112T1G | onsemi |
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на замовлення 297000 шт: термін постачання 21-31 дні (днів) |
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CPH5541-TL-E | onsemi |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CPH5541-TL-E | onsemi |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CPH6001A-TL-E | onsemi |
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CPH6001A-TL-E | onsemi |
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на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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LV5893M-TE-L-E | onsemi | Description: STEP DOWN SWITCHING REGULATOR |
на замовлення 226000 шт: термін постачання 21-31 дні (днів) |
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NCP12400CBHAA0DR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 12 V |
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NCP12400CBHAA0DR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 12 V |
на замовлення 2476 шт: термін постачання 21-31 дні (днів) |
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NCP12400BBBBB2DR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 12 V |
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NCP12400BBBBB2DR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 12 V |
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NCP12400BBBBA0DR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Supplier Device Package: 7-SOIC |
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NCP12400BBBBA0DR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Supplier Device Package: 7-SOIC |
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NCV70627DQ002AR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: Serial Operating Temperature: -40°C ~ 160°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 5.5V ~ 29V Technology: Power MOSFET Voltage - Load: 5.5V ~ 29V Supplier Device Package: 36-SSOP-EP Motor Type - Stepper: Bipolar Step Resolution: 1/2, 1/4, 1/8, 1/16 Grade: Automotive |
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BC846CLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 225 mW |
на замовлення 20760 шт: термін постачання 21-31 дні (днів) |
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NTMTS002N10MCTXG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Power Dissipation (Max): 9W (Ta), 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 520µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NTMT061N60S5F | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 4.6mA Supplier Device Package: 4-TDFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V |
на замовлення 2887 шт: термін постачання 21-31 дні (днів) |
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NB3V1102CMTTBG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: LVCMOS Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 3.6V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-WDFN (2x2) Part Status: Active Frequency - Max: 250 MHz |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NB3V1102CMTTBG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-WFDFN Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: LVCMOS Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 3.6V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-WDFN (2x2) Part Status: Active Frequency - Max: 250 MHz |
на замовлення 5984 шт: термін постачання 21-31 дні (днів) |
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NB3V1104CMTTBG | onsemi |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NB3V1104CMTTBG | onsemi |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FFPF20UA60DNT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товар відсутній |
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FGA40T65SHDF | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Switching Energy: 1.22mJ (on), 440µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 68 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
на замовлення 137 шт: термін постачання 21-31 дні (днів) |
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NVATS4A101PZT4G | onsemi |
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NVATS4A102PZT4G | onsemi |
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товар відсутній |
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NVATS4A104PZT4G | onsemi |
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товар відсутній |
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LC87F7J32AU-QIP-E | onsemi |
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на замовлення 2767 шт: термін постачання 21-31 дні (днів) |
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LC87F7J32AU-QIP-E | onsemi |
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товар відсутній |
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LC87F2K08AU-DIP-E | onsemi |
Description: IC MCU 8BIT 8KB FLASH 24DIP Packaging: Tube Package / Case: 24-SDIP (0.300", 7.62mm) Mounting Type: Through Hole Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Data Converters: A/D 5x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: SIO, UART/USART Peripherals: LVD, POR, WDT Supplier Device Package: 24-PDIP/DIPS Number of I/O: 9 DigiKey Programmable: Not Verified |
товар відсутній |
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LC87F7BC8AU-QIP-E | onsemi | Description: IC MCU 8BIT 128KB FLASH QFP |
товар відсутній |
MCT6 |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
на замовлення 25395 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.88 грн |
50+ | 44.88 грн |
100+ | 33.22 грн |
500+ | 28.64 грн |
1000+ | 23.59 грн |
2000+ | 22.41 грн |
5000+ | 21.55 грн |
10000+ | 21.05 грн |
25000+ | 20.72 грн |
NCV20092DMR2G |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 22.53 грн |
NCV20092DMR2G |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 58.8 грн |
10+ | 49.36 грн |
25+ | 46.4 грн |
100+ | 35.53 грн |
250+ | 33 грн |
500+ | 28.09 грн |
1000+ | 22.1 грн |
NCV68261MTWAITBG |
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Виробник: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Tape & Reel (TR)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NCV68261MTWAITBG |
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Виробник: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IDEAL DIODE AND HS SWITCH NMOS D
Packaging: Cut Tape (CT)
Features: Load Discharge
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.36 грн |
10+ | 59.89 грн |
FDMS86181 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 84.03 грн |
6000+ | 77.88 грн |
FDMS86181 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
на замовлення 7952 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 186.21 грн |
10+ | 149.04 грн |
100+ | 118.65 грн |
500+ | 94.22 грн |
1000+ | 79.94 грн |
NTMFD1D1N02X |
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Виробник: onsemi
Description: MOSFET 2N-CH 25V 14A/75A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 25V 14A/75A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 62.73 грн |
LM4041BSD-122GT3 |
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товар відсутній
2N7002V |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.25 грн |
6000+ | 9.37 грн |
9000+ | 8.7 грн |
30000+ | 7.98 грн |
2N7002V |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 35232 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.91 грн |
12+ | 25.05 грн |
100+ | 17.41 грн |
500+ | 12.75 грн |
1000+ | 10.37 грн |
CAT863MTBI-GT3 |
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Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
825+ | 24.81 грн |
CAT863TTBI-GT3 |
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Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
на замовлення 12468 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
825+ | 24.81 грн |
KSC5305DTU |
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Виробник: onsemi
Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
товар відсутній
MTD3055V |
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Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
MTD3055V |
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Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товар відсутній
NSVS50031SB3T1G |
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Виробник: onsemi
Description: TRANS NPN 50V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Description: TRANS NPN 50V 3A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
товар відсутній
NSVS50031SB3T1G |
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Виробник: onsemi
Description: TRANS NPN 50V 3A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Description: TRANS NPN 50V 3A 3CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
на замовлення 1835 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.99 грн |
10+ | 38.4 грн |
100+ | 26.6 грн |
500+ | 20.86 грн |
1000+ | 17.75 грн |
CPH6121-TL-E |
Виробник: onsemi
Description: TRANS PNP 12V 3A 6CPH
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.3 W
Description: TRANS PNP 12V 3A 6CPH
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.3 W
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2219+ | 10.01 грн |
FDLL400 |
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Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 4.22 грн |
5000+ | 3.89 грн |
FDLL400 |
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Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 7484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.37 грн |
19+ | 15.83 грн |
100+ | 7.98 грн |
500+ | 6.11 грн |
1000+ | 4.53 грн |
MMUN2113LT3 |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
MMUN2113LT1 |
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товар відсутній
NC7S02M5X-L22090 |
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Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP SOT23-5
Description: IC GATE NOR 1CH 2-INP SOT23-5
на замовлення 114000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.9 грн |
MUN2112T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 100MA SC59
Description: TRANS PREBIAS PNP 50V 100MA SC59
на замовлення 271889 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 1.38 грн |
MUN2112T1 |
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Виробник: onsemi
Description: TRANS BRT PNP 100MA 50V SC-59
Description: TRANS BRT PNP 100MA 50V SC-59
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5770+ | 3.45 грн |
NSVMUN2112T1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SC59-3
Description: TRANS PREBIAS PNP 50V SC59-3
на замовлення 297000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 1.38 грн |
CPH5541-TL-E |
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Виробник: onsemi
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.1 грн |
CPH5541-TL-E |
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Виробник: onsemi
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.91 грн |
12+ | 25.84 грн |
100+ | 19.3 грн |
500+ | 14.23 грн |
1000+ | 11 грн |
CPH6001A-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 12V 6.7GHZ 6CPH
Description: RF TRANS NPN 12V 6.7GHZ 6CPH
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.69 грн |
10+ | 29.62 грн |
100+ | 20.15 грн |
500+ | 14.18 грн |
1000+ | 10.63 грн |
LV5893M-TE-L-E |
Виробник: onsemi
Description: STEP DOWN SWITCHING REGULATOR
Description: STEP DOWN SWITCHING REGULATOR
на замовлення 226000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1519+ | 13.78 грн |
NCP12400CBHAA0DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
товар відсутній
NCP12400CBHAA0DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
на замовлення 2476 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.85 грн |
10+ | 57.86 грн |
25+ | 54.94 грн |
100+ | 39.58 грн |
250+ | 34.98 грн |
500+ | 33.14 грн |
1000+ | 25.35 грн |
NCP12400BBBBB2DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
товар відсутній
NCP12400BBBBB2DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9.5V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
товар відсутній
NCP12400BBBBA0DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
Description: IC OFFLINE SWITCH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
товар відсутній
NCP12400BBBBA0DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
Description: IC OFFLINE SWITCH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Supplier Device Package: 7-SOIC
товар відсутній
NCV70627DQ002AR2G |
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Виробник: onsemi
Description: IC MTR DRV MICROSTEP 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Serial
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5.5V ~ 29V
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 29V
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Grade: Automotive
Description: IC MTR DRV MICROSTEP 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Serial
Operating Temperature: -40°C ~ 160°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5.5V ~ 29V
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 29V
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Step Resolution: 1/2, 1/4, 1/8, 1/16
Grade: Automotive
товар відсутній
BC846CLT1G |
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Виробник: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
на замовлення 20760 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 9.8 грн |
45+ | 6.53 грн |
100+ | 3.54 грн |
500+ | 2.61 грн |
1000+ | 1.81 грн |
NTMTS002N10MCTXG |
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Виробник: onsemi
Description: PTNG 100V, SINGLE NCH, PQFN8X8 S
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
Description: PTNG 100V, SINGLE NCH, PQFN8X8 S
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Power Dissipation (Max): 9W (Ta), 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 520µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6305 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 226.18 грн |
NTMT061N60S5F |
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Виробник: onsemi
Description: SUPERFET5 FRFET, 61MOHM, PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 4.6mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V
Description: SUPERFET5 FRFET, 61MOHM, PQFN88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 20.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 4.6mA
Supplier Device Package: 4-TDFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 400 V
на замовлення 2887 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 581.24 грн |
10+ | 479.78 грн |
100+ | 399.8 грн |
500+ | 331.06 грн |
1000+ | 297.95 грн |
NB3V1102CMTTBG |
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Виробник: onsemi
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
Frequency - Max: 250 MHz
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
Frequency - Max: 250 MHz
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 207.94 грн |
NB3V1102CMTTBG |
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Виробник: onsemi
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
Frequency - Max: 250 MHz
Description: IC CLK BUFFER 1:2 250MHZ 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 3.6V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-WDFN (2x2)
Part Status: Active
Frequency - Max: 250 MHz
на замовлення 5984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 414.63 грн |
10+ | 358.33 грн |
25+ | 338.73 грн |
100+ | 275.51 грн |
250+ | 261.38 грн |
500+ | 234.54 грн |
1000+ | 194.56 грн |
NB3V1104CMTTBG |
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Виробник: onsemi
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 165.86 грн |
NB3V1104CMTTBG |
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Виробник: onsemi
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
Description: IC CLK BUFFER 1:4 250MHZ 8WDFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 330.95 грн |
10+ | 285.81 грн |
25+ | 270.2 грн |
100+ | 219.76 грн |
250+ | 208.49 грн |
500+ | 187.07 грн |
1000+ | 155.19 грн |
FFPF20UA60DNT |
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Виробник: onsemi
Description: DIODE ARR AVAL 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE ARR AVAL 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
FGA40T65SHDF |
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Виробник: onsemi
Description: IGBT TRENCH/FS 650V 80A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Switching Energy: 1.22mJ (on), 440µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH/FS 650V 80A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Switching Energy: 1.22mJ (on), 440µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 68 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
на замовлення 137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 251.04 грн |
10+ | 202.69 грн |
LC87F7J32AU-QIP-E |
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Виробник: onsemi
Description: IC MCU 8BIT 32KB FLASH 64QIPE
Description: IC MCU 8BIT 32KB FLASH 64QIPE
на замовлення 2767 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
80+ | 260.48 грн |
LC87F2K08AU-DIP-E |
Виробник: onsemi
Description: IC MCU 8BIT 8KB FLASH 24DIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 5x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SIO, UART/USART
Peripherals: LVD, POR, WDT
Supplier Device Package: 24-PDIP/DIPS
Number of I/O: 9
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24DIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 5x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SIO, UART/USART
Peripherals: LVD, POR, WDT
Supplier Device Package: 24-PDIP/DIPS
Number of I/O: 9
DigiKey Programmable: Not Verified
товар відсутній