Технічний опис AFGHL25T120RH ON Semiconductor
Description: 1200V/25A FSII IGBT (NO FRD) TO2, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 159 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/118ns, Switching Energy: 1.94mJ (on), 770µJ (off), Test Condition: 600V, 25A, 5Ohm, 15V, Gate Charge: 189 nC, Grade: Automotive, Part Status: Obsolete, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 261 W, Qualification: AEC-Q101.
Інші пропозиції AFGHL25T120RH
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AFGHL25T120RH | Виробник : onsemi |
Description: 1200V/25A FSII IGBT (NO FRD) TO2 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 159 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/118ns Switching Energy: 1.94mJ (on), 770µJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 189 nC Grade: Automotive Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 261 W Qualification: AEC-Q101 |
товар відсутній |
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AFGHL25T120RH | Виробник : onsemi |
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товар відсутній |