| Фото | Назва | Виробник | Інформація |
Доступність |
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SMBT1282LT1 | onsemi |
Description: SS SOT23 GP XSTR SPCL TR Packaging: Bulk |
на замовлення 249000 шт: термін постачання 21-31 дні (днів) |
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CM1214A-01SO | onsemi |
 Description: TVS DIODE 7VWM 11.3VC SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: Ethernet, RF Antenna Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: SOT-23-3 (TO-236) Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 11.3V (Typ) Power Line Protection: No Part Status: Obsolete |
на замовлення 108267 шт: термін постачання 21-31 дні (днів) |
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| CAT25M01XE-T2 | onsemi |
Description: CAT25M01 - SERIAL EEPROM, 128KX8 Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 11076 шт: термін постачання 21-31 дні (днів) |
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CAT25M01LI-G | onsemi |
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-PDIP Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 2463 шт: термін постачання 21-31 дні (днів) |
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NTMFS022N15MC | onsemi |
Description: POWER MOSFET, 150V SINGLE N CHAN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NTMFS022N15MC | onsemi |
Description: POWER MOSFET, 150V SINGLE N CHAN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V |
на замовлення 27229 шт: термін постачання 21-31 дні (днів) |
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NTTFS022N15MC | onsemi |
Description: POWER MOSFET, N CHANNEL, 150V, 3 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTTFS022N15MC | onsemi |
Description: POWER MOSFET, N CHANNEL, 150V, 3 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V |
на замовлення 6979 шт: термін постачання 21-31 дні (днів) |
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NJVMJD148T4G | onsemi |
Description: TRANS NPN 45V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: DPAK Grade: Automotive Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.75 W Qualification: AEC-Q101 |
товар відсутній |
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4N32VM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Darlington with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
на замовлення 2047 шт: термін постачання 21-31 дні (днів) |
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AFGHL25T120RL | onsemi |
Description: 1200V/25A FSII IGBT LOW VCESAT ( Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 159 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27.2ns/116ns Switching Energy: 1.94mJ (on), 730µJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 277 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector Pulsed (Icm): 100 A Power - Max: 400 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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AFGHL25T120RH | onsemi |
Description: 1200V/25A FSII IGBT (NO FRD) TO2 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 159 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/118ns Switching Energy: 1.94mJ (on), 770µJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 189 nC Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 261 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| NXH25T120L2Q1PG | onsemi |
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: 44-PIM (71x37.4) Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 81 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V |
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| NXH25T120L2Q1PTG | onsemi |
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: 44-PIM (71x37.4) Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 81 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V |
товар відсутній |
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| LC749492PT-UCE-H | onsemi |
Description: LCD PICTURE IMPROVEMENT Packaging: Bulk Part Status: Active |
на замовлення 164700 шт: термін постачання 21-31 дні (днів) |
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FSA1258AL8X | onsemi |
Description: LOW RON LOW VOLTAGE DUAL-SPST AN |
на замовлення 38841 шт: термін постачання 21-31 дні (днів) |
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KA7905TU | onsemi |
Description: IC REG LINEAR -5V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Current - Quiescent (Iq): 6 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): -5V Part Status: Obsolete PSRR: 60dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
на замовлення 71357 шт: термін постачання 21-31 дні (днів) |
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NCP7905ACTG | onsemi | Description: IC REG LINEAR 5V 1A TO220AB |
на замовлення 7900 шт: термін постачання 21-31 дні (днів) |
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FDS4435A | onsemi |
Description: MOSFET P-CH 30V 9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V |
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FDS4435A | onsemi |
Description: MOSFET P-CH 30V 9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V |
на замовлення 146 шт: термін постачання 21-31 дні (днів) |
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NCP1256BSN100T1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 100kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Over Power, Over Voltage, Short Circuit Voltage - Start Up: 18 V Part Status: Obsolete |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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| DTC114YRLRM | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active |
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MMSZ5260ET1 | onsemi |
Description: DIODE ZENER 43V 500MW SOD123 Packaging: Bulk Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 93 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 33 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NRVBSS25FA | onsemi |
Description: DIODE SCHOTTKY 50V 2A SOD123FA Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 ns Technology: Schottky Capacitance @ Vr, F: 93pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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NDS8926 | onsemi |
Description: MOSFET 2N-CH 20V 5.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
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NDS8926 | onsemi |
Description: MOSFET 2N-CH 20V 5.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
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15GN03FA-TL-H | onsemi |
Description: TRANS NPN VHF-UHF 70A 10V SSFP Packaging: Bulk Package / Case: SC-81 Mounting Type: Surface Mount Supplier Device Package: 3-SSFP |
на замовлення 91000 шт: термін постачання 21-31 дні (днів) |
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NCP252160MNTWG | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Packaging: Tape & Reel (TR) Features: Bootstrap Circuit Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: DC-DC Converters Current - Output / Channel: 60A Technology: N-Channel MOSFET Voltage - Load: 4.5V ~ 16V Supplier Device Package: 31-PQFN (5x5) Load Type: Inductive, Capacitive, Resistive Part Status: Active |
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NCP252160MNTWG | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 31PQFN Packaging: Cut Tape (CT) Features: Bootstrap Circuit Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Applications: DC-DC Converters Current - Output / Channel: 60A Technology: N-Channel MOSFET Voltage - Load: 4.5V ~ 16V Supplier Device Package: 31-PQFN (5x5) Load Type: Inductive, Capacitive, Resistive Part Status: Active |
на замовлення 1317 шт: термін постачання 21-31 дні (днів) |
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LV58063MCZ-AH | onsemi |
Description: IC REG BUCK ADJ 3A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Frequency - Switching: 370kHz Voltage - Input (Max): 28V Topology: Buck Supplier Device Package: 8-SOIC-EP/SOP8L Synchronous Rectifier: No Voltage - Output (Max): 28V Voltage - Input (Min): 8V Voltage - Output (Min/Fixed): 0.8V |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C426NLT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
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NTMFS5C426NLT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
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| 2SC4363-AC | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSTR NPN Packaging: Bulk Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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STR-RSL10-MESH-KIT-GEVK | onsemi |
Description: RSL10 BLE MESH KIT Packaging: Bulk For Use With/Related Products: RSL10 Frequency: 2.4GHz Type: Transceiver; Bluetooth® 5 Supplied Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| CAT28LV65-25 | onsemi |
Description: IC EEPROM 64KBIT Packaging: Bulk Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: EEPROM Memory Format: EEPROM Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Access Time: 250 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 2433 шт: термін постачання 21-31 дні (днів) |
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NUF6107MNTBG | onsemi |
Description: FILTER RC(PI) 100 OHM/30PF SMD |
на замовлення 183000 шт: термін постачання 21-31 дні (днів) |
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FGH75T65SHDTLN4 | onsemi |
Description: FS3 T TO247 75A 650V 4WL Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 55ns/189ns Switching Energy: 1.06mJ (on), 1.56mJ (off) Test Condition: 400V, 75A, 15Ohm, 15V Gate Charge: 126 nC Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 455 W |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65LQDT | onsemi |
Description: FS4 LOW VCESAT IGBT 650V 75A TO2 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 152 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/568ns Switching Energy: 1.88mJ (on), 2.38mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 793 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 469 W |
на замовлення 308 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65MQDT | onsemi |
Description: FS4 MID SPEED IGBT 650V 75A TO24 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/118ns Switching Energy: 2.35mJ (on), 1.25mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
на замовлення 515 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65MQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/181ns Switching Energy: 1.2mJ (on), 1.1mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 149 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
на замовлення 533 шт: термін постачання 21-31 дні (днів) |
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FGHL75T65LQDTL4 | onsemi |
Description: FS4 LOW VCESAT IGBT 650V 75A TO2 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: TO-247-4L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/548ns Switching Energy: 1.01mJ (on), 2.53mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 779 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 469 W |
на замовлення 717 шт: термін постачання 21-31 дні (днів) |
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NVD5862NT4G-VF01 | onsemi |
Description: NFET DPAK 60V 98A 5.7MOHM Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V Power Dissipation (Max): 4.1W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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NTMJS0D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 56A/368A 8LFPAK |
товар відсутній |
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NTMJS0D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 56A/368A 8LFPAK |
товар відсутній |
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SMBT1230LT1G | onsemi |
Description: SS SOT23 GP XSTR SPCL TR Packaging: Bulk Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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3EZ13D5 | onsemi |
Description: DIODE ZENER 13V 3W DO41 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MC1066DBR2 | onsemi |
Description: SERIAL SWITCH/DIGITAL SENSOR Packaging: Bulk |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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1N6292AG | onsemi |
Description: TVS DIODE 64.1VWM 103VC AXIAL Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 64.1V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
на замовлення 4118 шт: термін постачання 21-31 дні (днів) |
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1N6292ARL4G | onsemi |
Description: TVS DIODE 64.1VWM 103VC AXIAL Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 64.1V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.3V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
на замовлення 8799 шт: термін постачання 21-31 дні (днів) |
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FAN6292MX | onsemi |
Description: IC SECONDARY SIDE CTRLR 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 0V ~ 6V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 6V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Current - Supply: 8 mA DigiKey Programmable: Not Verified |
товар відсутній |
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FAN6292MX | onsemi |
Description: IC SECONDARY SIDE CTRLR 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 0V ~ 6V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 6V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Current - Supply: 8 mA DigiKey Programmable: Not Verified |
товар відсутній |
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FAN6292BMX | onsemi |
Description: W2B ADAPTIVE TRAVEL ADAPTER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 0V ~ 6V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 6V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Supply: 8 mA DigiKey Programmable: Not Verified |
товар відсутній |
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FAN6292BMX | onsemi |
Description: W2B ADAPTIVE TRAVEL ADAPTER Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 0V ~ 6V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 6V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Supply: 8 mA DigiKey Programmable: Not Verified |
на замовлення 6854 шт: термін постачання 21-31 дні (днів) |
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74ALVC16245MTD | onsemi |
Description: IC TXRX NON-INVERT 3.6V 48TSSOP Packaging: Bulk Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP |
на замовлення 7600 шт: термін постачання 21-31 дні (днів) |
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74ALVC16245DTR | onsemi |
Description: IC TXRX NON-INVERT 3.6V 48TSSOP |
товар відсутній |
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NSR0240MXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 200MA 2X2DFN Packaging: Bulk Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X2DFN (1x0.6) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 40 V |
на замовлення 1038837 шт: термін постачання 21-31 дні (днів) |
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NSR02L40MX2WT5G | onsemi |
Description: DIODE SCHOTT 40V 200MA 2-X2DFNW Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: 2-X2DFNW (1x0.6) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 40 V |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
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FDD8870-F085 | onsemi |
Description: FDD8870 - N-CHANNEL POWERTRENCH Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V |
товар відсутній |
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5HN01M-TL-H | onsemi |
Description: MOSFET N-CH 50V 100MA 3MCP |
на замовлення 54300 шт: термін постачання 21-31 дні (днів) |
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LV5069JA-AH | onsemi |
Description: IC REG CTRLR BUCK 16SSOP |
на замовлення 702540 шт: термін постачання 21-31 дні (днів) |
|
| SMBT1282LT1 |
на замовлення 249000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11539+ | 2.2 грн |
| CM1214A-01SO |
|
Виробник: onsemi
Description: TVS DIODE 7VWM 11.3VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Ethernet, RF Antenna
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 7VWM 11.3VC SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Ethernet, RF Antenna
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11.3V (Typ)
Power Line Protection: No
Part Status: Obsolete
на замовлення 108267 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1655+ | 12.85 грн |
| CAT25M01XE-T2 |
Виробник: onsemi
Description: CAT25M01 - SERIAL EEPROM, 128KX8
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: CAT25M01 - SERIAL EEPROM, 128KX8
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 11076 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 128+ | 183.2 грн |
| CAT25M01LI-G |
Виробник: onsemi
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1MBIT SPI 10MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-PDIP
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 107+ | 219.68 грн |
| NTMFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 70.53 грн |
| NTMFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Description: POWER MOSFET, 150V SINGLE N CHAN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 41.9A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 80.6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
на замовлення 27229 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.68 грн |
| 10+ | 137.61 грн |
| 100+ | 95.53 грн |
| 500+ | 72.73 грн |
| 1000+ | 67.28 грн |
| NTTFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 80.3 грн |
| NTTFS022N15MC |
|
Виробник: onsemi
Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
Description: POWER MOSFET, N CHANNEL, 150V, 3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 37.2A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 75 V
на замовлення 6979 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 241.41 грн |
| 10+ | 152.04 грн |
| 100+ | 106.12 грн |
| 500+ | 81.14 грн |
| 1000+ | 75.2 грн |
| NJVMJD148T4G |
|
Виробник: onsemi
Description: TRANS NPN 45V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.75 W
Qualification: AEC-Q101
Description: TRANS NPN 45V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.75 W
Qualification: AEC-Q101
товар відсутній
| 4N32VM |
|
Виробник: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
на замовлення 2047 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.77 грн |
| 50+ | 37.52 грн |
| 100+ | 24.59 грн |
| 1000+ | 18.22 грн |
| 2000+ | 17 грн |
| AFGHL25T120RL |
Виробник: onsemi
Description: 1200V/25A FSII IGBT LOW VCESAT (
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27.2ns/116ns
Switching Energy: 1.94mJ (on), 730µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 277 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 400 W
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V/25A FSII IGBT LOW VCESAT (
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27.2ns/116ns
Switching Energy: 1.94mJ (on), 730µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 277 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 400 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| AFGHL25T120RH |
Виробник: onsemi
Description: 1200V/25A FSII IGBT (NO FRD) TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/118ns
Switching Energy: 1.94mJ (on), 770µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 189 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 261 W
Grade: Automotive
Qualification: AEC-Q101
Description: 1200V/25A FSII IGBT (NO FRD) TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/118ns
Switching Energy: 1.94mJ (on), 770µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 189 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 261 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| NXH25T120L2Q1PG |
|
Виробник: onsemi
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
товар відсутній
| NXH25T120L2Q1PTG |
|
Виробник: onsemi
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
Description: PIM Q1 3 CHANNEL T-TYPE NPC 25A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (71x37.4)
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.502 nF @ 20 V
товар відсутній
| LC749492PT-UCE-H |
на замовлення 164700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 94+ | 222.41 грн |
| FSA1258AL8X |
|
Виробник: onsemi
Description: LOW RON LOW VOLTAGE DUAL-SPST AN
Description: LOW RON LOW VOLTAGE DUAL-SPST AN
на замовлення 38841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 931+ | 23.9 грн |
| KA7905TU |
|
Виробник: onsemi
Description: IC REG LINEAR -5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
Part Status: Obsolete
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -5V
Part Status: Obsolete
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 71357 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 23.98 грн |
| NCP7905ACTG |
Виробник: onsemi
Description: IC REG LINEAR 5V 1A TO220AB
Description: IC REG LINEAR 5V 1A TO220AB
на замовлення 7900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1110+ | 20.17 грн |
| FDS4435A |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
товар відсутній
| FDS4435A |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
Description: MOSFET P-CH 30V 9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 15 V
на замовлення 146 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.3 грн |
| 10+ | 59.35 грн |
| 100+ | 46.14 грн |
| NCP1256BSN100T1G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1237+ | 17.37 грн |
| DTC114YRLRM |
|
товар відсутній
| MMSZ5260ET1 |
Виробник: onsemi
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
Description: DIODE ZENER 43V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 93 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 33 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6662+ | 3.62 грн |
| NRVBSS25FA |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| NDS8926 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| NDS8926 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 20V 5.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
товар відсутній
| 15GN03FA-TL-H |
|
Виробник: onsemi
Description: TRANS NPN VHF-UHF 70A 10V SSFP
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Description: TRANS NPN VHF-UHF 70A 10V SSFP
Packaging: Bulk
Package / Case: SC-81
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
на замовлення 91000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2826+ | 7.96 грн |
| NCP252160MNTWG |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
товар відсутній
| NCP252160MNTWG |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 60A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: DC-DC Converters
Current - Output / Channel: 60A
Technology: N-Channel MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 31-PQFN (5x5)
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 1317 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.51 грн |
| 10+ | 167.07 грн |
| 25+ | 157.63 грн |
| 100+ | 118.34 грн |
| 250+ | 103.54 грн |
| 500+ | 100.58 грн |
| 1000+ | 78.57 грн |
| LV58063MCZ-AH |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: 8-SOIC-EP/SOP8L
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 8V
Voltage - Output (Min/Fixed): 0.8V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 365+ | 57.17 грн |
| NTMFS5C426NLT1G |
|
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
товар відсутній
| NTMFS5C426NLT1G |
|
Виробник: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
товар відсутній
| 2SC4363-AC |
|
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2061+ | 11.64 грн |
| STR-RSL10-MESH-KIT-GEVK |
|
Виробник: onsemi
Description: RSL10 BLE MESH KIT
Packaging: Bulk
For Use With/Related Products: RSL10
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s)
Description: RSL10 BLE MESH KIT
Packaging: Bulk
For Use With/Related Products: RSL10
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17242.84 грн |
| CAT28LV65-25 |
Виробник: onsemi
Description: IC EEPROM 64KBIT
Packaging: Bulk
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT
Packaging: Bulk
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Access Time: 250 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 2433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 111+ | 210.36 грн |
| NUF6107MNTBG |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/30PF SMD
Description: FILTER RC(PI) 100 OHM/30PF SMD
на замовлення 183000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2061+ | 11.2 грн |
| FGH75T65SHDTLN4 |
|
Виробник: onsemi
Description: FS3 T TO247 75A 650V 4WL
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/189ns
Switching Energy: 1.06mJ (on), 1.56mJ (off)
Test Condition: 400V, 75A, 15Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 455 W
Description: FS3 T TO247 75A 650V 4WL
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 55ns/189ns
Switching Energy: 1.06mJ (on), 1.56mJ (off)
Test Condition: 400V, 75A, 15Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 455 W
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 333.97 грн |
| FGHL75T65LQDT |
|
Виробник: onsemi
Description: FS4 LOW VCESAT IGBT 650V 75A TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/568ns
Switching Energy: 1.88mJ (on), 2.38mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 793 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
Description: FS4 LOW VCESAT IGBT 650V 75A TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/568ns
Switching Energy: 1.88mJ (on), 2.38mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 793 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
на замовлення 308 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 572.1 грн |
| 10+ | 375.92 грн |
| 100+ | 276.53 грн |
| FGHL75T65MQDT |
|
Виробник: onsemi
Description: FS4 MID SPEED IGBT 650V 75A TO24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: FS4 MID SPEED IGBT 650V 75A TO24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/118ns
Switching Energy: 2.35mJ (on), 1.25mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 498.35 грн |
| 10+ | 325.16 грн |
| 100+ | 237.16 грн |
| 500+ | 192.24 грн |
| FGHL75T65MQDTL4 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/181ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 80A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/181ns
Switching Energy: 1.2mJ (on), 1.1mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 533 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 528.63 грн |
| 10+ | 345.79 грн |
| 100+ | 253.09 грн |
| 500+ | 207.7 грн |
| FGHL75T65LQDTL4 |
|
Виробник: onsemi
Description: FS4 LOW VCESAT IGBT 650V 75A TO2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/548ns
Switching Energy: 1.01mJ (on), 2.53mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 779 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
Description: FS4 LOW VCESAT IGBT 650V 75A TO2
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247-4L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/548ns
Switching Energy: 1.01mJ (on), 2.53mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 779 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 469 W
на замовлення 717 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 600.82 грн |
| 10+ | 395.65 грн |
| 100+ | 291.94 грн |
| 500+ | 246 грн |
| NVD5862NT4G-VF01 |
|
Виробник: onsemi
Description: NFET DPAK 60V 98A 5.7MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Power Dissipation (Max): 4.1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: NFET DPAK 60V 98A 5.7MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 48A, 10V
Power Dissipation (Max): 4.1W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SMBT1230LT1G |
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 10.64 грн |
| 3EZ13D5 |
|
Виробник: onsemi
Description: DIODE ZENER 13V 3W DO41
Description: DIODE ZENER 13V 3W DO41
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2404+ | 9.45 грн |
| MC1066DBR2 |
|
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 310+ | 68.65 грн |
| 1N6292AG |
|
Виробник: onsemi
Description: TVS DIODE 64.1VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 64.1VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 4118 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1519+ | 14.52 грн |
| 1N6292ARL4G |
|
Виробник: onsemi
Description: TVS DIODE 64.1VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 64.1VWM 103VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 8799 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1374+ | 15.97 грн |
| FAN6292MX |
|
Виробник: onsemi
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
товар відсутній
| FAN6292MX |
|
Виробник: onsemi
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
товар відсутній
| FAN6292BMX |
|
Виробник: onsemi
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
товар відсутній
| FAN6292BMX |
|
Виробник: onsemi
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 0V ~ 6V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 6V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 8 mA
DigiKey Programmable: Not Verified
на замовлення 6854 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 485+ | 45.06 грн |
| 74ALVC16245MTD |
|
Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Bulk
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
на замовлення 7600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 242+ | 91.3 грн |
| NSR0240MXT5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 200MA 2X2DFN
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFN (1x0.6)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA 2X2DFN
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFN (1x0.6)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
на замовлення 1038837 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5657+ | 3.49 грн |
| NSR02L40MX2WT5G |
|
Виробник: onsemi
Description: DIODE SCHOTT 40V 200MA 2-X2DFNW
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Description: DIODE SCHOTT 40V 200MA 2-X2DFNW
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 4.93 грн |
| 16000+ | 4.35 грн |
| 24000+ | 4.2 грн |
| FDD8870-F085 |
|
Виробник: onsemi
Description: FDD8870 - N-CHANNEL POWERTRENCH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
Description: FDD8870 - N-CHANNEL POWERTRENCH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
товар відсутній
| 5HN01M-TL-H |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Description: MOSFET N-CH 50V 100MA 3MCP
на замовлення 54300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3206+ | 6.72 грн |
| LV5069JA-AH |
|
Виробник: onsemi
Description: IC REG CTRLR BUCK 16SSOP
Description: IC REG CTRLR BUCK 16SSOP
на замовлення 702540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 292+ | 76.93 грн |