Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11406) > Сторінка 165 з 191
| Фото | Назва | Виробник | Інформація |
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AFS600-PQ208 | Microsemi Corporation |
 Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQ208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQ208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-PQ208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-1PQG208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-1PQG208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQG208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-PQG208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-2PQG208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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AFS600-PQG208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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M1AFS600-PQ208I | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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M7AFS600-1PQ208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
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M7AFS600-1PQG208 | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
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M1AFS600-2PQG208 | Microsemi Corporation |
Description: IC FPGA 95 I/O 208QFP |
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M7AFS600-2PQG208I | Microsemi Corporation | Description: IC FPGA 95 I/O 208QFP |
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| MXPLAD6.5KP170CAe3 | Microsemi Corporation |
Description: TVS DIODE 170VWM 275VC PLAD |
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JANTX1N4969CUS | Microsemi Corporation |
Description: DIODE ZENER 30V 5W D5B Packaging: Bulk Tolerance: ±2% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: D-5B Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V Grade: Military Qualification: MIL-PRF-19500/435 |
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| JAN2N6251T1 | Microsemi Corporation |
Description: TRANS NPN 350V 10A TO254AA |
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| JANTX2N6251T1 | Microsemi Corporation |
Description: TRANS NPN 350V 10A TO254AA |
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| JANS2N6251T1 | Microsemi Corporation |
Description: TRANS NPN 350V 10A TO254AA |
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| JANTXV2N6251T1 | Microsemi Corporation |
Description: TRANS NPN 350V 10A TO254AA |
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| 2N6251T1 | Microsemi Corporation |
Description: NPN TRANSISTOR |
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| SMCG6061A/TR13 | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC DO215AB |
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| SMCG6062E3/TR13 | Microsemi Corporation |
Description: TVS DIODE 73VWM 131VC DO215AB |
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| SMCG6066A/TR13 | Microsemi Corporation |
Description: TVS DIODE 110VWM 182VC DO215AB |
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| SMCG6067/TR13 | Microsemi Corporation |
Description: TVS DIODE 121VWM 223VC DO215AB |
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| SMCG6065/TR13 | Microsemi Corporation |
Description: TVS DIODE 95VWM 176VC DO215AB |
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| SMCG6069/TR13 | Microsemi Corporation |
Description: TVS DIODE 145VWM 274VC DO215AB |
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| SMCG6061AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC DO215AB |
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| SMCG6063A/TR13 | Microsemi Corporation |
Description: TVS DIODE 82VWM 137VC DO215AB |
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| SMCG6067A/TR13 | Microsemi Corporation |
Description: TVS DIODE 128VWM 213VC DO215AB |
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| SMCG6064/TR13 | Microsemi Corporation |
Description: TVS DIODE 90VWM 158VC DO215AB |
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| SMCG6065A/TR13 | Microsemi Corporation |
Description: TVS DIODE 100VWM 168VC DO215AB |
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| SMCG6067AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 128VWM 213VC DO215AB |
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| SMCG6062AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 75VWM 125VC DO215AB |
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1N4700 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 13V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V |
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MXP5KE120A | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE120A | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MP5KE120A | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXP5KE120Ae3 | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MP5KE120Ae3 | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE120Ae3 | Microsemi Corporation |
Description: TVS DIODE 120VWM 193VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| 2N7224 | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V |
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| JANTX2N7224 | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
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| JANTXV2N7224 | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
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| JANTXV2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
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| JAN2N7224 | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO254AA |
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| JANTX2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
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| JAN2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Qualification: MIL-PRF-19500/592 |
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| 2N7224U | Microsemi Corporation |
Description: MOSFET N-CH 100V 34A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V |
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| APTGF25DSK120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 40A 208W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Buck Chopper Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 208 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V |
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| APTGF30X60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 42A 140W SP3 |
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| APTGF25DDA120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 40A 208W SP3 |
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| APTGV75H60T3G | Microsemi Corporation | Description: IGBT MODULE 600V 100A 250W SP3 |
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| APTGT20X60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 32A 62W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
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| APTGT20H60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 32A 62W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
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| APTGV100H60T3G | Microsemi Corporation | Description: IGBT MODULE 600V 150A 340W SP3 |
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| APTGT20DSK60T3G | Microsemi Corporation |
Description: IGBT MODULE 600V 32A 62W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Buck Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 62 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
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| APTGF15X120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 25A 140W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 140 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
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MPLAD6.5KP130CA | Microsemi Corporation |
Description: TVS DIODE 130VWM 209VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31.1A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No |
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| MXPLAD6.5KP170CAe3 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 170VWM 275VC PLAD
Description: TVS DIODE 170VWM 275VC PLAD
товар відсутній
| JANTX1N4969CUS |
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Виробник: Microsemi Corporation
Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Grade: Military
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 30V 5W D5B
Packaging: Bulk
Tolerance: ±2%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Grade: Military
Qualification: MIL-PRF-19500/435
товар відсутній
| JANTX2N6251T1 |
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Виробник: Microsemi Corporation
Description: TRANS NPN 350V 10A TO254AA
Description: TRANS NPN 350V 10A TO254AA
товар відсутній
| JANTXV2N6251T1 |
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Виробник: Microsemi Corporation
Description: TRANS NPN 350V 10A TO254AA
Description: TRANS NPN 350V 10A TO254AA
товар відсутній
| SMCG6061A/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO215AB
Description: TVS DIODE 70VWM 113VC DO215AB
товар відсутній
| SMCG6062E3/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 73VWM 131VC DO215AB
Description: TVS DIODE 73VWM 131VC DO215AB
товар відсутній
| SMCG6066A/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 110VWM 182VC DO215AB
Description: TVS DIODE 110VWM 182VC DO215AB
товар відсутній
| SMCG6067/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 121VWM 223VC DO215AB
Description: TVS DIODE 121VWM 223VC DO215AB
товар відсутній
| SMCG6065/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 95VWM 176VC DO215AB
Description: TVS DIODE 95VWM 176VC DO215AB
товар відсутній
| SMCG6069/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 145VWM 274VC DO215AB
Description: TVS DIODE 145VWM 274VC DO215AB
товар відсутній
| SMCG6061AE3/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO215AB
Description: TVS DIODE 70VWM 113VC DO215AB
товар відсутній
| SMCG6063A/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 82VWM 137VC DO215AB
Description: TVS DIODE 82VWM 137VC DO215AB
товар відсутній
| SMCG6067A/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 128VWM 213VC DO215AB
Description: TVS DIODE 128VWM 213VC DO215AB
товар відсутній
| SMCG6064/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 90VWM 158VC DO215AB
Description: TVS DIODE 90VWM 158VC DO215AB
товар відсутній
| SMCG6065A/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 100VWM 168VC DO215AB
Description: TVS DIODE 100VWM 168VC DO215AB
товар відсутній
| SMCG6067AE3/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 128VWM 213VC DO215AB
Description: TVS DIODE 128VWM 213VC DO215AB
товар відсутній
| SMCG6062AE3/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 75VWM 125VC DO215AB
Description: TVS DIODE 75VWM 125VC DO215AB
товар відсутній
| 1N4700 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
товар відсутній
| MXP5KE120A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MAP5KE120A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MP5KE120A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MXP5KE120Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MP5KE120Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| MAP5KE120Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
| 2N7224 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
товар відсутній
| JANTX2N7224 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товар відсутній
| JANTXV2N7224 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товар відсутній
| JANTXV2N7224U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товар відсутній
| JANTX2N7224U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товар відсутній
| JAN2N7224U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
товар відсутній
| 2N7224U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
товар відсутній
| APTGF25DSK120T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
товар відсутній
| APTGF30X60T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 42A 140W SP3
Description: IGBT MODULE 600V 42A 140W SP3
товар відсутній
| APTGF25DDA120T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 208W SP3
Description: IGBT MODULE 1200V 40A 208W SP3
товар відсутній
| APTGV75H60T3G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP3
Description: IGBT MODULE 600V 100A 250W SP3
товар відсутній
| APTGT20X60T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товар відсутній
| APTGT20H60T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товар відсутній
| APTGV100H60T3G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP3
Description: IGBT MODULE 600V 150A 340W SP3
товар відсутній
| APTGT20DSK60T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товар відсутній
| APTGF15X120T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
товар відсутній
| MPLAD6.5KP130CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31.1A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31.1A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
товар відсутній