| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
2N6667 | onsemi |
 Description: TRANS PNP DARL 60V 10A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товар відсутній |
|
 |
MMPQ2222AR1 | onsemi |
Description: TRANS 4NPN 40V 0.5A 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 4 NPN (Quad) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 350MHz Supplier Device Package: 16-SOIC Part Status: Obsolete |
товар відсутній |
|
 |
NTD80N02-001 | onsemi |
Description: MOSFET N-CH 24V 80A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V |
товар відсутній |
|
 |
NTD80N02T4 | onsemi |
Description: MOSFET N-CH 24V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V |
товар відсутній |
|
|
|
NTP75N06 | onsemi |
Description: MOSFET N-CH 60V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V |
товар відсутній |
|
 |
MMBT2222ALT1 | onsemi |
Description: TRANS NPN 40V 600MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 225 mW |
товар відсутній |
|
 |
MMBT2222LT1 | onsemi |
 Description: TRANS NPN 30V 600MA SOT23Packaging: Cut Tape (CT) |
товар відсутній |
|
 |
MMBT2369ALT1 | onsemi |
Description: TRANS SS GP NPN 15V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
 |
2N3904RLRA | onsemi |
Description: TRANS NPN 40V 0.2A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товар відсутній |
|
|
|
2N3906RLRA | onsemi |
Description: TRANS PNP 40V 0.2A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товар відсутній |
|
 |
2N4401RLRA | onsemi |
Description: TRANS NPN 40V 0.6A TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
2N4403RLRA | onsemi |
Description: TRANS PNP 40V 0.6A TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
 |
MMBT4126LT1 | onsemi |
Description: TRANS SS GP PNP 25V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
 |
MMBT2222AWT1 | onsemi |
Description: TRANS NPN 40V 600MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW |
товар відсутній |
|
|
|
MMBT2907AWT1 | onsemi |
Description: TRANS SS GP PNP 60V SOT323 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBT3906WT1 | onsemi |
Description: TRANS SS GP PNP 40V SOT323 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBT5087LT1 | onsemi |
Description: TRANS PNP 50V 50MA SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBT5088LT1 | onsemi |
Description: TRANS NPN 30V 50MA SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBT5089LT1 | onsemi |
Description: TRANS NPN 25V 50MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 225 mW |
товар відсутній |
|
|
|
MPS2222ARLRA | onsemi |
Description: TRANS NPN SS GP 40V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPSA06RLRA | onsemi |
Description: TRANS NPN SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
PN2222ARLRA | onsemi |
Description: TRANS SS GP NPN 600MA 40V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
PN2907ARLRA | onsemi |
Description: TRANS PNP 60V 0.6A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
товар відсутній |
|
|
|
MPS2907ARLRA | onsemi |
Description: TRANS PNP SS GP 60V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBTA05LT1 | onsemi |
Description: TRANS DRIVER SS NPN 60V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
 |
MPSA56RLRA | onsemi |
Description: TRANS PNP SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPSA13RLRA | onsemi |
Description: TRANS NPN DARL 30V 0.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товар відсутній |
|
|
|
MMBT5550LT1 | onsemi |
Description: TRANS SS NPN 140V HV SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBTA13LT1 | onsemi |
Description: TRANS SS DARL NPN 30V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBTA14LT1 | onsemi |
Description: TRANS SS DARL NPN 30V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW |
товар відсутній |
|
|
|
MMBTA55LT1 | onsemi |
Description: TRANS DRIVER SS PNP 60V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBTA63LT1 | onsemi |
Description: TRANS SS DARL PNP 30V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBTA64LT1 | onsemi |
Description: TRANS SS DARL PNP 30V SOT23 Packaging: Cut Tape (CT) |
товар відсутній |
|
 |
MPS4124RLRA | onsemi |
Description: TRANS NPN SS GP 25V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPS4126RLRA | onsemi |
Description: TRANS PNP 25V 0.2A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Frequency - Transition: 170MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
товар відсутній |
|
|
|
MPSA55RLRA | onsemi |
Description: TRANS PNP SS GP 60V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
2N7002LT1 | onsemi |
Description: MOSFET N-CH 60V 115MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
товар відсутній |
|
|
|
MPSA27RLRA | onsemi |
Description: TRANS NPN DARL SS 60V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
 |
MPSA29RLRP | onsemi |
Description: TRANS NPN DARL SS 100V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPSA42RLRA | onsemi |
Description: TRANS NPN SS GP 500MA 300V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPSA92RLRA | onsemi |
Description: TRANS PNP SS GP HV 300V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
2N5551RLRA | onsemi |
Description: TRANS NPN 160V 0.6A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
товар відсутній |
|
 |
MBT3906DW1T1 | onsemi |
Description: TRANS 2PNP 40V 0.2A SOT363 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
 |
MBT3946DW1T1 | onsemi |
Description: TRANS DUAL GP 200MA 40V SOT363 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBTH10LT1 | onsemi |
Description: TRANS SS VHF NPN 25V SOT23 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPSH10RLRA | onsemi |
Description: TRANS NPN VHF/UHF SS 25V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBT6427LT1 | onsemi |
Description: TRANS SS DARL NPN 40V SOT23 Packaging: Cut Tape (CT) |
товар відсутній |
|
|
|
MMBT6429LT1 | onsemi |
Description: TRANS SS NPN 45V LN SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Frequency - Transition: 700MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
товар відсутній |
|
|
|
MMBF170LT1 | onsemi |
Description: MOSFET N-CH 60V 500MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
товар відсутній |
|
|
|
MPS8098RLRA | onsemi |
Description: TRANS NPN 60V 0.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
товар відсутній |
|
|
|
MPS8099RLRA | onsemi |
Description: TRANS NPN SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPS8598RLRA | onsemi |
Description: TRANS PNP 60V 0.5A TO92 |
товар відсутній |
|
|
|
MPS8599RLRA | onsemi |
Description: TRANS PNP SS GP 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPS751RLRA | onsemi |
Description: TRANS PNP SS 60V HI CURRENT TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MMBT918LT1 | onsemi |
Description: TRANS SS VHF NPN 15V SOT23 Packaging: Cut Tape (CT) |
товар відсутній |
|
|
|
2N6520RLRA | onsemi |
Description: TRANS PNP 350V 0.5A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
товар відсутній |
|
|
|
MMBT8099LT1 | onsemi |
Description: TRANS NPN 80V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 225 mW |
товар відсутній |
|
|
|
MPSA44RLRA | onsemi |
Description: TRANS NPN SS GP 400V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
 |
MPSW06RLRA | onsemi |
Description: TRANS NPN SS GP 1W 80V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
|
|
|
MPSW42RLRA | onsemi |
Description: TRANS NPN SS 1W 300V TO92 Packaging: Cut Tape (CT) Part Status: Obsolete |
товар відсутній |
| 2N6667 |
|
Виробник: onsemi
Description: TRANS PNP DARL 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS PNP DARL 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товар відсутній
| MMPQ2222AR1 |
|
Виробник: onsemi
Description: TRANS 4NPN 40V 0.5A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 350MHz
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Description: TRANS 4NPN 40V 0.5A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 350MHz
Supplier Device Package: 16-SOIC
Part Status: Obsolete
товар відсутній
| NTD80N02-001 |
|
Виробник: onsemi
Description: MOSFET N-CH 24V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Description: MOSFET N-CH 24V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
товар відсутній
| NTD80N02T4 |
|
Виробник: onsemi
Description: MOSFET N-CH 24V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Description: MOSFET N-CH 24V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
товар відсутній
| NTP75N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Description: MOSFET N-CH 60V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
товар відсутній
| MMBT2222ALT1 |
|
Виробник: onsemi
Description: TRANS NPN 40V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
Description: TRANS NPN 40V 600MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 225 mW
товар відсутній
| 2N3904RLRA |
|
Виробник: onsemi
Description: TRANS NPN 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
| 2N3906RLRA |
|
Виробник: onsemi
Description: TRANS PNP 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товар відсутній
| MMBT2222AWT1 |
|
Виробник: onsemi
Description: TRANS NPN 40V 600MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
Description: TRANS NPN 40V 600MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 mW
товар відсутній
| MMBT2907AWT1 |
|
Виробник: onsemi
Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBT3906WT1 |
|
Виробник: onsemi
Description: TRANS SS GP PNP 40V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS GP PNP 40V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBT5089LT1 |
|
Виробник: onsemi
Description: TRANS NPN 25V 50MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 225 mW
Description: TRANS NPN 25V 50MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 225 mW
товар відсутній
| PN2222ARLRA |
|
Виробник: onsemi
Description: TRANS SS GP NPN 600MA 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS GP NPN 600MA 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| PN2907ARLRA |
|
Виробник: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
| MMBTA05LT1 |
|
Виробник: onsemi
Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DRIVER SS NPN 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA13RLRA |
|
Виробник: onsemi
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN DARL 30V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товар відсутній
| MMBT5550LT1 |
|
Виробник: onsemi
Description: TRANS SS NPN 140V HV SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS NPN 140V HV SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTA13LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTA14LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Description: TRANS SS DARL NPN 30V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 10mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
товар відсутній
| MMBTA55LT1 |
|
Виробник: onsemi
Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DRIVER SS PNP 60V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTA63LT1 |
|
Виробник: onsemi
Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS DARL PNP 30V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPS4126RLRA |
|
Виробник: onsemi
Description: TRANS PNP 25V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS PNP 25V 0.2A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
товар відсутній
| 2N7002LT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
товар відсутній
| MPSA27RLRA |
|
Виробник: onsemi
Description: TRANS NPN DARL SS 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN DARL SS 60V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA29RLRP |
|
Виробник: onsemi
Description: TRANS NPN DARL SS 100V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN DARL SS 100V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA42RLRA |
|
Виробник: onsemi
Description: TRANS NPN SS GP 500MA 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN SS GP 500MA 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSA92RLRA |
|
Виробник: onsemi
Description: TRANS PNP SS GP HV 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS PNP SS GP HV 300V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| 2N5551RLRA |
|
Виробник: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
товар відсутній
| MBT3906DW1T1 |
|
Виробник: onsemi
Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS 2PNP 40V 0.2A SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MBT3946DW1T1 |
|
Виробник: onsemi
Description: TRANS DUAL GP 200MA 40V SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS DUAL GP 200MA 40V SOT363
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBTH10LT1 |
|
Виробник: onsemi
Description: TRANS SS VHF NPN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS SS VHF NPN 25V SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MPSH10RLRA |
|
Виробник: onsemi
Description: TRANS NPN VHF/UHF SS 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN VHF/UHF SS 25V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| MMBT6429LT1 |
|
Виробник: onsemi
Description: TRANS SS NPN 45V LN SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS SS NPN 45V LN SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
товар відсутній
| MMBF170LT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
товар відсутній
| MPS8098RLRA |
|
Виробник: onsemi
Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS NPN 60V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
товар відсутній
| MPS751RLRA |
|
Виробник: onsemi
Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS PNP SS 60V HI CURRENT TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній
| 2N6520RLRA |
|
Виробник: onsemi
Description: TRANS PNP 350V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS PNP 350V 0.5A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
товар відсутній
| MMBT8099LT1 |
|
Виробник: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
Description: TRANS NPN 80V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 225 mW
товар відсутній
| MPSW06RLRA |
|
Виробник: onsemi
Description: TRANS NPN SS GP 1W 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: TRANS NPN SS GP 1W 80V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
товар відсутній