Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11375) > Сторінка 164 з 190
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MSCD36-08 | Microsemi Corporation |
Description: DIODE MODULE GP 800V 36A D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 36A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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CPT30145 | Microsemi Corporation | Description: DIODE MODULE 45V 150A 2TOWER |
товару немає в наявності |
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CPT30145A | Microsemi Corporation | Description: DIODE MODULE 45V TO244AB |
товару немає в наявності |
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CPT30145D | Microsemi Corporation | Description: DIODE MODULE 45V TO244AB |
товару немає в наявності |
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SMAJ5926B | Microsemi Corporation | Description: DIODE ZENER 11V 1.5W DO214AC |
товару немає в наявності |
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SMBG5926BE3/TR13 | Microsemi Corporation | Description: DIODE ZENER 11V 2W SMBG |
товару немає в наявності |
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090-44530-01 | Microsemi Corporation | Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS |
товару немає в наявності |
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APTGT400SK120D3G | Microsemi Corporation | Description: IGBT MODULE 1200V 580A 2100W D3 |
товару немає в наявності |
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AFS600-1PQ208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-1PQ208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-PQ208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-2PQ208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-2PQ208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-PQ208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-1PQG208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-1PQG208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-2PQG208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-PQG208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-2PQG208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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AFS600-PQG208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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M1AFS600-PQ208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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M7AFS600-1PQ208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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M7AFS600-1PQG208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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M1AFS600-2PQG208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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M7AFS600-2PQG208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
товару немає в наявності |
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MXPLAD6.5KP170CAe3 | Microsemi Corporation | Description: TVS DIODE 170VWM 275VC PLAD |
товару немає в наявності |
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JANTX1N4969CUS | Microsemi Corporation |
Description: DIODE ZENER 30V 5W D5B Packaging: Bulk Tolerance: ±2% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: D-5B Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V Grade: Military Qualification: MIL-PRF-19500/435 |
товару немає в наявності |
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JAN2N6251T1 | Microsemi Corporation | Description: TRANS NPN 350V 10A TO254AA |
товару немає в наявності |
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JANTX2N6251T1 | Microsemi Corporation | Description: TRANS NPN 350V 10A TO254AA |
товару немає в наявності |
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JANS2N6251T1 | Microsemi Corporation | Description: TRANS NPN 350V 10A TO254AA |
товару немає в наявності |
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JANTXV2N6251T1 | Microsemi Corporation | Description: TRANS NPN 350V 10A TO254AA |
товару немає в наявності |
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2N6251T1 | Microsemi Corporation | Description: NPN TRANSISTOR |
товару немає в наявності |
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SMCG6061A/TR13 | Microsemi Corporation | Description: TVS DIODE 70VWM 113VC DO215AB |
товару немає в наявності |
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SMCG6062E3/TR13 | Microsemi Corporation | Description: TVS DIODE 73VWM 131VC DO215AB |
товару немає в наявності |
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SMCG6066A/TR13 | Microsemi Corporation | Description: TVS DIODE 110VWM 182VC DO215AB |
товару немає в наявності |
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SMCG6067/TR13 | Microsemi Corporation | Description: TVS DIODE 121VWM 223VC DO215AB |
товару немає в наявності |
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SMCG6065/TR13 | Microsemi Corporation | Description: TVS DIODE 95VWM 176VC DO215AB |
товару немає в наявності |
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SMCG6069/TR13 | Microsemi Corporation | Description: TVS DIODE 145VWM 274VC DO215AB |
товару немає в наявності |
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SMCG6061AE3/TR13 | Microsemi Corporation | Description: TVS DIODE 70VWM 113VC DO215AB |
товару немає в наявності |
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SMCG6063A/TR13 | Microsemi Corporation | Description: TVS DIODE 82VWM 137VC DO215AB |
товару немає в наявності |
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SMCG6067A/TR13 | Microsemi Corporation | Description: TVS DIODE 128VWM 213VC DO215AB |
товару немає в наявності |
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SMCG6064/TR13 | Microsemi Corporation | Description: TVS DIODE 90VWM 158VC DO215AB |
товару немає в наявності |
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SMCG6065A/TR13 | Microsemi Corporation | Description: TVS DIODE 100VWM 168VC DO215AB |
товару немає в наявності |
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SMCG6067AE3/TR13 | Microsemi Corporation | Description: TVS DIODE 128VWM 213VC DO215AB |
товару немає в наявності |
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SMCG6062AE3/TR13 | Microsemi Corporation | Description: TVS DIODE 75VWM 125VC DO215AB |
товару немає в наявності |
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1N4700 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 13V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V |
товару немає в наявності |
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MXP5KE120A | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MAP5KE120A | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MP5KE120A | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MXP5KE120Ae3 | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MP5KE120Ae3 | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MAP5KE120Ae3 | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
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2N7224 | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V |
товару немає в наявності |
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JANTX2N7224 | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
товару немає в наявності |
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JANTXV2N7224 | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
товару немає в наявності |
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JANTXV2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
товару немає в наявності |
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JAN2N7224 | Microsemi Corporation | Description: MOSFET N-CH 100V 34A TO254AA |
товару немає в наявності |
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JANTX2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
товару немає в наявності |
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JAN2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
товару немає в наявності |
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2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V |
товару немає в наявності |
MSCD36-08 |
Виробник: Microsemi Corporation
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MODULE GP 800V 36A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 1578.43 грн |
CPT30145 |
Виробник: Microsemi Corporation
Description: DIODE MODULE 45V 150A 2TOWER
Description: DIODE MODULE 45V 150A 2TOWER
товару немає в наявності
CPT30145A |
Виробник: Microsemi Corporation
Description: DIODE MODULE 45V TO244AB
Description: DIODE MODULE 45V TO244AB
товару немає в наявності
CPT30145D |
Виробник: Microsemi Corporation
Description: DIODE MODULE 45V TO244AB
Description: DIODE MODULE 45V TO244AB
товару немає в наявності
SMAJ5926B |
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 1.5W DO214AC
Description: DIODE ZENER 11V 1.5W DO214AC
товару немає в наявності
SMBG5926BE3/TR13 |
Виробник: Microsemi Corporation
Description: DIODE ZENER 11V 2W SMBG
Description: DIODE ZENER 11V 2W SMBG
товару немає в наявності
090-44530-01 |
Виробник: Microsemi Corporation
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
Description: OSC ATOMIC CLOCK 10.0000MHZ CMOS
товару немає в наявності
APTGT400SK120D3G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 580A 2100W D3
Description: IGBT MODULE 1200V 580A 2100W D3
товару немає в наявності
AFS600-1PQ208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-1PQ208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-PQ208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-2PQ208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-2PQ208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-PQ208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-1PQG208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-1PQG208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-2PQG208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-PQG208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-2PQG208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
AFS600-PQG208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
M1AFS600-PQ208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
M7AFS600-1PQ208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
M7AFS600-1PQG208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
M1AFS600-2PQG208 |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
M7AFS600-2PQG208I |
Виробник: Microsemi Corporation
Description: IC FPGA 95 I/O 208QFP
Description: IC FPGA 95 I/O 208QFP
товару немає в наявності
MXPLAD6.5KP170CAe3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 170VWM 275VC PLAD
Description: TVS DIODE 170VWM 275VC PLAD
товару немає в наявності
JANTX1N4969CUS |
Виробник: Microsemi Corporation
Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Grade: Military
Qualification: MIL-PRF-19500/435
товару немає в наявності
JAN2N6251T1 |
Виробник: Microsemi Corporation
Description: TRANS NPN 350V 10A TO254AA
Description: TRANS NPN 350V 10A TO254AA
товару немає в наявності
JANTX2N6251T1 |
Виробник: Microsemi Corporation
Description: TRANS NPN 350V 10A TO254AA
Description: TRANS NPN 350V 10A TO254AA
товару немає в наявності
JANS2N6251T1 |
Виробник: Microsemi Corporation
Description: TRANS NPN 350V 10A TO254AA
Description: TRANS NPN 350V 10A TO254AA
товару немає в наявності
JANTXV2N6251T1 |
Виробник: Microsemi Corporation
Description: TRANS NPN 350V 10A TO254AA
Description: TRANS NPN 350V 10A TO254AA
товару немає в наявності
SMCG6061A/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO215AB
Description: TVS DIODE 70VWM 113VC DO215AB
товару немає в наявності
SMCG6062E3/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 73VWM 131VC DO215AB
Description: TVS DIODE 73VWM 131VC DO215AB
товару немає в наявності
SMCG6066A/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 110VWM 182VC DO215AB
Description: TVS DIODE 110VWM 182VC DO215AB
товару немає в наявності
SMCG6067/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 121VWM 223VC DO215AB
Description: TVS DIODE 121VWM 223VC DO215AB
товару немає в наявності
SMCG6065/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 95VWM 176VC DO215AB
Description: TVS DIODE 95VWM 176VC DO215AB
товару немає в наявності
SMCG6069/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 145VWM 274VC DO215AB
Description: TVS DIODE 145VWM 274VC DO215AB
товару немає в наявності
SMCG6061AE3/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO215AB
Description: TVS DIODE 70VWM 113VC DO215AB
товару немає в наявності
SMCG6063A/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 82VWM 137VC DO215AB
Description: TVS DIODE 82VWM 137VC DO215AB
товару немає в наявності
SMCG6067A/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 128VWM 213VC DO215AB
Description: TVS DIODE 128VWM 213VC DO215AB
товару немає в наявності
SMCG6064/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 90VWM 158VC DO215AB
Description: TVS DIODE 90VWM 158VC DO215AB
товару немає в наявності
SMCG6065A/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 100VWM 168VC DO215AB
Description: TVS DIODE 100VWM 168VC DO215AB
товару немає в наявності
SMCG6067AE3/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 128VWM 213VC DO215AB
Description: TVS DIODE 128VWM 213VC DO215AB
товару немає в наявності
SMCG6062AE3/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 75VWM 125VC DO215AB
Description: TVS DIODE 75VWM 125VC DO215AB
товару немає в наявності
1N4700 (DO35) |
Виробник: Microsemi Corporation
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
товару немає в наявності
MXP5KE120A |
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MAP5KE120A |
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MP5KE120A |
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MXP5KE120Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MP5KE120Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MAP5KE120Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
2N7224 |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
товару немає в наявності
JANTX2N7224 |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товару немає в наявності
JANTXV2N7224 |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товару немає в наявності
JANTXV2N7224U |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товару немає в наявності
JAN2N7224 |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Description: MOSFET N-CH 100V 34A TO254AA
товару немає в наявності
JANTX2N7224U |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товару немає в наявності
JAN2N7224U |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товару немає в наявності
2N7224U |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
товару немає в наявності