Фото | Назва | Виробник | Інформація |
Доступність |
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LF351MX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C Current - Supply: 2.3mA Slew Rate: 13V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 50 pA Voltage - Input Offset: 5 mV Supplier Device Package: 8-SOP Number of Circuits: 1 |
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NGTB40N120IHLWG | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/360ns Switching Energy: 1.4mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 420 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 320 A Power - Max: 260 W |
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KSB1015YTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Frequency - Transition: 9MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 25 W |
на замовлення 1654 шт: термін постачання 21-31 дні (днів) |
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MM74HC273N | onsemi |
![]() Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Non-Inverted Mounting Type: Through Hole Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 78 MHz Input Capacitance: 7 pF Supplier Device Package: 20-PDIP Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF Number of Bits per Element: 8 |
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FAN73833M | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 11V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA DigiKey Programmable: Not Verified |
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HGTG40N60B3 | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 47ns/170ns Switching Energy: 1.05mJ (on), 800µJ (off) Test Condition: 480V, 40A, 3Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 330 A Power - Max: 290 W |
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74ALVC132MTCX | onsemi |
![]() Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.3V ~ 2.2V Input Logic Level - Low: 0.25V ~ 0.8V Max Propagation Delay @ V, Max CL: 3.8ns @ 3.3V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 40 µA |
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74ALVC132M | onsemi |
![]() Features: Schmitt Trigger Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 1.3V ~ 2.2V Input Logic Level - Low: 0.25V ~ 0.8V Max Propagation Delay @ V, Max CL: 3.8ns @ 3.3V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 40 µA |
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EMI1051FCT5G | onsemi |
Description: EMI FILTER WITH ESD PROTECTION Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 80pF @ 1MHz Current - Peak Pulse (10/1000µs): 22.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 3-DSN (0.76x0.34) Bidirectional Channels: 2 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: No |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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EMI1051FCT5G | onsemi |
Description: EMI FILTER WITH ESD PROTECTION Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 80pF @ 1MHz Current - Peak Pulse (10/1000µs): 22.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 3-DSN (0.76x0.34) Bidirectional Channels: 2 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 10V Power Line Protection: No |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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BZX84C4V3LT3 | onsemi |
![]() Tolerance: ±7% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23-3 (TO-236) Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
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SZBZX84C8V2ET3G | onsemi |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C8V2ET3G | onsemi |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NOIX1SE032KB-GTI | onsemi |
![]() Packaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 6580H x 4935V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 35 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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NOIX1SE030KB-GTI | onsemi |
![]() Packaging: Tray Package / Case: 251-CPGA Type: CMOS Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 5460H x 5460V Supplier Device Package: 251-CPGA (44.4x37.25) Frames per Second: 31 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CAT24C08C4CTR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
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CAT24C08C4CTR | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
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KSC3569YTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 5V Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 15 W |
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BC556CBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
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M74VHC1G132DFT2G-L22038 | onsemi |
![]() Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 1.9V ~ 3.35V Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
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SBCW33LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW Qualification: AEC-Q101 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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SBCW33LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 300 mW Qualification: AEC-Q101 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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LA7217M-TRM-E | onsemi |
Description: SYNCHRONIZING SIGNAL SEPARATOR W Packaging: Bulk |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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NSVBC850CLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NSVBC850CLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
на замовлення 29450 шт: термін постачання 21-31 дні (днів) |
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NVB095N65S3F | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 5V @ 860µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V |
на замовлення 1572 шт: термін постачання 21-31 дні (днів) |
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74F269SPC | onsemi |
![]() Packaging: Bulk Package / Case: 24-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Operating Temperature: 0°C ~ 70°C Direction: Up, Down Trigger Type: Positive Edge Supplier Device Package: 24-PDIP Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 100 MHz Number of Bits per Element: 8 |
на замовлення 809 шт: термін постачання 21-31 дні (днів) |
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MBR160 | onsemi |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
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PCFG75T65SQF | onsemi |
![]() Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: Wafer IGBT Type: Field Stop Gate Charge: 128 nC Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
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NLV14541BDTR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 3MHz Type: Programmable Timer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 14-TSSOP Current - Supply: 15 µA Grade: Automotive Qualification: AEC-Q100 |
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NLV14541BDTR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 3MHz Type: Programmable Timer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 14-TSSOP Current - Supply: 15 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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NLV14541BDTR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 3MHz Type: Programmable Timer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 14-TSSOP Current - Supply: 15 µA Grade: Automotive Qualification: AEC-Q100 |
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NCV8772CDT334RKG | onsemi |
Description: IC REG LINEAR LDO 3.3V D2PAK Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 350mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 29 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: DPAK-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.875V @ 350mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 30 µA |
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MMBT5401M3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 130 mW |
на замовлення 64000 шт: термін постачання 21-31 дні (днів) |
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MMBT5401M3T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 130 mW |
на замовлення 70230 шт: термін постачання 21-31 дні (днів) |
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LM2931CDR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: 8-SOIC Voltage - Output (Max): 29.5V Voltage - Output (Min/Fixed): 2.7V Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 6 mA |
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74LCX573BQX | onsemi |
![]() Packaging: Bulk Package / Case: 20-WFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 1.5ns Supplier Device Package: 20-DQFN (2.5x4.5) |
на замовлення 693 шт: термін постачання 21-31 дні (днів) |
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KSD401G | onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 400mA, 10V Frequency - Transition: 5MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 25 W |
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MC74HC74ADTR2G-Q | onsemi |
Description: IC Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 14-TSSOP Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Bits per Element: 1 |
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NTND31215CZTAG | onsemi |
![]() Packaging: Bulk |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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2SA1418T-TD-E | onsemi |
![]() Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Supplier Device Package: PCP |
на замовлення 326239 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C442NT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C442NT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
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US-SIGFOX-GEVB | onsemi |
![]() Packaging: Bulk For Use With/Related Products: AX-SFUS Frequency: 900MHz Type: Transceiver Supplied Contents: Board(s) |
товар відсутній |
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NVMFS6H800NWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H800NWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 330µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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MCT210 | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.33V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 150% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 1µs, 50µs Rise / Fall Time (Typ): 1µs, 11µs Number of Channels: 1 Current - DC Forward (If) (Max): 100 mA |
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PCHG2N120W | onsemi |
Description: IGBT PCHG2N120W Packaging: Bulk |
товар відсутній |
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MC14073BD | onsemi |
![]() Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 8.8mA, 8.8mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
товар відсутній |
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MC14073BFELG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 8.8mA, 8.8mA Number of Inputs: 3 Supplier Device Package: SOEIAJ-14 Input Logic Level - High: 3.5V ~ 11V Input Logic Level - Low: 1.5V ~ 4V Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
товар відсутній |
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NTMFS5C612NLT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
товар відсутній |
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NTMFS5C612NLT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
на замовлення 1078 шт: термін постачання 21-31 дні (днів) |
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NTMFS5C612NLT1G-UIL5 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
товар відсутній |
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NTMFS5C612NLT1G-UIL5 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
на замовлення 1475 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C612NLWFAFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Qualification: AEC-Q101 |
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NVMFS5C612NLWFAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Qualification: AEC-Q101 |
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NVMFS5C612NLWFAFT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Qualification: AEC-Q101 |
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CAT5114VI-10T-QJ | onsemi |
Description: IC REG LINEAR Packaging: Bulk DigiKey Programmable: Not Verified |
товар відсутній |
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CAT5113ZGI-00-T3 | onsemi |
![]() Resistance (Ohms): 100k Tolerance: ±20% Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-MSOP Resistance - Wiper (Ohms) (Typ): 400 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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CAT5113YI-01-26645 | onsemi |
![]() Resistance (Ohms): 1k Tolerance: ±20% Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Type: Non-Volatile Interface: Up/Down (U/D, INC, CS) Configuration: Potentiometer Operating Temperature: -40°C ~ 85°C Number of Taps: 100 Voltage - Supply: 2.5V ~ 6V Taper: Linear Supplier Device Package: 8-TSSOP Resistance - Wiper (Ohms) (Typ): 400 Temperature Coefficient (Typ): 300ppm/°C Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 4353 шт: термін постачання 21-31 дні (днів) |
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LF351MX |
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Виробник: onsemi
Description: IC OPAMP JFET 1 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SOP
Number of Circuits: 1
Description: IC OPAMP JFET 1 CIRCUIT 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 2.3mA
Slew Rate: 13V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 50 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SOP
Number of Circuits: 1
товар відсутній
NGTB40N120IHLWG |
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Виробник: onsemi
Description: IGBT 1200V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/360ns
Switching Energy: 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 420 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 260 W
Description: IGBT 1200V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/360ns
Switching Energy: 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 420 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 260 W
товар відсутній
KSB1015YTU |
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Виробник: onsemi
Description: TRANS PNP 60V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
Description: TRANS PNP 60V 3A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 25 W
на замовлення 1654 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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5+ | 74.02 грн |
50+ | 57.42 грн |
100+ | 45.5 грн |
500+ | 36.19 грн |
1000+ | 29.48 грн |
MM74HC273N |
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Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
товар відсутній
FAN73833M |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
DigiKey Programmable: Not Verified
товар відсутній
HGTG40N60B3 |
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Виробник: onsemi
Description: IGBT 600V 70A 290W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 47ns/170ns
Switching Energy: 1.05mJ (on), 800µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 290 W
Description: IGBT 600V 70A 290W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 47ns/170ns
Switching Energy: 1.05mJ (on), 800µJ (off)
Test Condition: 480V, 40A, 3Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 330 A
Power - Max: 290 W
товар відсутній
74ALVC132MTCX |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.3V ~ 2.2V
Input Logic Level - Low: 0.25V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.8ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.3V ~ 2.2V
Input Logic Level - Low: 0.25V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.8ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
товар відсутній
74ALVC132M |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOIC
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.3V ~ 2.2V
Input Logic Level - Low: 0.25V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.8ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Description: IC GATE NAND 4CH 2-INP 14SOIC
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.3V ~ 2.2V
Input Logic Level - Low: 0.25V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.8ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
товар відсутній
EMI1051FCT5G |
Виробник: onsemi
Description: EMI FILTER WITH ESD PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 22.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 3-DSN (0.76x0.34)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Description: EMI FILTER WITH ESD PROTECTION
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 22.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 3-DSN (0.76x0.34)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 4.13 грн |
30000+ | 3.9 грн |
50000+ | 3.23 грн |
EMI1051FCT5G |
Виробник: onsemi
Description: EMI FILTER WITH ESD PROTECTION
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 22.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 3-DSN (0.76x0.34)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
Description: EMI FILTER WITH ESD PROTECTION
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz
Current - Peak Pulse (10/1000µs): 22.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 3-DSN (0.76x0.34)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: No
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.47 грн |
16+ | 18.74 грн |
100+ | 9.45 грн |
500+ | 7.23 грн |
1000+ | 5.37 грн |
2000+ | 4.52 грн |
5000+ | 4.25 грн |
BZX84C4V3LT3 |
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Виробник: onsemi
Description: DIODE ZENER 4.3V 225MW SOT-23
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER 4.3V 225MW SOT-23
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
товар відсутній
SZBZX84C8V2ET3G |
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Виробник: onsemi
Description: DIODE ZENER 8.2V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 2.26 грн |
SZBZX84C8V2ET3G |
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Виробник: onsemi
Description: DIODE ZENER 8.2V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.55 грн |
26+ | 11.54 грн |
100+ | 5.64 грн |
500+ | 4.41 грн |
1000+ | 3.06 грн |
2000+ | 2.66 грн |
5000+ | 2.42 грн |
NOIX1SE032KB-GTI |
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Виробник: onsemi
Description: XGS32MP 24PORT COLOR 10DEG CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 6580H x 4935V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 35
Description: XGS32MP 24PORT COLOR 10DEG CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 6580H x 4935V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 35
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 150092.18 грн |
NOIX1SE030KB-GTI |
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Виробник: onsemi
Description: XGS30MP 24PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 5460H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
Description: XGS30MP 24PORT COLOR 10D CRA
Packaging: Tray
Package / Case: 251-CPGA
Type: CMOS
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 5460H x 5460V
Supplier Device Package: 251-CPGA (44.4x37.25)
Frames per Second: 31
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 193092.74 грн |
CAT24C08C4CTR |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
товар відсутній
CAT24C08C4CTR |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
товар відсутній
KSC3569YTU |
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Виробник: onsemi
Description: TRANS NPN 400V 2A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 5V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 15 W
Description: TRANS NPN 400V 2A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 5V
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 15 W
товар відсутній
BC556CBU |
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Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
M74VHC1G132DFT2G-L22038 |
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Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.9V ~ 3.35V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.9V ~ 3.35V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товар відсутній
SBCW33LT1G |
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Виробник: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.07 грн |
6000+ | 4.67 грн |
9000+ | 4.04 грн |
30000+ | 3.72 грн |
SBCW33LT1G |
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Виробник: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 300 mW
Qualification: AEC-Q101
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.23 грн |
16+ | 18.96 грн |
100+ | 9.58 грн |
500+ | 7.34 грн |
1000+ | 5.44 грн |
LA7217M-TRM-E |
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1211+ | 17.79 грн |
NSVBC850CLT1G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.05 грн |
6000+ | 3.62 грн |
9000+ | 3 грн |
NSVBC850CLT1G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
на замовлення 29450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 24.42 грн |
19+ | 15.87 грн |
100+ | 7.77 грн |
500+ | 6.08 грн |
1000+ | 4.22 грн |
NVB095N65S3F |
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Виробник: onsemi
Description: SF3 FRFET AUTO 95MOHM D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Description: SF3 FRFET AUTO 95MOHM D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5V @ 860µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
на замовлення 1572 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 467.75 грн |
10+ | 378.56 грн |
100+ | 306.22 грн |
74F269SPC |
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Виробник: onsemi
Description: IC BINARY COUNTER 8-BIT 24DIP
Packaging: Bulk
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Operating Temperature: 0°C ~ 70°C
Direction: Up, Down
Trigger Type: Positive Edge
Supplier Device Package: 24-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 100 MHz
Number of Bits per Element: 8
Description: IC BINARY COUNTER 8-BIT 24DIP
Packaging: Bulk
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Operating Temperature: 0°C ~ 70°C
Direction: Up, Down
Trigger Type: Positive Edge
Supplier Device Package: 24-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 100 MHz
Number of Bits per Element: 8
на замовлення 809 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 1000.28 грн |
MBR160 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товар відсутній
PCFG75T65SQF |
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Виробник: onsemi
Description: IGBT FIELD STOP 650V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 128 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT FIELD STOP 650V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 128 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
товар відсутній
NLV14541BDTR2G |
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Виробник: onsemi
Description: IC OSC PROG TIMER 3MHZ 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 3MHz
Type: Programmable Timer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Supply: 15 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC OSC PROG TIMER 3MHZ 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 3MHz
Type: Programmable Timer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Supply: 15 µA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NLV14541BDTR2G |
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Виробник: onsemi
Description: IC OSC PROG TIMER 3MHZ 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 3MHz
Type: Programmable Timer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Supply: 15 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC OSC PROG TIMER 3MHZ 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 3MHz
Type: Programmable Timer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Supply: 15 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 13.61 грн |
NLV14541BDTR2G |
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Виробник: onsemi
Description: IC OSC PROG TIMER 3MHZ 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 3MHz
Type: Programmable Timer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Supply: 15 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC OSC PROG TIMER 3MHZ 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 3MHz
Type: Programmable Timer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 14-TSSOP
Current - Supply: 15 µA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NCV8772CDT334RKG |
Виробник: onsemi
Description: IC REG LINEAR LDO 3.3V D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.875V @ 350mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 30 µA
Description: IC REG LINEAR LDO 3.3V D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 350mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 29 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: DPAK-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.875V @ 350mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 30 µA
товар відсутній
MMBT5401M3T5G |
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Виробник: onsemi
Description: TRANS PNP 150V 0.06A SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 130 mW
Description: TRANS PNP 150V 0.06A SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 130 mW
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 3.71 грн |
16000+ | 2.96 грн |
24000+ | 2.91 грн |
56000+ | 2.45 грн |
MMBT5401M3T5G |
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Виробник: onsemi
Description: TRANS PNP 150V 0.06A SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 130 mW
Description: TRANS PNP 150V 0.06A SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 60 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 130 mW
на замовлення 70230 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.65 грн |
19+ | 15.72 грн |
100+ | 7.67 грн |
500+ | 6.01 грн |
1000+ | 4.17 грн |
2000+ | 3.62 грн |
LM2931CDR2 |
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Виробник: onsemi
Description: IC REG LDO 100MA ADJ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Description: IC REG LDO 100MA ADJ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 29.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
товар відсутній
74LCX573BQX |
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Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20DQFN
Packaging: Bulk
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-DQFN (2.5x4.5)
Description: IC D-TYPE TRANSP SGL 8:8 20DQFN
Packaging: Bulk
Package / Case: 20-WFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-DQFN (2.5x4.5)
на замовлення 693 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
693+ | 39.72 грн |
KSD401G |
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Виробник: onsemi
Description: TRANS NPN 150V 2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 400mA, 10V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
Description: TRANS NPN 150V 2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 400mA, 10V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
товар відсутній
MC74HC74ADTR2G-Q |
Виробник: onsemi
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Bits per Element: 1
Description: IC
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 14-TSSOP
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Bits per Element: 1
товар відсутній
NTND31215CZTAG |
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на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4098+ | 4.88 грн |
2SA1418T-TD-E |
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Виробник: onsemi
Description: TRANS PNP 160V 0.7A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
Description: TRANS PNP 160V 0.7A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Supplier Device Package: PCP
на замовлення 326239 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1237+ | 16.91 грн |
NTMFS5C442NT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 40.82 грн |
10000+ | 37.5 грн |
NTMFS5C442NT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 29A/140A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 103.77 грн |
10+ | 81.63 грн |
100+ | 63.51 грн |
500+ | 50.51 грн |
1000+ | 41.15 грн |
2000+ | 38.74 грн |
US-SIGFOX-GEVB |
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Виробник: onsemi
Description: EVAL BRD IOT IDK US SIGFOX
Packaging: Bulk
For Use With/Related Products: AX-SFUS
Frequency: 900MHz
Type: Transceiver
Supplied Contents: Board(s)
Description: EVAL BRD IOT IDK US SIGFOX
Packaging: Bulk
For Use With/Related Products: AX-SFUS
Frequency: 900MHz
Type: Transceiver
Supplied Contents: Board(s)
товар відсутній
NVMFS6H800NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 156 грн |
NVMFS6H800NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 28A/203A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5530 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 301.4 грн |
10+ | 244.02 грн |
100+ | 197.38 грн |
500+ | 164.65 грн |
MCT210 |
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Виробник: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.33V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 150% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 1µs, 50µs
Rise / Fall Time (Typ): 1µs, 11µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Description: OPTOISO 5.3KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.33V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 150% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 1µs, 50µs
Rise / Fall Time (Typ): 1µs, 11µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
товар відсутній
MC14073BD |
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Виробник: onsemi
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
товар відсутній
MC14073BFELG |
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Виробник: onsemi
Description: IC GATE AND 3CH 3-INP SOEIAJ-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 3
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 3CH 3-INP SOEIAJ-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 3
Supplier Device Package: SOEIAJ-14
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 100ns @ 15V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
товар відсутній
NTMFS5C612NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
товар відсутній
NTMFS5C612NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
на замовлення 1078 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 187.71 грн |
10+ | 150.04 грн |
100+ | 119.39 грн |
500+ | 94.81 грн |
1000+ | 80.45 грн |
NTMFS5C612NLT1G-UIL5 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
товар відсутній
NTMFS5C612NLT1G-UIL5 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
на замовлення 1475 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 170.16 грн |
10+ | 135.93 грн |
100+ | 108.17 грн |
500+ | 85.9 грн |
NVMFS5C612NLWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMFS5C612NLWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMFS5C612NLWFAFT3G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 38A/250A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
CAT5114VI-10T-QJ |
товар відсутній
CAT5113ZGI-00-T3 |
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Виробник: onsemi
Description: CAT5113 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 400
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: CAT5113 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 100k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-MSOP
Resistance - Wiper (Ohms) (Typ): 400
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
307+ | 69.05 грн |
CAT5113YI-01-26645 |
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Виробник: onsemi
Description: CAT5113 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 1k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Resistance - Wiper (Ohms) (Typ): 400
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: CAT5113 - 100-TAP DIGITALLY PROG
Resistance (Ohms): 1k
Tolerance: ±20%
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Type: Non-Volatile
Interface: Up/Down (U/D, INC, CS)
Configuration: Potentiometer
Operating Temperature: -40°C ~ 85°C
Number of Taps: 100
Voltage - Supply: 2.5V ~ 6V
Taper: Linear
Supplier Device Package: 8-TSSOP
Resistance - Wiper (Ohms) (Typ): 400
Temperature Coefficient (Typ): 300ppm/°C
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 4353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
307+ | 69.05 грн |