| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTMFS4C805NAT3G | onsemi | Description: TRENCH 6 30V NCH |
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NTMFS4C805NAT3G | onsemi | Description: TRENCH 6 30V NCH |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C028NT1G | onsemi |
 Description: MOSFET N-CH 30V 16.4A/52A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 4.73mOhm @ 30A, 10V Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C028NT1G | onsemi |
Description: MOSFET N-CH 30V 16.4A/52A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 4.73mOhm @ 30A, 10V Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
на замовлення 7300 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C022NT1G | onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V |
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NTMFS4C022NT1G | onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V |
на замовлення 1225 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C09NAT1G | onsemi |
Description: MOSFET N-CH 30V 9A/52A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
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NTMFS4C09NAT1G | onsemi |
Description: MOSFET N-CH 30V 9A/52A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
на замовлення 1497 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C50NT1G | onsemi |
Description: 30 V, 46A, SINGLE N-CHANNEL, POW |
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NTMFS4C35NT1G | onsemi |
Description: MOSFET N-CH 30V 12.4A 5DFN |
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NTMFS4C35NT1G | onsemi |
Description: MOSFET N-CH 30V 12.4A 5DFN |
на замовлення 1477 шт: термін постачання 21-31 дні (днів) |
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| NTMFS4C800NT1G | onsemi | Description: MOSFET N-CH 30V 69A SO8FL |
на замовлення 1988 шт: термін постачання 21-31 дні (днів) |
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NTMFS4C01NT1G | onsemi |
Description: MOSFET N-CH 30V 47A/303A 5DFN |
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NTMFS4C302NT3G | onsemi |
Description: NFET SO8FL 30V 1.15MO Packaging: Tray Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 30A, 10V Power Dissipation (Max): 3.13W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5780 pF @ 15 V |
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NTMFS4C822NAT1G | onsemi | Description: TRENCH 6 30V NCH |
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| NTMFS4C808NAT3G | onsemi | Description: TRENCH 6 30V NCH |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| NTMFS4C810NAT1G | onsemi | Description: TRENCH 6 30V NCH |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVTYS004N04CLTWG | onsemi |
Description: T6 40V N-CH LL IN LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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CAT1023WI25 | onsemi |
Description: CAT1023 - SUPERVISORY CIRCUIT WI Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 2.55V Supplier Device Package: 8-SOIC Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CAT1023ZI25 | onsemi |
Description: CAT1023 - SUPERVISORY CIRCUIT WI Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active High/Active Low Operating Temperature: -40°C ~ 85°C Number of Voltages Monitored: 1 Reset Timeout: 130ms Minimum Voltage - Threshold: 2.55V Supplier Device Package: 8-MSOP Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3727 шт: термін постачання 21-31 дні (днів) |
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| SVC201SPA | onsemi |
Description: SILICON VARACTOR DIODE Packaging: Bulk Part Status: Active |
на замовлення 97142 шт: термін постачання 21-31 дні (днів) |
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MCR69-003 | onsemi |
Description: THYRISTOR SCR 25A 100V TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 60Hz Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Obsolete Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 100 V |
на замовлення 1889 шт: термін постачання 21-31 дні (днів) |
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FPF1006 | onsemi |
Description: BUFFER/INVERTER BASED PERIPHERAL Packaging: Bulk Part Status: Active |
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NCV8402STCT1G | onsemi |
Description: IC PWR MOSFET N-CH SOT223 Features: Auto Restart Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 165mOhm Input Type: Non-Inverting Voltage - Load: 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223 (TO-261) Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Discontinued at Digi-Key |
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NCV8402STCT3G | onsemi |
Description: IC PWR MOSFET N-CH SOT223 Features: Auto Restart Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 165mOhm Input Type: Non-Inverting Voltage - Load: 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223 (TO-261) Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Discontinued at Digi-Key |
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NCV7327MW0R2G | onsemi |
Description: IC TRANSCEIVER FULL 1/1 8DFNW |
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NCV7327MW0R2G | onsemi |
Description: IC TRANSCEIVER FULL 1/1 8DFNW |
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NCV7329MW0R2G | onsemi |
Description: IC TRANSCEIVER 1/1 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 5V ~ 18V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LIN Supplier Device Package: 8-DFNW (3x3) Receiver Hysteresis: 175 mV Part Status: Active |
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NCV7329MW0R2G | onsemi |
Description: IC TRANSCEIVER 1/1 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 5V ~ 18V Number of Drivers/Receivers: 1/1 Data Rate: 20kbps Protocol: LIN Supplier Device Package: 8-DFNW (3x3) Receiver Hysteresis: 175 mV Part Status: Active |
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NCV7344MW3R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8DFN |
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NCV7344MW3R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8DFN |
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NCV7344AD10R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC |
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NCV7344AD10R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC |
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NCV7349D10R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC |
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NCV7344AMW0R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8DFNW |
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NCV7344AMW0R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8DFNW |
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NCV7344D10R2G | onsemi |
Description: IC TRANSCEIVER 1/1 8SOIC |
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NCV7340D13R2G | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC |
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NCV7380DG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC |
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FQA44N30 | onsemi |
Description: MOSFET N-CH 300V 43.5A TO3PN |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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BSS123-F169 | onsemi |
Description: MOSFET N-CH SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
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G785-BSS123 | onsemi |
Description: MOSFET N-CH SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V |
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NC7SP38P5X | onsemi |
Description: IC GATE NAND OD 1CH 2-INP SC70-5 |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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NC7SP38P5X | onsemi |
Description: IC GATE NAND OD 1CH 2-INP SC70-5 |
на замовлення 44100 шт: термін постачання 21-31 дні (днів) |
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NC7SVL08FHX | onsemi |
Description: IC GATE AND 1CH 2-INP 6MICROPAK2 |
на замовлення 4664 шт: термін постачання 21-31 дні (днів) |
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ESD5581MXT5G | onsemi |
Description: TVS DIODE 5VWM 12VC 2X3DFN Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 12V Power Line Protection: No Part Status: Active |
на замовлення 24747 шт: термін постачання 21-31 дні (днів) |
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| MM74HC245AWMX-L22178 | onsemi | Description: IC BUFFER NON-INVERT 6V 20SOIC |
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MTD20P03HDL1 | onsemi |
Description: P-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
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NRVBA1H100NT3G | onsemi |
Description: DIODE SCHOTTKY 1A 100V 1201 SMA2 |
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NRVBA1H100NT3G | onsemi |
Description: DIODE SCHOTTKY 1A 100V 1201 SMA2 |
на замовлення 2010 шт: термін постачання 21-31 дні (днів) |
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FDD6685-G | onsemi |
Description: MOSFET N-CH 60V SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V |
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CS403GT5 | onsemi |
Description: IC REG LINEAR FIXED LDO REG Packaging: Bulk Part Status: Active |
на замовлення 23050 шт: термін постачання 21-31 дні (днів) |
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CS403GTHA5 | onsemi |
Description: IC REG LINEAR FIXED LDO REG Packaging: Bulk Part Status: Active |
на замовлення 7050 шт: термін постачання 21-31 дні (днів) |
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NTMD3N08LR2 | onsemi |
Description: MOSFET PWR N-CHAN DUAL 80V 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Rds On (Max) @ Id, Vgs: 215mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
на замовлення 114190 шт: термін постачання 21-31 дні (днів) |
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NTMD6601NR2G | onsemi |
Description: MOSFET 2N-CH 80V 1.1A 8SOIC |
на замовлення 60595 шт: термін постачання 21-31 дні (днів) |
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MC78M20CT | onsemi |
Description: IC REG LINEAR 20V 500MA TO220AB |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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FDMS86380-F085 | onsemi |
Description: MOSFET N-CH 80V 50A POWER56 |
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FDMS86380-F085 | onsemi |
Description: MOSFET N-CH 80V 50A POWER56 |
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FDMS86380-F085 | onsemi |
Description: MOSFET N-CH 80V 50A POWER56 |
товар відсутній |
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| FDWS86380-F085 | onsemi |
Description: MOSFET N-CH 80V 50A POWER56 |
товар відсутній |
| NTMFS4C805NAT3G |
Виробник: onsemi
Description: TRENCH 6 30V NCH
Description: TRENCH 6 30V NCH
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.83 грн |
| 10+ | 91.55 грн |
| 100+ | 71.39 грн |
| 500+ | 55.35 грн |
| 1000+ | 43.7 грн |
| 2000+ | 40.79 грн |
| NTMFS4C028NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 4.73mOhm @ 30A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 4.73mOhm @ 30A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 35.03 грн |
| 3000+ | 31.48 грн |
| NTMFS4C028NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 4.73mOhm @ 30A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 16.4A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 4.73mOhm @ 30A, 10V
Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
на замовлення 7300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.07 грн |
| 10+ | 66.35 грн |
| 100+ | 51.71 грн |
| 500+ | 40.09 грн |
| NTMFS4C022NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
товар відсутній
| NTMFS4C022NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Description: MOSFET N-CH 30V 30A/136A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
на замовлення 1225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.93 грн |
| 10+ | 66.2 грн |
| 100+ | 51.48 грн |
| 500+ | 40.95 грн |
| NTMFS4C09NAT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
товар відсутній
| NTMFS4C09NAT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 9A/52A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
на замовлення 1497 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.73 грн |
| 10+ | 56.58 грн |
| 100+ | 44.04 грн |
| 500+ | 35.03 грн |
| NTMFS4C35NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 12.4A 5DFN
Description: MOSFET N-CH 30V 12.4A 5DFN
на замовлення 1477 шт:
термін постачання 21-31 дні (днів)| NTMFS4C800NT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 69A SO8FL
Description: MOSFET N-CH 30V 69A SO8FL
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)| NTMFS4C302NT3G |
|
Виробник: onsemi
Description: NFET SO8FL 30V 1.15MO
Packaging: Tray
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5780 pF @ 15 V
Description: NFET SO8FL 30V 1.15MO
Packaging: Tray
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5780 pF @ 15 V
товар відсутній
| NTMFS4C808NAT3G |
Виробник: onsemi
Description: TRENCH 6 30V NCH
Description: TRENCH 6 30V NCH
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| NTMFS4C810NAT1G |
Виробник: onsemi
Description: TRENCH 6 30V NCH
Description: TRENCH 6 30V NCH
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| NVTYS004N04CLTWG |
|
Виробник: onsemi
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| CAT1023WI25 |
|
Виробник: onsemi
Description: CAT1023 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Description: CAT1023 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 346+ | 61.3 грн |
| CAT1023ZI25 |
|
Виробник: onsemi
Description: CAT1023 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V
Supplier Device Package: 8-MSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: CAT1023 - SUPERVISORY CIRCUIT WI
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active High/Active Low
Operating Temperature: -40°C ~ 85°C
Number of Voltages Monitored: 1
Reset Timeout: 130ms Minimum
Voltage - Threshold: 2.55V
Supplier Device Package: 8-MSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3727 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 332+ | 68.67 грн |
| SVC201SPA |
|
на замовлення 97142 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2219+ | 10.68 грн |
| MCR69-003 |
|
Виробник: onsemi
Description: THYRISTOR SCR 25A 100V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
Description: THYRISTOR SCR 25A 100V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
на замовлення 1889 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 807+ | 26.06 грн |
| NCV8402STCT1G |
Виробник: onsemi
Description: IC PWR MOSFET N-CH SOT223
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Discontinued at Digi-Key
Description: IC PWR MOSFET N-CH SOT223
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Discontinued at Digi-Key
товар відсутній
| NCV8402STCT3G |
Виробник: onsemi
Description: IC PWR MOSFET N-CH SOT223
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Discontinued at Digi-Key
Description: IC PWR MOSFET N-CH SOT223
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Discontinued at Digi-Key
товар відсутній
| NCV7329MW0R2G |
|
Виробник: onsemi
Description: IC TRANSCEIVER 1/1 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: 8-DFNW (3x3)
Receiver Hysteresis: 175 mV
Part Status: Active
Description: IC TRANSCEIVER 1/1 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: 8-DFNW (3x3)
Receiver Hysteresis: 175 mV
Part Status: Active
товар відсутній
| NCV7329MW0R2G |
|
Виробник: onsemi
Description: IC TRANSCEIVER 1/1 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: 8-DFNW (3x3)
Receiver Hysteresis: 175 mV
Part Status: Active
Description: IC TRANSCEIVER 1/1 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 5V ~ 18V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: 8-DFNW (3x3)
Receiver Hysteresis: 175 mV
Part Status: Active
товар відсутній
| FQA44N30 |
|
Виробник: onsemi
Description: MOSFET N-CH 300V 43.5A TO3PN
Description: MOSFET N-CH 300V 43.5A TO3PN
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)| BSS123-F169 |
Виробник: onsemi
Description: MOSFET N-CH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET N-CH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
товар відсутній
| G785-BSS123 |
Виробник: onsemi
Description: MOSFET N-CH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
Description: MOSFET N-CH SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V
товар відсутній
| NC7SP38P5X |
|
Виробник: onsemi
Description: IC GATE NAND OD 1CH 2-INP SC70-5
Description: IC GATE NAND OD 1CH 2-INP SC70-5
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.27 грн |
| 6000+ | 7.48 грн |
| 15000+ | 7 грн |
| 30000+ | 6.41 грн |
| NC7SP38P5X |
|
Виробник: onsemi
Description: IC GATE NAND OD 1CH 2-INP SC70-5
Description: IC GATE NAND OD 1CH 2-INP SC70-5
на замовлення 44100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.47 грн |
| 14+ | 21.38 грн |
| 25+ | 19.57 грн |
| 100+ | 13.67 грн |
| 250+ | 12.38 грн |
| 500+ | 10.25 грн |
| 1000+ | 7.56 грн |
| NC7SVL08FHX |
|
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP 6MICROPAK2
Description: IC GATE AND 1CH 2-INP 6MICROPAK2
на замовлення 4664 шт:
термін постачання 21-31 дні (днів)| ESD5581MXT5G |
|
Виробник: onsemi
Description: TVS DIODE 5VWM 12VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 12VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: No
Part Status: Active
на замовлення 24747 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.6 грн |
| 18+ | 16.46 грн |
| 100+ | 8.72 грн |
| 500+ | 5.38 грн |
| 1000+ | 3.66 грн |
| 2000+ | 3.3 грн |
| 5000+ | 2.82 грн |
| NRVBA1H100NT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 1A 100V 1201 SMA2
Description: DIODE SCHOTTKY 1A 100V 1201 SMA2
на замовлення 2010 шт:
термін постачання 21-31 дні (днів)| FDD6685-G |
Виробник: onsemi
Description: MOSFET N-CH 60V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V
Description: MOSFET N-CH 60V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V
товар відсутній
| CS403GT5 |
|
на замовлення 23050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 485+ | 43.69 грн |
| CS403GTHA5 |
|
на замовлення 7050 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 485+ | 43.69 грн |
| NTMD3N08LR2 |
|
Виробник: onsemi
Description: MOSFET PWR N-CHAN DUAL 80V 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Rds On (Max) @ Id, Vgs: 215mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET PWR N-CHAN DUAL 80V 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Rds On (Max) @ Id, Vgs: 215mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
на замовлення 114190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1374+ | 16.79 грн |
| NTMD6601NR2G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 80V 1.1A 8SOIC
Description: MOSFET 2N-CH 80V 1.1A 8SOIC
на замовлення 60595 шт:
термін постачання 21-31 дні (днів)