| Фото | Назва | Виробник | Інформація |
Доступність |
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MJD210TF | onsemi |
 Description: TRANS PNP 25V 5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
товару немає в наявності |
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KSH210TM | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
товару немає в наявності |
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KSH210TM | onsemi |
Description: TRANS PNP 25V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V Frequency - Transition: 65MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1.4 W |
товару немає в наявності |
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KSA539CYTA | onsemi |
Description: TRANS PNP 45V 0.2A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 400 mW |
товару немає в наявності |
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KSA539CYTA | onsemi |
Description: TRANS PNP 45V 0.2A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 400 mW |
товару немає в наявності |
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NCP7808TG | onsemi |
Description: IC REG LINEAR 8V 1A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 8V PSRR: 72dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
на замовлення 14036 шт: термін постачання 21-31 дні (днів) |
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MJD117T4 | onsemi |
Description: TRANS DARL PNP 2A 100V DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Frequency - Transition: 25MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 20 W |
товару немає в наявності |
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1N5822 | onsemi |
Description: DIODE SCHOTTKY 40V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 190pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
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1N5822 | onsemi |
Description: DIODE SCHOTTKY 40V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 190pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
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BZX85C18 | onsemi |
Description: DIODE ZENER 18V 1W DO204AL Tolerance: ±6% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V |
товару немає в наявності |
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CD4066BCN | onsemi |
Description: IC QUAD BILATERAL SWITCH 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C On-State Resistance (Max): 240Ohm -3db Bandwidth: 40MHz Supplier Device Package: 14-MDIP Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 5Ohm Channel Capacitance (CS(off), CD(off)): 8pF Number of Circuits: 4 |
товару немає в наявності |
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CD4066BCSJ | onsemi |
Description: IC QUAD BILATERAL SWITCH 14SOP Packaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C On-State Resistance (Max): 240Ohm -3db Bandwidth: 40MHz Supplier Device Package: 14-SOP Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 5Ohm Channel Capacitance (CS(off), CD(off)): 8pF Number of Circuits: 4 |
товару немає в наявності |
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CD4066BCSJX | onsemi |
Description: IC QUAD BILATERAL SWITCH 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C On-State Resistance (Max): 240Ohm -3db Bandwidth: 40MHz Supplier Device Package: 14-SOP Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 5Ohm Channel Capacitance (CS(off), CD(off)): 8pF Number of Circuits: 4 |
товару немає в наявності |
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NOIP1SN0480A-STI | onsemi |
Description: IC CMOS IMAGE SENSOR 1/3.6" BW_ Packaging: Tape & Reel (TR) Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V, 3.3V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 808H x 608V Frames per Second: 120.0 |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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FDSS2407 | onsemi |
Description: MOSFET 2N-CH 62V 3.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.27W Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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FDSS2407 | onsemi |
Description: MOSFET 2N-CH 62V 3.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.27W Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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DM74S374N | onsemi |
Description: IC FF D-TYPE SNGL 8BIT 20DIP Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Non-Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Quiescent (Iq): 110 mA Current - Output High, Low: 6.5mA, 20mA Trigger Type: Positive Edge Clock Frequency: 75 MHz Supplier Device Package: 20-PDIP Number of Bits per Element: 8 |
товару немає в наявності |
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MCR218-4G | onsemi |
 Description: SILICON CONTROLLED RECTIFIER, 8APackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 25 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.8 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 200 V |
на замовлення 8900 шт: термін постачання 21-31 дні (днів) |
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STK672-401 | onsemi |
Description: 2-PHASE STEPPING MOTOR DRIVER Packaging: Bulk |
на замовлення 2133 шт: термін постачання 21-31 дні (днів) |
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NCP136AFCRC080T2G | onsemi |
Description: IC REG LINEAR 0.8V 700MA 6WLCSP Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WLCSP (1.4x0.8) Voltage - Output (Min/Fixed): 0.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.06V @ 700mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NCP136AFCRC080T2G | onsemi |
Description: IC REG LINEAR 0.8V 700MA 6WLCSP Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 700mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 110 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-WLCSP (1.4x0.8) Voltage - Output (Min/Fixed): 0.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.06V @ 700mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NSR15405NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 1.5A 2DSN Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Schottky Capacitance @ Vr, F: 85pF @ 2V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: 2-DSN (1.4x0.6) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A Current - Reverse Leakage @ Vr: 75 µA @ 40 V |
товару немає в наявності |
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NSR15405NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 1.5A 2DSN Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Schottky Capacitance @ Vr, F: 85pF @ 2V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: 2-DSN (1.4x0.6) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A Current - Reverse Leakage @ Vr: 75 µA @ 40 V |
товару немає в наявності |
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| NSR15405NXT5G | onsemi |
Description: NSR15405N - SCHOTTKY BARRIER DIO Packaging: Bulk Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Schottky Capacitance @ Vr, F: 85pF @ 2V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: 2-DSN (1.4x0.6) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A Current - Reverse Leakage @ Vr: 75 µA @ 40 V |
на замовлення 29170 шт: термін постачання 21-31 дні (днів) |
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1N5408G | onsemi |
Description: DIODE GEN PURP 1KV 3A AXIAL Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
на замовлення 17887 шт: термін постачання 21-31 дні (днів) |
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SBT700-06RH-1E | onsemi |
Description: DIODE ARR SCHOTT 60V 70A TO3PF-3 Packaging: Tube Package / Case: SC-94 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: TO-3PF-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
товару немає в наявності |
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NB3N3010BDR2G | onsemi |
Description: IC CLOCK GENERATOR PLL 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 12.288MHz Input: Clock Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: USB Applications Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
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NB3N3010BDR2G | onsemi |
Description: IC CLOCK GENERATOR PLL 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 12.288MHz Input: Clock Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Main Purpose: USB Applications Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
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NB3N3011DTR2G | onsemi |
Description: IC CLOCK GENERATOR 8TSSOP Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVPECL Frequency - Max: 120MHz Type: Clock Generator Input: Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 8-TSSOP PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 34826 шт: термін постачання 21-31 дні (днів) |
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NB3N3011DTG | onsemi |
Description: IC CLOCK GENERATOR 8TSSOP Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVPECL Frequency - Max: 120MHz Type: Clock Generator Input: Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 8-TSSOP PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 33678 шт: термін постачання 21-31 дні (днів) |
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NB3N3001DTR2G | onsemi |
Description: IC CLOCK GENERATOR 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVPECL Frequency - Max: 212.5MHz Type: Clock Generator Input: Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 8-TSSOP PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
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NB3N3001DTG | onsemi |
Description: IC CLOCK GENERATOR 8TSSOP Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVPECL Frequency - Max: 212.5MHz Type: Clock Generator Input: Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:1 Differential - Input:Output: No/Yes Supplier Device Package: 8-TSSOP PLL: Yes Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
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SGS13N60UFDTU | onsemi |
Description: IGBT 600V 13A 45W TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Supplier Device Package: TO-220F-3 Td (on/off) @ 25°C: 20ns/70ns Switching Energy: 85µJ (on), 95µJ (off) Test Condition: 300V, 6.5A, 50Ohm, 15V Gate Charge: 25 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 52 A Power - Max: 45 W |
товару немає в наявності |
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| FSQ0565RWDTU | onsemi |
Description: IC REG Packaging: Bulk |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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| FSQ0565RQWDTU | onsemi |
Description: SWITCHING CONTROLLER, CURRENT-MO Packaging: Bulk |
на замовлення 1826 шт: термін постачання 21-31 дні (днів) |
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FSQ0565RQWDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6L Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Frequency - Switching: 48kHz ~ 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: TO-220F-6L (Forming) Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12 V Control Features: Sync Power (Watts): 80 W |
товару немає в наявності |
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FSQ0565RWDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6L Packaging: Tube Package / Case: TO-220-6 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -25°C ~ 85°C (TA) Frequency - Switching: 48kHz ~ 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: TO-220F-6L (Forming) Voltage - Start Up: 12 V Power (Watts): 80 W |
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HUFA76432S3ST | onsemi |
Description: MOSFET N-CH 60V 59A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V |
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MMBT5551 | onsemi |
Description: TRANS NPN 160V 0.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 350 mW |
товару немає в наявності |
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MMBT5551 | onsemi |
Description: TRANS NPN 160V 0.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 350 mW |
товару немає в наявності |
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MMBT5551 | onsemi |
Description: TRANS NPN 160V 0.6A SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 350 mW |
на замовлення 344108 шт: термін постачання 21-31 дні (днів) |
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FFSB2065BDN-F085 | onsemi |
Description: DIODE SIC 650V 23.6A D2PAK-3 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 421pF @ 1V, 100kHz Current - Average Rectified (Io): 23.6A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 840 шт: термін постачання 21-31 дні (днів) |
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FFSH4065BDN-F085 | onsemi |
Description: DIODE SIL CARB 650V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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FFSP4065BDN-F085 | onsemi |
Description: DIODE SIL CARB 650V 20A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 1596 шт: термін постачання 21-31 дні (днів) |
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MM74HC164M | onsemi |
Description: IC SHIFT REG 8BIT PISO 14-SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Supplier Device Package: 14-SOIC Number of Bits per Element: 8 |
на замовлення 33449 шт: термін постачання 21-31 дні (днів) |
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BZX55C10 | onsemi |
Description: DIODE ZENER 10V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V |
товару немає в наявності |
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FQPF9N50YDTU | onsemi |
Description: MOSFET N-CH 500V 5.3A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
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FQPF9N50T | onsemi |
Description: MOSFET N-CH 500V 5.3A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
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FQAF9N50 | onsemi |
Description: MOSFET N-CH 500V 7.2A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 3.6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
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FQB9N50TM | onsemi |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
товару немає в наявності |
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FQB9N50CFTM | onsemi |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 173W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
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FQB9N50CFTM | onsemi |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 173W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
товару немає в наявності |
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FQPF9N50CT | onsemi |
Description: MOSFET N-CH 500V 9A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
товару немає в наявності |
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FQPF9N50C | onsemi |
Description: MOSFET N-CH 500V 9A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
товару немає в наявності |
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FQPF9N50 | onsemi |
Description: MOSFET N-CH 500V 5.3A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
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FQPF9N50CF | onsemi |
Description: MOSFET N-CH 500V 9A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
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MC74LVX04DR2 | onsemi |
Description: IC INVERTER 6CH 1-INP 14SOIC Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.5V ~ 2.4V Input Logic Level - Low: 0.5V ~ 0.8V Max Propagation Delay @ V, Max CL: 9.7ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MC74LVX04MG | onsemi |
Description: IC INVERTER 6CH 1-INP SOEIAJ-14 Packaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 1 Supplier Device Package: SOEIAJ-14 Input Logic Level - High: 1.5V ~ 2.4V Input Logic Level - Low: 0.5V ~ 0.8V Max Propagation Delay @ V, Max CL: 9.7ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 28100 шт: термін постачання 21-31 дні (днів) |
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BD140 | onsemi |
Description: TRANS PNP 80V 1.5A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
товару немає в наявності |
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MC74AC161DG | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-SOIC Voltage - Supply: 2 V ~ 6 V Count Rate: 167 MHz Number of Bits per Element: 4 |
на замовлення 1331 шт: термін постачання 21-31 дні (днів) |
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| MJD210TF |
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Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
| KSH210TM |
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Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
| KSH210TM |
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Виробник: onsemi
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
Description: TRANS PNP 25V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.4 W
товару немає в наявності
| KSA539CYTA |
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Виробник: onsemi
Description: TRANS PNP 45V 0.2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
Description: TRANS PNP 45V 0.2A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
товару немає в наявності
| KSA539CYTA |
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Виробник: onsemi
Description: TRANS PNP 45V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
Description: TRANS PNP 45V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 400 mW
товару немає в наявності
| NCP7808TG |
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Виробник: onsemi
Description: IC REG LINEAR 8V 1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 8V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 8V 1A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 8V
PSRR: 72dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 14036 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1275+ | 16.55 грн |
| MJD117T4 |
|
Виробник: onsemi
Description: TRANS DARL PNP 2A 100V DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
Description: TRANS DARL PNP 2A 100V DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 8mA, 2A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
товару немає в наявності
| 1N5822 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
| 1N5822 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
| BZX85C18 |
|
Виробник: onsemi
Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
товару немає в наявності
| CD4066BCN |
|
Виробник: onsemi
Description: IC QUAD BILATERAL SWITCH 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 240Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: 14-MDIP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 8pF
Number of Circuits: 4
Description: IC QUAD BILATERAL SWITCH 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 240Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: 14-MDIP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 8pF
Number of Circuits: 4
товару немає в наявності
| CD4066BCSJ |
|
Виробник: onsemi
Description: IC QUAD BILATERAL SWITCH 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 240Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 8pF
Number of Circuits: 4
Description: IC QUAD BILATERAL SWITCH 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 240Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 8pF
Number of Circuits: 4
товару немає в наявності
| CD4066BCSJX |
|
Виробник: onsemi
Description: IC QUAD BILATERAL SWITCH 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 240Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 8pF
Number of Circuits: 4
Description: IC QUAD BILATERAL SWITCH 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 240Ohm
-3db Bandwidth: 40MHz
Supplier Device Package: 14-SOP
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Channel Capacitance (CS(off), CD(off)): 8pF
Number of Circuits: 4
товару немає в наявності
| NOIP1SN0480A-STI |
|
Виробник: onsemi
Description: IC CMOS IMAGE SENSOR 1/3.6" BW_
Packaging: Tape & Reel (TR)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 808H x 608V
Frames per Second: 120.0
Description: IC CMOS IMAGE SENSOR 1/3.6" BW_
Packaging: Tape & Reel (TR)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 808H x 608V
Frames per Second: 120.0
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 1376.37 грн |
| FDSS2407 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
| FDSS2407 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 62V 3.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.27W
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
| DM74S374N |
|
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 110 mA
Current - Output High, Low: 6.5mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 75 MHz
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Quiescent (Iq): 110 mA
Current - Output High, Low: 6.5mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 75 MHz
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
товару немає в наявності
| MCR218-4G | |
|
Виробник: onsemi
Description: SILICON CONTROLLED RECTIFIER, 8A
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 200 V
Description: SILICON CONTROLLED RECTIFIER, 8A
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 200 V
на замовлення 8900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 513+ | 40.68 грн |
| STK672-401 |
|
на замовлення 2133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 419.94 грн |
| NCP136AFCRC080T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 0.8V 700MA 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.8V 700MA 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 14.72 грн |
| NCP136AFCRC080T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 0.8V 700MA 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.8V 700MA 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 700mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 110 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-WLCSP (1.4x0.8)
Voltage - Output (Min/Fixed): 0.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.06V @ 700mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.99 грн |
| 10+ | 36 грн |
| 25+ | 33.8 грн |
| 100+ | 24.05 грн |
| 250+ | 20.47 грн |
| 500+ | 19.44 грн |
| 1000+ | 14.6 грн |
| 2500+ | 13.59 грн |
| NSR15405NXT5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
товару немає в наявності
| NSR15405NXT5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1.5A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
товару немає в наявності
| NSR15405NXT5G |
|
Виробник: onsemi
Description: NSR15405N - SCHOTTKY BARRIER DIO
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Description: NSR15405N - SCHOTTKY BARRIER DIO
Packaging: Bulk
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 2V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
на замовлення 29170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2355+ | 8.96 грн |
| 1N5408G |
|
Виробник: onsemi
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 17887 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.64 грн |
| 17+ | 17.74 грн |
| 100+ | 11.98 грн |
| 500+ | 8.73 грн |
| 1000+ | 7.89 грн |
| 2000+ | 7.17 грн |
| 5000+ | 6.28 грн |
| 10000+ | 5.8 грн |
| SBT700-06RH-1E |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 60V 70A TO3PF-3
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: TO-3PF-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE ARR SCHOTT 60V 70A TO3PF-3
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: TO-3PF-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
товару немає в наявності
| NB3N3010BDR2G |
Виробник: onsemi
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
| NB3N3010BDR2G |
Виробник: onsemi
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR PLL 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 12.288MHz
Input: Clock
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Main Purpose: USB Applications
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
| NB3N3011DTR2G |
|
Виробник: onsemi
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 120MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 120MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 34826 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 86+ | 242.72 грн |
| NB3N3011DTG |
|
Виробник: onsemi
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 120MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 120MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 33678 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 86+ | 242.72 грн |
| NB3N3001DTR2G |
|
Виробник: onsemi
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 212.5MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 212.5MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
| NB3N3001DTG |
|
Виробник: onsemi
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 212.5MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVPECL
Frequency - Max: 212.5MHz
Type: Clock Generator
Input: Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/Yes
Supplier Device Package: 8-TSSOP
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товару немає в наявності
| SGS13N60UFDTU |
|
Виробник: onsemi
Description: IGBT 600V 13A 45W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 45 W
Description: IGBT 600V 13A 45W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220F-3
Td (on/off) @ 25°C: 20ns/70ns
Switching Energy: 85µJ (on), 95µJ (off)
Test Condition: 300V, 6.5A, 50Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 45 W
товару немає в наявності
| FSQ0565RWDTU |
|
на замовлення 400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 229+ | 90.33 грн |
| FSQ0565RQWDTU |
|
на замовлення 1826 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 157+ | 131.71 грн |
| FSQ0565RQWDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 80 W
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 80 W
товару немає в наявності
| FSQ0565RWDTU |
|
Виробник: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Start Up: 12 V
Power (Watts): 80 W
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Start Up: 12 V
Power (Watts): 80 W
товару немає в наявності
| HUFA76432S3ST |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
Description: MOSFET N-CH 60V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 59A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 25 V
товару немає в наявності
| MMBT5551 |
|
Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
товару немає в наявності
| MMBT5551 |
|
Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
товару немає в наявності
| MMBT5551 |
|
Виробник: onsemi
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
на замовлення 344108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8435+ | 2.74 грн |
| FFSB2065BDN-F085 |
|
Виробник: onsemi
Description: DIODE SIC 650V 23.6A D2PAK-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 23.6A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIC 650V 23.6A D2PAK-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 421pF @ 1V, 100kHz
Current - Average Rectified (Io): 23.6A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 840 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 416.1 грн |
| 10+ | 342.95 грн |
| 100+ | 285.81 грн |
| 800+ | 236.67 грн |
| FFSH4065BDN-F085 |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 782.31 грн |
| 30+ | 609.98 грн |
| 120+ | 574.09 грн |
| FFSP4065BDN-F085 |
|
Виробник: onsemi
Description: DIODE SIL CARB 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 1596 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 684.04 грн |
| 10+ | 564.74 грн |
| 100+ | 470.61 грн |
| 800+ | 389.69 грн |
| MM74HC164M |
|
Виробник: onsemi
Description: IC SHIFT REG 8BIT PISO 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
Description: IC SHIFT REG 8BIT PISO 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
на замовлення 33449 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.7 грн |
| 10+ | 41.84 грн |
| 55+ | 29.89 грн |
| 110+ | 24.83 грн |
| 275+ | 21.42 грн |
| 550+ | 19.36 грн |
| 1045+ | 17.48 грн |
| 2530+ | 15.74 грн |
| 5005+ | 14.65 грн |
| BZX55C10 |
|
Виробник: onsemi
Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Description: DIODE ZENER 10V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
товару немає в наявності
| FQPF9N50YDTU |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 5.3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товару немає в наявності
| FQPF9N50T |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товару немає в наявності
| FQAF9N50 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 7.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 3.6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 7.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 3.6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товару немає в наявності
| FQB9N50TM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товару немає в наявності
| FQB9N50CFTM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
| FQB9N50CFTM |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
| FQPF9N50CT |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
| FQPF9N50C |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
| FQPF9N50 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Description: MOSFET N-CH 500V 5.3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 730mOhm @ 2.65A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товару немає в наявності
| FQPF9N50CF |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
товару немає в наявності
| MC74LVX04DR2 |
|
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 9.7ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 9.7ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3806+ | 5.52 грн |
| MC74LVX04MG |
|
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 9.7ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP SOEIAJ-14
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 9.7ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 28100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1110+ | 18.62 грн |
| BD140 |
|
Виробник: onsemi
Description: TRANS PNP 80V 1.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS PNP 80V 1.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
товару немає в наявності
| MC74AC161DG |
|
Виробник: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Count Rate: 167 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 6 V
Count Rate: 167 MHz
Number of Bits per Element: 4
на замовлення 1331 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1331+ | 20 грн |