RGP02-20E-BULK EIC SEMICONDUCTOR INC.


RGP02-12E_RGP02-20E.pdf Виробник: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 2KV 500MA DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
на замовлення 3400 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
500+22.37 грн
Мінімальне замовлення: 500
Відгуки про товар
Написати відгук

Технічний опис RGP02-20E-BULK EIC SEMICONDUCTOR INC.

Description: DIODE GEN PURP 2KV 500MA DO41, Packaging: Bag, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-41, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 2000 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA, Current - Reverse Leakage @ Vr: 5 µA @ 2000 V.