Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11375) > Сторінка 163 з 190
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
AGL250V2-FGG144T | Microsemi Corporation | Description: IC FPGA 97 I/O 144FBGA |
товару немає в наявності |
||
APTDC10H601G | Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 600V 10A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Diode Type: Single Phase Technology: Silicon Carbide Schottky Supplier Device Package: SP1 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
товару немає в наявності |
||
APTDC20H601G | Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 600V 20A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: SP1 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V |
товару немає в наявності |
||
1N4099 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 6.8V 400MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.17 V |
товару немає в наявності |
||
JANTX2N3811 | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A TO78 |
товару немає в наявності |
||
JANTXV2N3811U | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A |
товару немає в наявності |
||
JAN2N3811L | Microsemi Corporation |
Description: TRANS 2PNP 60V 0.05A TO78 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/336 |
товару немає в наявності |
||
2N3811L | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A TO-78 |
товару немає в наявності |
||
JANTXV2N3811 | Microsemi Corporation | Description: TRANS 2PNP 60V 0.05A TO78 |
товару немає в наявності |
||
LIB-INCR-F-SOL | Microsemi Corporation | Description: LICENSE IP SOLARIS INCREMENT 1YR |
товару немає в наявності |
||
LIB-SOL-F-1YR | Microsemi Corporation | Description: LICENSE FULL PLATINUM 1YR FLOAT |
товару немає в наявності |
||
LIB-SOL-F-R-1YR | Microsemi Corporation | Description: RENEWAL LIC FULL PLAT 1YR FLOAT |
товару немає в наявності |
||
P6KE11CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 9.4VWM 15.6VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 9.4V Supplier Device Package: Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 10.5V Voltage - Clamping (Max) @ Ipp: 15.6V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
||
APT12F60K | Microsemi Corporation | Description: MOSFET N-CH 600V 12A TO220 |
товару немає в наявності |
||
MSD30-12 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: MSD Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |
||
MSD30-18 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.8KV 30A Packaging: Bulk Package / Case: M1 Mounting Type: QC Terminal Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Part Status: Obsolete Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1800 V |
товару немає в наявності |
||
APTGF50H120TG | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP4 |
товару немає в наявності |
||
APTGF50DU120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
товару немає в наявності |
||
APTGF50DA120T1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP1 |
товару немає в наявності |
||
APTGF50A120TG | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP4 |
товару немає в наявності |
||
APTGF50TDU120PG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
товару немає в наявності |
||
APTGF50DDA120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 70A 312W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
товару немає в наявності |
||
APTGF50TA120PG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP6P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
товару немає в наявності |
||
APTGF50SK120T1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP1 |
товару немає в наявності |
||
APTGF50DA120CT1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 312W SP1 |
товару немає в наявності |
||
MXLPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MAPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MXPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MXPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MAPLAD6.5KP54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MPLAD6.5KP54A | Microsemi Corporation | Description: TVS DIODE 54VWM 87.1VC PLAD |
товару немає в наявності |
||
MPLAD7.5KP54AE3 | Microsemi Corporation | Description: TVS DIODE |
товару немає в наявності |
||
MXLPLAD7.5KP54A | Microsemi Corporation | Description: TVS DIODE |
товару немає в наявності |
||
MAPLAD7.5KP54AE3 | Microsemi Corporation | Description: TVS DIODE |
товару немає в наявності |
||
MPLAD7.5KP54A | Microsemi Corporation | Description: TVS DIODE |
товару немає в наявності |
||
MAPLAD7.5KP54A | Microsemi Corporation | Description: TVS DIODE |
товару немає в наявності |
||
MXLPLAD6.5KP54Ae3 | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 74.8A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MXLPLAD7.5KP54AE3 | Microsemi Corporation |
Description: TVS DIODE Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
||
BR246D-320G3-28V-027L | Microsemi Corporation | Description: RELAY GEN PURPOSE DPDT 10A 28V |
товару немає в наявності |
||
BR246D-320G3-28V-027M | Microsemi Corporation | Description: RELAY GEN PURPOSE DPDT 10A 28V |
товару немає в наявності |
||
BR246-320G3-28V-027 | Microsemi Corporation | Description: RELAY GEN PURPOSE DPDT 10A 28V |
товару немає в наявності |
||
BR230-890A1-48V-027L | Microsemi Corporation | Description: RELAY GEN PURPOSE 4PDT 10A 48V |
товару немає в наявності |
||
BR246-320G3-26V-027M | Microsemi Corporation | Description: RELAY GEN PURPOSE DPDT 10A 26V |
товару немає в наявності |
||
BR246-320G3-28V-027L | Microsemi Corporation | Description: RELAY GEN PURPOSE DPDT 10A 28V |
товару немає в наявності |
||
BR246-320G3-28V-027M | Microsemi Corporation | Description: RELAY GEN PURPOSE DPDT 10A 28V |
товару немає в наявності |
||
MXP5KE5.0CAe3 | Microsemi Corporation |
Description: TVS DIODE 5VWM 9.2VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 54.3A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
||
MP5KE9.0Ae3 | Microsemi Corporation |
Description: TVS DIODE 9VWM 15.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32.5A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MAP5KE130A | Microsemi Corporation |
Description: TVS DIODE 130VWM 209VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.4A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
||
MP5KE7.0Ae3 | Microsemi Corporation | Description: TVS DIODE 7VWM 12VC DO204AL |
товару немає в наявності |
||
MP5KE8.5CA | Microsemi Corporation | Description: TVS DIODE 8.5VWM 14.4VC DO204AL |
товару немає в наявності |
||
MXLP5KE70CA | Microsemi Corporation | Description: TVS DIODE 70VWM 113VC DO204AL |
товару немає в наявності |
||
MXLP5KE8.5A | Microsemi Corporation | Description: TVS DIODE 8.5VWM 14.4VC DO204AL |
товару немає в наявності |
||
MXP5KE6.0CA | Microsemi Corporation | Description: TVS DIODE 6VWM 10.3VC DO204AL |
товару немає в наявності |
||
MXLP5KE20CAe3 | Microsemi Corporation |
Description: TVS DIODE 20VWM 32.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 15.4A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
||
MXLP5KE40CA | Microsemi Corporation | Description: TVS DIODE 40VWM 64.5VC DO204AL |
товару немає в наявності |
||
MXP5KE17CA | Microsemi Corporation | Description: TVS DIODE 17VWM 27.6VC DO204AL |
товару немає в наявності |
||
MXLP5KE48Ae3 | Microsemi Corporation | Description: TVS DIODE 48VWM 77.4VC DO204AL |
товару немає в наявності |
||
MXP5KE58CAe3 | Microsemi Corporation | Description: TVS DIODE 58VWM 93.6VC DO204AL |
товару немає в наявності |
||
MXP5KE6.0A | Microsemi Corporation | Description: TVS DIODE 6VWM 10.3VC DO204AL |
товару немає в наявності |
||
MXP5KE8.5CAe3 | Microsemi Corporation | Description: TVS DIODE 8.5VWM 14.4VC DO204AL |
товару немає в наявності |
AGL250V2-FGG144T |
Виробник: Microsemi Corporation
Description: IC FPGA 97 I/O 144FBGA
Description: IC FPGA 97 I/O 144FBGA
товару немає в наявності
APTDC10H601G |
Виробник: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
товару немає в наявності
APTDC20H601G |
Виробник: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SP1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
товару немає в наявності
1N4099 (DO35) |
Виробник: Microsemi Corporation
Description: DIODE ZENER 6.8V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.17 V
Description: DIODE ZENER 6.8V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.17 V
товару немає в наявності
JANTX2N3811 |
Виробник: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO78
Description: TRANS 2PNP 60V 0.05A TO78
товару немає в наявності
JANTXV2N3811U |
Виробник: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A
Description: TRANS 2PNP 60V 0.05A
товару немає в наявності
JAN2N3811L |
Виробник: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
товару немає в наявності
2N3811L |
Виробник: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO-78
Description: TRANS 2PNP 60V 0.05A TO-78
товару немає в наявності
JANTXV2N3811 |
Виробник: Microsemi Corporation
Description: TRANS 2PNP 60V 0.05A TO78
Description: TRANS 2PNP 60V 0.05A TO78
товару немає в наявності
LIB-INCR-F-SOL |
Виробник: Microsemi Corporation
Description: LICENSE IP SOLARIS INCREMENT 1YR
Description: LICENSE IP SOLARIS INCREMENT 1YR
товару немає в наявності
LIB-SOL-F-1YR |
Виробник: Microsemi Corporation
Description: LICENSE FULL PLATINUM 1YR FLOAT
Description: LICENSE FULL PLATINUM 1YR FLOAT
товару немає в наявності
LIB-SOL-F-R-1YR |
Виробник: Microsemi Corporation
Description: RENEWAL LIC FULL PLAT 1YR FLOAT
Description: RENEWAL LIC FULL PLAT 1YR FLOAT
товару немає в наявності
P6KE11CAE3/TR13 |
Виробник: Microsemi Corporation
Description: TVS DIODE 9.4VWM 15.6VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 9.4VWM 15.6VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
APT12F60K |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 12A TO220
Description: MOSFET N-CH 600V 12A TO220
товару немає в наявності
MSD30-12 |
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MSD
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
товару немає в наявності
MSD30-18 |
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 30A
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
Description: BRIDGE RECT 3PHASE 1.8KV 30A
Packaging: Bulk
Package / Case: M1
Mounting Type: QC Terminal
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1800 V
товару немає в наявності
APTGF50H120TG |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Description: IGBT MODULE 1200V 75A 312W SP4
товару немає в наявності
APTGF50DU120TG |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товару немає в наявності
APTGF50DA120T1G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
товару немає в наявності
APTGF50A120TG |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Description: IGBT MODULE 1200V 75A 312W SP4
товару немає в наявності
APTGF50TDU120PG |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Triple, Dual - Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товару немає в наявності
APTGF50DDA120T3G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 70A 312W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товару немає в наявності
APTGF50TA120PG |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP6P
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP6-P
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
товару немає в наявності
APTGF50SK120T1G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
товару немає в наявності
APTGF50DA120CT1G |
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP1
Description: IGBT MODULE 1200V 75A 312W SP1
товару немає в наявності
MXLPLAD6.5KP54A |
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MAPLAD6.5KP54Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MXPLAD6.5KP54A |
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MXPLAD6.5KP54Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MAPLAD6.5KP54A |
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MPLAD6.5KP54A |
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Description: TVS DIODE 54VWM 87.1VC PLAD
товару немає в наявності
MXLPLAD6.5KP54Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 74.8A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MXLPLAD7.5KP54AE3 |
Виробник: Microsemi Corporation
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
BR246D-320G3-28V-027L |
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товару немає в наявності
BR246D-320G3-28V-027M |
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товару немає в наявності
BR246-320G3-28V-027 |
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товару немає в наявності
BR230-890A1-48V-027L |
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 48V
Description: RELAY GEN PURPOSE 4PDT 10A 48V
товару немає в наявності
BR246-320G3-26V-027M |
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 26V
Description: RELAY GEN PURPOSE DPDT 10A 26V
товару немає в наявності
BR246-320G3-28V-027L |
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товару немає в наявності
BR246-320G3-28V-027M |
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 28V
Description: RELAY GEN PURPOSE DPDT 10A 28V
товару немає в наявності
MXP5KE5.0CAe3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 5VWM 9.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 9.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
MP5KE9.0Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 9VWM 15.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.5A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 9VWM 15.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32.5A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MAP5KE130A |
Виробник: Microsemi Corporation
Description: TVS DIODE 130VWM 209VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 130VWM 209VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
MP5KE7.0Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 7VWM 12VC DO204AL
Description: TVS DIODE 7VWM 12VC DO204AL
товару немає в наявності
MP5KE8.5CA |
Виробник: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
товару немає в наявності
MXLP5KE70CA |
Виробник: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC DO204AL
Description: TVS DIODE 70VWM 113VC DO204AL
товару немає в наявності
MXLP5KE8.5A |
Виробник: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
товару немає в наявності
MXP5KE6.0CA |
Виробник: Microsemi Corporation
Description: TVS DIODE 6VWM 10.3VC DO204AL
Description: TVS DIODE 6VWM 10.3VC DO204AL
товару немає в наявності
MXLP5KE20CAe3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 20VWM 32.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.4A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
MXLP5KE40CA |
Виробник: Microsemi Corporation
Description: TVS DIODE 40VWM 64.5VC DO204AL
Description: TVS DIODE 40VWM 64.5VC DO204AL
товару немає в наявності
MXP5KE17CA |
Виробник: Microsemi Corporation
Description: TVS DIODE 17VWM 27.6VC DO204AL
Description: TVS DIODE 17VWM 27.6VC DO204AL
товару немає в наявності
MXLP5KE48Ae3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Description: TVS DIODE 48VWM 77.4VC DO204AL
товару немає в наявності
MXP5KE58CAe3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AL
Description: TVS DIODE 58VWM 93.6VC DO204AL
товару немає в наявності
MXP5KE6.0A |
Виробник: Microsemi Corporation
Description: TVS DIODE 6VWM 10.3VC DO204AL
Description: TVS DIODE 6VWM 10.3VC DO204AL
товару немає в наявності
MXP5KE8.5CAe3 |
Виробник: Microsemi Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
Description: TVS DIODE 8.5VWM 14.4VC DO204AL
товару немає в наявності