Продукція > MICRON TECHNOLOGY INC. > Всі товари виробника MICRON TECHNOLOGY INC. (10626) > Сторінка 159 з 178
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MT58L64L18PT-7.5 | Micron Technology Inc. |
 Description: IC SRAM 1MBIT PARALLEL 100TQFPPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20.1) Part Status: Active Memory Interface: Parallel Access Time: 4.2 ns Memory Organization: 64K x 18 DigiKey Programmable: Not Verified |
на замовлення 2162 шт: термін постачання 21-31 дні (днів) |
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MT58L256L18P1T-5 | Micron Technology Inc. |
Description: IC SRAM 4MBIT PARALLEL 100TQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20.1) Part Status: Active Memory Interface: Parallel Access Time: 2.8 ns Memory Organization: 256K x 18 DigiKey Programmable: Not Verified |
на замовлення 16233 шт: термін постачання 21-31 дні (днів) |
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| MT58L256L18P1T-7.5 | Micron Technology Inc. |
Description: IC SRAM 4MBIT PARALLEL 100TQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20.1) Part Status: Active Memory Interface: Parallel Access Time: 4 ns Memory Organization: 256K x 18 DigiKey Programmable: Not Verified |
на замовлення 7202 шт: термін постачання 21-31 дні (днів) |
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| MTFC64GASAONS-AIT | Micron Technology Inc. | Description: USSD 512G |
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| MTFC64GASAONS-AAT | Micron Technology Inc. | Description: USSD 512G |
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| MTFC64GASAONS-AAT TR | Micron Technology Inc. | Description: USSD 512G |
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| MTFC32GASAONS-AAT TR | Micron Technology Inc. | Description: USSD 256G |
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| MTFC32GASAONS-AAT | Micron Technology Inc. | Description: USSD 256G |
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| MTFC64GASAONS-IT TR | Micron Technology Inc. | Description: USSD 512G |
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| MTFC128GASAONS-AIT | Micron Technology Inc. | Description: USSD 1T |
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| MTFC256GASAONS-AIT | Micron Technology Inc. |
Description: USSD 2T Packaging: Box Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 2Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 52 MHz Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Active Memory Interface: UFS2.1 Memory Organization: 256G x 8 DigiKey Programmable: Not Verified |
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| MTFC64GASAONS-AIT TR | Micron Technology Inc. | Description: USSD 512G |
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| MTFC32GASAONS-AIT TR | Micron Technology Inc. | Description: USSD 256G |
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| MTFC32GASAONS-AIT | Micron Technology Inc. | Description: USSD 256G |
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| MTFC32GASAONS-IT TR | Micron Technology Inc. | Description: USSD 256G |
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| MTFC128GASAONS-AAT | Micron Technology Inc. | Description: USSD 1T |
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| MTFC256GASAONS-AAT | Micron Technology Inc. |
Description: USSD 2T Packaging: Box Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 2Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 52 MHz Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Active Memory Interface: UFS2.1 Memory Organization: 256G x 8 DigiKey Programmable: Not Verified |
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| MTFC256GASAONS-AIT TR | Micron Technology Inc. | Description: USSD 2T |
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| MTFC128GASAONS-AIT TR | Micron Technology Inc. | Description: USSD 1T |
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| MTFC256GASAONS-IT TR | Micron Technology Inc. | Description: USSD 2T |
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| MTFC128GASAONS-AAT TR | Micron Technology Inc. | Description: USSD 1T |
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| MTFC128GASAONS-IT TR | Micron Technology Inc. | Description: USSD 1T |
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MTFC16GAPALBH-AAT TR | Micron Technology Inc. |
Description: IC FLASH 128GBIT MMC 153TFBGA Packaging: Tape & Reel (TR) Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Active Memory Interface: MMC Memory Organization: 16G x 8 |
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MTFC16GAPALBH-AIT ES TR | Micron Technology Inc. |
Description: IC FLASH 128GBIT MMC 153TFBGA Packaging: Tape & Reel (TR) Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Obsolete Memory Interface: MMC Memory Organization: 16G x 8 |
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MTFC16GAPALBH-AIT ES | Micron Technology Inc. |
Description: IC FLASH 128GBIT MMC 153TFBGA Packaging: Tray Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Obsolete Memory Interface: MMC Memory Organization: 16G x 8 |
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MTFC16GAPALBH-AAT ES | Micron Technology Inc. |
Description: IC FLASH 128GBIT MMC 153TFBGA Packaging: Tray Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Obsolete Memory Interface: MMC Memory Organization: 16G x 8 |
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MTFC16GAPALBH-AAT ES TR | Micron Technology Inc. |
Description: IC FLASH 128GBIT MMC 153TFBGA Packaging: Tape & Reel (TR) Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Obsolete Memory Interface: MMC Memory Organization: 16G x 8 |
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MTFC16GAPALBH-AAT | Micron Technology Inc. |
Description: IC FLASH 128GBIT MMC 153TFBGA Packaging: Tray Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Discontinued at Digi-Key Memory Interface: MMC Memory Organization: 16G x 8 DigiKey Programmable: Not Verified |
на замовлення 891 шт: термін постачання 21-31 дні (днів) |
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MTFC16GAPALBH-AIT | Micron Technology Inc. |
Description: IC FLASH 128GBIT MMC 153TFBGA Packaging: Tray Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 128Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Part Status: Discontinued at Digi-Key Memory Interface: MMC Memory Organization: 16G x 8 |
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MT53D1024M32D4NQ-046 AAT ES :D T | Micron Technology Inc. |
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA Packaging: Tape & Reel (TR) Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.1V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Part Status: Active Memory Organization: 1G x 32 |
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MT53D1024M32D4NQ-046 AIT ES:D TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA Packaging: Tape & Reel (TR) Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.1V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Part Status: Active Memory Organization: 1G x 32 |
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MT53D1024M32D4NQ-046 WT ES:D TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA Packaging: Tape & Reel (TR) Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.1V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Part Status: Active Memory Organization: 1G x 32 |
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MT55L1MY18PT-6 | Micron Technology Inc. |
Description: IC SRAM 18MBIT PARALLEL 100TQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Asynchronous, ZBT Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20.1) Part Status: Active Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1M x 18 |
на замовлення 233 шт: термін постачання 21-31 дні (днів) |
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MT47H32M16NF-25E AAT:H | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 84FBGA Packaging: Bulk Package / Case: 84-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 84-FBGA (8x12.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 400 ps Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1267 шт: термін постачання 21-31 дні (днів) |
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MT47H32M16NF-25E AIT:H | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 84FBGA Packaging: Bulk Package / Case: 84-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 84-FBGA (8x12.5) Part Status: Last Time Buy Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 400 ps Memory Organization: 32M x 16 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT47H32M16NF-25E AIT:H TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 84FBGA Packaging: Tape & Reel (TR) Package / Case: 84-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 84-FBGA (8x12.5) Part Status: Last Time Buy Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 400 ps Memory Organization: 32M x 16 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT47H32M16NF-25E AUT:H | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 84FBGA Packaging: Tray Package / Case: 84-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.7V ~ 1.9V Technology: SDRAM - DDR2 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 84-FBGA (8x12.5) Part Status: Obsolete Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 400 ps Memory Organization: 32M x 16 Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT29F64G08CECCBH1-12Z:C TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT PARALLEL 100VBGA Packaging: Tape & Reel (TR) Package / Case: 100-VBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 83 MHz Memory Format: FLASH Supplier Device Package: 100-VBGA (12x18) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
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MT29F64G08CECCBH1-12:C TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT PARALLEL 100VBGA Packaging: Tape & Reel (TR) Package / Case: 100-VBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 83 MHz Memory Format: FLASH Supplier Device Package: 100-VBGA (12x18) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 8G x 8 |
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MT29F64G08CECCBH1-12ITZ:C TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT PARALLEL 100VBGA Packaging: Tape & Reel (TR) Package / Case: 100-VBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 83 MHz Memory Format: FLASH Supplier Device Package: 100-VBGA (12x18) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
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| MTFDKCC3T2TFC-1AZ15ABYY | Micron Technology Inc. |
Description: 7400 4TB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.6GB/s Speed - Write: 3.5GB/s Part Status: Active |
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| MTFDKCC3T2TFC-1AZ1ZABYY | Micron Technology Inc. |
Description: 7400 4TB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.6GB/s Speed - Write: 3.5GB/s Part Status: Active |
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| MTFDKCB3T2TFC-1AZ1ZABYY | Micron Technology Inc. |
Description: 7400 4TB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.6GB/s Speed - Write: 3.5GB/s Part Status: Active |
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| MTFDKCC3T2TFC-1AZ45ABYY | Micron Technology Inc. |
Description: 7400 4TB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.6GB/s Speed - Write: 3.5GB/s Part Status: Active |
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| MTFDKCB3T2TFS-1BC1ZABYY | Micron Technology Inc. |
Description: SSD 3.2TB 2.5" TLC NVME Packaging: Tray Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.6GB/s Speed - Write: 3.5GB/s Part Status: Active |
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| MTFDKCC3T2TFS-1BC4ZABYY | Micron Technology Inc. |
Description: 7450 3200GB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.8GB/s Speed - Write: 5.3GB/s Part Status: Active |
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| MTFDKCC3T2TFC-1AZ4ZABYY | Micron Technology Inc. |
Description: 7400 4TB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.6GB/s Speed - Write: 3.5GB/s Part Status: Active |
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| MTFDKCC3T2TFS-1BC45ABYY | Micron Technology Inc. |
Description: 7450 3200GB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.8GB/s Speed - Write: 5.3GB/s Part Status: Active |
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| MTFDKCC3T2TFS-1BC15ABYY | Micron Technology Inc. |
Description: 7450 4TB U.3 SSD Packaging: Box Memory Size: 3.2TB Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC) Type: NVMe Operating Temperature: 0°C ~ 70°C Form Factor: 2.5" Speed - Read: 6.8GB/s Speed - Write: 5.3GB/s Part Status: Active |
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MTFDKCC3T2TFS-1BC1ZABYY | Micron Technology Inc. |
Description: IC SSD FLASH NAND SLC Packaging: Bulk Part Status: Active |
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MTSD128ANC8MS-1WT | Micron Technology Inc. |
Description: MICRON INDUSTRIAL MICROSD CARD 1 Packaging: Tray Memory Size: 128GB Speed: Class 10, UHS Class 1 Memory Type: microSD™ Operating Temperature: -25°C ~ 85°C Part Status: Active |
на замовлення 111 шт: термін постачання 21-31 дні (днів) |
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| MT29F8T08EWLKEM5-ITF:K | Micron Technology Inc. |
Description: TLC 8T X8 LBGA Packaging: Box Part Status: Active DigiKey Programmable: Not Verified |
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| MT29F8T08EWLKEM5-ITF:K TR | Micron Technology Inc. |
Description: TLC 8T X8 LBGA Packaging: Tape & Reel (TR) Part Status: Active DigiKey Programmable: Not Verified |
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| MT53E512M16D1Z11MWC1 | Micron Technology Inc. |
Description: LPDDR4 8G DIE 512MX16 Packaging: Box Package / Case: Die Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Memory Format: DRAM Supplier Device Package: Wafer Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 512M x 16 |
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| MT53D512M16D1DS-046 IT:D | Micron Technology Inc. |
Description: LPDDR4 8G 512MX16 FBGA Packaging: Box Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-WFBGA (10x14.5) Part Status: Active Memory Organization: 512M x 16 |
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| MT53D512M16D1DS-046 IT:D TR | Micron Technology Inc. |
Description: LPDDR4 8G 512MX16 FBGA Packaging: Tape & Reel (TR) Package / Case: 200-WFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-WFBGA (10x14.5) Part Status: Active Memory Interface: Parallel Memory Organization: 512M x 16 |
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MT53E512M16D1FW-046 AAT:D | Micron Technology Inc. |
Description: LPDDR4 8G 512MX16 FBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 512M x 16 |
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MT53E512M16D1FW-046 AAT:D TR | Micron Technology Inc. |
Description: LPDDR4 8G 512MX16 FBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 512M x 16 |
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MT53E512M16D1FW-046 AIT:D | Micron Technology Inc. |
Description: LPDDR4 8G 512MX16 FBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 512M x 16 |
товар відсутній |
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MT53E512M16D1FW-046 AIT:D TR | Micron Technology Inc. |
Description: LPDDR4 8G 512MX16 FBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 512M x 16 |
товар відсутній |
| MT58L64L18PT-7.5 |
|
Виробник: Micron Technology Inc.
Description: IC SRAM 1MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 64K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 64K x 18
DigiKey Programmable: Not Verified
на замовлення 2162 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 660.39 грн |
| MT58L256L18P1T-5 |
|
Виробник: Micron Technology Inc.
Description: IC SRAM 4MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 2.8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
на замовлення 16233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 48+ | 478.71 грн |
| MT58L256L18P1T-7.5 |
|
Виробник: Micron Technology Inc.
Description: IC SRAM 4MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
на замовлення 7202 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 47+ | 484.74 грн |
| MTFC256GASAONS-AIT |
|
Виробник: Micron Technology Inc.
Description: USSD 2T
Packaging: Box
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS2.1
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
Description: USSD 2T
Packaging: Box
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS2.1
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
товар відсутній
| MTFC256GASAONS-AAT |
|
Виробник: Micron Technology Inc.
Description: USSD 2T
Packaging: Box
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS2.1
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
Description: USSD 2T
Packaging: Box
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 52 MHz
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Active
Memory Interface: UFS2.1
Memory Organization: 256G x 8
DigiKey Programmable: Not Verified
товар відсутній
| MTFC16GAPALBH-AAT TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Active
Memory Interface: MMC
Memory Organization: 16G x 8
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Active
Memory Interface: MMC
Memory Organization: 16G x 8
товар відсутній
| MTFC16GAPALBH-AIT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
товар відсутній
| MTFC16GAPALBH-AIT ES |
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
товар відсутній
| MTFC16GAPALBH-AAT ES |
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
товар відсутній
| MTFC16GAPALBH-AAT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Obsolete
Memory Interface: MMC
Memory Organization: 16G x 8
товар відсутній
| MTFC16GAPALBH-AAT |
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Discontinued at Digi-Key
Memory Interface: MMC
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Discontinued at Digi-Key
Memory Interface: MMC
Memory Organization: 16G x 8
DigiKey Programmable: Not Verified
на замовлення 891 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1678.87 грн |
| 10+ | 1505.11 грн |
| 25+ | 1488.98 грн |
| 40+ | 1362.89 грн |
| 80+ | 1196.43 грн |
| 230+ | 1156.07 грн |
| 440+ | 1106.52 грн |
| MTFC16GAPALBH-AIT |
Виробник: Micron Technology Inc.
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Discontinued at Digi-Key
Memory Interface: MMC
Memory Organization: 16G x 8
Description: IC FLASH 128GBIT MMC 153TFBGA
Packaging: Tray
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 128Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Part Status: Discontinued at Digi-Key
Memory Interface: MMC
Memory Organization: 16G x 8
товар відсутній
| MT53D1024M32D4NQ-046 AAT ES :D T |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Part Status: Active
Memory Organization: 1G x 32
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Part Status: Active
Memory Organization: 1G x 32
товар відсутній
| MT53D1024M32D4NQ-046 AIT ES:D TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Part Status: Active
Memory Organization: 1G x 32
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Part Status: Active
Memory Organization: 1G x 32
товар відсутній
| MT53D1024M32D4NQ-046 WT ES:D TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Part Status: Active
Memory Organization: 1G x 32
Description: IC DRAM 32GBIT 2.133GHZ 200VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.1V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Part Status: Active
Memory Organization: 1G x 32
товар відсутній
| MT55L1MY18PT-6 |
|
Виробник: Micron Technology Inc.
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous, ZBT
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1M x 18
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Asynchronous, ZBT
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20.1)
Part Status: Active
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 1M x 18
на замовлення 233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 1339.16 грн |
| MT47H32M16NF-25E AAT:H |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Bulk
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Bulk
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1267 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 412.37 грн |
| 10+ | 362.25 грн |
| 25+ | 355.37 грн |
| 50+ | 331.1 грн |
| 100+ | 297.1 грн |
| 250+ | 295.99 грн |
| 500+ | 272.86 грн |
| MT47H32M16NF-25E AIT:H |
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Bulk
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Last Time Buy
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Bulk
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Last Time Buy
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT47H32M16NF-25E AIT:H TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Last Time Buy
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tape & Reel (TR)
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Last Time Buy
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT47H32M16NF-25E AUT:H |
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tray
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 512MBIT PARALLEL 84FBGA
Packaging: Tray
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 84-FBGA (8x12.5)
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 32M x 16
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT29F64G08CECCBH1-12Z:C TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT PARALLEL 100VBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 100-VBGA (12x18)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT PARALLEL 100VBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 100-VBGA (12x18)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товар відсутній
| MT29F64G08CECCBH1-12:C TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT PARALLEL 100VBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 100-VBGA (12x18)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 8G x 8
Description: IC FLASH 64GBIT PARALLEL 100VBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 100-VBGA (12x18)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 8G x 8
товар відсутній
| MT29F64G08CECCBH1-12ITZ:C TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT PARALLEL 100VBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 100-VBGA (12x18)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT PARALLEL 100VBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 83 MHz
Memory Format: FLASH
Supplier Device Package: 100-VBGA (12x18)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товар відсутній
| MTFDKCC3T2TFC-1AZ15ABYY |
Виробник: Micron Technology Inc.
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
товар відсутній
| MTFDKCC3T2TFC-1AZ1ZABYY |
Виробник: Micron Technology Inc.
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
товар відсутній
| MTFDKCB3T2TFC-1AZ1ZABYY |
Виробник: Micron Technology Inc.
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
товар відсутній
| MTFDKCC3T2TFC-1AZ45ABYY |
Виробник: Micron Technology Inc.
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
товар відсутній
| MTFDKCB3T2TFS-1BC1ZABYY |
|
Виробник: Micron Technology Inc.
Description: SSD 3.2TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
Description: SSD 3.2TB 2.5" TLC NVME
Packaging: Tray
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
товар відсутній
| MTFDKCC3T2TFS-1BC4ZABYY |
|
Виробник: Micron Technology Inc.
Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
товар відсутній
| MTFDKCC3T2TFC-1AZ4ZABYY |
Виробник: Micron Technology Inc.
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
Description: 7400 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.6GB/s
Speed - Write: 3.5GB/s
Part Status: Active
товар відсутній
| MTFDKCC3T2TFS-1BC45ABYY |
Виробник: Micron Technology Inc.
Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
Description: 7450 3200GB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
товар відсутній
| MTFDKCC3T2TFS-1BC15ABYY |
|
Виробник: Micron Technology Inc.
Description: 7450 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
Description: 7450 4TB U.3 SSD
Packaging: Box
Memory Size: 3.2TB
Memory Type: Solid State Drive (SSD) FLASH - NAND (TLC)
Type: NVMe
Operating Temperature: 0°C ~ 70°C
Form Factor: 2.5"
Speed - Read: 6.8GB/s
Speed - Write: 5.3GB/s
Part Status: Active
товар відсутній
| MTFDKCC3T2TFS-1BC1ZABYY |
Виробник: Micron Technology Inc.
Description: IC SSD FLASH NAND SLC
Packaging: Bulk
Part Status: Active
Description: IC SSD FLASH NAND SLC
Packaging: Bulk
Part Status: Active
товар відсутній
| MTSD128ANC8MS-1WT |
|
Виробник: Micron Technology Inc.
Description: MICRON INDUSTRIAL MICROSD CARD 1
Packaging: Tray
Memory Size: 128GB
Speed: Class 10, UHS Class 1
Memory Type: microSD™
Operating Temperature: -25°C ~ 85°C
Part Status: Active
Description: MICRON INDUSTRIAL MICROSD CARD 1
Packaging: Tray
Memory Size: 128GB
Speed: Class 10, UHS Class 1
Memory Type: microSD™
Operating Temperature: -25°C ~ 85°C
Part Status: Active
на замовлення 111 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3009.46 грн |
| 10+ | 2687.62 грн |
| 25+ | 2591.65 грн |
| 40+ | 2371.59 грн |
| MT29F8T08EWLKEM5-ITF:K |
Виробник: Micron Technology Inc.
Description: TLC 8T X8 LBGA
Packaging: Box
Part Status: Active
DigiKey Programmable: Not Verified
Description: TLC 8T X8 LBGA
Packaging: Box
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
| MT29F8T08EWLKEM5-ITF:K TR |
Виробник: Micron Technology Inc.
Description: TLC 8T X8 LBGA
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Description: TLC 8T X8 LBGA
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
| MT53E512M16D1Z11MWC1 |
Виробник: Micron Technology Inc.
Description: LPDDR4 8G DIE 512MX16
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Memory Format: DRAM
Supplier Device Package: Wafer
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
Description: LPDDR4 8G DIE 512MX16
Packaging: Box
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Memory Format: DRAM
Supplier Device Package: Wafer
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
товар відсутній
| MT53D512M16D1DS-046 IT:D |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Organization: 512M x 16
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Organization: 512M x 16
товар відсутній
| MT53D512M16D1DS-046 IT:D TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512M x 16
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 512M x 16
товар відсутній
| MT53E512M16D1FW-046 AAT:D |
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
товар відсутній
| MT53E512M16D1FW-046 AAT:D TR |
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
товар відсутній
| MT53E512M16D1FW-046 AIT:D |
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
товар відсутній
| MT53E512M16D1FW-046 AIT:D TR |
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
Description: LPDDR4 8G 512MX16 FBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Part Status: Active
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512M x 16
товар відсутній