Продукція > RGP
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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RGP-MBF4-6099-17F-TA-001 | Raltron Electronics | Description: ANTENNA PARABOLIC 600-6500MHZ Packaging: Box Mounting Type: Pole Mount Frequency Range: 600MHz ~ 6.5GHz Applications: 2G, 3G, 4G, 5G, Cellular, LTE, GSM, WiFi, GNSS, GPS, Beidou, Glonass, Galileo, IMS, LoRa, Sigfox, Zigbee, WCDMA, GPRS, IoT Gain: 15dBi, 20dBi, 25dBi Termination: N Type Female Ingress Protection: IP65 Number of Bands: 20 VSWR: 1.4, 1.6 Antenna Type: Parabolic Grid Height (Max): 24.000" (609.60mm) Return Loss: 10dB, 20dB Frequency Group: Wide Band Frequency (Center/Band): 752MHz,859MHz,920MHz,1.45GHz,1.575GHz,1.585GHz,1.785GHz,1.92GHz,2.045GHz,2.4GHz,2.495GHz,2.6GHz,3.4GHz,3.55GHz,3.9GHz,5.375GHz,5.45GHz,5.5GHz,5.8GHz,5.8875GHz RF Family/Standard: Cellular Part Status: Active Power - Max: 100 W | товар відсутній | |||||||||||||||||||
RGP-MBF4-825-17F-TA-001 | Raltron Electronics | Description: ANTENNA PARABOLIC 600-6500MHZ Packaging: Box Mounting Type: Pole Mount Frequency Range: 600MHz ~ 6.5GHz Applications: 2G, 3G, 4G, 5G, Cellular, LTE, GSM, WiFi, GNSS, GPS, Beidou, Glonass, Galileo, IMS, LoRa, Sigfox, Zigbee, WCDMA, GPRS, IoT Gain: 15dBi, 20dBi, 26dBi Termination: N Type Female Ingress Protection: IP65 Number of Bands: 20 VSWR: 1.4, 1.6 Antenna Type: Parabolic Grid Height (Max): 35.000" (889.00mm) Return Loss: 10dB, 20dB Frequency Group: Wide Band Frequency (Center/Band): 752MHz,859MHz,920MHz,1.45GHz,1.575GHz,1.585GHz,1.785GHz,1.92GHz,2.045GHz,2.4GHz,2.495GHz,2.6GHz,3.4GHz,3.55GHz,3.9GHz,5.375GHz,5.45GHz,5.5GHz,5.8GHz,5.8875GHz RF Family/Standard: Cellular Part Status: Active Power - Max: 100 W | товар відсутній | |||||||||||||||||||
RGP02-12 | на замовлення 9405 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP02-12E Код товару: 38327 | Vishay | Діоди, діодні мости, стабілітрони > Діоди супершвидкі Корпус: DO-41 Vrr, V: 1200 V Iav, A: 0,5 A Час зворотнього відновлення Trr, ns: 300 ns | товар відсутній | |||||||||||||||||||
RGP02-12E | EIC | Rectifier Diode Switching 1.2KV 0.5A 300ns 2-Pin DO-41 | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/53 | Vishay General Semiconductor | Rectifiers 0.5A, 1200V, 300NS, Ultrafast, SUPERECT | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/54 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/54 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | на замовлення 4766 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/54 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 T/R | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/54 | Vishay General Semiconductor | Rectifiers 1200 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 5519 шт: термін постачання 21-30 дні (днів) |
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RGP02-12E-E3/54 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 T/R | на замовлення 2272 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/54 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 T/R | на замовлення 2272 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/73 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 Ammo | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | на замовлення 4207 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/73 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 Ammo | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/73 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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RGP02-12E-E3/73 | Vishay | Diode Switching 1.2KV 0.5A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-12E-E3/73 | Vishay General Semiconductor | Rectifiers 1200 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 6204 шт: термін постачання 21-30 дні (днів) |
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RGP02-12E-M3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL | товар відсутній | |||||||||||||||||||
RGP02-12E-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | товар відсутній | |||||||||||||||||||
RGP02-12EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | товар відсутній | |||||||||||||||||||
RGP02-12EHE3/54 | Vishay | Rectifier Diode Switching 1.2KV 0.5A 300ns Automotive 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-12EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | товар відсутній | |||||||||||||||||||
RGP02-14E | EIC Semiconductor | Diode Switching 1.4KV 0.5A 2-Pin DO-41 | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/53 | Vishay General Semiconductor | Rectifiers 1400 Volt 0.5A 300ns 20A IFSM Trim Leads | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/54 | Vishay General Semiconductor | Rectifiers 1400 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 8283 шт: термін постачання 21-30 дні (днів) |
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RGP02-14E-E3/54 | Vishay | Rectifier Diode Switching 1.4KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/54 | Vishay | Rectifier Diode Switching 1.4KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | на замовлення 5471 шт: термін постачання 21-31 дні (днів) |
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RGP02-14E-E3/54 | Vishay | Rectifier Diode Switching 1.4KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/54 | Vishay | Rectifier Diode Switching 1.4KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/73 | Vishay | Diode Switching 1.4KV 0.5A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-14E-E3/73 | Vishay General Semiconductor | Rectifiers 1400 Volt 0.5A 300ns 20 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP02-14E-M3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL | товар відсутній | |||||||||||||||||||
RGP02-14E-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | товар відсутній | |||||||||||||||||||
RGP02-14E/4 | Vishay | Diode Switching 1.4KV 0.5A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-14EHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | товар відсутній | |||||||||||||||||||
RGP02-14EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | товар відсутній | |||||||||||||||||||
RGP02-14EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.4KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1400 V | товар відсутній | |||||||||||||||||||
RGP02-15 | на замовлення 23000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP02-15E-E3/53 | Vishay General Semiconductor | Rectifiers 1500 Volt 0.5A 300ns 20A IFSM Trim Leads | товар відсутній | |||||||||||||||||||
RGP02-15E-E3/53 | Vishay Semiconductor Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL | товар відсутній | |||||||||||||||||||
RGP02-15E-E3/54 Код товару: 152112 | Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні | товар відсутній | ||||||||||||||||||||
RGP02-15E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP02-15E-E3/54 | Vishay General Semiconductor | Rectifiers 1500 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 8330 шт: термін постачання 21-30 дні (днів) |
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RGP02-15E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | на замовлення 10923 шт: термін постачання 21-31 дні (днів) |
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RGP02-15E-E3/73 | Vishay General Semiconductor | Rectifiers 1500 Volt 0.5A 300ns 20 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP02-15E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | товар відсутній | |||||||||||||||||||
RGP02-15E-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | товар відсутній | |||||||||||||||||||
RGP02-15E-M3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL | товар відсутній | |||||||||||||||||||
RGP02-15EHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | товар відсутній | |||||||||||||||||||
RGP02-15EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | товар відсутній | |||||||||||||||||||
RGP02-15EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | товар відсутній | |||||||||||||||||||
RGP02-16 | на замовлення 854 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP02-16E | EIC | Diode Switching 1.6KV 0.5A 2-Pin DO-41 | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/53 | Vishay General Semiconductor | Rectifiers 1600 Volt 0.5A 300ns 20A IFSM Trim Leads | на замовлення 5970 шт: термін постачання 21-30 дні (днів) |
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RGP02-16E-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RGP02-16E-E3/54 | Vishay | Rectifier Diode Switching 1.6KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.5A; Ifsm: 20A; DO41; Ufmax: 1.8V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 20A Case: DO41 Max. forward voltage: 1.8V Leakage current: 50µA Reverse recovery time: 300ns кількість в упаковці: 1 шт | на замовлення 5044 шт: термін постачання 14-21 дні (днів) |
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RGP02-16E-E3/54 | Vishay | Rectifier Diode Switching 1.6KV 0.5A 300ns 2-Pin DO-41 T/R | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP02-16E-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.5A; Ifsm: 20A; DO41; Ufmax: 1.8V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 20A Case: DO41 Max. forward voltage: 1.8V Leakage current: 50µA Reverse recovery time: 300ns | на замовлення 5044 шт: термін постачання 21-30 дні (днів) |
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RGP02-16E-E3/54 | VISHAY | Description: VISHAY - RGP02-16E-E3/54 - Diode mit Standard-Erholzeit, 1.6 kV, 500 mA, Einfach, 1.8 V, 300 ns, 20 A tariffCode: 85411000 Bauform - Diode: DO-204AL Durchlassstoßstrom: 20A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: 0 Qualifikation: 0 Durchlassspannung, max.: 1.8V Sperrverzögerungszeit: 300ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 500mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.6kV Anzahl der Pins: 2Pin(s) Produktpalette: SUPERECTIFIER productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 0 SVHC: To Be Advised | на замовлення 6066 шт: термін постачання 21-31 дні (днів) |
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RGP02-16E-E3/54 | Vishay | Rectifier Diode Switching 1.6KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/54 | Vishay | Rectifier Diode Switching 1.6KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/54 | Vishay General Semiconductor | Rectifiers 1600 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 40397 шт: термін постачання 21-30 дні (днів) |
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RGP02-16E-E3/54 | Vishay | Rectifier Diode Switching 1.6KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | на замовлення 5337 шт: термін постачання 21-31 дні (днів) |
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RGP02-16E-E3/73 | Vishay | Diode Switching 1.6KV 0.5A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | на замовлення 2830 шт: термін постачання 21-31 дні (днів) |
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RGP02-16E-E3/73 | Vishay | Diode Switching 1.6KV 0.5A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/73 | Vishay General Semiconductor | Rectifiers 1600 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 5060 шт: термін постачання 21-30 дні (днів) |
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RGP02-16E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RGP02-16E-E3/73 | Vishay | Diode Switching 1.6KV 0.5A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-16E-E3/73 | на замовлення 200000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP02-16E-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | товар відсутній | |||||||||||||||||||
RGP02-16E-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | товар відсутній | |||||||||||||||||||
RGP02-16E-T/R | EIC SEMICONDUCTOR INC. | Description: DIODE GEN PURP 1.6KV 500MA DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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RGP02-16EHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | товар відсутній | |||||||||||||||||||
RGP02-16EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | товар відсутній | |||||||||||||||||||
RGP02-16EHE3/54 | Vishay | Diode Switching 1.6KV 0.5A Automotive 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-16EHE3/73 | Vishay | Rectifier Diode Switching 1.6KV 0.5A 300ns Automotive 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-16EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.6KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1600 V | товар відсутній | |||||||||||||||||||
RGP02-17E-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-17E-E3/53 | Vishay General Semiconductor | Rectifiers 1700 Volt 0.5A 300ns 20A IFSM Trim Leads | товар відсутній | |||||||||||||||||||
RGP02-17E-E3/54 | Vishay | Rectifier Diode Switching 1.7KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-17E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP02-17E-E3/54 | Vishay General Semiconductor | Rectifiers 1700 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 19379 шт: термін постачання 21-30 дні (днів) |
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RGP02-17E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP02-17E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-17E-E3/73 | Vishay General Semiconductor | Rectifiers 1700 Volt 0.5A 300ns 20 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP02-17E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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RGP02-17E-E3/73 | Vishay | Rectifier Diode Switching 1.7KV 0.5A 300ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-17E-E3S/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-17E-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-17E-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL | товар відсутній | |||||||||||||||||||
RGP02-17E-M3S/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-17EHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-17EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-17EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.7KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1700 V | товар відсутній | |||||||||||||||||||
RGP02-18 | на замовлення 23000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP02-18E | EIC | Rectifier Diode Switching 1.8KV 0.5A 300ns 2-Pin DO-41 | товар відсутній | |||||||||||||||||||
RGP02-18E-E3/54 | Vishay | Rectifier Diode Switching 1.8KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-18E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1800 V | товар відсутній | |||||||||||||||||||
RGP02-18E-E3/54 | Vishay General Semiconductor | Rectifiers 1800 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 3740 шт: термін постачання 21-30 дні (днів) |
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RGP02-18E-E3/54 | Vishay | Rectifier Diode Switching 1.8KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-18E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1800 V | на замовлення 2411 шт: термін постачання 21-31 дні (днів) |
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RGP02-18E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1800 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RGP02-18E-E3/73 | Vishay General Semiconductor | Rectifiers 1800 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 10675 шт: термін постачання 21-30 дні (днів) |
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RGP02-18E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1800 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RGP02-18E-E3/73 | Vishay | Rectifier Diode Switching 1.8KV 0.5A 300ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-18E-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL | товар відсутній | |||||||||||||||||||
RGP02-18E-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1800 V | товар відсутній | |||||||||||||||||||
RGP02-18EHE3/54 | Vishay | Diode Switching 1.8KV 0.5A Automotive 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-18EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1800 V | товар відсутній | |||||||||||||||||||
RGP02-18EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.8KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 1800 V | товар відсутній | |||||||||||||||||||
RGP02-20 | на замовлення 41000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP02-20 | Vishay Semiconductors | Rectifiers | товар відсутній | |||||||||||||||||||
RGP02-20E | EIC | Diode Switching 2KV 0.5A 2-Pin DO-41 | товар відсутній | |||||||||||||||||||
RGP02-20E | Vishay Semiconductors | Rectifiers | товар відсутній | |||||||||||||||||||
RGP02-20E | EIC | Diode Switching 2KV 0.5A 2-Pin DO-41 | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E Код товару: 105264 | Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні | товар відсутній | ||||||||||||||||||||
RGP02-20E | GS | Диод БМ DO-41 Vrrm=2000V If(av)=0.5 Trr=300nsA | на замовлення 5480 шт: термін постачання 2-3 дні (днів) |
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RGP02-20E | EIC | Diode Switching 2KV 0.5A 2-Pin DO-41 | товар відсутній | |||||||||||||||||||
RGP02-20E-805E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP02-20E-BULK | EIC SEMICONDUCTOR INC. | Description: DIODE GEN PURP 2KV 500MA DO41 Packaging: Bag Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3-73 | на замовлення 24485 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP02-20E-E3/53 | Vishay General Semiconductor | Rectifiers 2000 Volt 0.5A 300ns 20A IFSM Trim Leads | на замовлення 7438 шт: термін постачання 21-30 дні (днів) |
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RGP02-20E-E3/53 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-20E-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/53 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-20E-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | на замовлення 2711 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-20E-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 0.5A; Ifsm: 20A; DO41; Ufmax: 1.8V; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 2kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 20A Case: DO41 Max. forward voltage: 1.8V Leakage current: 50µA Reverse recovery time: 300ns | на замовлення 4676 шт: термін постачання 21-30 дні (днів) |
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RGP02-20E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | на замовлення 34763 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 | VISHAY | Description: VISHAY - RGP02-20E-E3/54 - Diode mit Standard-Erholzeit, 2 kV, 500 mA, Einfach, 1.8 V, 300 ns, 20 A tariffCode: 85411000 Durchlassstoßstrom: 20A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Durchlassspannung, max.: 1.8V Sperrverzögerungszeit: 300ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 500mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 2kV Anzahl der Pins: 2Pin(s) Produktpalette: RGP02 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | на замовлення 21309 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 T/R | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 Код товару: 153226 | Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні | товар відсутній | ||||||||||||||||||||
RGP02-20E-E3/54 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 T/R | на замовлення 4405 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 T/R | на замовлення 4410 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-20E-E3/54 | Vishay General Semiconductor | Rectifiers 0.5 Amp 2000 Volt | на замовлення 59975 шт: термін постачання 21-30 дні (днів) |
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RGP02-20E-E3/54 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 T/R | на замовлення 10268 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 0.5A; Ifsm: 20A; DO41; Ufmax: 1.8V; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 2kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 20A Case: DO41 Max. forward voltage: 1.8V Leakage current: 50µA Reverse recovery time: 300ns кількість в упаковці: 1 шт | на замовлення 4676 шт: термін постачання 14-21 дні (днів) |
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RGP02-20E-E3/54 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 T/R | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/73 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-20E-E3/73 | Vishay General Semiconductor | Rectifiers 2000 Volt 0.5A 300ns 20 Amp IFSM | на замовлення 93309 шт: термін постачання 21-30 дні (днів) |
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RGP02-20E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | на замовлення 2355 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-E3/73 | Vishay | Rectifier Diode Switching 2KV 0.5A 300ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-20E-E3/73 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 0.5A; Ifsm: 20A; DO41; Ufmax: 1.8V; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 2kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 20A Case: DO41 Max. forward voltage: 1.8V Leakage current: 50µA Reverse recovery time: 300ns кількість в упаковці: 1 шт | на замовлення 2107 шт: термін постачання 14-21 дні (днів) |
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RGP02-20E-E3/73 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 0.5A; Ifsm: 20A; DO41; Ufmax: 1.8V; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 2kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 20A Case: DO41 Max. forward voltage: 1.8V Leakage current: 50µA Reverse recovery time: 300ns | на замовлення 2107 шт: термін постачання 21-30 дні (днів) |
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RGP02-20E-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RGP02-20E-GI Код товару: 40922 | Різні комплектуючі > Різні комплектуючі 2 | товар відсутній | ||||||||||||||||||||
RGP02-20E-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP02-20E-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP02-20E/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP02-20EHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP02-20EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP02-20EHE3/54 | Vishay | Diode Switching 2KV 0.5A Automotive 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP02-20EHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP02-20EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP02-20EHE3/73 | Vishay | Diode Switching 2KV 0.5A Automotive 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP02-20EHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 2KV 500MA DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | товар відсутній | |||||||||||||||||||
RGP0207CHJ100M | TE Connectivity | Res Thick Film 100M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 6200 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ100M | TE Connectivity Passive Product | Description: RES 100M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 100 mOhms | на замовлення 8635 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ100M | TE Connectivity | Res Thick Film 100M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHJ100M | TE Connectivity Passive Product | Description: RES 100M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 100 mOhms | на замовлення 125000 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ100M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ100M - Widerstand für Durchsteckmontage, 100 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 0.1Gohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: Yes-Date/Lot Code Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: No SVHC (23-Jan-2024) | на замовлення 16507 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ100M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 100M | на замовлення 6317 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ100M | TE Connectivity | Res Thick Film 100M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHJ10M | TE Connectivity | Res Thick Film 10M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ10M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ10M - Widerstand für Durchsteckmontage, 10 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 10Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: Yes-Date/Lot Code Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: To Be Advised | на замовлення 4186 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ10M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 10M | на замовлення 6851 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ10M | TE Connectivity | Res Thick Film 10M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHJ10M | TE Connectivity Passive Product | Description: RES 10M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 10 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ10M | TE Connectivity | Res Thick Film 10M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ10M. | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ10M. - Widerstand für Durchsteckmontage, 10 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250 Widerstandstyp: Hochspannung Widerstand: 10 usEccn: EAR99 Betriebstemperatur, min.: -55 Widerstandstoleranz: ± 5% Temperaturkoeffizient: ± 350ppm/°C Produktlänge: 6.5 euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750 Produktdurchmesser: 2.5 Betriebstemperatur, max.: 155 Produktbreite: - SVHC: No SVHC (25-Jun-2020) | на замовлення 4850 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ120M | TE Connectivity / AMP | Thick Film Resistors - Through Hole RGP0207CH 5% 120M | на замовлення 1431 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ120M | TE CONNECTIVITY | Резистор RGP 120 МОм 5% 0,25 Вт ТКС350 700 В | на замовлення 68 шт: термін постачання 2-3 дні (днів) |
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RGP0207CHJ120M | TE Connectivity Passive Product | Description: RES 120M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: High Voltage Packaging: Bulk Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 120 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ130M | TE Connectivity Passive Product | Description: RES 130M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Bulk Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 130 mOhms | на замовлення 7989 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ130M | TE Connectivity | Res Thick Film 130M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHJ130M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 130M | на замовлення 3582 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ15M | TE Connectivity | Res Thick Film 15M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHJ15M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 15M | на замовлення 3492 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ15M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ15M - Widerstand für Durchsteckmontage, 15 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 15Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: Yes-Date/Lot Code Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: No SVHC (25-Jun-2020) | на замовлення 5609 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ15M | TE Connectivity Passive Product | Description: RES 15M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 15 MOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ15M. | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ15M. - Widerstand für Durchsteckmontage, 15 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250 Widerstandstyp: Hochspannung Widerstand: 15 usEccn: EAR99 Betriebstemperatur, min.: -55 Widerstandstoleranz: ± 5% Temperaturkoeffizient: ± 350ppm/°C Produktlänge: 6.5 euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750 Produktdurchmesser: 2.5 Betriebstemperatur, max.: 155 Produktbreite: - SVHC: No SVHC (25-Jun-2020) | на замовлення 4590 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ22M | TE Connectivity Passive Product | Description: RES 22M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 22 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ22M | TE Connectivity | Res Thick Film 22M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ22M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ22M - Widerstand für Durchsteckmontage, 22 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 22Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: To Be Advised | на замовлення 2731 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ22M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 22M | на замовлення 21779 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ22M. | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ22M. - Widerstand für Durchsteckmontage, 22 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250 Widerstandstyp: Hochspannung Widerstand: 22 usEccn: EAR99 Betriebstemperatur, min.: -55 Widerstandstoleranz: ± 5% Temperaturkoeffizient: ± 350ppm/°C Produktlänge: 6.5 euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750 Produktdurchmesser: 2.5 Betriebstemperatur, max.: 155 Produktbreite: - SVHC: No SVHC (16-Jan-2020) | на замовлення 4788 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ27M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 27M | на замовлення 6763 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ27M | TE Connectivity Passive Product | Description: RES 27M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 27 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ27M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ27M - Widerstand für Durchsteckmontage, 27 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 27Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: To Be Advised | на замовлення 3585 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ33M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 33M | на замовлення 247 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ33M | TE Connectivity | Res Thick Film 33M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHJ33M | TE Connectivity Passive Product | Description: RES 33M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 33 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ33M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ33M - Widerstand für Durchsteckmontage, 33 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 33Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: Yes-Date/Lot Code Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: To Be Advised | на замовлення 2420 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ33M | TE Connectivity | Res Thick Film 33M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ33M | TE Connectivity Passive Product | Description: RES 33M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 33 mOhms | на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ39M | TE Connectivity Passive Product | Description: RES 39M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: High Voltage Packaging: Bulk Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 39 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ430M | TE Connectivity Passive Product | Description: RES 430M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±5% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 430 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ430M | TE Connectivity / Neohm | Thick Film Resistors - Through Hole RGP0207CH 5% 430M 5K PK | товар відсутній | |||||||||||||||||||
RGP0207CHJ470M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ470M - Widerstand für Durchsteckmontage, 470 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 0.47Gohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: Yes-Date/Lot Code Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: No SVHC (23-Jan-2024) | на замовлення 8170 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ470M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 470M 5K PK | на замовлення 3782 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ470M | TE Connectivity | Category: Resistors - Unclassified Description: Resistor: thick film Type of resistor: thick film | на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ470M | TE Connectivity Passive Product | Description: RES 470M OHM 5% 1/4W AXIAL Packaging: Tape & Box (TB) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 470 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ470M | TE Connectivity | Res Thick Film 470M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ470M | TE Connectivity | Category: Resistors - Unclassified Description: Resistor: thick film Type of resistor: thick film кількість в упаковці: 5000 шт | на замовлення 10000 шт: термін постачання 14-21 дні (днів) |
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RGP0207CHJ470M | TE Connectivity Passive Product | Description: RES 470M OHM 5% 1/4W AXIAL Packaging: Cut Tape (CT) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 470 mOhms | на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ470M. | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ470M. - Widerstand für Durchsteckmontage, 0.47 Gohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250 Widerstandstyp: Hochspannung Widerstand: 0.47 usEccn: EAR99 Betriebstemperatur, min.: -55 Widerstandstoleranz: ± 5% Temperaturkoeffizient: ± 350ppm/°C Produktlänge: 6.5 euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750 Produktdurchmesser: 2.5 Betriebstemperatur, max.: 155 Produktbreite: - SVHC: No SVHC (17-Jan-2022) | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ47M | TE Connectivity | Res Thick Film 47M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHJ47M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ47M - Widerstand für Durchsteckmontage, 47 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 47Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: Yes-Date/Lot Code Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: No SVHC (25-Jun-2020) | на замовлення 4168 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ47M | TE Connectivity Passive Product | Description: RES 47M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 47 mOhms | на замовлення 5983 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ47M | TE Connectivity | Res Thick Film 47M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 4400 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ47M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 47M | на замовлення 7009 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ47M | TE Connectivity Passive Product | Description: RES 47M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 47 mOhms | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ47M. | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ47M. - Widerstand für Durchsteckmontage, 47 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250 Widerstandstyp: Hochspannung Widerstand: 47 usEccn: EAR99 Betriebstemperatur, min.: -55 Widerstandstoleranz: ± 5% Temperaturkoeffizient: ± 350ppm/°C Produktlänge: 6.5 euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750 Produktdurchmesser: 2.5 Betriebstemperatur, max.: 155 Produktbreite: - SVHC: No SVHC (25-Jun-2020) | на замовлення 4816 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ68M | TE Connectivity Passive Product | Description: RES 68M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 68 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ68M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 68M | на замовлення 4519 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHJ68M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ68M - Widerstand für Durchsteckmontage, 68 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 68Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: To Be Advised | на замовлення 3869 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ68M. | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ68M. - Widerstand für Durchsteckmontage, 68 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250 Widerstandstyp: Hochspannung Widerstand: 68 usEccn: EAR99 Betriebstemperatur, min.: -55 Widerstandstoleranz: ± 5% Temperaturkoeffizient: ± 350ppm/°C Produktlänge: 6.5 euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750 Produktdurchmesser: 2.5 Betriebstemperatur, max.: 155 Produktbreite: - SVHC: No SVHC (17-Jan-2022) | на замовлення 4650 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ82M | TE Connectivity | Res Thick Film 82M Ohm 5% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ82M | NEOHM - TE CONNECTIVITY | Description: NEOHM - TE CONNECTIVITY - RGP0207CHJ82M - Widerstand für Durchsteckmontage, 82 Mohm, RGP, 250 mW, ± 5%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 82Mohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: 5% Temperaturkoeffizient: 350ppm/C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: No Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: No SVHC (10-Jun-2022) | на замовлення 3692 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHJ82M | TE Connectivity Passive Product | Description: RES 82M OHM 5% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 82 mOhms | товар відсутній | |||||||||||||||||||
RGP0207CHJ82M | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole RGP0207CH 5% 82M | на замовлення 1315 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHK1G0 | TE Connectivity | Res Thick Film 1G Ohm 10% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHK1G0 | TE CONNECTIVITY | Description: TE CONNECTIVITY - RGP0207CHK1G0 - Widerstand für Durchsteckmontage, 1 Gohm, RGP, 250 mW, ± 10%, Axial bedrahtet, 750 V tariffCode: 85332100 rohsCompliant: YES Bauform/Gehäuse des Widerstands: Axial bedrahtet Widerstandstechnologie: Dickschichtwiderstand hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Nennleistung: 250mW Widerstandstyp: Hochspannung Widerstand: 1Gohm usEccn: EAR99 Betriebstemperatur, min.: -55°C Widerstandstoleranz: ± 10% Temperaturkoeffizient: ± 350ppm/°C Produktlänge: 6.5mm euEccn: NLR Produktpalette: RGP productTraceability: Yes-Date/Lot Code Nennspannung: 750V Produktdurchmesser: 2.5mm Betriebstemperatur, max.: 155°C Produktbreite: - SVHC: No SVHC (17-Jan-2023) | на замовлення 411 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHK1G0 | TE Connectivity Passive Product | Description: RES 1G OHM 10% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±10% Features: High Voltage Packaging: Tape & Box (TB) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 1 GOhms | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RGP0207CHK1G0 | TE Connectivity | Res Thick Film 1G Ohm 10% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHK1G0 | TE Connectivity / Holsworthy | Thick Film Resistors - Through Hole 1GOhm 1/4W 350PPM | на замовлення 773 шт: термін постачання 21-30 дні (днів) |
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RGP0207CHK1G0 | TE Connectivity | Res Thick Film 1G Ohm 10% 0.25W(1/4W) ±350ppm/°C Conformal Coated AXL Ammo | товар відсутній | |||||||||||||||||||
RGP0207CHK1G0 | TE Connectivity Passive Product | Description: RES 1G OHM 10% 1/4W AXIAL Power (Watts): 0.25W, 1/4W Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±350ppm/°C Size / Dimension: 0.098" Dia x 0.256" L (2.50mm x 6.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 1 GOhms | на замовлення 854 шт: термін постачання 21-31 дні (днів) |
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RGP1/8-2000-J-585 | Welwyn Components / TT Electronics | Metal Film Resistors - Through Hole | товар відсутній | |||||||||||||||||||
RGP10A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10A | на замовлення 30000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10A | Fairchild Semiconductor | Description: DIODE GEN PURP 50V 1A DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | на замовлення 7414 шт: термін постачання 21-31 дні (днів) |
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RGP10A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10A | onsemi / Fairchild | Rectifiers 50V 1a Rectifier Glass Passivated | на замовлення 23738 шт: термін постачання 21-30 дні (днів) |
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RGP10A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-41 T/R | на замовлення 24926 шт: термін постачання 21-31 дні (днів) |
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RGP10A | ONSEMI | Description: ONSEMI - RGP10A - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | на замовлення 48456 шт: термін постачання 21-31 дні (днів) |
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RGP10A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10A | ON Semiconductor | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-41 T/R | на замовлення 24926 шт: термін постачання 21-31 дні (днів) |
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RGP10A-013M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL | товар відсутній | |||||||||||||||||||
RGP10A-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 50 Volt 150ns | товар відсутній | |||||||||||||||||||
RGP10A-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | товар відсутній | |||||||||||||||||||
RGP10A-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | товар відсутній | |||||||||||||||||||
RGP10A-E3/73 | Vishay | Rectifier Diode Switching 50V 1A 150ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10A-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 50 Volt 150ns | товар відсутній | |||||||||||||||||||
RGP10A-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10A-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10AE-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL | товар відсутній | |||||||||||||||||||
RGP10AE-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL | товар відсутній | |||||||||||||||||||
RGP10AHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | товар відсутній | |||||||||||||||||||
RGP10AHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10AHM3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10AHM3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10B | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP10B | onsemi | Description: DIODE GEN PURP 100V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 14988 шт: термін постачання 21-31 дні (днів) |
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RGP10B | ONSEMI | Description: ONSEMI - RGP10B - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | на замовлення 25475 шт: термін постачання 21-31 дні (днів) |
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RGP10B | onsemi / Fairchild | Rectifiers 100V 1a Rectifier Glass Passivated | на замовлення 4566 шт: термін постачання 21-30 дні (днів) |
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RGP10B | ON Semiconductor | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10B | onsemi | Description: DIODE GEN PURP 100V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RGP10B | ON Semiconductor | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10B | на замовлення 200 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10B-E3/54 | Vishay General Semiconductor | Small Signal Switching Diodes 1.0A 100 Volt 150ns | на замовлення 13149 шт: термін постачання 21-30 дні (днів) |
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RGP10B-E3/54 | Vishay | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10B-E3/54 | Vishay | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10B-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 8625 шт: термін постачання 21-31 дні (днів) |
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RGP10B-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP10B-E3/54 | Vishay | Rectifier Diode Switching 100V 1A 150ns 2-Pin DO-41 T/R | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10B-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10B-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 100 Volt 150ns | товар відсутній | |||||||||||||||||||
RGP10B-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10B-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BE-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 100 Volt 150ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10BE-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10BE-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 100 Volt 150ns | на замовлення 8937 шт: термін постачання 21-30 дні (днів) |
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RGP10BE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10BE-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 100 Volt 150ns | товар відсутній | |||||||||||||||||||
RGP10BE-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP10BE-E3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BE-E354 | Vishay | Diode Switching 100V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10BE-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BE-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP10BEHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BEHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BEHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BEHE3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BHM3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10BHM3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1A DO204AL | товар відсутній | |||||||||||||||||||
RGP10D | ONSEMI | Description: ONSEMI - RGP10D - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | на замовлення 16277 шт: термін постачання 21-31 дні (днів) |
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RGP10D | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP10D | onsemi / Fairchild | Rectifiers DO-41 | товар відсутній | |||||||||||||||||||
RGP10D | ON Semiconductor | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10D | onsemi | Description: DIODE GEN PURP 200V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 7184 шт: термін постачання 21-31 дні (днів) |
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RGP10D | ON Semiconductor | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10D | ON Semiconductor | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RGP10D | на замовлення 21000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10D | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1A,200V,150NS,FS,SUPERECT | товар відсутній | |||||||||||||||||||
RGP10D | onsemi | Description: DIODE GEN PURP 200V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RGP10D | ON Semiconductor | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10D | ON Semiconductor | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RGP10D | ON Semiconductor | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RGP10D(=BYD33D) | на замовлення 20340 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10D-5020M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10D-5303M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10D-5310E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10D-5310M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10D-E3-23 | на замовлення 200000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10D-E3-73 | на замовлення 21000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10D-E3/23 | на замовлення 21000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10D-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10D-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 200 Volt 150ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10D-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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RGP10D-E3/54 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10D-E3/54 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10D-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 99 шт: термін постачання 21-31 дні (днів) |
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RGP10D-E3/54 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10D-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10D-E3/54 | Vishay General Semiconductor | Rectifiers 1.0A 200 Volt 150ns | на замовлення 8952 шт: термін постачання 21-30 дні (днів) |
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RGP10D-E3/73 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10D-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 1560 шт: термін постачання 21-31 дні (днів) |
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RGP10D-E3/73 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 Ammo | на замовлення 163 шт: термін постачання 21-31 дні (днів) |
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RGP10D-E3/73 | на замовлення 10000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10D-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 200 Volt 150ns | на замовлення 7898 шт: термін постачання 21-30 дні (днів) |
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RGP10D-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RGP10D-E3/73 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 Ammo | на замовлення 163 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||||
RGP10D-E3/73 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10D-E3/73 | Vishay | Rectifier Diode Switching 200V 1A 150ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10D-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10D-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DE | на замовлення 3000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10DE-031E3/93 | Vishay General Semiconductor - Diodes Division | Description: RECTIFIER Packaging: Bulk Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGP10DE-052E3/91 | Vishay General Semiconductor - Diodes Division | Description: RECTIFIER Packaging: Bulk Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGP10DE-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 200 Volt 150ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10DE-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DE-E3/54 | Vishay | Diode Switching 200V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10DE-E3/54 | Vishay | Diode Switching 200V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10DE-E3/54 | Vishay General Semiconductor | Rectifiers 1.0A 200 Volt 150ns | на замовлення 4874 шт: термін постачання 21-30 дні (днів) |
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RGP10DE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DE-E3/54 | Vishay | Diode Switching 200V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10DE-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 200 Volt 150ns | на замовлення 4851 шт: термін постачання 21-30 дні (днів) |
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RGP10DE-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DE-E3/91 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1.0A 200 Volt 150ns 30 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP10DE-E3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DE-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DE-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DEHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DEHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DEHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DEHE3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DHM3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10DHM3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP10G | ON Semiconductor | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10G | onsemi | Description: DIODE GEN PURP 400V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10G | ON Semiconductor | Rectifier Diode Switching 400V 1A 150ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10G | ONSEMI | Description: ONSEMI - RGP10G - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | на замовлення 49919 шт: термін постачання 21-31 дні (днів) |
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RGP10G | Fairchild Semiconductor | Description: DIODE GEN PURP 400V 1A DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 49919 шт: термін постачання 21-31 дні (днів) |
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RGP10G | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP10G | onsemi / Fairchild | Rectifiers 400V 1a Rectifier Glass Passivated | на замовлення 5540 шт: термін постачання 21-30 дні (днів) |
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RGP10G | ONSEMI | Description: ONSEMI - RGP10G - Diode mit Standard-Erholzeit, 400 V, 1 A, Einfach, 1.3 V, 150 ns, 30 A tariffCode: 85412900 Bauform - Diode: DO-41 (DO-204AL) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 150ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 400V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: Lead (14-Jun-2023) | на замовлення 5944 шт: термін постачання 21-31 дні (днів) |
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RGP10G | Fairchild(FSC) | - | на замовлення 900 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||
RGP10G | onsemi | Description: DIODE GEN PURP 400V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 1622 шт: термін постачання 21-31 дні (днів) |
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RGP10G-6038M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10G-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10G-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10G-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP10G-E3/54 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10G-E3/54 | на замовлення 22000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10G-E3/54 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10G-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns | на замовлення 8285 шт: термін постачання 21-30 дні (днів) |
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RGP10G-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 9796 шт: термін постачання 21-31 дні (днів) |
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RGP10G-E3/54 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10G-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns | на замовлення 23005 шт: термін постачання 21-30 дні (днів) |
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RGP10G-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RGP10G-E3/73 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10G-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10G-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10G-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GE-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GE-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10GE-E3/54 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10GE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10GE-E3/54 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10GE-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns | на замовлення 4798 шт: термін постачання 21-30 дні (днів) |
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RGP10GE-E3/54 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10GE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 11097 шт: термін постачання 21-31 дні (днів) |
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RGP10GE-E3/54 | Vishay | Diode Switching 400V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10GE-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns | товар відсутній | |||||||||||||||||||
RGP10GE-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GE-E3/73 | Vishay | Rectifier Diode Switching 400V 1A 150ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10GE-E3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GE-E3/91 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns 30 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP10GE-E3/93 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1.0A 400 Volt 150ns 30 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP10GE-E3/93 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GE-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GE-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GE3/TR13 | Microsemi | Fast Rectifier Diode | товар відсутній | |||||||||||||||||||
RGP10GEHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10GEHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GEHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GEHE3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10GEHE3/93 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10GHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10GHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP10GHM3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10GHM3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10J | ON Semiconductor | Rectifier Diode Switching 600V 1A 250ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10J | onsemi | Description: DIODE GEN PURP 600V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J Код товару: 133264 | Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні | товар відсутній | ||||||||||||||||||||
RGP10J | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP10J | ON Semiconductor | Rectifier Diode Switching 600V 1A 250ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10J | onsemi / Fairchild | Rectifiers 600V 1a Rectifier Glass Passivated | на замовлення 16698 шт: термін постачання 21-30 дні (днів) |
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RGP10J | на замовлення 417200 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10J | onsemi | Description: DIODE GEN PURP 600V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 7088 шт: термін постачання 21-31 дні (днів) |
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RGP10J-057M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J-5025M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J-6039 | на замовлення 17500 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10J-7008M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J-E3 | на замовлення 900 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10J-E3-73 | на замовлення 200000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10J-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 600 Volt 250ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10J-E3/54 | Vishay | Diode Switching 600V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10J-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 5384 шт: термін постачання 21-31 дні (днів) |
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RGP10J-E3/54 | Vishay | Diode Switching 600V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10J-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 600 Volt 250ns | на замовлення 9636 шт: термін постачання 21-30 дні (днів) |
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RGP10J-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RGP10J-E3/73 | на замовлення 3080 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10J-E3/73 | Vishay General Semiconductor | Small Signal Switching Diodes 1.0A 600 Volt 250ns | на замовлення 8118 шт: термін постачання 21-30 дні (днів) |
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RGP10J-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J-E3/73 | Vishay | Rectifier Diode Switching 600V 1A 250ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10J-E373 | Vishay | Rectifier Diode Switching 600V 1A 250ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10J-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10J-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JE-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JE-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 600 Volt 250ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10JE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10JE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10JE-E3/54 | Vishay General Semiconductor | Small Signal Switching Diodes 1.0A 600 Volt 250ns | на замовлення 5912 шт: термін постачання 21-30 дні (днів) |
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RGP10JE-E3/54 | Vishay | Diode Switching 600V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10JE-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 600 Volt 250ns | товар відсутній | |||||||||||||||||||
RGP10JE-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JE-E3/91 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1.0A 600 Volt 250ns 30 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP10JE-E3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JE-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JE-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JEHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10JEHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JEHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JEHE3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10JHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10JHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10JHM3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10JHM3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10JL | VISHAY | SOT23 | на замовлення 30000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||
RGP10K | ON Semiconductor | Rectifier Diode Switching 800V 1A 500ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10K | onsemi | Description: DIODE GEN PURP 800V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | на замовлення 3530 шт: термін постачання 21-31 дні (днів) |
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RGP10K | на замовлення 10000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10K | ON Semiconductor | Rectifier Diode Switching 800V 1A 500ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10K | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP10K | onsemi | Description: DIODE GEN PURP 800V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10K | onsemi / Fairchild | Rectifiers 800V 1a Rectifier Glass Passivated | на замовлення 4984 шт: термін постачання 21-30 дні (днів) |
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RGP10K | ONSEMI | Description: ONSEMI - RGP10K - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | на замовлення 10055 шт: термін постачання 21-31 дні (днів) |
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RGP10K-5008M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10K-E3/53 | Vishay | Rectifier Diode Switching 800V 1A 500ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10K-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 800 Volt 500ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10K-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10K-E3/54 | Vishay | Rectifier Diode Switching 800V 1A 500ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10K-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 800 Volt 500ns | товар відсутній | |||||||||||||||||||
RGP10K-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10K-E3/73 | Vishay | Rectifier Diode Switching 800V 1A 500ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10K-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 800 Volt 500ns | товар відсутній | |||||||||||||||||||
RGP10K-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10K-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10K-M3/73 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1A, 800V, 500NS, FS, SUPERECT | товар відсутній | |||||||||||||||||||
RGP10K-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KE-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KE-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 800 Volt 500ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10KE-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 800 Volt 500ns | товар відсутній | |||||||||||||||||||
RGP10KE-E3/54 | Vishay | Diode Switching 800V 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10KE-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KE-E3/73 | Vishay | Rectifier Diode Switching 800V 1A 500ns 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10KE-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KE-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 800 Volt 500ns | товар відсутній | |||||||||||||||||||
RGP10KE-E3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KE-E3/91 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1.0A 800 Volt 500ns 30 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP10KE-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KE-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KEHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10KEHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KEHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KEHE3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KHM3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10KHM3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP10M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M | onsemi / Fairchild | Rectifiers 1000V 1a Rectifier Glass Passivated | на замовлення 66304 шт: термін постачання 21-30 дні (днів) |
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RGP10M Код товару: 111016 | Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні | товар відсутній | ||||||||||||||||||||
RGP10M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-41 T/R | на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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RGP10M | onsemi | Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RGP10M | EIC Semiconductor | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP10M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M | ONSEMI | Description: ONSEMI - RGP10M - Diode mit Standard-Erholzeit, 1 kV, 1 A, Einfach, 1.3 V, 500 ns, 30 A tariffCode: 85411000 Bauform - Diode: DO-41 (DO-204AL) Durchlassstoßstrom: 30A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.3V Sperrverzögerungszeit: 500ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1kV Anzahl der Pins: 2Pin(s) Produktpalette: RGP10 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: Lead (23-Jan-2024) | товар відсутній | |||||||||||||||||||
RGP10M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-41 T/R | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RGP10M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M | onsemi | Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 9869 шт: термін постачання 21-31 дні (днів) |
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RGP10M | ON Semiconductor | Rectifier Diode Switching 1KV 1A 500ns 2-Pin DO-41 T/R | на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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RGP10M-5010E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10M-5304M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10M-7008E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10M-7008E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10M-7008M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10M-E3 | на замовлення 30000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10M-E3-23 | на замовлення 200000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10M-E3-73 | на замовлення 200000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10M-E3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10M-E3/53 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 1000 Volt 500ns Trim Leads | товар відсутній | |||||||||||||||||||
RGP10M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 5500 шт: термін постачання 21-31 дні (днів) |
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RGP10M-E3/54 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0 Amp 1000 Volt | на замовлення 11254 шт: термін постачання 21-30 дні (днів) |
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RGP10M-E3/54 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M-E3/54 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 11229 шт: термін постачання 21-31 дні (днів) |
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RGP10M-E3/54 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 T/R | товар відсутній | |||||||||||||||||||
RGP10M-E3/54 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 T/R | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10M-E3/54 | на замовлення 100 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10M-E3/54 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 T/R | на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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RGP10M-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 5874 шт: термін постачання 21-31 дні (днів) |
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RGP10M-E3/73 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 Ammo | на замовлення 2574 шт: термін постачання 21-31 дні (днів) |
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RGP10M-E3/73 | VISHAY | на замовлення 12000 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||||||
RGP10M-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10M-E3/73 | Vishay General Semiconductor | Small Signal Switching Diodes 1.0A 1000 Volt 500ns | на замовлення 16276 шт: термін постачання 21-30 дні (днів) |
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RGP10M-E3/73 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10M-E373 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10M-E373 | Vishay | Diode Switching 1KV 1A 2-Pin DO-41 Ammo | товар відсутній | |||||||||||||||||||
RGP10M-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10M-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10ME-E3/41 | на замовлення 50000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP10ME-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 1.0A 1000 Volt 500ns | товар відсутній | |||||||||||||||||||
RGP10ME-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10ME-E3/73 | Vishay General Semiconductor | Small Signal Switching Diodes 1.0A 1000 Volt 500ns | на замовлення 10744 шт: термін постачання 21-30 дні (днів) |
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RGP10ME-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 1560 шт: термін постачання 21-31 дні (днів) |
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RGP10ME-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RGP10ME-E3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10ME-E3/91 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 1.0A 1000 Volt 500ns 30 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP10ME-M3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP10ME-M3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10MEHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10MEHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10MEHE3/91 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10MHE3/53 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10MHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10MHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP10MHM3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP10MHM3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGP15A | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP15A | NTE Electronics, Inc | Description: DIODE GEN PURP 50V 1.5A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | на замовлення 2012 шт: термін постачання 21-31 дні (днів) |
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RGP15A-E3/54 | Vishay General Semiconductor | Rectifiers 50 Volt 1.5A 150ns 50 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP15A-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | товар відсутній | |||||||||||||||||||
RGP15A-E354 | Vishay | Rectifier Diode Switching 50V 1.5A 150ns 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15AHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | товар відсутній | |||||||||||||||||||
RGP15B | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP15B | NTE Electronics, Inc | Description: DIODE GEN PURP 100V 1.5A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 422 шт: термін постачання 21-31 дні (днів) |
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RGP15B-E3/54 | Vishay | Diode Switching 100V 1.5A 2-Pin DO-15 T/R | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP15B-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP15B-E3/54 | Vishay | Diode Switching 100V 1.5A 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15B-E3/54 | Vishay | Diode Switching 100V 1.5A 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15B-E3/54 | Vishay General Semiconductor | Rectifiers 100 Volt 1.5A 150ns 50 Amp IFSM | на замовлення 9447 шт: термін постачання 21-30 дні (днів) |
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RGP15B-E3/54 | Vishay | Diode Switching 100V 1.5A 2-Pin DO-15 T/R | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP15B-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1.5A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 7832 шт: термін постачання 21-31 дні (днів) |
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RGP15B-E3/73 | Vishay General Semiconductor | Rectifiers 100 Volt 1.5A 150ns 50 Amp IFSM | на замовлення 4040 шт: термін постачання 21-30 дні (днів) |
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RGP15B-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP15B-E373 | Vishay | Rectifier Diode Switching 100V 1.5A 150ns 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15BHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP15BHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP15D | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP15D | NTE Electronics, Inc | Description: DIODE GEN PURP 200V 1.5A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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RGP15D | на замовлення 7000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP15D-E3/54 | Vishay | Rectifier Diode Switching 200V 1.5A 150ns 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15D-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP15D-E3/54 | Vishay General Semiconductor | Rectifiers 200 Volt 1.5A 150ns 50 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP15D-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP15D-E3/73 | Vishay General Semiconductor | Rectifiers 200 Volt 1.5A 150ns 50 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP15D-E373 | Vishay | Rectifier Diode Switching 200V 1.5A 150ns 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15DHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP15DHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP15G | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP15G | на замовлення 100 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP15G | NTE Electronics, Inc | Description: DIODE GEN PURP 400V 1.5A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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RGP15G-E3/54 | Vishay | Diode Switching 400V 1.5A 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15G-E3/54 | Vishay General Semiconductor | Rectifiers 1.5 Amp 400 Volt | на замовлення 8607 шт: термін постачання 21-30 дні (днів) |
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RGP15G-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 13035 шт: термін постачання 21-31 дні (днів) |
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RGP15G-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RGP15G-E3/73 | Vishay | Diode Switching 400V 1.5A 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15G-E3/73 | Vishay General Semiconductor | Rectifiers 400 Volt 1.5A 150ns 50 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP15G-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP15G-E373 | Vishay | Diode Switching 400V 1.5A 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15GE3/TR13 | Microsemi | Fast Rectifier Diode | товар відсутній | |||||||||||||||||||
RGP15GHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP15GHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP15GL-5011 | на замовлення 46500 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP15J | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP15J | Vishay Semiconductors | Small Signal Switching Diodes | товар відсутній | |||||||||||||||||||
RGP15J | VISHAY | 09+ | на замовлення 45018 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||
RGP15J | NTE Electronics, Inc | Description: DIODE GEN PURP 600V 1.5A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 3154 шт: термін постачання 21-31 дні (днів) |
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RGP15J-5012E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP15J-E3/54 | Vishay | Diode Switching 600V 1.5A 2-Pin DO-15 T/R | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP15J-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 7452 шт: термін постачання 21-31 дні (днів) |
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RGP15J-E3/54 Код товару: 172966 | Діоди, діодні мости, стабілітрони > Діоди випрямні й імпульсні | товар відсутній | ||||||||||||||||||||
RGP15J-E3/54 | Vishay | Diode Switching 600V 1.5A 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15J-E3/54 | Vishay | Diode Switching 600V 1.5A 2-Pin DO-15 T/R | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP15J-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP15J-E3/54 | Vishay General Semiconductor | Rectifiers 600 Volt 1.5A 250ns 50 Amp IFSM | на замовлення 12056 шт: термін постачання 21-30 дні (днів) |
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RGP15J-E3/54 | на замовлення 40900 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP15J-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RGP15J-E3/73 | Vishay | Rectifier Diode Switching 600V 1.5A 250ns 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15J-E3/73 | Vishay General Semiconductor | Rectifiers 600 Volt 1.5A 250ns 50 Amp IFSM | на замовлення 4768 шт: термін постачання 21-30 дні (днів) |
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RGP15J-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 1323 шт: термін постачання 21-31 дні (днів) |
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RGP15J-E3/73 | VISHAY | Description: VISHAY - RGP15J-E3/73 - Diode mit Standard-Erholzeit, 600 V, 1.5 A, Einfach, 1.3 V, 250 ns, 50 A Bauform - Diode: DO-41 (DO-204AL) Durchlassstoßstrom: 50 Durchlassspannung Vf max.: 1.3 Diodenkonfiguration: Einfach Sperrerholzeit Trr, max.: 250 Qualifikation: - Durchlassspannung, max.: 1.3 Sperrverzögerungszeit: 250 Durchschnittlicher Durchlassstrom: 1.5 Wiederkehrende Spitzensperrspannung: 600 Durchlassstrom (mittlerer) If(AV): 1.5 Anzahl der Pins: 2 Produktpalette: RGP15 Spitzendurchlassstrom Ifsm, max.: 50 Betriebstemperatur, max.: 175 Periodische Sperrspannung Vrrm, max.: 600 SVHC: Lead (15-Jan-2019) | товар відсутній | |||||||||||||||||||
RGP15J-E373 | Vishay | Rectifier Diode Switching 600V 1.5A 250ns 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15JE3/TR13 | Microsemi | Fast Rectifier Diode | товар відсутній | |||||||||||||||||||
RGP15JHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP15JHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP15JL-6307E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGP15K | на замовлення 10000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP15K | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP15K-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP15K-E3/54 | Vishay General Semiconductor | Rectifiers 800 Volt 1.5A 500ns 50 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP15K-E3/54 | Vishay | Rectifier Diode Switching 800V 1.5A 150ns 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15K-E3/73 | Vishay | Rectifier Diode Switching 800V 1.5A 150ns 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15K-E3/73 | Vishay | Rectifier Diode Switching 800V 1.5A 150ns 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15K-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP15K-E3/73 | Vishay General Semiconductor | Rectifiers 800 Volt 1.5A 500ns 50 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP15K-E354 | Vishay | Rectifier Diode Switching 800V 1.5A 150ns 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15KHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP15KHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP15M | на замовлення 6000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP15M | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP15M | NTE Electronics, Inc | Description: DIODE GEN PURP 1KV 1.5A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 982 шт: термін постачання 21-31 дні (днів) |
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RGP15M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RGP15M-E3/54 | Vishay General Semiconductor | Rectifiers 1000 Volt 1.5A 500ns 50 Amp IFSM | на замовлення 4632 шт: термін постачання 21-30 дні (днів) |
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RGP15M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1.5A DO204AC Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 5052 шт: термін постачання 21-31 дні (днів) |
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RGP15M-E3/54 | Vishay | Rectifier Diode Switching 1KV 1.5A 500ns 2-Pin DO-15 T/R | товар відсутній | |||||||||||||||||||
RGP15M-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP15M-E3/73 | Vishay | Diode Switching 1KV 1.5A 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15M-E3/73 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 50A; DO15; 500ns Kind of package: Ammo Pack Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 1.5A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 50A Leakage current: 0.2mA Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: THT Case: DO15 Capacitance: 25pF кількість в упаковці: 2000 шт | товар відсутній | |||||||||||||||||||
RGP15M-E3/73 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1.5A; Ammo Pack; Ifsm: 50A; DO15; 500ns Kind of package: Ammo Pack Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 1.5A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 50A Leakage current: 0.2mA Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: THT Case: DO15 Capacitance: 25pF | товар відсутній | |||||||||||||||||||
RGP15M-E3/73 | Vishay General Semiconductor | Rectifiers 1000 Volt 1.5A 500ns 50 Amp IFSM | на замовлення 3887 шт: термін постачання 21-30 дні (днів) |
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RGP15M-E373 | Vishay | Diode Switching 1KV 1.5A 2-Pin DO-15 Ammo | товар відсутній | |||||||||||||||||||
RGP15MHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP15MHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 1.5A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP20A-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 50V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20A-E3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 50V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20AHE3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 50V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20AHE3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 50V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20B-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 100V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20B-E3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 100V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20B60PDPBF | на замовлення 6000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP20BHE3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 100V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20BHE3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 100V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20D | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP20D | на замовлення 200 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP20D-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 200V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20D-E3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 200V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20DHE3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 200V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20DHE3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 200V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20G | EIC | FAST RECOVERY RECTIFIERS | товар відсутній | |||||||||||||||||||
RGP20G | Vishay Semiconductors | Rectifiers 2A,400V,150NS,FS,SUPERECT | товар відсутній | |||||||||||||||||||
RGP20G-E3 | Vishay Semiconductors | Rectifiers 2A,400V,150NS,FS,SUPERECT | товар відсутній | |||||||||||||||||||
RGP20G-E3/23 | Vishay Semiconductors | Rectifiers 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20G-E3/4 | Vishay Semiconductors | Rectifiers 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20G-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20G-E3/54 | Vishay Semiconductors | Rectifiers 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20G-E3/73 | Vishay Semiconductors | Rectifiers 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20G-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20G/23 | Vishay Semiconductors | Rectifiers 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20G/4 | Vishay Semiconductors | Rectifiers 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20G/54 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20GHE3 | Vishay Semiconductors | Rectifiers 2A,400V,150NS,FS,SUPERECT | товар відсутній | |||||||||||||||||||
RGP20GHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20GHE3/54 | Vishay Semiconductors | Rectifiers 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20GHE3/73 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 400 Volt 2.0A 150ns 80 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP20GHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20J-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 600V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20J-E3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 600V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20JHE3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 600V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP20JHE3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 600V 2A GP20 | товар відсутній | |||||||||||||||||||
RGP25B-E3/54 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 100 Volt 2.5A 150ns 100 Amp IFSM | на замовлення 1673 шт: термін постачання 21-30 дні (днів) |
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RGP25B-E3/54 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 100 Volt 2.5A 150ns 100 Amp IFSM | на замовлення 251 шт: термін постачання 21-30 дні (днів) | |||||||||||||||||||
RGP25B-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 100V 2.5A DO201AD | товар відсутній | |||||||||||||||||||
RGP25BHE3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 100V 2.5A DO201AD | товар відсутній | |||||||||||||||||||
RGP25J | на замовлення 4500 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP25J-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE 2.5A 600V 250NS DO-201AD | товар відсутній | |||||||||||||||||||
RGP25J-E3/54 | Vishay Semiconductors | Rectifiers 2.5A, 600V, 250NS, FS, SUPERECT | товар відсутній | |||||||||||||||||||
RGP25J-E3/73 | Vishay Semiconductors | Rectifiers 2.5A, 600V, 250NS, FS, SUPERECT | товар відсутній | |||||||||||||||||||
RGP25J-E3/73 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 600V 1A DO201AD | товар відсутній | |||||||||||||||||||
RGP25K-E3/54 | Vishay Semiconductors | Rectifiers 800 Volt 2.5A 500ns 100 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP25K-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 800V 2.5A DO201AD | товар відсутній | |||||||||||||||||||
RGP25KHE3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 800V 2.5A DO201AD | товар відсутній | |||||||||||||||||||
RGP25M | Vishay Semiconductors | Rectifiers 2.5A,1000V,500NS,FS,SUPERECT | товар відсутній | |||||||||||||||||||
RGP25M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 2.5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 3133 шт: термін постачання 21-31 дні (днів) |
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RGP25M-E3/54 | Vishay | Rectifier Diode Switching 1KV 2.5A 500ns 2-Pin Case C-16 T/R | на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
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RGP25M-E3/54 | Vishay General Semiconductor | Rectifiers 1000 Volt 2.5A 500ns 100 Amp IFSM | на замовлення 2754 шт: термін постачання 21-30 дні (днів) |
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RGP25M-E3/54 | Vishay | Rectifier Diode Switching 1KV 2.5A 500ns 2-Pin Case C-16 T/R | на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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RGP25M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 2.5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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RGP25M-E3/54 | Vishay | Rectifier Diode Switching 1KV 2.5A 500ns 2-Pin Case C-16 T/R | на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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RGP25M-E3/54 | Vishay | Rectifier Diode Switching 1KV 2.5A 500ns 2-Pin Case C-16 T/R | на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
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RGP25M-E3/54 | Vishay | Rectifier Diode Switching 1KV 2.5A 500ns 2-Pin Case C-16 T/R | товар відсутній | |||||||||||||||||||
RGP25MHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 2.5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP30A | на замовлення 50000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30A-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | товар відсутній | |||||||||||||||||||
RGP30A-E3/54 | Vishay General Semiconductor | Rectifiers 50 Volt 3.0A 150ns 125 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP30AHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 50V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V | товар відсутній | |||||||||||||||||||
RGP30B | NTE Electronics, Inc | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 361 шт: термін постачання 21-31 дні (днів) |
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RGP30B | на замовлення 470 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30B-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP30B-E3/54 | Vishay General Semiconductor | Rectifiers 100 Volt 3.0A 150ns 125 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP30B-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP30B-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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RGP30B-E3/73 | Vishay | Rectifier Diode Switching 100V 3A 150ns 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30B-E3/73 | Vishay General Semiconductor | Small Signal Switching Diodes 100 Volt 3.0A 150ns 125 Amp IFSM | на замовлення 1766 шт: термін постачання 21-30 дні (днів) |
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RGP30BHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP30BHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP30BL-5302 | на замовлення 31000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30BL-E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP30BLHE3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Bulk Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V | товар відсутній | |||||||||||||||||||
RGP30D | NTE Electronics, Inc | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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RGP30D | на замовлення 100 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30D(=BYW95A) | на замовлення 10946 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30D-E3/54 | Vishay | Rectifier Diode Switching 200V 3A 150ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30D-E3/54 | Vishay General Semiconductor | Rectifiers 200 Volt 3.0A 150ns 125 Amp IFSM | на замовлення 1975 шт: термін постачання 21-30 дні (днів) |
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RGP30D-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP30D-E3/54 | Vishay | Rectifier Diode Switching 200V 3A 150ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30D-E3/54 | Vishay | Rectifier Diode Switching 200V 3A 150ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30D-E3/73 | Vishay General Semiconductor | Small Signal Switching Diodes 200 Volt 3.0A 150ns 125 Amp IFSM | на замовлення 1408 шт: термін постачання 21-30 дні (днів) |
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RGP30D-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 381 шт: термін постачання 21-31 дні (днів) |
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RGP30D-E3/73 | Vishay | Rectifier Diode Switching 200V 3A 150ns 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30D-E3/73 | Vishay | Rectifier Diode Switching 200V 3A 150ns 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30D-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RGP30DE3/TR13 | Microsemi | Fast Rectifier Diode | товар відсутній | |||||||||||||||||||
RGP30DHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP30DHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | товар відсутній | |||||||||||||||||||
RGP30G | на замовлення 1490 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30G | NTE Electronics, Inc | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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RGP30G | Vishay Semiconductors | Rectifiers 3A,400V,150NS,FS,SUPERECT | товар відсутній | |||||||||||||||||||
RGP30G-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 150ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30G-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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RGP30G-E3/54 | Vishay General Semiconductor | Small Signal Switching Diodes 400 Volt 3.0A 150ns 125 Amp IFSM | на замовлення 2613 шт: термін постачання 21-30 дні (днів) |
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RGP30G-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 150ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30G-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 150ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30G-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 4043 шт: термін постачання 21-31 дні (днів) |
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RGP30G-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGP30G-E3/73 | Vishay | Rectifier Diode Switching 400V 3A 150ns 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30G-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | на замовлення 796 шт: термін постачання 21-31 дні (днів) |
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RGP30G-E3/73 | Vishay General Semiconductor | Small Signal Switching Diodes 400 Volt 3.0A 150ns 125 Amp IFSM | на замовлення 2619 шт: термін постачання 21-30 дні (днів) |
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RGP30GE3/TR13 | Microsemi | Fast Rectifier Diode | товар відсутній | |||||||||||||||||||
RGP30GHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP30GHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | товар відсутній | |||||||||||||||||||
RGP30GL-5001E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGP30GL-5003E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGP30J | NTE Electronics, Inc | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Bag Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 166 шт: термін постачання 21-31 дні (днів) |
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RGP30J | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 3A,600V,250NS,FS,SUPERECT | товар відсутній | |||||||||||||||||||
RGP30J | на замовлення 21000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30J-E3/54 | Vishay | Diode Switching 600V 3A 2-Pin DO-201AD T/R | на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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RGP30J-E3/54 | Vishay General Semiconductor | Rectifiers 600 Volt 3.0A 250ns 125 Amp IFSM | на замовлення 3350 шт: термін постачання 21-30 дні (днів) |
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RGP30J-E3/54 | Vishay | Diode Switching 600V 3A 2-Pin DO-201AD T/R | на замовлення 2795 шт: термін постачання 21-31 дні (днів) |
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RGP30J-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 3772 шт: термін постачання 21-31 дні (днів) |
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RGP30J-E3/54 | Vishay | Diode Switching 600V 3A 2-Pin DO-201AD T/R | на замовлення 2795 шт: термін постачання 21-31 дні (днів) |
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RGP30J-E3/54 | Vishay | Diode Switching 600V 3A 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30J-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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RGP30J-E3/54 | Vishay | Diode Switching 600V 3A 2-Pin DO-201AD T/R | на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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RGP30J-E3/73 | Vishay | Rectifier Diode Switching 600V 3A 250ns 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30J-E3/73 | на замовлення 200000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30J-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 600 Volt 3.0A 250ns 125 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP30J-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP30JHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP30JHE3/54 | Vishay | Rectifier Diode Switching 600V 3A 150ns Automotive 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30JHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | товар відсутній | |||||||||||||||||||
RGP30JHE3/73 | Vishay | Rectifier Diode Switching 600V 3A 150ns Automotive 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30K | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 500ns 2-Pin DO-201 Ammo | товар відсутній | |||||||||||||||||||
RGP30K | Diotec Semiconductor | Rectifiers Diode, Fast, DO-201, 800V, 3A, 150C | товар відсутній | |||||||||||||||||||
RGP30K | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 100A; DO201; 0.5us Case: DO201 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: fast switching Reverse recovery time: 0.5µs Type of diode: rectifying Max. load current: 20A Max. forward voltage: 1.2V Load current: 3A Max. forward impulse current: 100A Leakage current: 5µA | товар відсутній | |||||||||||||||||||
RGP30K | EIC | FAST SWITCHING RECTIFIERS | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGP30K | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP30K | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 500ns 2-Pin DO-201 Ammo | товар відсутній | |||||||||||||||||||
RGP30K | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 100A; DO201; 0.5us Case: DO201 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: fast switching Reverse recovery time: 0.5µs Type of diode: rectifying Max. load current: 20A Max. forward voltage: 1.2V Load current: 3A Max. forward impulse current: 100A Leakage current: 5µA кількість в упаковці: 5 шт | товар відсутній | |||||||||||||||||||
RGP30K | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 500ns 2-Pin DO-201 Ammo | товар відсутній | |||||||||||||||||||
RGP30K-5701 | на замовлення 2600 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP30K-E3/54 | Vishay | Rectifier Diode Switching 800V 3A 500ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30K-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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RGP30K-E3/54 | Vishay | Rectifier Diode Switching 800V 3A 500ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30K-E3/54 | Vishay | Rectifier Diode Switching 800V 3A 500ns 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30K-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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RGP30K-E3/54 | Vishay General Semiconductor | Rectifiers 800 Volt 3.0A 500ns 125 Amp IFSM | на замовлення 2544 шт: термін постачання 21-30 дні (днів) |
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RGP30K-E3/73 | Vishay | Diode Switching 800V 3A 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30K-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP30K-E3/73 | Vishay General Semiconductor | Diodes - General Purpose, Power, Switching 800 Volt 3.0A 500ns 125 Amp IFSM | товар відсутній | |||||||||||||||||||
RGP30K-E3/73 | Vishay | Diode Switching 800V 3A 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30KHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP30KHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | товар відсутній | |||||||||||||||||||
RGP30KL-6423E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) | товар відсутній | |||||||||||||||||||
RGP30M | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA Case: DO201 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Max. off-state voltage: 1kV Features of semiconductor devices: fast switching Reverse recovery time: 0.5µs Type of diode: rectifying Max. load current: 20A Max. forward voltage: 1.2V Load current: 3A Max. forward impulse current: 100A Leakage current: 5µA | на замовлення 3230 шт: термін постачання 21-30 дні (днів) |
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RGP30M | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA Case: DO201 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Max. off-state voltage: 1kV Features of semiconductor devices: fast switching Reverse recovery time: 0.5µs Type of diode: rectifying Max. load current: 20A Max. forward voltage: 1.2V Load current: 3A Max. forward impulse current: 100A Leakage current: 5µA кількість в упаковці: 10 шт | на замовлення 3230 шт: термін постачання 14-21 дні (днів) |
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RGP30M | Diotec Semiconductor | Rectifiers Diode, Fast, DO-201, 1000V, 3A, 150C | на замовлення 3728 шт: термін постачання 21-30 дні (днів) |
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RGP30M | Diotec Semiconductor | Rectifier Diode Switching 1KV 3A 500ns 2-Pin DO-201 Ammo | товар відсутній | |||||||||||||||||||
RGP30M | Diotec Semiconductor | Rectifier Diode Switching 1KV 3A 500ns 2-Pin DO-201 Ammo | товар відсутній | |||||||||||||||||||
RGP30M | Diotec Semiconductor | Description: DIODE GEN PURP 1000V 3A DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP30M | Diotec Semiconductor | Rectifier Diode Switching 1KV 3A 500ns 2-Pin DO-201 Ammo | товар відсутній | |||||||||||||||||||
RGP30M | Diotec Semiconductor | Rectifier Diode Switching 1KV 3A 500ns 2-Pin DO-201 Ammo | товар відсутній | |||||||||||||||||||
RGP30M | Diotec Semiconductor | Description: DIODE GEN PURP 1000V 3A DO201 Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 1690 шт: термін постачання 21-31 дні (днів) |
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RGP30M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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RGP30M-E3/54 | Vishay | Diode Switching 1KV 3A 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30M-E3/54 | Vishay | Diode Switching 1KV 3A 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30M-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 3182 шт: термін постачання 21-31 дні (днів) |
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RGP30M-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 125A; DO201AD Case: DO201AD Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1kV Features of semiconductor devices: fast switching; glass passivated Reverse recovery time: 0.5µs Type of diode: rectifying Max. forward voltage: 1.3V Load current: 3A Max. forward impulse current: 125A | на замовлення 2200 шт: термін постачання 21-30 дні (днів) |
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RGP30M-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; reel,tape; Ifsm: 125A; DO201AD Case: DO201AD Mounting: THT Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1kV Features of semiconductor devices: fast switching; glass passivated Reverse recovery time: 0.5µs Type of diode: rectifying Max. forward voltage: 1.3V Load current: 3A Max. forward impulse current: 125A кількість в упаковці: 1 шт | на замовлення 2200 шт: термін постачання 14-21 дні (днів) |
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RGP30M-E3/54 | Vishay General Semiconductor | Rectifiers 1000 Volt 3.0A 500ns 125 Amp IFSM | на замовлення 10890 шт: термін постачання 21-30 дні (днів) |
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RGP30M-E3/54 | Vishay | Diode Switching 1KV 3A 2-Pin DO-201AD T/R | товар відсутній | |||||||||||||||||||
RGP30M-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RGP30M-E3/73 | Vishay General Semiconductor | Small Signal Switching Diodes 1000 Volt 3.0A 500ns 125 Amp IFSM | на замовлення 5482 шт: термін постачання 21-30 дні (днів) |
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RGP30M-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | на замовлення 857 шт: термін постачання 21-31 дні (днів) |
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RGP30M-E3/73 | Vishay | Rectifier Diode Switching 1KV 3A 500ns 2-Pin DO-201AD Ammo | товар відсутній | |||||||||||||||||||
RGP30MHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP30MHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | товар відсутній | |||||||||||||||||||
RGP30ML-6884E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGP30ML-6888E3/72 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURPOSE DO-204AL Packaging: Tape & Box (TB) Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGP5020-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 500MA AXIAL | товар відсутній | |||||||||||||||||||
RGP5020-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 500MA AXIAL | товар відсутній | |||||||||||||||||||
RGP5020HE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 500MA AXIAL | товар відсутній | |||||||||||||||||||
RGP5020HE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 500MA AXIAL | товар відсутній | |||||||||||||||||||
RGP50D | на замовлення 22000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP50G | на замовлення 22000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP50J | на замовлення 22000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP50K | на замовлення 22000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP50M | на замовлення 100 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP5100-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 500MA AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: Axial Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V | товар відсутній | |||||||||||||||||||
RGP5100-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 500MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: Axial Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V | товар відсутній | |||||||||||||||||||
RGP5100HE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 500MA AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: Axial Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V | товар відсутній | |||||||||||||||||||
RGP5100HE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1KV 500MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: Axial Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V | товар відсутній | |||||||||||||||||||
RGP80D | на замовлення 4580 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP80G | на замовлення 4580 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGP80J | на замовлення 4580 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||||||
RGPR10BM40FHTL | Rohm Semiconductor | Description: IGBT | на замовлення 1250 шт: термін постачання 21-31 дні (днів) |
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RGPR10BM40FHTL | Rohm Semiconductor | Description: IGBT | товар відсутній | |||||||||||||||||||
RGPR10BM40FHTL | ROHM Semiconductor | IGBTs 430V 20A 1.6V Vce Ignition IGBT | на замовлення 4902 шт: термін постачання 21-30 дні (днів) |
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RGPR20NL43HRTL | Rohm Semiconductor | Trans IGBT Chip N-CH 460V 20A 107W 3-Pin(2+Tab) LPDL T/R Automotive AEC-Q101 | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGPR20NL43HRTL | Rohm Semiconductor | Description: 430V 20A, LPDL, IGNITION IGBT FO Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 5V, 10A Supplier Device Package: TO-263L Td (on/off) @ 25°C: 170ns/1.3µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W | на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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RGPR20NL43HRTL | ROHM Semiconductor | IGBTs 430V 20A, LPDL, Ignition IGBT for Automotive | на замовлення 1988 шт: термін постачання 21-30 дні (днів) |
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RGPR20NL43HRTL | Rohm Semiconductor | Description: 430V 20A, LPDL, IGNITION IGBT FO Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 5V, 10A Supplier Device Package: TO-263L Td (on/off) @ 25°C: 170ns/1.3µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W | товар відсутній | |||||||||||||||||||
RGPR20NL43HRTL | Rohm Semiconductor | Trans IGBT Chip N-CH 460V 20A 107W 3-Pin(2+Tab) LPDL T/R Automotive AEC-Q101 | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGPR20NS43HRTL | ROHM Semiconductor | IGBTs 430V 20A 1.6V Vce Ignition IGBT | на замовлення 730 шт: термін постачання 21-30 дні (днів) |
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RGPR20NS43HRTL | ROHM | Description: ROHM - RGPR20NS43HRTL - IGBT, 20 A, 1.6 V, 107 W, 460 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 460V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 20A SVHC: Lead (23-Jan-2024) | на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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RGPR20NS43HRTL | Rohm Semiconductor | Trans IGBT Chip N-CH 460V 20A 107000mW Automotive 3-Pin(2+Tab) LPDS T/R | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGPR20NS43HRTL | Rohm Semiconductor | Description: IGBT 460V 20A IGNITION LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: LPDS Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Grade: Automotive Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W Qualification: AEC-Q101 | на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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RGPR20NS43HRTL | ROHM | Description: ROHM - RGPR20NS43HRTL - IGBT, 20 A, 1.6 V, 107 W, 460 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 460V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 20A SVHC: Lead (23-Jan-2024) | на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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RGPR20NS43HRTL | Rohm Semiconductor | Description: IGBT 460V 20A IGNITION LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: LPDS Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Grade: Automotive Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGPR30BM40HRTL | Rohm Semiconductor | Description: IGBT 430V 30A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 22 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W Grade: Automotive Qualification: AEC-Q101 | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RGPR30BM40HRTL | ROHM SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 30A; 125W; TO252 Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 30A Power dissipation: 125W Case: TO252 Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 1µs Turn-off time: 9.5µs Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems | товар відсутній | |||||||||||||||||||
RGPR30BM40HRTL Код товару: 194391 | Транзистори > IGBT | товар відсутній | ||||||||||||||||||||
RGPR30BM40HRTL | Rohm Semiconductor | Description: IGBT 430V 30A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 22 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W Grade: Automotive Qualification: AEC-Q101 | на замовлення 4926 шт: термін постачання 21-31 дні (днів) |
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RGPR30BM40HRTL | ROHM Semiconductor | IGBTs 400V 30A 1.6V Vce Ignition IGBT | на замовлення 7850 шт: термін постачання 21-30 дні (днів) |
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RGPR30BM40HRTL | ROHM SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 430V; 30A; 125W; TO252 Type of transistor: IGBT Collector-emitter voltage: 430V Collector current: 30A Power dissipation: 125W Case: TO252 Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Turn-on time: 1µs Turn-off time: 9.5µs Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: automotive industry; ignition systems кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||||||
RGPR30NS40HRTL | Rohm Semiconductor | Description: IGBT 430V 30A IGNITION LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: LPDS Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 22 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W Grade: Automotive Qualification: AEC-Q101 | товар відсутній | |||||||||||||||||||
RGPR30NS40HRTL | ROHM Semiconductor | IGBTs 400V 30A 1.6V Vce Ignition IGBT | на замовлення 700 шт: термін постачання 21-30 дні (днів) |
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RGPR30NS40HRTL | ROHM | Description: ROHM - RGPR30NS40HRTL - IGBT, 30 A, 1.6 V, 125 W, 430 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 430V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (23-Jan-2024) | на замовлення 386 шт: термін постачання 21-31 дні (днів) |
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RGPR30NS40HRTL | ROHM | Description: ROHM - RGPR30NS40HRTL - IGBT, 30 A, 1.6 V, 125 W, 430 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 430V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (23-Jan-2024) | на замовлення 386 шт: термін постачання 21-31 дні (днів) |
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RGPR30NS40HRTL | Rohm Semiconductor | Description: IGBT 430V 30A IGNITION LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: LPDS Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 22 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W Grade: Automotive Qualification: AEC-Q101 | на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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RGPR30NS40HRTL | Rohm Semiconductor | Trans IGBT Chip N-CH 430V 30A 125000mW Automotive 3-Pin(2+Tab) LPDS T/R | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RGPS-9084GP-P-EU | ORing | Ethernet Modules Rack-mount 8 x PoE+ 10/100/1000TX (RJ-45) + 4x 1000 (SFP) with 300watts power supply EU type power cable | товар відсутній | |||||||||||||||||||
RGPS-9084GP-P-JP | ORing | Ethernet Modules Rack-mount 8 x PoE+ 10/100/1000TX (RJ-45) + 4x 1000 (SFP) with 300watts power supply JP type power cable | товар відсутній | |||||||||||||||||||
RGPS-9084GP-P-UK | ORing | Ethernet Modules Rack-mount 8 x PoE+ 10/100/1000TX (RJ-45) + 4x 1000 (SFP) with 300watts power supply UK type power cable | товар відсутній | |||||||||||||||||||
RGPS-9084GP-P-US | ORing | Ethernet Modules Rack-mount 8 x PoE+ 10/100/1000TX (RJ-45) + 4x 1000 (SFP) with 300watts power supply US type power cable | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP | ORing | Ethernet Modules 26-port rackmount PoE switch; 22GE/PSE + 2G Combo PSE + 2 100/1000 SFP socket | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-LP | ORing Networking | Description: RACK-MOUNT 22X POE+ 10/100/1000T | на замовлення 2 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||||
RGPS-92222GCP-NP-LP | ORing | Ethernet Modules 26-port rackmount PoE switch; 22GE/PSE + 2G Combo PSE + 2 100/1000 SFP socket , low watts power supply included | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-LP-EU | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-LP-JP | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-LP-UK | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-LP-US | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-P | ORing Networking | Description: RACK-MOUNT 22X POE+ 10/100/1000T | на замовлення 1 шт: термін постачання 21-31 дні (днів) | |||||||||||||||||||
RGPS-92222GCP-NP-P | ORing | Ethernet Modules 26-port rackmount PoE switch; 22GE/PSE + 2G Combo PSE + 2 100/1000 SFP socket , power supply included | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-P-EU | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-P-JP | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-P-UK | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-92222GCP-NP-P-US | ORing | Ethernet Modules Rack-mount 22x PoE+ 10/100/1000TX (RJ-45) + 2x 1000 (SFP) + 2x Gigabit Combo | товар відсутній | |||||||||||||||||||
RGPS-R9244GP+-LP | ORing | Managed Ethernet Switches Layer3 28-port rackmount managed PoE switch; 24GE/PSE + 4 1G/10G SFP+ socket, low watts power supply included | товар відсутній | |||||||||||||||||||
RGPS-R9244GP+-P | ORing | Managed Ethernet Switches Layer3 28-port rackmount managed PoE switch; 24GE/PSE + 4 1G/10G SFP+ socket, power supply included | товар відсутній | |||||||||||||||||||
RGPS-R9244GP+-P_EU | ORing | Ethernet Modules Rack-mount 24x PoE+ 10/100/1000TX (RJ-45) + 4x 10G (SFP+) with 1000watts power supply | товар відсутній | |||||||||||||||||||
RGPS-R9244GP+-P_JP | ORing | Ethernet Modules Rack-mount 24x PoE+ 10/100/1000TX (RJ-45) + 4x 10G (SFP+) with 1000watts power supply | товар відсутній | |||||||||||||||||||
RGPS-R9244GP+-P_UK | ORing | Ethernet Modules Rack-mount 24x PoE+ 10/100/1000TX (RJ-45) + 4x 10G (SFP+) with 1000watts power supply | товар відсутній | |||||||||||||||||||
RGPS-R9244GP+-P_US | ORing | Ethernet Modules Rack-mount 24x PoE+ 10/100/1000TX (RJ-45) + 4x 10G (SFP+) with 1000watts power supply | товар відсутній | |||||||||||||||||||
RGPSD012 | Semtech Corporation | Description: KIT EVAL FOR RGPSM002 | товар відсутній | |||||||||||||||||||
RGPSD212 | Semtech Corporation | Description: KIT EVAL FOR RGPSM202 | товар відсутній | |||||||||||||||||||
RGPSM002 | Semtech Corporation | Description: MODULE GPS RECEIVER LOW POWER | товар відсутній | |||||||||||||||||||
RGPSM002WA | Semtech Corporation | Description: MODULE GPS RECEIVER LOW POWER | товар відсутній | |||||||||||||||||||
RGPSM202 | Semtech Corporation | Description: RF RCVR GPS 1575.42MHZ MODULE Packaging: Tray Package / Case: Module Sensitivity: -143dBm Mounting Type: Surface Mount Frequency: 1575.42MHz Modulation or Protocol: GPS Data Interface: PCB, Surface Mount Voltage - Supply: 3V ~ 3.65V Applications: Automotive, Laptop, PDA Current - Receiving: 25mA Antenna Connector: PCB, Surface Mount Supplier Device Package: Module Part Status: Obsolete | товар відсутній | |||||||||||||||||||
RGPZ10BM40FHTL | Rohm Semiconductor | Description: IGBT 460V 20A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W Grade: Automotive Qualification: AEC-Q101 | на замовлення 7489 шт: термін постачання 21-31 дні (днів) |
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RGPZ10BM40FHTL | ROHM Semiconductor | IGBTs 430V 20A 1.6V Vce Ignition IGBT | на замовлення 4097 шт: термін постачання 21-30 дні (днів) |
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RGPZ10BM40FHTL | Rohm Semiconductor | Description: IGBT 460V 20A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Supplier Device Package: TO-252 Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Gate Charge: 14 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 460 V Power - Max: 107 W Grade: Automotive Qualification: AEC-Q101 | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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